| 1. |
- Danielsson, E, et al.
(författare)
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Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors
- 2002
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Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 1337-1340
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Konferensbidrag (refereegranskat)abstract
- Silicon Carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximum current gain of approximately 10 times, and a breakdown voltage of up to 600 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 degreesC, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. Physical device simulations have been used to analyze the measured data. The thermal conductivity is fitted to model the measured self-heating, and the lifetime in the base is fitted against the measurement of the current gain.
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| 2. |
- Koo, SM, et al.
(författare)
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Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors
- 2002
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Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 1235-1238
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Konferensbidrag (refereegranskat)abstract
- Two different structures of junction field-effect transistors in 4H-SiC, with and without trenching effect in the channel region, have been fabricated and characterized. The devices formed with metal mask show a trenching profile (>similar to0.2 mum) after dry etch in the channel groove region and exhibited static induction transistor (SIT)-like characteristics in the sub-threshold region of I-V curves as the channel thickness decreases. The devices without trenching effect have been processed by using a wet-etched oxide mask resulting in a sloped dry-etch profile (theta=similar to30degrees) in the channel, and consequently showed well-saturated drain characteristics for all the channel thicknesses. The conduction mechanisms in these JFETs are examined by the potential profiles from two dimensional numerical simulations.
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| 3. |
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| 4. |
- Lee, SK, et al.
(författare)
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Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide
- 2000
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Ingår i: SOLID-STATE ELECTRONICS. - 0038-1101. ; 44:7, s. 1179-1186
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Tidskriftsartikel (refereegranskat)abstract
- Low resistivity Ohmic contacts of epitaxial titanium carbide to highly doped n- (1.3 x 10(19) cm(-3)) and p- (>10(20) cm(-3)) type epilayer on 4H-SiC were investigated. The titanium carbide contacts were epitaxially grown using coevaporation with an e-bea
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| 5. |
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| 6. |
- Lundberg, N, et al.
(författare)
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CVD-based tungsten carbide Schottky contacts to 6H-SiC for very high-temperature operation
- 2000
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Ingår i: JOURNAL OF ELECTRONIC MATERIALS. - 0361-5235. ; 29:3, s. 372-375
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Tidskriftsartikel (refereegranskat)abstract
- In this study, tungsten carbide, with its hardness, chemical inertness, thermal stability and low resistivity (25 mu Omega cm)(1) is shown as a reliable contact material to n- and p-type 6H-SiC for very high temperature applications. WC films with thickne
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