| 1. |
- Gerasimov, G. N., et al.
(författare)
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Amplifying the VUV radiation of atomic nitrogen in helium, argon, krypton, and xenon
- 2012
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Ingår i: Journal of optical technology (Print). - 1070-9762 .- 1091-0786. ; 79:8, s. 462-469
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Tidskriftsartikel (refereegranskat)abstract
- This paper discusses the spectral features of the amplification of narrow-band radiation of atomic nitrogen in the excimeric media of inert gases, including helium, argon, krypton, and xenon. Appreciable short-wavelength shifts (up to 0.026 nm) are detected in the spectra of the amplified radiation relative to the atomic emission lines of nitrogen that initiate this radiation. The observed shifts exceeded the instrumental resolution of the spectrometer that we used, were determined by the composition of the amplifying medium, and were independent of its excitation parameters under the experimental conditions. An explanation of the observed effect is proposed.
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| 2. |
- Gerasimov, G. N., et al.
(författare)
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Mechanism for generating stimulated VUV emission of the Xe*Kr dimer in a dc capillary discharge
- 2007
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Ingår i: Journal of optical technology (Print). - 1070-9762 .- 1091-0786. ; 74:9, s. 579-584
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Tidskriftsartikel (refereegranskat)abstract
- The emission spectrum of a dc capillary discharge in krypton with a small (≤0.1%) xenon impurity has been experimentally studied in the 115-850-nm range. It is shown that most of the radiation energy is concentrated in a narrow VUV spectral band adjacent to the 146.96-nm resonance line of xenon and belonging to the heteronuclear Xe*Kr molecule. The power of the narrow-band VUV radiation and its angular dependence have been measured. A conclusion is drawn that the appearance of the narrow-band VUV radiation represents amplified spontaneous emission caused by transillumination of the broad-band amplifying medium by a narrow-band "seed."
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| 4. |
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| 5. |
- Gorokhova, E. I., et al.
(författare)
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Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic
- 2018
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Ingår i: Journal of Optical Technology (A Translation of Opticheskii Zhurnal). - 1070-9762. ; 85:11, s. 729-737
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Tidskriftsartikel (refereegranskat)abstract
- This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03–0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration to 3.44 × 1019 cm−3. As the gallium concentration increases in the range 0.05–0.1 mass % in a ceramic of composition ZnO:Ga, the defect luminescence band is suppressed and a characteristic exciton luminescence is formed with a maximum corresponding to 389 nm and a damping time constant of 1.1 ns.
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