| 1. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Transient Spectroscopy of Optical Spin Injection in ZnMnSe/ZnCdSe Quantum Structures
- 2005
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Ingår i: Journal of Superconductivity. - Journal of Superconductivity and Novel Magnetism, vol. 18 : Springer. - 0896-1107 .- 1572-9605.
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Konferensbidrag (refereegranskat)abstract
- We show, by time-resolved magneto-photoluminescence (PL) spectroscopy in combination with selective laser excitation, that optical polarization of the ZnCdSe spin detector induced by spin injection from the ZnMnSe spin injector persists over a much longer time scale than the lifetime of the ZnMnSe excitons. This finding provides compelling experimental evidence that the dominant mechanism for the observed spin injection in the ZnMnSe/ZnCdSe structures should not be due to injection of the excitonic spins of the diluted magnetic semiconductor (DMS). It is rather due to e.g. a delayed spin injection arising from tunneling of individual carriers or/and trapped spins in ZnMnSe.
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| 2. |
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| 3. |
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| 4. |
- Toropov, A. A., et al.
(författare)
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Exciton magnetic polarons in a type II ZnMnSe/ZnSSe superlattice
- 2004
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Ingår i: Physica status solidi (c)Special Issue: 11th International Conference on II–VI Compounds (II–VI 2003)Volume 1, Issue 4. - physica status solidi (c), Vol. 1, Issue 4 : WileyVCH. ; , s. 847-850
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Konferensbidrag (refereegranskat)abstract
- We present a time-resolved experimental study of excitonic magnetic polaron (EMP) dynamics in type II quantum wells ZnMnSe/ZnSSe. Two photoluminescence peaks were observed, which reflects coexistence of localized excitons and EMPs in the same sample. This was possible due to the competition of two localization mechanisms - magnetic localization of heavy holes in the ZnMnSe layers and non-magnetic localization of electrons in the ZnSSe layers.
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| 5. |
- Toropov, A. A., et al.
(författare)
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InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
- 2004
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Ingår i: 11th International Conference on II-VI Compounds,2003. - : WileyVCH. ; , s. 704-
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Konferensbidrag (refereegranskat)abstract
- Zn(Mn)Te/Cd(Mn)Se quantum well heterostructures have been grown pseudomorphically on InAs(001) substrates using original InAs surface preparation techniques. The structures demonstrated bright PL in the 1-1.3 eV range and the effect of giant Zeeman splitting in the external magnetic field.
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| 6. |
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| 7. |
- Buyanova, Irina, 1960-, et al.
(författare)
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On the spin injection in ZnMnSe/ZnCdSe heterostructures
- 2002
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Konferensbidrag (refereegranskat)abstract
- We present results from a detailed study of spin injection in thin II-VI wide band gap semiconductor heterostructures by magnetooptical spectroscopy. It is shown that efficient spin alignment can be achieved in a diluted magnetic semiconductor barrier (a layer of ZnMnSe or ZnMnSe/CdSe superlattice) as thin as 10 nm. Rather efficient spin injection from such a thin spin aligner to a non-magnetic quantum well is demonstrated, even when the tunneling energy barrier is as thick as 10 nm. The effect of spin relaxation process on spin injection is also closely examined.
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| 8. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:12, s. 2196-
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Tidskriftsartikel (refereegranskat)abstract
- Magneto-optical spectroscopy in combination with tunable laser excitation is employed to study exciton spin alignment and injection in ZnMnSe/ZnCdSe quantum structures. This approach enables us to selectively create preferred spin orientation and to separately monitor subsequent spin injection from individual spin states, thus shedding light on a possible source of spin loss. It is shown that the limited spin polarization in a nonmagnetic quantum well due to spin injection from a ZnMnSe-based diluted magnetic semiconductor (DMS) is not caused by a limited degree of spin alignment in the DMS, which is in fact complete, but rather occurs during subsequent processes.
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| 9. |
- Chen, Weimin, 1959-, et al.
(författare)
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Efficient spin depolarization in ZnCdSe spin detector : an important factor limiting optical spin injection efficiency in ZnMnSe/CdZnSe spin light-emitting structures
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85, s. 5260-
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Tidskriftsartikel (refereegranskat)abstract
- Spin depolarization of a ZnCdSe quantum-well spin detector (SD) in ZnMnSe/ZnCdSe light-emitting quantum structures is investigated by cw and time-resolved optical orientation spectroscopy. It is shown that spin depolarization is governed by three distinct spin relaxation processes with the corresponding polarization decay times of 850, 30, and <10 ps. The dominant and the fastest process is attributed to spin relaxation accompanying energy relaxation of hot excitons (and hot carriers) within the SD, providing evidence that it can be an important source of spin loss, leading to the observed limited efficiency of optical spin injection in the structures.
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| 10. |
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| 11. |
- Kayanuma, K., et al.
(författare)
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Optical study of spin injection dynamics in double quantum wells of II-VI diluted magnetic semiconductors
- 2005
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Ingår i: AIP Conf. Proc. 772. - : American Institute of Physics (AIP). ; , s. 1387-1388
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- The spin injection process is studied in double quantum wells ofZnMnSe and ZnCdSe with a tunneling barrier by circularly-polarized transientphotoluminescence spectroscopy. The result shows two types of spin injectionsin the time ranges of 30 and 1000 ps. Theobserved spin injection processes are quantitatively interpreted by the individualtunneling of electrons and holes based on the rate equationanalysis. ©2005 American Institute of Physics
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| 12. |
- Koyama, T., et al.
(författare)
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Spin dynamics of type-II excitons in diluted magnetic double quantum wells
- 2007
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Ingår i: 28th Int. Conf. on the Physics of Semiconductors,2006. - : American Institute of Physics (AIP). ; , s. 465-
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Dynamical properties of the electron and hole spins are demonstrated indouble quantum wells composed of diluted magnetic and nonmagnetic semiconductors.Excitonic photoluminescence of the type-II transition appears for the lower-lyingdown-spin level of the exciton in magnetic field. A type-Iexciton transition is also observed for the opposite up-spin excitonstate. The result shows the spatial spin separation and thespin-injection dynamics for the heavy-hole spin states in the doublequantum wells. ©2007 American Institute of Physics
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| 13. |
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| 14. |
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| 15. |
- Rudko, G.Yu, et al.
(författare)
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Optically detected magnetic resonance study of relaxation/emission processes in the nanoparticle-polymer composite
- 2019
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Ingår i: SPQEO. - Kiev, Ukraine : Natsional'na Akademiya Nauk Ukrainy * Instytut Fizyky Napivprovidnykiv. - 1605-6582. ; 22:3, s. 310-318
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Tidskriftsartikel (refereegranskat)abstract
- Two nanocomposites containing CdS nanoparticles in polymeric matrices were studied using the photoluminescence (PL) and optically detected magnetic resonance (ODMR) methods. Due to equal sizes of NPs in the composites (~5 nm) but different matrices – the oxygen-containing polymer PVA (polyvinyl alcohol) and oxygen-free polymer PEI (polyethyleneimine) – differences of nanocomposites properties are predominantly caused by different interfacial conditions. ODMR spectra have revealed five types of centers related to the PL emission – four centers involved in radiative recombination and one center related to non-radiative recombination processes. The oxygen-related interfacial center in CdS/PVA (LK1-center) and sulfur vacancy center in CdS/PEI (Vs-center) were identified.
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| 16. |
- Terentev, Ya. V., et al.
(författare)
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Semimagnetic ZnMnSe/CdSe Fractional Monolayer Superlattice as an Injector of Spin-Polarized Carriers
- 2002
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Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 229:2, s. 765-768
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Tidskriftsartikel (refereegranskat)abstract
- We report on effective injection of spin-oriented carriers from a semimagnetic semiconductor structure to a non-magnetic ZnCdSe/ZnSe quantum well (QW). A short-period ZnMnSe/CdSe fractional monolayer superlattice was used as a spin injector. The carriers are photo-generated in the semimagnetic region, spin-polarized via the effect of giant Zeeman splitting and then injected into the non-magnetic QW. The spin injection efficiency was estimated by circular polarization measurements of recombination emission from the QW. The maximal detected degree of the spin polarization is about 25%.
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| 17. |
- Toropov, A.A., et al.
(författare)
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Density-dependent dynamics of exciton magnetic polarons in ZnMnSe/ZnSSe type-II quantum wells
- 2006
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : APS. - 1098-0121 .- 1550-235X. ; 73:24, s. 245335-
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Tidskriftsartikel (refereegranskat)abstract
- We report on time-resolved photoluminescence studies of exciton dynamics in a ZnMnSe/ZnSSe type-II quantum well. Strong separation of the electrons, confined to the nonmagnetic semiconductor ZnSSe, and holes, confined to the diluted magnetic semiconductor ZnMnSe, results in an exciton lifetime exceeding 3 ns. Two excitonic emission lines are observed in this structure at low temperatures. The lower-energy line was associated with the formation of an exciton magnetic polaron (EMP), whereas the higher-energy line was attributed to the emission of nonmagnetically localized excitons. The intensity of the EMP line was found to saturate at a relatively low density of photoexcited carriers well below the exciton Mott density. This behavior evidences a limited density of sites where the hole localization radius is small enough to ensure the fast formation of EMP's with a noticeable binding energy. © 2006 The American Physical Society.
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| 18. |
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| 19. |
- Toropov, A. A., et al.
(författare)
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ZnMnSe/ZnSSe Type-II semimagnetic superlattices : Growth and magnetoluminescence properties
- 2002
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 36:11, s. 1288-1293
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Tidskriftsartikel (refereegranskat)abstract
- A ZnSSe/ZnMnSe type-II semimagnetic superlattice was pseudomorphically grown via molecular beam epitaxy on a GaAs substrate. The superlattice-layer thicknesses and compositions were chosen so that compressive strains in the ZnMnSe layer compensated tensile strains in the ZnSSe layer. The photoluminescence spectra in an external magnetic field demonstrate the effect of giant Zeeman splitting of an exciton. Simulation of the luminescence-line shift in a magnetic field allowed us to determine more accurately the band offsets at the ZnSSe/ZnMnSe interface.
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| 20. |
- Zhang, Pimin, 1990-, et al.
(författare)
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Effects of surface finish on the initial oxidation of HVAF-sprayed NiCoCrAlY coatings
- 2019
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Ingår i: Surface & Coatings Technology. - Elsevier : Elsevier BV. - 0257-8972 .- 1879-3347. ; 364, s. 43-56
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Tidskriftsartikel (refereegranskat)abstract
- Oxide scale formed on HVAF-sprayed NiCoCrAlY coatings and the effect of surface treatment were investigated by a multi-approach study combining photo-stimulated luminescence, microstructural observation and mass gain. The initial oxidationbehaviour of as-sprayed, polished and shot-peened coatings at 1000 °C is studied. Both polished and shot-peened coatings exhibited superior performance due to rapid formation of α-Al2O3 fully covering the coating and suppressing the growth of transient alumina, assisted by a high density of α-Al2O3 nuclei on surface treatment induced defects. Moreover, the fast development of a two-layer alumina scale consisting of an inward-grown inner α-Al2O3 layer and an outer layer transformed from outward-grown transient alumina resulted in a higher oxide growth rate of the as-sprayed coating.
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| 21. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Control of spin functionality in ZnMnSe-based structures : Spin switching versus spin alignment
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:11, s. 1700-
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Tidskriftsartikel (refereegranskat)abstract
- The ability of attaining desired spin functionality by adjusting structural design is demonstrated in diluted magnetic semiconductor (DMS) quantum structures based on II-VI semiconductors. The following spin enabling functions are achieved by tuning the ratio between the rates of exciton spin relaxation within the DMS and exciton escape from it to an adjacent nonmagnetic spin detector. Spin switching is realized when using a thin layer of Zn0.95Mn0.05Se as a spin manipulator and is attributed to a fast exciton escape from the DMS preceding the spin relaxation. Spin alignment is accomplished in tunneling structures where the presence of an energy barrier inserted between a spin manipulator (a DMS-based superlattice) and a spin detector ensures a slow escape rate from the DMS layer.
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| 22. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides
- 2004
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 70:24, s. 245215-245219
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Tidskriftsartikel (refereegranskat)abstract
- Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excitation spectroscopy, postgrowth hydrogenation is shown to reopen the band gap of the GaNP alloys and to efficiently reduce the N-induced coupling between the conduction band states. By Raman spectroscopy, these effects are shown to be accompanied by hydrogen-induced breaking of the Ga-P bond in the alloy, evident from disappearance of the corresponding vibrational mode. According to the performed Raman and x-ray diffraction measurements, the hydrogenation is also found to cause a strong expansion of the GaNP lattice, which changes the sign of strain from tensile in the as-grown GaNP epilayers to compressive in the posthydrogenated structures, due to the formation of complexes between N and H.
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| 23. |
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| 24. |
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| 25. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Exciton Spin Manipulation in ZnMnSe-Based Structures
- 2003
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Konferensbidrag (refereegranskat)abstract
- Strong effect of structural design on spin functionality is observed in quantum structures based on II-VI semiconductors. Spin switching is realized when using a thin layer of Zn0.95Mn0.05Se diluted magnetic semiconductor (DMS) as a spin manipulator. This is evident from the polarization of photoluminescence related to a spin detector (an adjacent nonmagnetic quantum well (QW)) measured under the resonant excitation of the spin-up and spin-down states of the DMS, which is identical in value but opposite in sign. The achieved spin switching is suggested to reflect fast carrier diffusion from the DMS due to the absence of an energy barrier between the upper spin state of the DMS layer and the QW. On the other hand, the spin alignment is accomplished in the tunneling structures where the presence of the energy barrier inserted between a spin manipulator (i.e., a ZnMnSe/CdSe DMS superlattice) and a spin detector ensures a slow escape rate from the DMS layer.
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