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1.	Rönnow, Daniel, et al. (författare) Surface roughness of oxidised copper films studied by atomic force microscopy and spectroscopic light scattering 1998 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 325:1-2, s. 92-98 Tidskriftsartikel (refereegranskat)abstract The interface roughness of Cu2O films produced by thermal oxidation of Cu was studied by spectroscopic elastic light scattering and atomic force microscopy. No correlation could be found between the roughness of the two interfaces, although the amplitude and the length scale of the roughness changed in the same way with film thickness for both interfaces. Both interfaces were found to have a fractal dimension of two. A first order perturbation theory was used to analyse the light scattering data; theory and experiment are in good agreement within the limits of the theory.
2.	Abom, A.E., et al. (författare) Influence of gate metal film growth parameters on the properties of gas sensitive field-effect devices 2002 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 409:2, s. 233-242 Tidskriftsartikel (refereegranskat)abstract Thin films of Pt have been grown as gate metals on the oxide surface of gas sensitive field-effect devices. Both electron beam evaporation and dc magnetron sputtering has been used. The energy of the impinging Pt atoms, the substrate temperature and the thickness of the Pt film were used as parameters in this study. The influence of the growth parameters on the gas response has been investigated and compared with the properties of the films, studied by transmission electron microscopy, Auger electron spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction. The conditions during growth of the Pt film are found to have a large impact on the properties of the device. As expected, crystallinity, morphology and the metal/substrate interfacial structure are also affected by processing parameters. Three different growth processes stand out as the most promising from gas sensor considerations, namely room temperature evaporation, sputtering at high pressures and sputtering at high temperatures. The correlation between gas responses and properties of the gas sensitive layer is discussed. © 2002 Elsevier Science B.V. All rights reserved.
3.	Almer, J, et al. (författare) Microstructure, stress and mechanical properties of arc-evaporated Cr-C-N coatings 2001 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 385:1-2, s. 190-197 Tidskriftsartikel (refereegranskat)abstract The relationships between coating microstructure and properties in the Cr-C-N system have been investigated as a function of composition and post-deposition annealing. Coatings of varying compositions were grown using arc-evaporation, by varying the reactive gas flow ratio fR = f(C2H4)/f(N2) from 0 to 0.2, and were found to consist primarily of the cubic d-Cr(C,N) phase. Changes in both the unstressed lattice parameter, ao, and X-ray diffraction background intensity indicate that both the carbon concentration within the d-phase and amorphous/crystalline content increases with fR. Increasing fR also decreases the magnitude of the compressive biaxial residual stress, from approximately 6 to 1 GPa, while increasing both the inhomogeneous stress and thermal stability. The elastic modulus and hardness of as-deposited coatings were determined from nanoindentation to be 320 and 23 GPa, respectively, for moderate carbon concentrations (fR=0.05). Concurrent variations in microstructure and hardness with post-deposition annealing indicate that the as-deposited hardness is significantly enhanced by the microstructure, primarily by lattice defects and related stresses (microstresses) rather than average stresses (macrostresses).
4.	Almqvist, Nils, et al. (författare) Roughness determination of plasma-modified surface layers with atomic force microscopy 1995 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 270:1-2, s. 426-430 Tidskriftsartikel (refereegranskat)abstract Graphite surfaces exposed to the deuterium plasma in the TEXTOR tokamak were characterized in detail by means of scanning probe microscopy, ion beam analysis and colorimetry methods. The aim is to study the composition and structure of thin layer deposits formed on surfaces subjected to the tokamak plasma. The surface roughness was measured and parametrized in terms of fractal dimension and scaling constant. Several different methods for the fractal analysis of plasma-exposed surfaces have been critically evaluated. The main emphasis of this paper is on the correlation between surface roughness (fractal parameters), the amount of deposited atoms and the layer thickness.
5.	Andersson, Kent, et al. (författare) High stability titanium nitride based solar control films 1992 Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 214:2, s. 213-218 Tidskriftsartikel (refereegranskat)abstract Triple-layer structures of TiO2TiN/TiO2 and quadruple layer structures of TiO2Al/TiN/TiO2 have been sputtered on glass substrates at temperatures ranging from room temperature to 300°C. The reflectance and transmittance were measured in the visible and the near-IR wavelength regions. The thin layer of aluminium, in the quadruple layer, oxidizes and forms a dense diffusion barrier. The multilayers exhibit improved optical selectivity which also improves with substrate temperature up to 300°C.
6.	Arias, A.C., et al. (författare) Use of tin oxide thin films as a transparent electrode in PPV based light-emitting diodes 2000 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 371:1, s. 201-206 Tidskriftsartikel (refereegranskat)abstract Tin oxide (TO) thin films, nominally undoped, have been used as electrodes in poly(p-phenylene vinylene) (PPV) based organic electroluminescent devices. The evolution of the crystallinity and the electrical resistance of TO films submitted to the PPV thermal conversion conditions, have been investigated. It has been found that the electrical resistance is decreased whereas the crystallinity of the film is increased. It is shown in this work, that the photoluminescence of PPV converted on top of TO substrates is not as quenched as it is when converted on top of indium-tin oxide (ITO) substrates. The quantum efficiency of light-emitting diode is 0.07% at 17 V forward bias. It is also shown that the work function of TO films is very stable to different cleaning procedures, in contrast with previous results obtained for ITO films.
7.	Arwin, Hans (författare) Ellipsometry on thin organic layers of biological interest : Characterization and applications 2000 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 377-378, s. 48-56 Tidskriftsartikel (refereegranskat)abstract The thickness resolution and in situ advantage of ellipsometry make this optical technique particularly suitable for studies of thin organic layers of biological interest. Early ellipsometric studies in this area mainly provided thickness quantification, often expressed in terms of surface mass. However, today it is possible to perform monolayer spectroscopy, e.g. of a protein layer at a solid/liquid interface, and also to resolve details in the kinetics of layer formation. Furthermore, complicated microstructures, like porous silicon layers, can be modeled and protein adsorption can be monitored in such layers providing information about pore filling and penetration depths of protein molecules of different size and type. Quantification of adsorption and microstructural parameters of thin organic layers on planar surfaces and in porous layers is of high interest, especially in areas like biomaterials and surface-based biointeraction. Furthermore, by combining ellipsometric readout and biospecificity, possibilities to develop biosensor concepts are emerging. In this report we review the use of ellipsometry in various forms for studies of organic layers with special emphasis on biologically-related issues including in situ monitoring of protein adsorption on planar surfaces and in porous layers, protein monolayer spectroscopy and ellipsometric imaging for determination of thickness distributions. Included is also a discussion about recent developments of biosensor systems and possibilities for in situ monitoring of engineering of multilayer systems based on macromolecules.
8.	Bantikassegn, W., et al. (författare) Absence of Schottky barrier formation in junctions of Al and polypyrrole-polyelectrolyte polymer complexes 1993 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 224:2, s. 232-236 Tidskriftsartikel (refereegranskat)abstract Thin films of conducting polypyrrole doped with large polymeric anions of polystyrene-sulphonate are electrochemically prepared to study the metal/polymer junctions. Aluminium and gold contacts are vacuum deposited to form metal/polymer/gold sandwich structures for current-voltage characterization. Photoelectron spectroscopy, using UV and X-ray photons, is carried out to investigate the possible causes of current limitation in the Al/PPy(PSS) junction.
9.	Baudin, M., et al. (författare) Molecular dynamics simulations of an Al2O3(0001 +/-, 0-10(II))/CeO2 (011 +/-,01-1(II)) interface system 2001 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 401:02-jan, s. 159-164 Tidskriftsartikel (refereegranskat)abstract Constant stress, constant temperature (10 K, 300 K) molecular dynamics simulations were carried out with shell-model potentials for an infinite composite ceria-alumina slab with two free surfaces [alpha -Al2O3 (0001) and CeO2(011) and their opposite counterparts]. The interface introduces considerable structural and dynamical changes, both at the slab surfaces and in the center of the slab. Structurally, both oxide surfaces become effectively oxygen-terminated and the surface structures become disordered close to the interface. Dynamically, in the region near the 'alumina surface/ceria surface/alumina-ceria interface' 3-phase junction the ionic motion is considerably enhanced. Thus, in the interface region, the ionic mean-square displacements increase 2-3 times compared to the pure slabs. Moreover, the ions at the interface participate in a new kind of motion, not present in the pure oxide slabs: large occasional, but frequently reoccurring, back-and-forth ionic motions take place with square-amplitudes as large as similar to0.70 Angstrom (2).
10.	Cardona, M., et al. (författare) Ellipsometric investigations of piezo-optical effects 1998 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 313-314, s. 10-17 Tidskriftsartikel (refereegranskat)abstract An introduction to the stress-induced birefringence of solids, with emphasis on cubic and amorphous materials, is given. Most available experimental data have been obtained in the frequency region below the electronic absorption edge: the corresponding coefficients of the stress-optical tensor are then real. Above the edge (and also in the IR region of the Reststrahlen) they become complex. Ellipsometry is an excellent tool for the investigation of complex stress-optical functions. It also yields the hydrostatic pressure induced changes in the dielectric functions. Data obtained recently for diamond and zincblende-type crystals and their theoretical interpretation are discussed.
11.	Carlberg, M H, et al. (författare) Defects and energy accommodation in epitaxial sputter deposited Mo/W superlattices studied by molecular dynamics 1998 Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 317:1-2, s. 10-13 Tidskriftsartikel (refereegranskat)abstract We report here the results of a Molecular Dynamics-Embedded Atom Method-investigation of the pathways generating point defects in Mo/W superlattices during bombardment with energetic (50 to 200 eV) Ar and Kr neutrals. Energy accommodation coefficients are computed for the different structures and are found to be roughly independent of the incident energy, and substantially higher for structures with Mo on top. Several different types of defects are shown, and two general processes generating those are discussed. Trapping of the incoming noble gas was observed for the case of Kr impinging on structures with Mo as the top monolayer; this is interpreted as an effect of the small mass difference between the Mo and the Kr atoms. An increase in atomic mass of the gas translates into a more disparate behaviour of the studied structures. The energy exchange with the surface layer dictates the behaviour of the superlattice; this is accentuated when bombarding with the heavier gas, Kr. (C) 1998 Elsevier Science S.A.
12.	Chen, Weimin (författare) Applications of optically detected magnetic resonance in semiconductor layered structures 2000 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 364:1, s. 45-52 Tidskriftsartikel (refereegranskat)abstract A short introduction is given on the physics, method, capabilities and limitations of the optically detected magnetic resonance (ODMR) technique. The advantages of the optical detection method in terms of sensitivity and of its direct probe in recombination processes, as compared with the traditional spin resonance technique, will be demonstrated. The importance of these advantages for the ODMR applications in semiconductor layered and quantum structures will be emphasized. The ability of the ODMR technique to provide important information on physical properties of semiconductor layered structures will be highlighted. These include chemical identification, electronic and geometric structure of both radiative and non-radiative defects, carrier recombination mechanism, electronic excitation, etc. Representative cases from CVD-SiC and MBE-Si/SiGe based layered structures will be discussed as examples. The most recent progress, on-going efforts and prospects in achieving unprecedentedly high spectral, time and spatial resolution of the ODMR technique will also be outlined.
13.	Chirita, Valeriu, et al. (författare) Cluster diffusion and surface morphological transitions on Pt (111) via reptation and concerted motion 2000 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 370:1, s. 179-185 Tidskriftsartikel (refereegranskat)abstract Embedded-atom molecular dynamics simulations were used to follow the diffusion dynamics of compact Pt clusters with up to 19 atoms on Pt (111) surfaces. The results reveal a novel cluster diffusion mechanism, involving successive shear translations of adjacent subcluster regions, which give rise to reptation, a snake-like gliding motion. We show that for compact clusters with 4 to 6 atoms, this mechanism competes energetically with that of island diffusion through concerted motion. However, as the cluster size increases from > 7 to ? 20 atoms, reptation becomes the energetically favored diffusion mechanism. The concerted shear motion of subcluster regions, leading to reptation, is also shown to play a significant role in dendritic-to-compact morphological transitions of Pt island.
14.	Cobet, C., et al. (författare) Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV 2000 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 364:1, s. 111-113 Tidskriftsartikel (refereegranskat)abstract In this work we present the dielectric function of hexagonal 4H- and 6H-SiC polytypes as well as the cubic 3C-SiC polytype in the energy range from 3.5 to 10 eV measured by spectroscopic ellipsometry. We operated with synchrotron radiation at the Berlin electron storage ring BESSY I. Additionally the samples were investigated by atomic force microscopy to correct the measured dielectric function for the influence of surface roughness. The experimental results are compared to theoretical calculations.
15.	Crossley, A, et al. (författare) Surface treatment for galling protection of titanium alloys : characterization by surface-specific electron and Raman spectroscopies 2002 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 414:2, s. 224-230 Tidskriftsartikel (refereegranskat)
16.	Dannetun, Per, et al. (författare) High-resolution electron energy loss spectroscopy of thin crystalline highly oriented films of poly(tetrafluoroethylene) 1996 Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 286:1-2, s. 321-329 Tidskriftsartikel (refereegranskat)abstract High-resolution electron energy loss spectroscopy (HREELS) spectra of highly oriented films of poly(tetrafluoroethylene) (PTFE) are reported. With one exception, all peaks in the spectra correspond to IR active vibrations. They are well resolved, and with a remarkably high intensity, more than two orders of magnitude greater than we have observed on any other polymer in HREELS. The angular distributions of the elastic peak, and of the vibrational peaks are very narrow, which indicates both a well ordered system and a dipolar scattering behaviour. No evidence of amorphous regions in these films is found. A Raman active mode can be observed in off-specular geometry, using an incident electron beam coplanar with the PTFE fibers direction. This corresponds to resonance excitation of a transient negative ion state, with a maximum cross-section at an incident electron kinetic energy of about 4 eV.
17.	Dilawar, Nita, et al. (författare) Adhesion enhancement of diamond coatings on WC tools by high energy ion irradiation 1998 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 323:1-2, s. 163-169 Tidskriftsartikel (refereegranskat)abstract Microcrystalline diamond thin films were deposited on cemented tungsten carbide cutting tools by hot-filament chemical vapour deposition process. The coatings deposited were irradiated with 50 MeV Si7+ ions upto a dose of <1013 ions cm-2. The adhesion and wear characteristics of as-deposited and irradiated coatings were studied and it was found that irradiation induced increased adhesion of the coatings to the substrate resulting in reduced coating failure during wear tests.
18.	Donchev, V., et al. (författare) Photoluminescence study of AlAs/GaAs superlattices containing enlarged wells 2000 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 364:1, s. 224-227 Tidskriftsartikel (refereegranskat)abstract Photoluminescence (PL) spectra of MBE grown short-period AlAs/GaAs superlattices with one or two enlarged wells (5 and 12 nm) have been measured at 2 K. Sharp PL peaks corresponding to excitonic transitions between the lowest electron and heavy-hole states in the enlarged wells are observed. The excitonic transition energies are calculated by means of an envelope function based model, taking into account the exciton binding energies. The model incorporates a smooth potential at the interfaces, which is represented by a diffusion potential, the diffusion length being a parameter. The calculated and experimentally observed excitonic transition energies agree well if diffusion lengths of 3.5 and 4.5 monolayers are considered in the samples with and without a buffer layer, respectively. These values are consistent with the complicated nature of the growth kinetics and mechanisms of quantum heterostructures. The PL spectra reveal also complicated structures connected with the superlattice. Their qualitative discussion confirms the smooth potential model. Thus, an attempt is made to extend the analysis of complicated AlAs/GaAs heterostructures towards real interfaces, which is essential for advanced device fabrication.
19.	Dutta, Joydeep, et al. (författare) Variations in structural and electrical properties of magnetron-sputtered indium tin oxide films with deposition parameters 1988 Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 162:C, s. 119-127 Tidskriftsartikel (refereegranskat)
20.	Edwards, N.V., et al. (författare) Optical characterization of wide bandgap semiconductors 2000 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 364:1, s. 98-106 Tidskriftsartikel (refereegranskat)abstract Our work primarily concerns the characterization of wide-gap III-V nitride semiconductors, nondestructively and at variable temperature, with spectroscopic ellipsometry (SE) and reflectometry in the spectral range from 1.5 to 6 eV. In the case of GaN, there are three main concerns associated with such data: (a) the quantification of the dispersion of the index of refraction with energy, (b) the removal of surface overlayers in real-time, and (c) the determination of the variation of valence bands with biaxial stress and the quantification of residual stress in thin films. The SE and reflectance capabilities provide (1) broadband spectra from 1.5 to 6 eV, which yield information about (a) below the bandgap and (b) above it, and (2) high resolution spectra (less than 1 meV at 3.4 eV) in the vicinity of the gap (3.3-3.6 eV), which enables (c). Here we will discuss issues concerning the relation of (c) to GaN material and growth parameters, though similar data for other wide bandgap materials will be discussed where relevant. Specifically, optimal heterostructure design for potential valence band engineering applications will be discussed in the context of trends in residual stress as a function of film thickness, growth temperature and substrate orientation for GaN/AlN/6H-SiC heterostructures. Standard heterostructures are mostly compressive for samples less than about 0.7 µm thick, are tensile up to about 2 µm and then abruptly become less tensile with stress values near 1 kbar thereafter. Additionally, these trends can be circumvented for moderately thick (approximately 2 µm) GaN layers (normally>2 kbar, tensile) by the introduction of a `buried interface' approach, namely, a strain mediating layer (SML) above the standard high-temperature AlN buffer layer designed to yield a range of compressive stresses from 0 to 2 kbar. The strain characteristics but also the growth rates of subsequently deposited nitride layers can be modulated by changing the growth parameters of the SML. This is achieved by in situ techniques during crystal growth without degrading the optical and structural properties of the deposited layer, as confirmed by XRD, SEM, PL, and AFM data taken on the overlying GaN layers. These results are interpreted in terms of coefficient of thermal expansion data for the layers and data concerning the planarization of GaN layers and growth behavior in non-(0001) directions.
21.	Enquist, F., et al. (författare) The fabrication of amorphous SiO2 substrates suitable for transmission electron microscopy studies of ultrathin polycrystalline films 1986 Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 145:1, s. 99-104 Tidskriftsartikel (refereegranskat)abstract A method to produce SiO2 transmission electron microscopy substrates by means of silicon micromachining is described. The substrate consists of an SiO2 window 50–200 nm thick suspended in a silicon frame. It was developed to enable the study of ultrathin porous gate metals grown on the same substrate as in the device studied. The thin film to be studied can be vapour phase deposited directly onto the substrate and then without any further manipulations inserted into the transmission electron microscope.
22.	Eriksson, Mats, 1963-, et al. (författare) Morphology changes of thin Pd films grown on SiO2: influence of adsorbates and temperature 1999 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 342:1-2, s. 297-306 Tidskriftsartikel (refereegranskat)abstract Under certain conditions morphology changes occur when thin Pd films, grown on SiO2 at room temperature, are subject to elevated temperatures. First holes in the metal are observed, followed by network formation and finally isolation of metal islands. This process is known as agglomeration. The influence of gas exposures on this restructuring process has been studied by following variations in the capacitance of the structure and by atomic force microscopy, transmission electron microscopy and ultraviolet photoelectron spectroscopy. The capacitance measurements show that carbonaceous species have an impeding influence on the rate of agglomeration and may lock the film structure in a thermodynamic non-equilibrium state. By removing these species with oxygen exposure, i.e. by forming volatile CO and CO2, a clean surface is obtained and the agglomeration process can proceed. High oxygen or hydrogen coverages also lower the rate of restructuring, compared to the case of a clean surface. For the clean Pd surface, an apparent activation energy of 0.64 eV is found for the restructuring process.
23.	Greczynski, G., et al. (författare) Polymer interfaces studied by photoelectron spectroscopy : Li on polydioctylfluorene and Alq3 2000 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 363:1, s. 322-326 Tidskriftsartikel (refereegranskat)abstract The behavior of lithium atoms deposited on the surfaces of ultra-thin spin-coated films of poly(dioctylfluorene), and of condensed molecular solid films of tris(8-hydroxyquinoline) aluminum, have been studied through a combined experimental-theoretical approach. The Li-atoms donate charges to the organic systems, leading to doping-induced electronic states in the otherwise forbidden energy gap. The changes in the electronic structure induced by charge transfer from the Li-atoms are different in the two materials studied, and depend upon the localization of the electronic states to which the electrons are transferred. In the case of the delocalized wave functions of the p-system of poly(dioctylfluorene), at low doping levels, the added charges lead to the formation of polaron states, while at higher doping concentrations, bipolaron states are formed. In the case of the tris(8-hydroxyquinoline) aluminum, however, up to a level of three added electrons per molecule, the added electrons reside in states localized on each of the three ligands.
24.	Grivickas, V., et al. (författare) Spatially and time-resolved infrared absorption for optical and electrical characterization of indirect band gap semiconductors 2000 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 364:02-jan, s. 181-185 Tidskriftsartikel (refereegranskat)abstract The current status of the spatially and time-resolved free-carrier absorption (FCA) method is provided. The FCA technique allows monitoring carrier dynamics in a time scale from nanoseconds to miliseconds by employing either collinear or orthogonal geometry between pump and probe beams. A high spatial resolution is achieved allowing in-depth carrier profiles to be extracted. The method is particularly suited for investigation of injection-dependent optical and recombination phenomena: band gap optical absorption, Shockley-Read-Hall (SRH) lifetime, Auger recombination coefficient, and the injection-dependent surface (interface) recombination velocity. We summarize important aspects of the technique demonstrating numerous measurements that have been implemented in studies of bulk Si, epilaxial 4H-SiC and porous silicon.
25.	Hammar, M., et al. (författare) Investigation of chemically vapour deposited tungsten and tungsten silicide as contacts to n+ and p+ silicon areas 1990 Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 185:1, s. 9-19 Tidskriftsartikel (refereegranskat)abstract Tungsten and WSi2 have been examined as contact barriers between aluminium and n+ - or p+ -Si. The specific contact resistivity and diode leakage current were evaluated after heat treatment at different temperatures. Rutherford backscattering spectrometry measurements, X-ray diffraction analysis, scanning electron microscopy and sheet resistance measurements were performed to study the thermal stabilities of the Al/W/Si and Al/WSi2/Si systems. The contact resistivities of chemically vapour deposited tungsten and WSi2 to n+ -Si with a surface concentration of 7.5 × 1019 cm-3 were 8 × 10-7 Ωcm2 and 9 × 10-7 Ωcm2 respectively. To p+ -Si with a surface concentration of 2.6 × 1019 cm-3, they were 5 × 10-6 and 1 × 10-6 Ωcm2. Diffusion of aluminium was revealed to occur above 475°C in the case of tungsten and at 475°C in the case of WSi2. The void formation in silicon substrates was observed after heat treatment at 500°C for the Al/WSi2/Si system. The increase in leakage current for the Al/W/Si and Al/WSi2/Si structures is related to the onset of Si-Al interpenetration. Alloy formation was observed at 500°C for tungsten contacts whereas W-Al or other alloys were not detected up to 600°C for the WSi2 contact.

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