| 1. |
- Thomas, HS, et al.
(författare)
-
- 2019
-
swepub:Mat__t
|
|
| 2. |
|
|
| 3. |
|
|
| 4. |
|
|
| 5. |
- Gluba, L., et al.
(författare)
-
Band structure evolution and the origin of magnetism in (Ga,Mn) As : From paramagnetic through superparamagnetic to ferromagnetic phase
- 2018
-
Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 97:11
-
Tidskriftsartikel (refereegranskat)abstract
- The high-spectral-resolution optical studies of the energy gap evolution, supplemented with electronic, magnetic, and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs already for a very low Mn content, much lower than that required to support ferromagnetic spin-spin coupling in (Ga,Mn) As. Only for n-type (Ga,Mn) As with the Mn content below about 0.3% the Mn-related extended states are visible as a feature detached from the valence-band edge and partly occupied with electrons. The combined magnetic and low-temperature photoreflectance studies presented here indicate that the paramagnetic <-> ferromagnetic transformation in p-type (Ga,Mn) As takes place without imposing changes of the unitary character of the valence band with the Fermi level located therein. The whole process is rooted in the nanoscale fluctuations of the local (hole) density of states and the formation of a superparamagnetic-like state. The Fermi level in (Ga,Mn) As is coarsened by the carrier concentration of the itinerant valence band holes and further fine-tuned by the many-body interactions.
|
|
| 6. |
- Gluba, L., et al.
(författare)
-
On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E-1 and E-1 + Delta(1) optical transitions
- 2014
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 105:3
-
Tidskriftsartikel (refereegranskat)abstract
- The dilute (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. In this paper, we verify the ellipsometric results and compare them with more precise photoreflectance method, which gives an important insight into the interaction of the Mn-related states with the ones of GaAs valence band. No spectral shifts observed for the E-1 and E-1 + Delta(1) interband transitions in highly doped and annealed (Ga,Mn)As epitaxial layers indicate that the coupling between a detached Mn impurity band and the valence band does not occur. Our findings are supported by the characterizations of the (Ga,Mn)As epitaxial layers with the high resolution transmission electron microscopy and magnetization measurements. (c) 2014 AIP Publishing LLC.
|
|
| 7. |
- Jack, C. R., et al.
(författare)
-
Magnetic resonance imaging in Alzheimer's Disease Neuroimaging Initiative 2
- 2015
-
Ingår i: Alzheimers & Dementia. - : Wiley. - 1552-5260 .- 1552-5279. ; 11:7, s. 740-756
-
Tidskriftsartikel (refereegranskat)abstract
- Introduction: Alzheimer's Disease Neuroimaging Initiative (ADNI) is now in its 10th year. The primary objective of the magnetic resonance imaging (MRI) core of ADNI has been to improve methods for clinical trials in Alzheimer's disease (AD) and related disorders. Methods: We review the contributions of the MRI core from present and past cycles of ADNI (ADNI-1, -Grand Opportunity and -2). We also review plans for the future-ADNI-3. Results: Contributions of the MRI core include creating standardized acquisition protocols and quality control methods; examining the effect of technical features of image acquisition and analysis on outcome metrics; deriving sample size estimates for future trials based on those outcomes; and piloting the potential utility of MR perfusion, diffusion, and functional connectivity measures in multicenter clinical trials. Discussion: Over the past decade the MRI core of ADNI has fulfilled its mandate of improving methods for clinical trials in AD and will continue to do so in the future. (C) 2015 The Authors. Published by Elsevier Inc. on behalf of the Alzheimer's Association.
|
|
| 8. |
|
|
| 9. |
- Yastrubchak, O., et al.
(författare)
-
Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn) As epitaxial layers
- 2014
-
Ingår i: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 115:1
-
Tidskriftsartikel (refereegranskat)abstract
- The effect of outdiffusion of Mn interstitials from (Ga,Mn) As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn) As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn) As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn) As, in agreement with the Zener model for ferromagnetic semiconductors. (C) 2014 AIP Publishing LLC.
|
|
| 10. |
- Yastrubchak, O., et al.
(författare)
-
Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers
- 2014
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 105:7
-
Tidskriftsartikel (refereegranskat)abstract
- Impact of Bi incorporation into (Ga,Mn)As layers on their electronic-and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition. (C) 2014 AIP Publishing LLC.
|
|
