| 1. |
- Aad, G, et al.
(författare)
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- 2015
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swepub:Mat__t
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| 2. |
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| 3. |
- Akiba, K., et al.
(författare)
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LHC forward physics
- 2016
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Ingår i: Journal of Physics G: Nuclear and Particle Physics. - : IOP Publishing. - 0954-3899 .- 1361-6471. ; 43:11
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Tidskriftsartikel (refereegranskat)
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| 4. |
- Balestra, F., et al.
(författare)
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NANOSIL network of excellence-silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
- 2008
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 11:5-6, s. 148-159
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Tidskriftsartikel (refereegranskat)abstract
- NANOSIL Network of Excellence [NANOSIL NoE web site < www.nanosil-noe.eu >], funded by the European Commission in the 7th Framework Programme (ICT-FP7, no 216171), aims at European scale integration of the excellent European research laboratories and their capabilities in order to strengthen scientific and technological excellence in the field of nanoelectronic materials and devices for terascale integrated circuits (ICs), and to disseminating the results in a wide scientific and industrial community. NANOSIL is exploring and assessing the science and technological aspects of nanodevices and operational regimes relevant to the n+4 technology node and beyond. It encompasses projects on nanoscale CMOS and beyond-CMOS. Innovative concepts, technologies and device architectures are proposed-with fabrication down to the finest features, and utilising a wide spectrum of advanced deposition and processing capabilities, extensive characterization and very rigorous device modeling. This work is carried out through a network of joint processing, characterization and modeling platforms. This critical interaction strengthens European integration in nanoelectronics and will speed up technological innovation for the nanoelectronics of the next two to three decades.
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| 5. |
- Baus, M., et al.
(författare)
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Device architectures based on graphene channels
- 2008
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Ingår i: 2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS. - NEW YORK : IEEE. ; , s. 269-272
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Konferensbidrag (refereegranskat)abstract
- Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
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| 6. |
- Baus, M, et al.
(författare)
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Fabrication of monolithic bidirectional switch devices
- 2004
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Ingår i: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 73-4, s. 463-467
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Tidskriftsartikel (refereegranskat)abstract
- The fabrication scheme of a novel MOS-based power device, a monolithic bidirectional switch (MBS), is presented. This concept allows the integration of a bidirectional switch with the advantages of low power consumption, small package size, and low fabrication costs. Furthermore, device simulations predict a performance benefit for power applications such as matrix converters. In an MBS, the field effect is used to control carrier concentrations in elevated structures made up of nearly intrinsic silicon. A CMOS-compatible nano-fabrication process for the MBS is proposed, employing local oxidation of silicon for self-aligned contact formation. First electrical results are presented. (C) 2004 Elsevier B.V. All rights reserved.
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| 7. |
- Baus, M., et al.
(författare)
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Fabrication of monolithic bidirectional switch (MBS) devices with MOS-controlled emitter structures
- 2006
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Ingår i: PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS. ; , s. 181-184
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Konferensbidrag (refereegranskat)abstract
- A novel high-voltage power device, the Monolithic Bidirectional Switch (MBS) is investigated in this work. Planar MBS devices have been fabricated by a self-aligned fabrication process using local oxidation of silicon technique and self-aligned sificidation. Results obtained from electrical characterization are compared with numerical simulations. Using highly transparent universal contacts, bidirectional switching with an excellent on/off current ratio is demonstrated. On-current densities of 75 A/cm(2) at V(on) = 3 V have been achieved even in an exploratory device structure. Simulations further demonstrate the high potential of the MBS for future power electronic systems such as the matrix converter.
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| 8. |
- Baus, M, et al.
(författare)
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Monolithic Bidirectional Switch (MBS) - A novel MOS-based power device
- 2005
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Ingår i: PROCEEDINGS OF ESSDERC 2005. - 0780392035 ; , s. 473-476
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Konferensbidrag (refereegranskat)abstract
- A novel MOS-based power device, the Monolithic Bidirectional Switch (MBS), is investigated in this work. An analytical model is used to explain basic device operating principles. A self-aligned fabrication process of lateral MBS devices with Schottky contacts and local oxidation of silicon technique (LOCOS) is described. Experimental results are compared with the analytical model to analyze the influence of device parasitics. Bidirectional switching and an on/off-current ratio of more than 100 is demonstrated for MBS devices for the first time.
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| 9. |
- Echtermeyer, T. J., et al.
(författare)
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Graphene field-effect devices
- 2007
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Ingår i: The European Physical Journal Special Topics. - : Springer Science and Business Media LLC. - 1951-6355 .- 1951-6401. ; 148:1, s. 19-26
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Tidskriftsartikel (refereegranskat)abstract
- In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices ( FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors ( MOSFETs).
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| 10. |
- Echtermeyer, Tim J., et al.
(författare)
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Nonvolatile switching in graphene field-effect devices
- 2008
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 29:8, s. 952-954
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Tidskriftsartikel (refereegranskat)abstract
- The absence of a band gap in graphene restricts its straightforward application as a channel material in field-effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field-effect devices (FEDs) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "ON-state" and an insulating "OFF-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to nonvolatile memories and novel neuromorphic processing concepts.
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| 11. |
- Heuser, M, et al.
(författare)
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Fabrication of wire-MOSFETs on silicon-on-insulator substrate
- 2002
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Ingår i: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 61-2, s. 613-618
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Tidskriftsartikel (refereegranskat)abstract
- This paper describes the simulation and fabrication of N-type wire-MOSFETs with a multigate structure fabricated on silicon-on-insulator (SOI) material. Both simulations as well as experiments show that short channel effects (SCE) can be reduced by decreasing the channel width of the transistors below 100 nm. The triple-sided gate generates principally higher potential barriers in the channel, suppressing punch through effects significantly. (C) 2002 Elsevier Science B.V. All rights reserved.
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| 12. |
- Lemme, Max C., 1970-, et al.
(författare)
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A graphene field-effect device
- 2007
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 28:4, s. 282-284
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.
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| 13. |
- Lemme, Max C., 1970-, et al.
(författare)
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Influence of channel width on n- and p-type nano-wire-MOSFETs on silicon on insulator substrate
- 2003
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Ingår i: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 67-8, s. 810-817
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Tidskriftsartikel (refereegranskat)abstract
- The fabrication and characterization of nanoscale n- and p-type multi-wire metal-oxide semiconductor field effect transistors (MOSFETs) with a triple gate structure on silicon-on-insulator material (SOI) is described in this paper. Experimental results are compared to simulation with special emphasis on the influence of channel width on the subthreshold behavior. Experiment and simulation show that the threshold voltage depends strongly on the wire width at dimensions below 100 urn. It is further shown that the transition from partial to full channel depletion is dependent on channel geometry. Finally, an increased on-current per chip area is demonstrated for triple-gate SOI MOSFETs compared to planar SOI devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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| 14. |
- Lemme, Max C., 1970-, et al.
(författare)
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Mobility in graphene double gate field effect transistors
- 2008
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Ingår i: Solid-State Electronics. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0038-1101 .- 1879-2405. ; 52:4, s. 514-518
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Tidskriftsartikel (refereegranskat)abstract
- In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double-gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra-thin body silicon-on-insulator MOSFETs cannot compete with graphene FET values. (c) 2007 Elsevier Ltd. All rights reserved.
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| 15. |
- Lemme, Max C., 1970-, et al.
(författare)
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Subthreshold behavior of triple-gate MOSFETs on SOI material
- 2004
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 48:4, s. 529-534
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Tidskriftsartikel (refereegranskat)abstract
- The fabrication of n-type multi-wire MOSFETs on SOI material with triple-gate structures is presented. The output and transfer characteristics of devices with a gate length of 70 nm and a MESA width of 22 nm demonstrate clearly the suppression of short channel effects (SCE). In addition, these triple-gate structures are compared with planar SOI devices of comparable dimensions. The influence of biasing the substrate (back gate) is analyzed and compared to simulation data.
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| 16. |
- Lemme, Max C., 1970-, et al.
(författare)
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Subthreshold characteristics of p-type triple-gate MOSFETs
- 2003
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Ingår i: ESSDERC 2003. - NEW YORK : IEEE. ; , s. 123-126
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Konferensbidrag (refereegranskat)abstract
- The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, output and transfer characteristics of 70nm printed gate length p-MOSFETs with 22nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.
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| 17. |
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