| 1. |
- Bangolla, Hemanth Kumar, et al.
(författare)
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Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy
- 2022
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Ingår i: Nanoscale Advances. - : Royal Society of Chemistry. - 2516-0230. ; 4:22, s. 4886-4894
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Tidskriftsartikel (refereegranskat)abstract
- Photoconduction (PC) properties were investigated for ternary indium aluminium nitride (InxAl1-xN) nanorods (NRs) with different indium compositions (x) from 0.35 to 0.68, as grown by direct-current reactive magnetron sputter epitaxy. Cross-sectional scanning transmission electron microscopy (STEM) reveals single-crystal quality of the vertically aligned InxAl1-xN NRs. Single-rod photodetector devices with good ohmic contacts were fabricated using the focused-ion-beam technique (FIB), where the In-rich In0.68Al0.32N NR exhibits an optimal photocurrent responsivity of 1400 A W-1 and photoconductive gain of 3300. A transition from a positive photoresponse to a negative photoresponse was observed, while increasing the In composition x from 0.35 to 0.57. The negative PC was further enhanced by increasing x to 0.68. A model based on the coexistence and competition of deep electron trap states and recombination centers was proposed to explain the interesting composition-dependent PC in these ternary III-nitride 1D nanostructures.
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| 2. |
- Ben Sedrine, Nebiha, et al.
(författare)
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Bandgap Engineering and Optical Constants of YxAl1-xN Alloys
- 2013
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Ingår i: Japanese Journal of Applied Physics. - : Japan Society of Applied Physics. - 0021-4922 .- 1347-4065. ; 52:8
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Tidskriftsartikel (refereegranskat)abstract
- We study wurtzite Yx Al1-xN (0 andlt;= x andlt;= 0:22) films with (0001) orientation deposited by magnetron sputtering epitaxy on Si(100) substrates and we determine the alloys band gap energies and optical constants. Room temperature spectroscopic ellipsometry (SE) is employed in the energy range from 1 to 6.3 eV, and data modeling based on the standard dielectric function model is used. As a result of the SE data analysis the Yx Al1-xN refractive index and extinction coefficient are determined. The band gap of Yx Al1-xN is found to decrease linearly from 6.2 eV (x=0) down to 4.5 eV (x=0:22). We further observe an increase of the refractive index with increasing Y content; from 1.93 to 2.20 (at 2 eV) for x=0 and 0.22, respectively, reflecting the increase in material density.
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| 3. |
- Ben Sedrine, Nabiha, et al.
(författare)
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Infrared dielectric functions and optical phonons of wurtzite YxAl1-xN (0 less than= x less than= 0.22)
- 2015
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Ingår i: Journal of Physics D. - : IOP PUBLISHING LTD. - 0022-3727 .- 1361-6463. ; 48:41, s. 415102-
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Tidskriftsartikel (refereegranskat)abstract
- YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. We report the infrared dielectric functions and optical phonons of wurtzite (0001) YxAl1-xN epitaxial films with 0 less than= x less than= 0.22. The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E-1(TO) and LO, and the Raman active E-2 phonons are found to exhibit one-mode behavior, which is discussed in the framework of the MREI model. The compositional dependencies of the E-1(TO), E-2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, epsilon(infinity), the static dielectric constant, epsilon(0), and the Born effective charge Z(B) are established and discussed.
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| 4. |
- Höglund, Carina, et al.
(författare)
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Wurtzite-structure Sc1-xAlxN solid solution films grown by reactive magnetron sputter epitaxy : structural characterization and first-principles calculations
- 2010
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Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 107:12, s. 123515-
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Tidskriftsartikel (refereegranskat)abstract
- AlN(0001) was alloyed with ScN with molar fractions up to ~22%, while retaining a singlecrystal wurtzite (w-) structure and with lattice parameters matching calculated values. Material synthesis was realized by magnetron sputter epitaxy of thin films starting from optimal conditions for the formation of w-AlN onto lattice-matched w-AlN seed layers on Al2O3(0001) and MgO(111) substrates. Films with ScN contents between 23% and ~50% exhibit phase separation into nanocrystalline ScN and AlN, while ScN-rich growth conditions yield a transformation to rocksalt-structure Sc1-xAlxN(111) films. The experimental results are analyzed with ion beam analysis, X-ray diffraction, and transmission electron microscopy, together with ab-initio calculations of mixing enthalpies and lattice parameters of solid solutions in wurtzite, rocksalt, and layered hexagonal phases.
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| 5. |
- Kerdsongpanya, Sit, et al.
(författare)
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Anomalously high thermoelectric power factor in epitaxial ScN thin films
- 2011
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 99:23, s. 232113-
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Tidskriftsartikel (refereegranskat)abstract
- Thermoelectric properties of ScN thin films grown by reactive magnetron sputtering on Al2O3(0001) wafers are reported. X-ray diffraction and elastic recoil detection analyses show that the composition of the films is close to stoichiometry with trace amounts (similar to 1 at. % in total) of C, O, and F. We found that the ScN thin-film exhibits a rather low electrical resistivity of similar to 2.94 mu Omega m, while its Seebeck coefficient is approximately similar to-86 mu V/K at 800 K, yielding a power factor of similar to 2.5 x 10(-3) W/mK(2). This value is anomalously high for common transition-metal nitrides.
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| 6. |
- Pecunia, Vincenzo, et al.
(författare)
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Roadmap on energy harvesting materials
- 2023
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Ingår i: Journal of Physics. - : IOP Publishing. - 2515-7639. ; 6:4
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Tidskriftsartikel (refereegranskat)abstract
- Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.
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| 7. |
- Tholander, Christopher, et al.
(författare)
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Ab initio calculations and experimental study of piezoelectric YxIn1-xN thin films deposited using reactive magnetron sputter epitaxy
- 2016
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Ingår i: Acta Materialia. - : Elsevier. - 1359-6454 .- 1873-2453. ; 105, s. 199-206
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Tidskriftsartikel (refereegranskat)abstract
- By combining theoretical prediction and experimental verification we investigate the piezoelectric properties of yttrium indium nitride (YxIn1-xN). Ab initio calculations show that the YxIn1-xN wurtzite phase is lowest in energy among relevant alloy structures for 0≤x≤0.5. Reactive magnetron sputter epitaxy was used to prepare thin films with Y content up to x=0.51. The composition dependence of the lattice parameters observed in the grown films is in agreement with that predicted by the theoretical calculations confirming the possibility to synthesize a wurtzite solid solution. An AlN buffer layer greatly improves the crystalline quality and surface morphology of subsequently grown YxIn1-xN films. The piezoelectric response in films with x=0.09 and x=0.14 is observed using piezoresponse force microscopy. Theoretical calculations of the piezoelectric properties predict YxIn1−xN to have comparable piezoelectric properties to ScxAl1-xN.
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| 8. |
- Tran, Dat, et al.
(författare)
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Thermal conductivity of ScxAl1-xN and YxAl1-xN alloys
- 2023
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 122:18
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Tidskriftsartikel (refereegranskat)abstract
- Owing to their very large piezoelectric coefficients and spontaneous polarizations, (Sc,Y) xAl(1-x)N alloys have emerged as a new class of III-nitride semiconductor materials with great potential for high-frequency electronic and acoustic devices. The thermal conductivity of constituent materials is a key parameter for design, optimization, and thermal management of such devices. In this study, transient thermoreflectance technique is applied to measure the thermal conductivity of ScxAl1-xN and YxAl1-xN (0 = x = 0.22) layers grown by magnetron sputter epitaxy in the temperature range of 100-400 K. The room-temperature thermal conductivity of both alloys is found to decrease significantly with increasing Sc(Y) composition compared to that of AlN. We also found that the thermal conductivity of YxAl1-xN is lower than that of ScxAl1-xN for all studied compositions. In both alloys, the thermal conductivity increases with the temperature up to 250 K and then saturates. The experimental data are analyzed using a model based on the solution of the phonon Boltzmann transport equation within the relaxation time approximation. The contributions of different phonon-scattering mechanisms to the lattice thermal conductivity of (Sc,Y) xAl(1-x)N alloys are identified and discussed.
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| 9. |
- Wingqvist, Gunilla, et al.
(författare)
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Increased electromechanical coupling in w-ScxAl1-xN
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:11, s. 112902-
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Tidskriftsartikel (refereegranskat)abstract
- AlN is challenged as the material choice in important thin film electroacoustic devices for modern wireless communication applications. We present the promise of superior electromechanical coupling (kt2), in w−ScxAl1−xN by studying its dielectric properties. w−ScxAl1−xN (0≤x≤0.3) thin films grown by dual reactive magnetron sputtering exhibited low dielectric losses along with minor increased dielectric constant (ε). Ellipsometry measurements of the high frequency ε showed good agreement with density function perturbation calculations. Our data show that kt2 will improve from 7% to 10% by alloying AlN with up to 20 mol % ScN.
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| 10. |
- Žukauskaitė, Agnė, 1983-
(författare)
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Metastable ScAlN and YAlN Thin Films Grown by Reactive Magnetron Sputter Epitaxy
- 2014
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Metastable ScxAl1-xN and YxAl1-xN thin films were deposited in an ultra high vacuum system using reactive magnetron sputter epitaxy from elemental Al, Sc, and Y targets in Ar/N2 gas mixture. Their structural, electrical, optical, mechanical, and piezoelectrical properties were investigated by using the transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, I-V and C-V measurements, nanoindentation, and two different techniques for piezoelectric characterization: piezoresponse force microscopy and double beam interferometry.Compared to AlN, improved electromechanical coupling and increase in piezoelectric response was found in ScxAl1-xN/TiN/Al2O3 structures with Sc content up to x=0.2. Decreasing the growth temperature down to 400 °C improved the microstructure and crystalline quality of the material. Microstructure of the films had a stronger influence on piezoelectric properties than the crystalline quality, which affected the leakage currents. When x was increased from x=0 to x=0.3, the hardness and reduced Young’s modulus Er showed a decrease from 17 GPa to 11 GPa, and 265 GPa down to 224 GPa, respectively. In ScxAl1-xN/InyAl1-yN superlattices, ScxAl1-xN layers negative lattice mismatched to In-rich InyAl1-yN were found to be stable at higher Sc concentration (x=0.4) than lattice-matched or positive lattice mismatched layers, confirmed by first principle (ab initio) calculations using density-functional formalism.Al-rich YxAl1-xN thin films were synthesized and reported for the first time. Formation of solid solution was observed up to x=0.22 and an increase in growth temperature up to 900°C improved the crystalline quality of the YxAl1-xN films. The band gap of YxAl1-xN decreased from 6.2 eV for AlN down to 4.5 eV (x=0.22) and was shown to follow Vegard’s rule. Refractive indices and extinction coefficients were also determined. Lattice constants of wurtzite YxAl1-xN measured experimentally are in good agreement with theoretical predictions obtained through ab initio calculations. The mixing enthalpy
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