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- Betti, S. K., et al.
(författare)
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Near-infrared Accretion Signatures from the Circumbinary Planetary-mass Companion Delorme 1 (AB)b
- 2022
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Ingår i: Astrophysical Journal Letters. - : American Astronomical Society. - 2041-8205 .- 2041-8213. ; 935:1
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Tidskriftsartikel (refereegranskat)abstract
- Accretion signatures from bound brown dwarf and protoplanetary companions provide evidence for ongoing planet formation, and accreting substellar objects have enabled new avenues to study the astrophysical mechanisms controlling the formation and accretion processes. Delorme 1 (AB)b, a ∼30–45 Myr circumbinary planetary-mass companion, was recently discovered to exhibit strong Hα emission. This suggests ongoing accretion from a circumplanetary disk, somewhat surprising given canonical gas disk dispersal timescales of 5–10 Myr. Here, we present the first NIR detection of accretion from the companion in Paβ, Paγ, and Brγ emission lines from SOAR/TripleSpec 4.1, confirming and further informing its accreting nature. The companion shows strong line emission, with Lline ≈ 1–6 × 10−8 L⊙ across lines and epochs, while the binary host system shows no NIR hydrogen line emission (Lline < 0.32–11 × 10−7 L⊙). Observed NIR hydrogen line ratios are more consistent with a planetary accretion shock than with local line excitation models commonly used to interpret stellar magnetospheric accretion. Using planetary accretion shock models, we derive mass accretion rate estimates of Ṁpla∼3–4 × 10−8 MJ yr−1, somewhat higher than expected under the standard star formation paradigm. Delorme 1 (AB)b's high accretion rate is perhaps more consistent with formation via disk fragmentation. Delorme 1 (AB)b is the first protoplanet candidate with clear (signal-to-noise ratio ∼5) NIR hydrogen line emission.
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- Balmer, G., et al.
(författare)
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ISAAC : A REXUS STUDENT EXPERIMENT TO DEMONSTRATE AN EJECTION SYSTEM WITH PREDEFINED DIRECTION
- 2015
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Ingår i: EUROPEAN ROCKET AND BALLOON. - 9789292212940 ; , s. 235-242
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Konferensbidrag (refereegranskat)abstract
- ISAAC - Infrared Spectroscopy to Analyse the middle Atmosphere Composition was a student experiment launched from SSC's Esrange Space Centre, Sweden, on 29th May 2014, on board the sounding rocket REXUS 15 in the frame of the REXUS/BEXUS programme. The main focus of the experiment was to implement an ejection system for two large Free Falling Units (FFUs) (240 mm x 80 mm) to be ejected from a spinning rocket into a predefined direction. The system design relied on a spring-based ejection system. Sun and angular rate sensors were used to control and time the ejection. The flight data includes telemetry from the Rocket Mounted Unit (RMU), received and saved during flight, as well as video footage from the GoPro camera mounted inside the RMU and recovered after the flight. The FFUs' direction, speed and spin frequency as well as the rocket spin frequency were determined by analyzing the video footage. The FFU-Rocket-Sun angles were 64.3 degrees and 104.3 degrees, within the required margins of 90 degrees +/- 45 degrees. The FFU speeds were 3.98 m/s and 3.74 m/s, lower than the expected 5 +/- 1 m/s. The FFUs' spin frequencies were 1.38 Hz and 1.60 Hz, approximately half the rocket's spin frequency. The rocket spin rate slightly changed from 3.163 Hz before the ejection to 3.117 Hz after the ejection of the two FFUs. The angular rate, sun sensor data and temperature on the inside of the rocket module skin were also recorded. The experiment design and results of the data analysis are presented in this paper.
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- Balmer, R. S., et al.
(författare)
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Unlocking diamond's potential as an electronic material
- 2008
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Ingår i: Philosophical Transactions. Series A. - London : Royal Society of London. - 1364-503X .- 1471-2962. ; 366:1863, s. 251-265
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we review the suitability of diamond as a semiconductor material for high-performance electronic applications. The current status of the manufacture of synthetic diamond is reviewed and assessed. In particular, we consider the quality of intrinsic material now available and the challenges in making doped structures suitable for practical devices. Two practical applications are considered in detail. First, the development of high-voltage switches capable of switching voltages in excess of 10kV. Second, the development of diamond MESFETs for high-frequency and high-power applications. Here device data are reported showing a current density of more than 30mAmm -1 along with small-signal RF measurements demonstrating gigahertz operation. We conclude by considering the remaining challenges which will need to be overcome if commercially attractive diamond electronic devices are to be manufactured.
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- Bell, E., et al.
(författare)
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Biogeochemical cycling by a low-diversity microbial community in deep groundwater
- 2018
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Ingår i: Frontiers in Microbiology. - : Frontiers Media S.A.. - 1664-302X. ; 9:SEP
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Tidskriftsartikel (refereegranskat)abstract
- Olkiluoto, an island on the south-west coast of Finland, will host a deep geological repository for the storage of spent nuclear fuel. Microbially induced corrosion from the generation of sulphide is therefore a concern as it could potentially compromise the longevity of the copper waste canisters. Groundwater at Olkiluoto is geochemically stratified with depth and elevated concentrations of sulphide are observed when sulphate-rich and methane-rich groundwaters mix. Particularly high sulphide is observed in methane-rich groundwater from a fracture at 530.6 mbsl, where mixing with sulphate-rich groundwater occurred as the result of an open drill hole connecting two different fractures at different depths. To determine the electron donors fuelling sulphidogenesis, we combined geochemical, isotopic, metagenomic and metaproteomic analyses. This revealed a low diversity microbial community fuelled by hydrogen and organic carbon. Sulphur and carbon isotopes of sulphate and dissolved inorganic carbon, respectively, confirmed that sulphate reduction was ongoing and that CO2 came from the degradation of organic matter. The results demonstrate the impact of introducing sulphate to a methane-rich groundwater with limited electron acceptors and provide insight into extant metabolisms in the terrestrial subsurface.
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- Rashid, S. J., et al.
(författare)
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Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis
- 2008
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 55:10, s. 2744-2756
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Tidskriftsartikel (refereegranskat)abstract
- High-quality electronic-grade intrinsic chemical-vapor-deposited (CVD) single-crystal diamond layers having exceptionally high carrier mobilities have been reported by Isberg et al. This makes the realization of novel electronic devices in diamond, particularly for high-voltage and high-temperature applications, a viable proposition. As such, material models which can capture the particular features of diamond as a semiconductor are required to analyze, optimize, and quantitatively design new devices. For example, the incomplete ionization of boron in diamond and the transition to metallic conduction in heavily boron-doped layers require accurate carrier freeze-out models to be included in the simulation of diamond devices. Models describing these phenomena are proposed in this paper and include numerical approximation of intrinsic diamond which is necessary to formulate doping- and temperature-dependent mobility models. They enable a concise numerical description of single-crystal diamond which agrees with data obtained from material characterization. The models are verified by application to new Schottky m-i-p(+) diode structures in diamond. Simulated forward characteristics show excellent correlation with experimental measurements. In spite of the lack of impact ionization data for single-crystal diamond, approximation of avalanche coefficient parameters from other wide-bandgap semiconductors has also enabled the reverse blocking characteristics of diamond diodes to be simulated. Acceptable agreement with breakdown voltage from experimental devices made with presently available single-crystal CVD diamond is obtained.
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