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Sökning: WFRF:(van Wees M T)

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  • Ferrari, A. C., et al. (författare)
  • Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
  • 2015
  • Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 7:11, s. 4598-4810
  • Tidskriftsartikel (refereegranskat)abstract
    • We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.
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  • Dash, Saroj Prasad, 1975, et al. (författare)
  • Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature
  • 2014
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 104:21
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO3. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO3 which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics.
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  • Resultat 1-7 av 7

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