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Träfflista för sökning "WFRF:(Zhang Zhibin) "

Sökning: WFRF:(Zhang Zhibin)

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1.
  • Kristan, Matej, et al. (författare)
  • The Ninth Visual Object Tracking VOT2021 Challenge Results
  • 2021
  • Ingår i: 2021 IEEE/CVF INTERNATIONAL CONFERENCE ON COMPUTER VISION WORKSHOPS (ICCVW 2021). - : IEEE COMPUTER SOC. - 9781665401913 ; , s. 2711-2738
  • Konferensbidrag (refereegranskat)abstract
    • The Visual Object Tracking challenge VOT2021 is the ninth annual tracker benchmarking activity organized by the VOT initiative. Results of 71 trackers are presented; many are state-of-the-art trackers published at major computer vision conferences or in journals in recent years. The VOT2021 challenge was composed of four sub-challenges focusing on different tracking domains: (i) VOT-ST2021 challenge focused on short-term tracking in RGB, (ii) VOT-RT2021 challenge focused on "real-time" short-term tracking in RGB, (iii) VOT-LT2021 focused on long-term tracking, namely coping with target disappearance and reappearance and (iv) VOT-RGBD2021 challenge focused on long-term tracking in RGB and depth imagery. The VOT-ST2021 dataset was refreshed, while VOT-RGBD2021 introduces a training dataset and sequestered dataset for winner identification. The source code for most of the trackers, the datasets, the evaluation kit and the results along with the source code for most trackers are publicly available at the challenge website(1).
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2.
  • Zhao, Jie, et al. (författare)
  • A Sequential Process of Graphene Exfoliation and Site-Selective Copper/Graphene Metallization Enabled by Multifunctional 1-Pyrenebutyric Acid Tetrabutylammonium Salt
  • 2019
  • Ingår i: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 11:6, s. 6448-6455
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper reports a procedure leading to shear exfoliation of pristine few-layer graphene flakes in water and subsequent site-selective formation of Cu/graphene films on polymer substrates, both of which are enabled by employing the water soluble 1-pyrenebutyric acid tetrabutylammonium salt (PyB-TBA). The exfoliation with PyB-TBA as an enhancer leads to as-deposited graphene films dried at 90 °C that are characterized by electrical conductivity of ∼110 S/m. Owing to the good affinity of the tetrabutylammonium cations to the catalyst PdCl42–, electroless copper deposition selectively in the graphene films is initiated, resulting in a self-aligned formation of highly conductive Cu/graphene films at room temperature. The excellent solution-phase and low-temperature processability, self-aligned copper growth, and high electrical conductivity of the Cu/graphene films have permitted fabrication of several electronic circuits on plastic foils, thereby indicating their great potential in compliant, flexible, and printed electronics.
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3.
  • Kristan, Matej, et al. (författare)
  • The Visual Object Tracking VOT2015 challenge results
  • 2015
  • Ingår i: Proceedings 2015 IEEE International Conference on Computer Vision Workshops ICCVW 2015. - : IEEE. - 9780769557205 ; , s. 564-586
  • Konferensbidrag (refereegranskat)abstract
    • The Visual Object Tracking challenge 2015, VOT2015, aims at comparing short-term single-object visual trackers that do not apply pre-learned models of object appearance. Results of 62 trackers are presented. The number of tested trackers makes VOT 2015 the largest benchmark on short-term tracking to date. For each participating tracker, a short description is provided in the appendix. Features of the VOT2015 challenge that go beyond its VOT2014 predecessor are: (i) a new VOT2015 dataset twice as large as in VOT2014 with full annotation of targets by rotated bounding boxes and per-frame attribute, (ii) extensions of the VOT2014 evaluation methodology by introduction of a new performance measure. The dataset, the evaluation kit as well as the results are publicly available at the challenge website(1).
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4.
  • Lanner, Johanna T., et al. (författare)
  • Knockdown of TRPC3 with siRNA coupled to carbon nanotubes results in decreased insulin-mediated glucose uptake in adult skeletal muscle cells
  • 2009
  • Ingår i: The FASEB Journal. - : Wiley. - 0892-6638 .- 1530-6860. ; 23:6, s. 1728-1738
  • Tidskriftsartikel (refereegranskat)abstract
    • The involvement of Ca2+ in the insulin-mediated signaling cascade, resulting in glucose uptake in skeletal muscle, is uncertain. Here, we test the hypothesis that Ca2+ influx through canonical transient receptor potential 3 (TRPC3) channels modulates insulin-mediated glucose uptake in adult skeletal muscle. Experiments were performed on adult skeletal muscle cells of wild-type (WT) and obese, insulin-resistant ob/ob mice. Application of the diacylglycerol analog 1-oleyl-2-acetyl-sn-glycerol (OAG) induced a nonselective cation current, which was inhibited by the addition of anti-TRPC3 antibody in the patch pipette and smaller in ob/ob than in WT cells. Knockdown of TRPC3, using a novel technique based on small interfering RNA (siRNA) coupled to functionalized carbon nanotubes, resulted in pronounced (similar to 70%) decreases in OAG-induced Ca2+ influx and insulin-mediated glucose uptake. TRPC3 and the insulin-sensitive glucose transporter 4 (GLUT4) coimmunoprecipitated, and immunofluorescence staining showed that they were colocalized in the proximity of the transverse tubular system, which is the predominant site of insulin-mediated glucose transport in skeletal muscle. In conclusion, our results indicate that TRPC3 interacts functionally and physically with GLUT4, and Ca2+ influx through TRPC3 modulates insulin-mediated glucose uptake. Thus, TRPC3 is a potential target for treatment of insulin-resistant conditions.-Lanner, J. T., Bruton, J. D., Assefaw-Redda, Y., Andronache, Z., Zhang, S.- J., Severa, D., Zhang, Z.- B., Melzer, W., Zhang, S.-L., Katz, A., Westerblad, H. Knockdown of TRPC3 with siRNA coupled to carbon nanotubes results in decreased insulin-mediated glucose uptake in adult skeletal muscle cells. FASEB J. 23, 1728-1738 (2009)
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5.
  • Li, Jiantong, et al. (författare)
  • Ink-jet printed thin-film transistors with carbon nanotube channels shaped in long strips
  • 2011
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 109:8, s. 084915-
  • Tidskriftsartikel (refereegranskat)abstract
    • The present work reports on the development of a class of sophisticated thin-film transistors (TFTs) based on ink-jet printing of pristine single-walled carbon nanotubes (SWCNTs) for the channel formation. The transistors are manufactured on oxidized silicon wafers and flexible plastic substrates at ambient conditions. For this purpose, ink-jet printing techniques are developed with the aim of high-throughput production of SWCNT thin-film channels shaped in long strips. Stable SWCNT inks with proper fluidic characteristics are formulated by polymer addition. The present work unveils, through Monte Carlo simulations and in light of heterogeneous percolation, the underlying physics of the superiority of long-strip channels for SWCNT TFTs. It further predicts the compatibility of such a channel structure with ink-jet printing, taking into account the minimum dimensions achievable by commercially available printers. The printed devices exhibit improved electrical performance and scalability as compared to previously reported ink-jet printed SWCNT TFTs. The present work demonstrates that ink-jet printed SWCNT TFTs of long-strip channels are promising building blocks for flexible electronics.
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6.
  • Liu, Zhiying, et al. (författare)
  • On Gate Capacitance of Nanotube Networks
  • 2011
  • Ingår i: IEEE Electron Device Letters. - : IEEE. - 0741-3106 .- 1558-0563. ; 32:5, s. 641-643
  • Tidskriftsartikel (refereegranskat)abstract
    • This letter presents a systematic investigation of the gate capacitance C-G of thin-film transistors (TFTs) based on randomly distributed single-walled carbon nanotubes (SWCNTs) in the channel. In order to reduce false counting of SWCNTs that do not contribute to current conduction, C-G is directly measured on the TFTs using a well-established method for MOSFETs. Frequency dispersion of C-G is observed, and it is found to depend on the percolation behavior in SWCNT networks. This dependence can be accounted for using an RC transmission line model. These results are of important implications for the determination of carrier mobility in nanoparticle-based TFTs.
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7.
  • Zhang, Shuai, et al. (författare)
  • Large-Scale and Low-Cost Motivation of Nitrogen-Doped Commercial Activated Carbon for High-Energy-Density Supercapacitor
  • 2019
  • Ingår i: ACS Applied Energy Materials. - : American Chemical Society (ACS). - 2574-0962. ; 2:6, s. 4234-4243
  • Tidskriftsartikel (refereegranskat)abstract
    • The growing requirement for high-performance energy-storage devices has spurred the development of supercapacitors, but the low energy density remains a technical hurdle. In this work, porous nitrogen-doped activated carbon (NAC) is prepared on a large scale from commercial activated carbon (AC) and inexpensive chemicals by a one-step method. The NAC material with 3.1 wt % nitrogen has a high specific surface area of 1186 m(2) g(-1) and shows a specific capacitance of 427 F g(-1) in a symmetric cell with an aqueous electrolyte. 98.2% of the capacity is reserved after 20 000 cycles at 20 A g(-1). The energy densities of the NAC are 17.2 and 87.8 Wh kg(-1) in acidic and organic electrolytes, respectively. Moreover, this simple process is readily scalable to address commercial demand and can be extended to the motivation of a variety of carbon based materials with poor capacitances.
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8.
  • Zhang, Zhibin, et al. (författare)
  • Reversible surface functionalisation of carbon nanotubes for fabrication of field effect transistors
  • 2005
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 87
  • Tidskriftsartikel (refereegranskat)abstract
    • Evidence of the adsorption of sodium dodecyl sulfate (SDS) residuals on single-walled carbon nanotubes (SWNTs) is shown using x-ray photoelectron spectroscopy. The adsorption of SDS on semiconducting SWNTs (s-SWNTs) is believed to result in deposition and alignment of s-SWNTs between predefined electrode pairs using ac dielectrophoresis. However, the presence of SDS on SWNTs degrades electrical properties of the fabricated devices. Attempts at surface cleaning, aimed at removal of the SDS residuals and formation of an improved contact between the SWNTs and the metal, are described.
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9.
  • Ahlberg, Patrik, et al. (författare)
  • Defect formation in graphene during low-energy ion bombardment
  • 2016
  • Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 4:4
  • Tidskriftsartikel (refereegranskat)abstract
    • This letter reports on a systematic investigation of sputter induced damage in graphene caused by low energy Ar+ ion bombardment. The integral numbers of ions per area (dose) as well as their energies are varied in the range of a few eV's up to 200 eV. The defects in the graphene are correlated to the dose/energy and different mechanisms for the defect formation are presented. The energetic bombardment associated with the conventional sputter deposition process is typically in the investigated energy range. However, during sputter deposition on graphene, the energetic particle bombardment potentially disrupts the crystallinity and consequently deteriorates its properties. One purpose with the present study is therefore to demonstrate the limits and possibilities with sputter deposition of thin films on graphene and to identify energy levels necessary to obtain defect free graphene during the sputter deposition process. Another purpose is to disclose the fundamental mechanisms responsible for defect formation in graphene for the studied energy range.
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10.
  • Ahlberg, Patrik, 1985- (författare)
  • Graphene Implementation Study in Semiconductor Processing
  • 2016
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • Graphene, with its two-dimensional nature and unique properties, has for over a decade captured enormous interests in both industry and academia. This work tries to answer the question of what would happen to graphene when it is subjected to various processing conditions and how this would affect the graphene functionality. The focus is placed on its ability to withstand different thin-film deposition environments with regard to the implementation of graphene in two application areas: as a diffusion barrier and in electronic devices.With single-layer graphene films grown in-house by means of chemical vapor deposition (CVD), four techniques among the well-established thin-film deposition methods are studied in detail: atomic layer deposition (ALD), evaporation, sputter-deposition and spray-deposition. And in this order, these methods span a large range of kinetic impact energies from low to high. Graphene is known to have a threshold displacement energy of 22 eV above which carbon atoms are ejected from the lattice. Thus, ALD and evaporation work with energies below this threshold, while sputtering and spraying may involve energies above. The quality of the graphene films undergone the various depositions is mainly evaluated using Raman spectroscopy.Spray deposition of liquid alloy Ga-In-Sn is shown to require a stack of at least 4 layers of graphene in order to act as an effective barrier to the Ga diffusion after the harsh spray-processing. Sputter-deposition is found to benefit from low substrate temperature and high chamber pressure (thereby low kinetic impact energy) so as to avoid damaging the graphene. Reactive sputtering should be avoided. Evaporation is non-invasiveness with low kinetic impact energy and graphene can be subjected to repeated evaporation and removal steps without losing its integrity. With ALD, the effects on graphene are of different nature and they are investigated in the field-effect-transistor (FET) configuration. The ALD process for deposition of Al2O3 films is found to remove undesired dopants from the prior processing and the Al2O3 films are shown to protect the graphene channel from doping by oxygen. When the substrate is turned hydrophobic by chemical treatment prior to graphene transfer-deposition, a unipolar transistor behavior is obtained.
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