| 1. |
- Andersson, Dag, et al.
(författare)
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COSIVU - Compact, smart and reliable drive unit for fully electric vehicles
- 2016
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Ingår i: 2016 Pan Pacific Microelectronics Symposium (Pan Pacific). - : Institute of Electrical and Electronics Engineers Inc.. - 9780988887398
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Konferensbidrag (refereegranskat)abstract
- COSIVU is a three year collaborative research project that ended in September 2015 and which has been funded within the European Green Car Initiative (now the European Green Vehicle Initiative). COSIVU addresses one of the most critical technical parts in fully electrical vehicles (FEV) besides the energy storage system: the mechatronic drive-train unit. The COSIVU project has delivered a new system architecture for multiple wheel drive-trains by a smart, compact and durable single-wheel drive unit with integrated electric motor, full silicon carbide (SiC) power electronics (switches and diodes), a novel control and health monitoring module with wireless communication, and an advanced ultra-compact cooling solution. DfR utilizing FEM simulations ensures first time right solutions. This paper presents the main results including the architecture of the drive train solution as well as the modular design of the inverter based on Inverter Building Blocks, one per phase. Performance tests are presented here for the first time for both the heavy duty commercial vehicle solution performed in a test rig by Volvo, and the tests of the COSIVU solution adapted to a passenger car done by Elaphe.
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| 2. |
- Brinkfeldt, Klas, et al.
(författare)
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Design and Fabrication of a SiC-Based Power Module with Double-Sided Cooling for Automotive Applications
- 2016
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Ingår i: Lecture Notes in Mobility. - Cham : Springer International Publishing. - 2196-5544 .- 2196-5552. ; , s. 157-171, s. 157-172
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- The electrification of drive trains combined with special requirements of the automotive and heavy construction equipment applications drives the development of small, highly integrated and reliable power inverters. To minimize the volume and increase the reliability of the power switching devices a module consisting of SiC devices with double sided cooling capability has been developed. There are several benefits related to cooling the power devices on both sides. The major improvement is the ability to increase the power density, and thereby reduce the number of active switching devices required which in turn reduces costs. Other expected benefits of more efficient cooling are reductions in volume and mass per power ratio. Alternatively, improved reliability margins due to lower temperature swings during operation are can be expected. Removing the wire bonds on the top side of the devices is expected to improve the reliability regardless, since wire bonds are known to be one of the main limitations in power switching devices. In addition, it is possible to design the package with substantially lower inductance, which can allow faster switching of the devices. In this paper the design, simulations and fabrication process of a double sided SiC-based power module are presented.
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| 3. |
- Brinkfeldt, Klas, et al.
(författare)
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Model verification of heat exchangers in a flow test rig
- 2015
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Ingår i: 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015. - : Institute of Electrical and Electronics Engineers Inc.. - 9781479999507 ; , s. 7103135-
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Konferensbidrag (refereegranskat)abstract
- In power electronics, more efficient removal of heat from the junction of power devices leads to a higher power rating per die, which in turn leads to fewer die and reduced system volume. Since temperature is a main driver in expected failure modes an increase in cooling capability can also enhance margins of the device reliability. Previously, CFD simulations of two novel heat exchanger designs that will be used in a power module with double sided cooling have been reported on. The heat exchangers are fabricated by direct 3D manufacturing of copper structures, which allows almost complete freedom in geometric design. Two novel geometries of heat exchanger cooling structures have previously been modeled in terms of thermal performance and expected pressure drop. A flow rig has been designed and calibrated to measure thermal performance and pressure drops of these heat sinks. For calibration purposes, measurements of the thermal response of wave structured and unstructured heat sinks are reported here. The results show that, as expected, the heat sink temperatures are lower for all flow rates in the wavestructured geometry. A thermal CFO model accurately predicts the behavior of the temperature difference between inlet and outlet versus flow rate, but predicts higher absolute temperature values. It was also found that the model underestimates the pressure drop over the tested heat sillies. The pressure drop across a novel pine cone geometry heat sink fabricated by additive manufacturing methods was also measured. Comparisons to a reduced model, which neglects everything before the inlet and after the outlet of the tested device, showed that the behavior of this pine structured heat sink was not predicted correctly. The pressure drop increased more rapidly with flow rates in the model than in the measurements. The main source of error in the measurements and simulations comes from a lack of thermal loading. Future work to improve the flow rig includes possibilities to increase the temperature loading at the bottom of the heat sink under test.
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| 4. |
- Brinkfeldt, Klas, et al.
(författare)
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Modeling of SiC power modules with double sided cooling
- 2014
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Ingår i: 2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014. - : IEEE Computer Society. - 9781479947904
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Konferensbidrag (refereegranskat)abstract
- Silicon Carbide (SiC) based transistor devices have demonstrated higher efficiency switching operation compared to silicon-based, state-of-the-art solutions due to the superior electrical and thermal properties of the SiC material. The improved current density and thermal conductivity allows SiC-based power modules to be smaller than their silicon counterparts for comparable current densities. The active chip area can be reduced further by effectively cooling the devices. In this work, a new power module including SiC bipolar junction transistors (BJT) and diodes and integrated double sided cooling will be introduced. The target application of these modules is a new drive-train system for commercial electric vehicles.
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| 5. |
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| 6. |
- Brinkfeldt, Klas, et al.
(författare)
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Thermal Simulations and Experimental Verification of Power Modules Designed for Double Sided Cooling
- 2016
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Ingår i: Electronic Components and Technology. - : Institute of Electrical and Electronics Engineers Inc.. - 0569-5503. ; , s. 1415-1422
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Tidskriftsartikel (refereegranskat)abstract
- Cooling power modules on both sides of the active switching devices reduces the operational junction temperature compared to conventional single sided cooling. In this work, thermal simulations of power modules based on single sided cooling concepts are compared with double sided cooling counterparts. Expected junction temperatures, maximum temperatures and maximum current capability is analyzed. In addition, experimental verification in the form of comparisons with thermal characterization tests for both single-And double sided power modules based on SiC bipolar junction transistors is presented. Results from simulations show that cooling of both sides of the active switching devices can reduce the thermal resistance by more than 40 percent. This number depends on the heat transfer coefficient. From one example, simulating a worst case stall condition of the electric machine, the use of double sided cooling reduces the maximum junction temperature from 167 °C to 106 °C at a load current of 300 A using a heat transfer coefficient of 4 kW/m2K and 4 kHz switching frequency. Furthermore, the temperature decreases to 97°C if AlN-based DBC substrates are used instead of alumina DBCs. Results from the experimental comparison between double-And single sided cooling showed that the maximum temperature for a load current range of 15 A to 50 A was reduced by 18 percent to 55 percent by using double sided cooling. At a device temperature of 60 °C, the increased thermal capability of the double sided version allowed for a 20 A higher load current, which corresponded to operation under 50 percent higher power losses. Double sided cooling also increased the maximum current capability through a single SiC BJT by more than 20 percent beyond the maximum current capability through the single sided cooling version.
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| 7. |
- Brinkfeldt, Klas, et al.
(författare)
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Thermo-Mechanical Simulations of SiC Power Modules with Single and Double Sided Cooling
- 2015
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Ingår i: 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2015. - : Institute of Electrical and Electronics Engineers Inc.. - 9781479999491 - 9781479999507 ; , s. 1 - 7
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Konferensbidrag (refereegranskat)abstract
- Effectively removing dissipated heat from the switching devices enables a higher current carrying capability per chip area ratio, thus leading to smaller or fewer devices for a given power requirement specification. Further, the use of SiC based devices has proven to increase the efficiency of the system thereby reducing the dissipated heat. Thermal models have been used to compare SiC power modules. Single and double sided cooling have been simulated. The simulated maximum temperatures were 141 °C for the single sided version and 119.7 °C for the double sided version. In addition, the reliability of a single sided module and thermally induced plastic strains of a double sided module have been investigated. A local model of the wire bond interface to the transistor metallization shows a 30/00 maximum increase in plastic strain during the power cycle. Simulations of the creep strain rates in the die attach solder layer for a power cycling loads also shows a 30/00 increase in creep strain per cycle.
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| 8. |
- Otto, Alexander, et al.
(författare)
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Reliability investigation on SiC BJT power module
- 2016
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Ingår i: PCIM Europe 2016. - : Institute of Electrical and Electronics Engineers Inc.. - 9783800741861 ; , s. 1063-1071
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Konferensbidrag (refereegranskat)abstract
- In this paper reliability investigation results for a power module fully based on silicon carbide (SiC) devices are presented. The module comprises four SiC bipolar junction transistors (BJT) and four SiC diodes in half-bridge configuration and is part of a newly developed 3-phase inverter for construction vehicles as well as for passenger car applications. The reliability investigations include electro-thermal and thermo-mechanical finite element simulations as well as power cycling tests with subsequent failure analyses. Furthermore, a double-sided cooling approach for the SiC BJT power module will be described and its thermal performance compared to the single-sided cooling version.
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| 9. |
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| 10. |
- Zhang, Yafan, et al.
(författare)
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Simulation-driven development of a novel SiC embedded power module design concept
- 2017
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Ingår i: 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2017. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781509043446
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Konferensbidrag (refereegranskat)abstract
- Silicon carbide embedded power modules enable a compact and cost competitive packaging solution for high-switching frequency and high-temperature operation applications. Power module packaging technologies span several engineering domains. At the early design stage, simulation-driven development is necessary to shorten the design period and reduce the design cost. This paper presents a novel design concept of a three-phase embedded power module (1200 V, 20 A, 55 mm × 36 mm × 0.808 mm) including silicon carbide metal-oxide-semiconductor field-effect transistor and antiparallel diode dies. Based on the E/CAD design data different layer built-up designs have been tested against thermal, mechanical, and electrical behavior. The obtained simulation data then have been evaluated against a commercial available power module (Motion Smart Power Module SMP33) which utilizes over mold direct bonded copper substrates with soldered semiconductor dies and bond wire contacts. Compared to the conventional module, the loop conductive interconnection parasitic inductance and resistance of the design concept (Vdc+ to Vdc-) reduces approximately by 88 % and 72 %, respectively. The average junction to case thermal resistance has been improved by approximately more than 10 % even though the total package size reduces by approximately 88 %. Furthermore, the contours of deformation and stresses have been investigated for the design concept in the thermomechanical simulation.
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