2. |
- Hussain, Muhammad Waqar, 1985-, et al.
(författare)
-
A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
- 2019
-
Ingår i: IEEE Journal of the Electron Devices Society. - : Institute of Electrical and Electronics Engineers (IEEE). - 2168-6734. ; 7:1, s. 191-195
-
Tidskriftsartikel (refereegranskat)abstract
- This brief presents a 59.5 MHz negative resistanceoscillator for high-temperature operation. The oscillator employs an in-house 4H-SiC BJT, integrated with the requiredcircuit passives on a low-temperature co-fired ceramic substrate. Measurements show that the oscillator operates from room-temperature up to 400 C. The oscillator delivers an output◦power of 11.2 dBm into a 50 Ω load at 25 C, which decreases to 8.4 dBm at 400 C. The oscillation frequency varies by 3.3% in the entire temperature range. The oscillator is biased witha collector current of 35 mA from a 12 V supply and has amaximum DC power consumption of 431 mW.
|
|