| 1. |
- Carstam, Louise, et al.
(author)
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Long-term follow up of patients with WHO grade 2 oligodendroglioma
- 2023
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In: Journal of Neuro-Oncology. - 0167-594X .- 1573-7373. ; 165, s. 65-74
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Journal article (peer-reviewed)abstract
- Purpose Since the introduction of the molecular definition of oligodendrogliomas based on isocitrate dehydrogenase (IDH)-status and the 1p19q-codeletion, it has become increasingly evident how this glioma entity differs much from other diffuse lower grade gliomas and stands out with longer survival and often better responsiveness to adjuvant therapy. Therefore, apart from using a molecular oligodendroglioma definition, an extended follow-up time is necessary to understand the nature of this slow growing, yet malignant condition. The aim of this study was to describe the long-term course of the oligodendroglioma disease in a population-based setting and to determine which factors affect outcome in terms of survival.Methods All adults with WHO-grade 2 oligodendrogliomas with known 1p19q-codeletion from five Scandinavian neurosurgical centers and with a follow-up time exceeding 5 years, were analyzed regarding survival and factors potentially affecting survival.Results 126 patients diagnosed between 1998 and 2016 were identified. The median follow-up was 12.0 years, and the median survival was 17.8 years (95% CI 16.0-19.6).Factors associated with shorter survival in multivariable analysis were age (HR 1.05 per year; CI 1.02-1.08, p < 0.001), tumor diameter (HR 1.05 per millimeter; CI 1.02-1.08, p < 0.001) and poor preoperative functional status (KPS < 80) (HR 4.47; CI 1.70-11.78, p = 0.002). In our material, surgical strategy was not associated with survival.Conclusion Individuals with molecularly defined oligodendrogliomas demonstrate long survival, also in a population-based setting. This is important to consider for optimal timing of therapies that may cause long-term side effects. Advanced age, large tumors and poor function before surgery are predictors of shorter survival.
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| 3. |
- Kang, M. -S, et al.
(author)
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Metal work-function and doping-concentration dependent barrier height of Ni-contacts to 4H-SiC with metal-embedded nano-particles
- 2012
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In: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. - 9783037854198 ; 717-720, s. 857-860
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Journal article (peer-reviewed)abstract
- We investigated the effect of the metal work-function and doping concentration on the barrier height of Ni-contacts with embedded nano-particles (NPs) on 4H-SiC surfaces. Both n-type epitaxial layers with N-D=1x10(16) cm(-3), and layers doped by phosphorus implantation to a doping concentration of similar to 1x10(19) cm(-3) are used. The barrier height is reduced with increasing doping concentration and the silver (Ag) nano-particles (R similar to 18.5 nm) further enhance the local electric field of the electrical contacts to 4H-SiC in comparison to gold (Au) nano-particles (R similar to 20.2 nm). In the case of ion-implanted samples, the barrier height of the fabricated SiC diode structures with embedded Ag-NPs was significantly reduced by similar to 0.09 eV and similar to 0.25 eV compared to the samples with Au-NPs and the sample without NPs, respectively.
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| 5. |
- Koo, S. M., et al.
(author)
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Ferroelectric Pb(Zr,Ti)O-3/Al2O3/4H-SiC diode structures
- 2002
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:5, s. 895-897
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Journal article (peer-reviewed)abstract
- Pb(Zr,Ti)O-3 (PZT) films (450 nm thick) were grown on 4H-silicon carbide (SiC) substrates by a pulsed-laser deposition technique. X-ray diffraction confirms single PZT phase without a preferred orientation. Stable capacitance-voltage (C-V) loops with low conductance (<0.1 mS/cm(2), tan deltasimilar to0.0007 at 400 kHz) and memory window as wide as 10 V were obtained when 5-nm-thick Al2O3 was used as a high band gap (E(g)similar to9 eV) barrier buffer layer between PZT (E(g)similar to3.5 eV) and SiC (E(g)similar to3.2 eV). High-frequency (400 kHz) C-V characteristics revealed clear accumulation, and depletion behavior. Although the charge injection from SiC is the dominant mechanism for C-V hysteresis in PZT/Al2O3/SiC, negligible sweep rate dependence and negligible applied bias dependence were observed compared to that of PZT/SiC. By using room-temperature photoilluminated C-V measurements, the interface states as well as the charge trapping in the PZT/Al2O3 stacks have been calculated.
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| 6. |
- Koo, S. M., et al.
(author)
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Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor
- 2003
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 83:19, s. 3975-3977
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Journal article (peer-reviewed)abstract
- Nonvolatile operation of ferroelectric gate field-effect transistors in silicon carbide (SiC) is demonstrated. Depletion mode transistors have been realized by forming a Pb(Zr0.52Ti0.48)O-3/Al2O3 gate stack on n-type epitaxial channel layer and p-type substrate of 4H-SiC. A memory window, as wide as 5 V, has been observed in the drain current and the ferroelectric gate voltage transfer characteristics. The transistor showed memory effect from room temperature up to 200 degreesC, whereas stable transistor operation was observed up to 300 degreesC. The retention of remnant polarization was preserved after 2x10(4) s at 150 degreesC with no bias on the gate.
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| 7. |
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| 8. |
- Koo, S. M., et al.
(author)
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Processing and properties of ferroelectric Pb(Zr,Ti)O-3/silicon carbide field-effect transistor
- 2003
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In: Integrated Ferroelectrics. - : Informa UK Limited. - 1058-4587 .- 1607-8489. ; 57, s. 1221-1231
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Journal article (peer-reviewed)abstract
- Metal-ferroelectric-(insulator)-semiconductor MF(I)S structures have been fabricated and the properties of pulsed laser-deposited PZT/Al-2 O-3 gate stacks have been studied on n - and p -type 4H-SiC. Among several polytypes of SiC, 4H-SiC is considered as the most attractive one because of its wider bandgap (E-g congruent to 3.2 eV) as well as higher and more isotropic bulk mobility than other polytypes. Single PZT phase without a preferred orientation was confirmed by x-ray diffraction. The interface trap densities N-IT , fixed oxide charges Q(F) , and trapped oxide charges Q HY have been estimated by C-V curves with and without photo-illuminated measurements at room temperature. It is found that the charge injection from SiC is the dominant mechanism for C-V hysteresis. Importantly, with PZT/Al-2 O-3 gate stacks, superior C-V characteristics with negligible sweep rate dependence and negligible time dependence under the applied bias were obtained compared to PZT directly deposited on SiC. The MFIS structures exhibited very stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm(2) , tan delta similar to 0.0007 at 400 kHz) and memory window as wide as 10 V, when 5 nm-thick Al2O3 was used as a high bandgap (E-g similar to 9 eV) barrier buffer layer between PZT (E-g similar to 3.5 eV) and SiC (E-g similar to 3.2 eV). The structures have shown excellent electrical properties promising for the gate stacks as the SiC field-effect transistors (FETs). Depletion mode transistors were prepared by forming a Pb(Zr-0.52 Ti-0.48 )O-3 /Al-2 O-3 gate stack on 4H-SiC. Based on this structure, ferroelectric Pb(Zr,Ti)O-3 (PZT) thin films have been integrated on 4H-silicon carbide (SiC) in a SiC field-effect transistor process. Nonvolatile operation of ferroelectric-gate field-effect transistors in silicon carbide (SiC) is demonstrated.
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| 9. |
- Koo, S. -M, et al.
(author)
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Towards ferroelectric field effect transistors in 4H-silicon carbide
- 2002
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In: Materials Research Society Symposium - Proceedings. - Boston, MA. ; , s. 371-379
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Conference paper (peer-reviewed)abstract
- We report on the integration of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on 4H-silicon carbide and their electrical properties. The structures of metal-ferroelectric-(insulator)-semiconductor MF(I)S and metal-ferroelectric-metal-insulator-semiconductor MFMIS have been fabricated and characterized. The MFMIS structures of Au/PZT/Pt/Ti/SiO2/SiC have shown fully saturated P-E hysteresis loops with remnant polarization Pr = 14.2 ΌC/cm2 and coercive field Ec = 58.9 kV/cm. The MFIS structures exhibited stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm2, tan Ύ ∌ 0.0007 at 12 V, 400 kHz) and memory window as wide as 10 V, when a 5 nm-thick Al2O3 was used as a high bandgap (Eg ∌ 9 eV) barrier buffer layer between PZT (Eg ∌ 3.5 eV) and SiC (Eg ∌ 3.2 eV). Both structures on n- and p- SiC have shown electrical properties promising for the application to the gate stacks for the SiC field-effect transistors (FETs) and the design and process issues on different types of the metal-ferroelectric-silicon carbide field-effect transistors (FETs) have also been proposed.
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