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- Lebedev, Alexander, 2000-, et al.
(författare)
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A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
- 2007
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Ingår i: Semiconductors (Woodbury, N.Y.). - 1063-7826 .- 1090-6479. ; 41:3, s. 263-265
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Tidskriftsartikel (refereegranskat)abstract
- 3C-SiC epitaxial layers with a thickness of up to 100 μm were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3-0.5 cm2 and uncompensated donor concentration N d - N a ∼ (10 17-1018) cm-3 were produced at maximum growth rates of up to 200 μm/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv ≈ 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices. © Nauka/Interperiodica 2007.
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- Lebedev, A.A., et al.
(författare)
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Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates
- 2007
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Ingår i: Technical physics letters. - 1063-7850 .- 1090-6533. ; 33:6, s. 524-526
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial 3C-SiC films grown on the (0001)C face of 6H-SiC substrates by sublimation epitaxy in vacuum have been studied. The results of x-ray diffraction measurements show evidence of a rather high structural perfection of silicon carbide epilayers. The Raman spectroscopy data confirm that the 3C-SiC layer grows immediately on the 6H-SiC substrate without any transition layers. It is concluded that the structures under consideration are well suited for the investigation of a two-dimensional electron gas at the 3C-SiC/6C-SiC heterojunction. © Nauka/Interperiodica 2007.
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