| 1. |
- Elahipanah, Hossein, et al.
(författare)
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Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High Voltage SiC BJTs and Darlington Transistors
- 2016
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 63:11, s. 4366-4372
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Tidskriftsartikel (refereegranskat)abstract
- A novel lithographic method called intertwined design is demonstrated for high-power SiC devices to improve the area usage and current drive with more uniform current distribution along the device. The higher current drive is achieved by employing the inactive area underneath the base metal contact pads; more uniform current distribution is obtained by the center-base design; whereas the hexagon and square cell geometries result in >15% higher current density at lower on-resistance compared with the conventional finger design. For the first time, we have experimentally presented the intertwined design to marry these advantages and realize a high-efficient SiC power device. Center-base high-voltage 4H–SiC BJTs and Darlington pairs with different square and hexagon cell geometries are fabricated and compared with conventional designs to prove the ability of the intertwined design. The method can widely be used for large-area high-voltage BJTs as well as for integrated devices.
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| 2. |
- Salemi, Arash, et al.
(författare)
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15 kV-Class implantation-Free 4H-SiC BJTs with Record High Current Gain
- 2016
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563.
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Implantation-free mesa-etched ultra-high-voltage 4H-SiC bipolar junction transistors (BJTs) with record current gain of 139 are fabricated, measured and analyzed by device simulation. High current gain is achieved by optimized surface passivation and optimal cell geometries. The area-optimized junction termination extension (O-JTE) is utilized in order to obtain a high and stable breakdown voltage without ion implantation. Different cell geometries (single finger, square, and hexagon cell geometries) are also compared. The base size effect is investigated in order to improve current gain.
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| 3. |
- Salemi, Arash, et al.
(författare)
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A Comprehensive Study on the Geometrical Effects in High Power 4H-SiC BJTs
- 2016
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9383 .- 1557-9646. ; 64:3, s. 882-887
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Tidskriftsartikel (refereegranskat)abstract
- Geometrical effects on the forward characteristics of high-power bipolar junction transistors are studied.An implantation-free area optimized junction termination is implemented in order to have a stable breakdown voltage. The effect of varying the emitter-base geometry, i.e., the emitter width (WE), the base width (WB), emitter contact–emitter edge distance (Wn), and base contact–emitter edge (Wp) on the on-state characteristics is studied in the different emitter cell geometries. The emitter size effect shows the highest influence on the current gain (β). It shows a significant effect on the β (single finger design, about 61%; square cell geometry, about 98%;hexagon cell geometry, about 90%). The base size effect also shows a significant improvement on the β of about 23% at a given WE.
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