| 1. |
- Civrac, Gabriel, et al.
(författare)
-
600 V PiN diodes fabricated using on-axis 4H silicon carbide
- 2012
-
Ingår i: Materials Science Forum Vol 717 - 720. - : Trans Tech Publications Inc.. ; , s. 969-972
-
Konferensbidrag (refereegranskat)abstract
- This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have been performed in order to design their architecture. Some of these diodes have a breakdown voltage around 600 V. A comparison is made with similar diodes fabricated on off-cut grown layers. Computer simulations are used to explain lower breakdown voltages than those expected.
|
|
| 2. |
- Dheilly, Nicolas, et al.
(författare)
-
Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
- 2009
-
Ingår i: Silicon Carbide and Related Materials 2008. - : Trans Tech Publications Ltd. ; , s. 703-706
-
Konferensbidrag (refereegranskat)abstract
- This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.
|
|
| 3. |
- Peyre, Hervé, et al.
(författare)
-
Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications
- 2012
-
Ingår i: HeteroSiC & WASMPE 2011. ; , s. 164-168
-
Konferensbidrag (refereegranskat)abstract
- Focusing on the change in aluminium-related photoluminescence lines in 4H-SiC versus doping concentration, we have used a combination of LTPL (Low Temperature PhotoLuminescence) and secondary ion mass spectrometry measurements to set new calibration curves. In this way, one can probe the change in aluminum concentration in the range 1017 to 1019 cm-3. When applied to LTPL maps collected on full 3-inch wafers, we show that such abacuses constitute a powerful tool to control efficiently the doping level of as-grown p+ (emitters) and p++ (contact) layers for power device applications.
|
|
| 4. |
- Thierry-Jebali, Nicolas, et al.
(författare)
-
Electrical Characterization of PiN Diodes with p(+) layer Selectively Grown by VLS Transport
- 2013
-
Ingår i: Silicon Carbide and Related Materials 2012. - : Trans Tech Publications Inc.. ; , s. 911-914
-
Konferensbidrag (refereegranskat)abstract
- This paper deals with electrical characterization of PiN diodes fabricated on an 8 degrees off-axis 4H-SiC with a p(++) epitaxial area grown by Vapour-Liquid-Solid (VLS) transport. It provides for the first time evidence that a high quality p-n junction can be achieved by using this technique followed by a High Temperature Annealing (HTA) process.
|
|
