| 1. |
- Zhu, Zhongyunshen, et al.
(författare)
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Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
- 2022
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 33:7
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Tidskriftsartikel (refereegranskat)abstract
- GaSb is considered as an attractive p-type channel material for future III-V metal-oxide-semiconductor (MOS) technologies, but the processing conditions to utilize the full device potential such as low power logic applications and RF applications still need attention. In this work, applying rapid thermal annealing (RTA) to nanoscale GaSb vertical nanowire p-type MOS field-effect transistors, we have improved the average peak transconductance (g m,peak) by 50% among 28 devices and achieved 70 μS μm-1 at V DS = -0.5 V in a device with 200 nm gate length. In addition, a low subthreshold swing down to 144 mV dec-1 as well as an off-current below 5 nA μm-1 which refers to the off-current specification in low-operation-power condition has been obtained. Based on the statistical analysis, the results show a great enhancement in both on- and off-state performance with respect to previous work mainly due to the improved electrostatics and contacts after RTA, leading to a potential in low-power logic applications. We have also examined a short channel device with L g = 80 nm in RTA, which shows an increased g m,peak up to 149 μS μm-1 at V DS = -0.5 V as well as a low on-resistance of 4.7 kΩ•μm. The potential of further enhancement in g m via RTA offers a good alternative to obtain high-performance devices for RF applications which have less stringent requirement for off-state performance. Our results indicate that post-fabrication annealing provides a great option to improve the performance of GaSb-based p-type devices with different structures for various applications.
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| 2. |
- Dick Thelander, Kimberly, et al.
(författare)
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Height-controlled nanowire branches on nanotrees using a polymer mask
- 2007
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:3
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Tidskriftsartikel (refereegranskat)abstract
- The production of complex three-dimensional dendritic structures is an important step in the application of semiconductor nanowires. One promising method for achieving this is the sequential seeding of multiple generations of epitaxial nanowires using metal seed particles. However, it is difficult to control and predict the position of second and higher generation nanowires with respect to the first generation. Here we demonstrate a procedure for controlling the position of second-generation epitaxial nanowire branches on vertically aligned nanowire trunks. This method uses a spun-on polymer layer that masks first-generation wires to a specified height, preventing the growth of nanowire branches at lower positions as well as new nanowire growth on the substrate. This method appears not to be dependent on the materials or growth system (in this case MOVPE-grown GaP is demonstrated), and hence is likely to be applicable to a variety of materials systems and growth procedures using metal seed particles.
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| 3. |
- Larsson, Magnus, et al.
(författare)
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Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires
- 2007
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:1
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Tidskriftsartikel (refereegranskat)abstract
- The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
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| 4. |
- Lindgren, David, et al.
(författare)
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Study of carrier concentration in single InP nanowires by luminescence and Hall measurements
- 2015
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 26:4
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Tidskriftsartikel (refereegranskat)abstract
- The free electron carrier concentrations in single InP core-shell nanowires are determined by micro-photoluminescence, cathodoluminescence (CL) and Hall effect measurements. The results from luminescence measurements were obtained by solving the Fermi-Dirac integral, as well as by analyzing the peak full width at half maximum (FWHM). Furthermore, the platform used for Hall effect measurements, combined with spot mode CL spectroscopy, is used to determine the carrier concentrations at specific positions along single nanowires. The results obtained via luminescence measurements provide an accurate and rapid feedback technique for the epitaxial development of doping incorporation in nanowires. The technique has been employed on several series of samples in which growth parameters, such as V/III-ratio, temperature and dopant flows, were investigated in an optimization procedure. The correlation between the Hall effect and luminescence measurements for extracting the carrier concentration of different samples were in excellent agreement.
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| 5. |
- Thiagarajan, Kannan, 1981-, et al.
(författare)
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High-field electron transport in semiconducting zigzag carbon nanotubes
- 2012
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Ingår i: Nanotechnology. - Bristol, England : IOP Publishing. - 0957-4484 .- 1361-6528. ; 23:26, s. 265703-265709
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Tidskriftsartikel (refereegranskat)abstract
- Electron transport in semiconducting zigzag carbon nanotubes is studied by solving the Boltzmann transport equation using the single-particle Monte Carlo technique. The electronic band structure is based on a standard nearest-neighbour tight-binding parameterisation, and the phonon spectrum is calculated using a fourth nearest-neighbour force constant model. The electron-phonon scattering probabilities are calculated within a tight-binding formalism. The steady-state drift velocities for the semiconducting zigzag nanotubes (8,0), (10,0), (11,0), (13,0), and (25,0) are computed as functions of electric field strength and temperature, and the results are analysed here. The results show the presence of negative differential resistance at high electric fields for some of the nanotubes. The drift velocity and the low field mobility reach a maximum value of and, respectively, for a (25,0) nanotube.
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| 6. |
- Håkanson, Ulf, et al.
(författare)
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Nano-aperture fabrication for single quantum dot spectroscopy
- 2003
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 14:6, s. 675-679
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Tidskriftsartikel (refereegranskat)abstract
- We present a simple and controllable method for fabricating nano-apertures in a metal film using polystyrene nano-spheres as masks during the metal evaporation. We show how the processing conditions used during deposition of the spheres such as spin velocity, nano-sphere concentration and a reduction of the surface tension interplay and control the distribution of spheres. The fabrication method is ideal for luminescence studies by isolating individual nanometre-sized objects, which is exemplified by photoluminescence spectroscopy of single self-assembled Stranski-Krastanow quantum dots.
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| 7. |
- Abbondanza, Giuseppe, 1991, et al.
(författare)
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Hydride formation and dynamic phase changes during template-assisted Pd electrodeposition
- 2023
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Ingår i: Nanotechnology. - 1361-6528 .- 0957-4484. ; 34:50
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Tidskriftsartikel (refereegranskat)abstract
- We investigated the structural evolution of electrochemically fabricated Pd nanowires in situ by means of grazing-incidence transmission small- and wide-angle x-ray scattering (GTSAXS and GTWAXS), x-ray fluorescence (XRF) and two-dimensional surface optical reflectance (2D-SOR). This shows how electrodeposition and the hydrogen evolution reaction (HER) compete and interact during Pd electrodepositon. During the bottom-up growth of the nanowires, we show that beta-phase Pd hydride is formed. Suspending the electrodeposition then leads to a phase transition from beta-phase Pd hydride to alpha-phase Pd. Additionally, we find that grain coalescence later hinders the incorporation of hydrogen in the Pd unit cell. GTSAXS and 2D-SOR provide complementary information on the volume fraction of the pores occupied by Pd, while XRF was used to monitor the amount of Pd electrodeposited.
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| 8. |
- Aïssa, B., et al.
(författare)
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Functionalized single-walled carbon-nanotube-blended P3HT-based high performance memory behavior thin-film transistor devices
- 2020
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 31:7
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Tidskriftsartikel (refereegranskat)abstract
- We report on the fabrication and transport properties of single-walled carbon nanotubes (SWCNT) blended with P3HT (poly 3-hexyl thiophene-2, 5-diyl). The composite is used as a hybrid organic active channel transistor. The performances of the fabricated devices were investigated as a function of the SWCNTs' loads in the composite, and their response evaluated under white light illumination. Our results show that for SWCNT loads ≤1.5 wt%, all the devices behave as p-type transistors, exhibiting excellent performance, with an I on /I off ratio of 104 and a maximum on-state current (I on) exceeding 80 μA. Moreover, compared with pristine transistors with a P3HT channel, the Hall mobility of these hybrid TFTs was found to increase by more than one order of magnitude, i.e. increasing from 0.062 to 1.54 cm2 V-1 s-1. Finally, under light illumination, the transfer characteristics (i.e. I DS as a function of V GS) were found to systematically undergo a typical shift together with a fully-reversible memory behavior. A fundamental understanding of this work can assist in providing new routes for the development of reliable efficient hybrid organic-based optoelectronic devices.
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| 9. |
- Anttu, Nicklas, et al.
(författare)
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Absorption and transmission of light in III-V nanowire arrays for tandem solar cell applications
- 2017
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 28:20
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Tidskriftsartikel (refereegranskat)abstract
- III-V semiconductor nanowires are a platform for next-generation photovoltaics. An interesting research direction is to embed a nanowire array in a transparent polymer, either to act as a stand-alone flexible solar cell, or to be stacked on top of a conventional Si bottom cell to create a tandem structure. To optimize the tandem cell performance, high energy photons should be absorbed in the nanowires whereas low energy photons should be transmitted to and absorbed in the Si cell. Here, through optical measurements on 1.95 eV bandgap GaInP nanowire arrays embedded in a polymer membrane, we identify two mechanisms that could be detrimental for the performance of the tandem cell. First, the Au particles used in the nanowire synthesis can absorb >50% of the low-energy photons, leading to a <40% transmittance, even though the Au particles cover <15% of the surface area. The removal of the Au particles can recover the transmission of low energy photons to >80%. Second, after the removal of the Au particles, a 40% reflectance peak shows up due to resonant back-scattering of light from in-plane waveguide modes. To avoid the excitation of these optical modes in the nanowire array, we propose to limit the pitch of the nanowire array.
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| 10. |
- Borg, Mattias, et al.
(författare)
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Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- 2019
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 30:8
-
Tidskriftsartikel (refereegranskat)abstract
- InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and relatively low interface defect density in dielectric gate stacks. Therefore, integrating InGaAs devices with the established Si platforms is highly important. Using template-assisted selective epitaxy (TASE), InGaAs nanowires can be monolithically integrated with high crystal quality, although the mechanisms of group III incorporation in this ternary material have not been thoroughly investigated. Here we present a detailed study of the compositional variations of InGaAs nanostructures epitaxially grown on Si(111) and Silicon-on-insulator substrates by TASE. We present a combination of XRD data and detailed EELS maps and find that the final Ga/In chemical composition depends strongly on both growth parameters and the growth facet type, leading to complex compositional sub-structures throughout the crystals. We can further conclude that the composition is governed by the facet-dependent chemical reaction rates at low temperature and low V/III ratio, while at higher temperature and V/III ratio, the incorporation is transport limited. In this case we see indications that the transport is a competition between Knudsen flow and surface diffusion.
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| 11. |
- Buchanan, Claire, et al.
(författare)
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C-amidation of substituted β 3oligoamides yields novel supramolecular assembly motif
- 2022
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 33:2
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Tidskriftsartikel (refereegranskat)abstract
- N-acylated substituted β 3 oligoamides are known to form unique supramolecular nanorods based on a 3-point hydrogen bond self-assembly motif. This motif is an intermolecular extension of the hydrogen bonding network that stabilizes the 14-helix secondary structure unique to β 3 oligoamides. Acetylation of the N-terminus of the molecule provides the necessary third hydrogen bond pair of the motif. Here, the possibility of introducing the third hydrogen bond pair via amidation of the C terminus is investigated. While similar in purpose, this modification introduces a chemically distinct new self-assembly motif, also removing the bulky carboxyl group that does not fold into the 14 helix positioning instead as a side chain. Three substituted β 3 oligoamide variants with the base sequence LIA (where the letters denote β 3 residues with side chains analogous to α amino acids) were compared: N-acylated Ac-β 3[LIA] as a reference, C-amidated β 3[LIA]-CONH2, and β 3[LIA] with free unmodified N and C termini as a negative control. The three variants were dissolved in water to promote self-assembly. The self-assembly was characterised using mid- and far-infrared spectroscopy, small angle x-ray scattering (SAXS) and atomic force microscopy (AFM). IR measurements confirmed that all three samples were in a similar conformation, consistent with pseudo 14-helical secondary structures. Far-infrared spectroscopy measurements of β 3[LIA]-CONH2 showed distinct peaks consistent with highly organised skeletal modes, i.e. regular supramolecular assembly, that was largely absent from the other two oligoamides. Modelling of SAXS data is consistent with elliptical cylinder structures resulting from nanorod bundling for both β 3[LIA]-CONH2 and Ac-β 3[LIA], but not in the unmodified sample. Consistently, AFM imaging showed large nanorod bundling structures in β 3[LIA]-CONH2, varied bundling structures in Ac-β 3[LIA], and only aggregation in β 3[LIA]. Amidation showed much more organised and robust assembly compared to acetylation, providing a new, easy to synthesize self-assembly motif for helical nanorod assembly that is similar but distinct to N-acylation
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| 12. |
- Böckle, R., et al.
(författare)
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Ge quantum wire memristor
- 2020
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 31:44
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Tidskriftsartikel (refereegranskat)abstract
- Despite being known of for decades, the actual realization of memory devices based on the memristive effect is progressing slowly, due to processing requirements and the need for exotic materials which are not compatible with today's complementary-metal-oxide-semiconductor (CMOS) technology. Here, we report an experimental study on a Ge quantum wire device featuring distinct signatures of memristive behavior favorable for integration in CMOS platform technology. Embedding the quasi-1D Ge quantum wire into an electrostatically modulated back-gated field-effect transistor, we demonstrate that individual current transport channels can be addressed directly by controlling the surface trap assisted electrostatic gating. The resulting quantization of the current represents the ultimate limit of memristors with practically zero off-state current and low footprint. In addition, the proposed device has the advantage of non-destructive successive reading cycles capability. Importantly, our findings provide a framework towards fully CMOS compatible ultra-scaled Ge based memristors.
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| 13. |
- Chalangar, Ebrahim, 1984-, et al.
(författare)
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Influence of morphology on electrical and optical properties of graphene/Al-doped ZnO-nanorod composites
- 2018
-
Ingår i: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 29:41
-
Tidskriftsartikel (refereegranskat)abstract
- The development of future 3D-printed electronics relies on the access to highly conductive inexpensive materials that are printable at low temperatures (<100 C). The implementation of available materials for these applications are, however, still limited by issues related to cost and printing quality. Here, we report on the simple hydrothermal growth of novel nanocomposites that are well suited for conductive printing applications. The nanocomposites comprise highly Al-doped ZnO nanorods grown on graphene nanoplatelets (GNPs). The ZnO nanorods play the two major roles of (i) preventing GNPs from agglomerating and (ii) promoting electrical conduction paths between the graphene platelets. The effect of two different ZnO-nanorod morphologies with varying Al-doping concentration on the nanocomposite conductivity and the graphenedispersity are investigated. Time-dependent absorption, photoluminescence and photoconductivity measurements show that growth in high pH solutions promotes a better graphene dispersity, higher doping levels and enhanced bonding between the graphene and the ZnO nanorods. Growth in low pH solutions yields samples characterized by a higher conductivity and a reduced number of surface defects. These samples also exhibit a large persistent photoconductivity attributed to an effective charge separation and transfer from the nanorods to the graphene platelets. Our findings can be used to tailor the conductivity of novel printable composites, or for fabrication of large volumes of inexpensive porous conjugated graphene-semiconductor composites. © 2018 IOP Publishing Ltd.
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| 14. |
- Chalangar, Ebrahim, PhD student, 1984-, et al.
(författare)
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Nanopatterned rGO/ZnO : Al seed layer for vertical growth of single ZnO nanorods
- 2023
-
Ingår i: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 34:25, s. 1-7
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we demonstrate a novel low-cost template-assisted route to synthesize vertical ZnO nanorod arrays on Si (100). The nanorods were grown on a patterned double seed layer comprised of reduced graphene oxide (rGO) and Al-doped ZnO nanoparticles. The seed layer was fabricated by spray-coating the substrate with graphene and then dip-coating it into a Al-doped ZnO sol-gel solution. The growth template was fabricated from a double-layer resist, spin-coated on top of the rGO/ZnO:Al seed layer, and patterned by colloidal lithography. The results show a successful chemical bath deposition of vertically aligned ZnO nanorods with controllable diameter and density in the nanoholes in the patterned resist mask. Our novel method can presumably be used to fabricate electronic devices on virtually any smooth substrate with a thermal budget of 1 min at 300 °C with the seed layer acting as a conductive strain-relieving back contact. The top contact can simply be made by depositing a suitable transparent conductive oxide or metal, depending on the specific application. © 2023 The Author(s). Published by IOP Publishing Ltd.
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| 15. |
- Chayanun, Lert, et al.
(författare)
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Spectrally resolved x-ray beam induced current in a single InGaP nanowire
- 2018
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 29:45
-
Tidskriftsartikel (refereegranskat)abstract
- We demonstrate x-ray absorption fine structure spectroscopy (XAFS) detected by x-ray beam induced current (XBIC) in single n + -i-n + doped nanowire devices. Spatial scans with the 65 nm diameter beam show a peak of the XBIC signal in the middle segment of the nanowire. The XBIC and the x-ray fluorescence signals were detected simultaneously as a function of the excitation energy near the Ga K absorption edge at 10.37 keV. The spectra show similar oscillations around the edge, which shows that the XBIC is limited by the primary absorption. Our results reveal the feasibility of the XBIC detection mode for the XAFS investigation in nanostructured devices.
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| 16. |
- Chen, Yang, et al.
(författare)
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Optical far-field extinction of a single GaAs nanowire towards in situ size control of aerotaxy nanowire growth
- 2020
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 31:13
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Tidskriftsartikel (refereegranskat)abstract
- A substrate-free approach of semiconductor nanowire growth has been achieved by the aerotaxy technique previously. In this work, we propose an in situ method to monitor the size of nanowires through non-destructive optical-extinction measurements. Our work aims to build a theoretical look-up database of extinction spectra for a single nanowire of varying dimensions. We describe the origin of possible peaks in the spectra, for example due to nanowire-length dependent Fabry-Perot resonances and nanowire-diameter dependent TM and TE mode resonances. Furthermore, we show that the Au catalyst on top of the nanowire can be ignored in the simulations when the volume of the nanowire is an order of magnitude larger than that of the Au catalyst and the diameter is small compared to the incident wavelength. For the calculation of the extinction spectra, we use the finite element method, the discrete dipole approximation and the Mie theory. To compare with experimental measurements of randomly oriented nanowires, we perform an averaging over nanowire orientation for the modeled results. However, in the experiments, nanowires are accumulating on the quartz window of the measurement setup, which leads to increasing uncertainty in the comparison with the experimental extinction spectra. This uncertainty can be eliminated by considering both a sparse and a dense collection of nanowires on the quartz window in the optical simulations. Finally, we create a database of extinction spectra for a GaAs nanowire of varying diameters and lengths. This database can be used to estimate the diameter and the length of the nanowires by comparing the position of a peak and the peak-to-shoulder difference in the extinction spectrum. Possible tapering of nanowires can be monitored through the appearance of an additional peak at a wavelength of 700-800 nm.
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| 17. |
- Chen, Yang, et al.
(författare)
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Optimized efficiency in InP nanowire solar cells with accurate 1D analysis
- 2018
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 29:4
-
Tidskriftsartikel (refereegranskat)abstract
- Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.
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| 18. |
- Corrêa, Gregório B., et al.
(författare)
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Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation
- 2019
-
Ingår i: Nanotechnology. - Bristol : IOP Publishing. - 0957-4484 .- 1361-6528. ; 30:33
-
Tidskriftsartikel (refereegranskat)abstract
- Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm-1) observed in Mn ion-implanted NWs, which we attribute to Eg (TO) and A1g (LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell.
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| 19. |
- Dagyte, Vilgaile, et al.
(författare)
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Growth kinetics of GaxIn(1−x)P nanowires using triethylgallium as Ga precursor
- 2018
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 29:39
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Tidskriftsartikel (refereegranskat)abstract
- GaxIn(1−x)P nanowire arrays are promising for various optoelectronic applications with a tunable band-gap over a wide range. In particular, they are well suited as the top cell in tandem junction solar cell devices. So far, most GaxIn(1−x)P nanowires have been synthesized by the use of trimethylgallium (TMGa). However, particle assisted nanowire growth in metal organic vapor phase epitaxy is typically carried out at relatively low temperatures, where TMGa is not fully pyrolysed. In this work, we developed the growth of GaxIn(1−x)P nanowires using triethylgallium (TEGa) as the Ga precursor, which reduced Ga precursor consumption by about five times compared to TMGa due to the lower homogeneous pyrolysis temperature of TEGa. The versatility of TEGa is shown by synthesis of high yield GaxIn(1−x)P nanowire arrays, with a material composition tunable by the group III input flows, as verified by x-ray diffraction measurements and photoluminescence characterization. The growth dynamics of GaxIn(1−x)P nanowires was assessed by varying the input growth precursor molar fractions and growth temperature, using hydrogen-chloride as in situ etchant. We observed a complex interplay between the precursors. First, trimethylindium (TMIn) inhibits Ga incorporation into the nanowires, resulting in higher In composition in the grown nanowires than in the vapor. Second, the growth rate increases with temperature, indicating a kinetically limited growth, which from nanowire effective binary volume growth rates of InP and GaP can be attributed to the synthesis of GaP in GaxIn(1−x)P. We observed that phosphine has a strong effect on the nanowire growth rate with behavior expected for a unimolecular Langmuir–Hinshelwood mechanism of pyrolysis on a catalytic surface. However, growth rates increase strongly with both TEGa and TMIn precursors as well, indicating the complexity of vapor–liquid–solid growth for ternary materials. One precursor can affect the decomposition of another, and each precursor can affect the wetting properties and catalytic activity of the metal particle.
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| 20. |
- Dagytė, Vilgailė, et al.
(författare)
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Modal analysis of resonant and non-resonant optical response in semiconductor nanowire arrays
- 2019
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 30:2
-
Tidskriftsartikel (refereegranskat)abstract
- Nanowire array solar cells have reached efficiencies where it becomes feasible to talk about creating tandem solar cells in order to achieve even higher efficiencies. An example of such a tandem solar cell could be a nanowire array embedded in a membrane and integrated on top of a Si bottom cell. Such a system, however, requires understanding and control of its interaction with light, especially to make sure that the low energy photons are transmitted to the bottom cell. The dependence of the optical response of a nanowire array on the nanowire length, diameter, array pitch, materials surrounding the nanowires, and absorption coefficient of the nanowire material is very strong and possibly resonant, indicating the complexity of the optical response. In this work, we use an eigenmode-based analysis to reveal underlying physics that gives rise to observed resonant and non-resonant behavior. First, we show that an effective refractive index can be defined at long wavelengths, where only a single mode propagates. Second, we analyze the origin of the resonant reflection when the next optical mode becomes propagating and can be 'trapped' in the array and interact with the fundamental mode. Additionally, we define two simple boundaries for the wavelength range of the resonant response: the resonances can only occur if there is more than 1 propagating mode in the array, and they disappear if the 1st diffracted order is propagating in the top or bottom material. Such resonance effects could be detrimental for tandem solar cells. We thus provide recommendations for tuning the geometry of the array and the nanowire materials in order to push the resonant regime to the absorbing regime of the nanowire, where absorption in the nanowires dampens the resonances. Finally, this work demonstrates the strength of an eigenmode-based analysis of the optical response of periodic nanostructures in terms of simplifying the analysis of a complex system.
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| 21. |
- Dagyte, Vilgaile, et al.
(författare)
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Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate
- 2017
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 28:50
-
Tidskriftsartikel (refereegranskat)abstract
- Time-resolved photoluminescence (TRPL) measurements of nanowires (NWs) are often carried out on broken-off NWs in order to avoid the ensemble effects as well as substrate contribution. However, the development of NW-array solar cells could benefit from non-destructive optical characterization to allow faster feedback and further device processing. With this work, we show that different NW array and substrate spectral behaviors with delay time and excitation power can be used to determine which part of the sample dominates the detected spectrum. Here, we evaluate TRPL characterization of dense periodic as-grown GaAs NW arrays on a p-type GaAs substrate, including a sample with uncapped GaAs NWs and several samples passivated with AlGaAs radial shell of varied composition and thickness. We observe a strong spectral overlap of substrate and NW signals and find that the NWs can absorb part of the substrate luminescence signal, thus resulting in a modified substrate signal. The level of absorption depends on the NW-array geometry, making a deconvolution of the NW signal very difficult. By studying TRPL of substrate-only and as-grown NWs at 770 and 400 nm excitation wavelengths, we find a difference in spectral behavior with delay time and excitation power that can be used to assess whether the signal is dominated by the NWs. We find that the NW signal dominates with 400 nm excitation wavelength, where we observe two different types of excitation power dependence for the NWs capped with high and low Al composition shells. Finally, from the excitation power dependence of the peak TRPL signal, we extract an estimate of background carrier concentration in the NWs.
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| 22. |
- Devi, Chandni, et al.
(författare)
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Electrical transport properties of InAs nanowires synthesized by a solvothermal method
- 2020
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Ingår i: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 31:23
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Tidskriftsartikel (refereegranskat)abstract
- Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices. © 2020 IOP Publishing Ltd.
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| 23. |
- Dorsch, S., et al.
(författare)
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Side-gated, enhancement mode, InAs nanowire double quantum dot devices-toward controlling transverse electric fields in spin-transport measurements
- 2019
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 30:14
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Tidskriftsartikel (refereegranskat)abstract
- A double quantum dot system with a definitive transverse electric field in the plane of the sample is defined by combining a facile side-gating technique with enhancement mode InAs nanowires. Positive bias on the plunger gates enhance quantum dot segments along the nanowire, negative bias on barrier gates deplete regions, and situating gates biased at opposite polarities on opposing sides of the nanowire allows an electric field to be engineered. With sufficiently biased barrier regions stable bias triangle features are observed in the weak interdot coupling regime. The singlet-triplet energy splitting Δ ST in Pauli spin-blockaded features is studied as a function of an external magnetic field applied perpendicular to the sample plane. We interpret an apparent absence of mixing between singlet and triplet states as an indication that the spin-orbit field is oriented out of the sample plane due to the induced electric field. Finally, we discuss the potential of combining advanced gating architectures with enhancement mode nanowires to control the orientation of the spin-orbit field-a prospect that could enable multiple, nanowire-based spin-qubits to be operated on a single chip with a fixed-angle external magnetic field applied.
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| 24. |
- Ek, Martin, et al.
(författare)
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Compositional analysis of oxide-embedded III-V nanostructures
- 2022
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 33:37
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Tidskriftsartikel (refereegranskat)abstract
- Nanowire growth enables creation of embedded heterostructures, where one material is completely surrounded by another. Through materials-selective post-growth oxidation it is also possible to combine amorphous oxides and crystalline, e.g. III-V materials. Such oxide-embedded structures pose a challenge for compositional characterization through transmission electron microscopy since the materials will overlap in projection. Furthermore, materials electrically isolated by an embedding oxide are more sensitive to electron beam-induced alterations. Methods that can directly isolate the embedded material, preferably at reduced electron doses, will be required in this situation. Here, we analyse the performance of two such techniques-local lattice parameter measurements from high resolution micrographs and bulk plasmon energy measurements from electron energy loss spectra-by applying them to analyse InP-AlInP segments embedded in amorphous aluminium oxide. We demonstrate the complementarity of the two methods, which show an overall excellent agreement. However, in regions with residual strain, which we analyse through molecular dynamics simulations, the two techniques diverge from the true value in opposite directions.
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| 25. |
- Ek, M., et al.
(författare)
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Electron channelling : challenges and opportunities for compositional analysis of nanowires by TEM
- 2020
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 31:36
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Tidskriftsartikel (refereegranskat)abstract
- Energy dispersive x-ray spectroscopy in a transmission electron microscope is often the first method employed to characterize the composition of nanowires. Ideally, it should be accurate and sensitive down to fractions of an atomic percent, and quantification results are often reported as such. However, one can often get substantial errors in accuracy even though the precision is high: for nanowires it is common for the quantified V/III atomic ratios to differ noticeably from 1. Here we analyse the origin of this systematic error in accuracy for quantification of the composition of III-V nanowires. By varying the electron illumination direction, we find electron channelling to be the primary cause, being responsible for errors in quantified V/III atomic ratio of 50%. Knowing the source of the systematic errors is required for applying appropriate corrections. Lastly, we show how channelling effects can provide information on the crystallographic position of dopants.
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