| 1. |
- Chen, F., et al.
(författare)
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Reply to "comment on 'Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO3 ' "
- 2018
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Ingår i: Physical Review B. - 2469-9950. ; 97:22
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Tidskriftsartikel (refereegranskat)abstract
- In this reply to S. Durbin's comment on our original paper "Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO3," we concur that his final equations 8 and 9 more accurately describe the change in diffracted intensity as a function of Ti displacement. We also provide an alternative derivation based on an ensemble average over unit cells. The conclusions of the paper are unaffected by this correction.
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| 2. |
- Chen, F., et al.
(författare)
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Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO3
- 2016
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Ingår i: Physical Review B. - 1098-0121. ; 94:18
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Tidskriftsartikel (refereegranskat)abstract
- The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here we apply subpicosecond duration, single-cycle terahertz pulses as an ultrafast electric field bias to prototypical BaTiO3 ferroelectric thin films with the atomic-scale response probed by femtosecond x-ray-scattering techniques. We show that electric fields applied perpendicular to the ferroelectric polarization drive large-amplitude displacements of the titanium atoms along the ferroelectric polarization axis, comparable to that of the built-in displacements associated with the intrinsic polarization and incoherent across unit cells. This effect is associated with a dynamic rotation of the ferroelectric polarization switching on and then off on picosecond time scales. These transient polarization modulations are followed by long-lived vibrational heating effects driven by resonant excitation of the ferroelectric soft mode, as reflected in changes in the c-axis tetragonality. The ultrafast structural characterization described here enables a direct comparison with first-principles-based molecular-dynamics simulations, with good agreement obtained.
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| 3. |
- Austgen, M, et al.
(författare)
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Sputter yield amplification by tungsten doping of Al(2)O(3) employing reactive serial co-sputtering : process characteristics and resulting film properties
- 2011
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Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 44:34, s. 345501-
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Tidskriftsartikel (refereegranskat)abstract
- The deposition rate of reactively sputtered Al(2)O(3) coatings is demonstrated to increase by 80% upon tungsten doping of the used aluminium target. This effect is based on the recoil of the sputtering species at implanted dopants below the target surface and is termed sputter yield amplification. For the investigation of this effect, a novel type of magnetron sputter deposition system is employed that facilitates serial co-sputtering. In this technique doping of the elementary target is enabled by a dynamic sputtering process from an auxiliary cathode. In our case, the rotating aluminium target is dynamically coated with tungsten from this auxiliary cathode. Since the primary target rotates, the auxiliary cathode is placed in series with the primary erosion zone. The deposition rate of Al(2)O(3) can be considerably increased in this process already for very low concentrations of approximately 1% of tungsten in the resulting film. A characterization of the dynamics of reactive sputtering as a function of target rotation speed is performed.
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| 4. |
- Tanikawa, T., et al.
(författare)
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Volt-per-Ångstrom terahertz fields from X-ray free-electron lasers
- 2020
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Ingår i: Journal of Synchrotron Radiation. - 0909-0495 .- 1600-5775. ; 27, s. 796-798
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Tidskriftsartikel (refereegranskat)abstract
- The electron linear accelerators driving modern X-ray free-electron lasers can emit intense, tunable, quasi-monochromatic terahertz (THz) transients with peak electric fields of V Ångstrom(-1) and peak magnetic fields in excess of 10 T when a purpose-built, compact, superconducting THz undulator is implemented. New research avenues such as X-ray movies of THz-driven mode-selective chemistry come into reach by making dual use of the ultra-short GeV electron bunches, possible by a rather minor extension of the infrastructure.
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