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1.
  • Coletti, C., et al. (författare)
  • Large area quasi-free standing monolayer graphene on 3C-SiC(111)
  • 2011
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 99:8
  • Tidskriftsartikel (refereegranskat)abstract
    • Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]
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2.
  • Coletti, C., et al. (författare)
  • Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
  • 2013
  • Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 88:15
  • Tidskriftsartikel (refereegranskat)abstract
    • In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on alpha-SiC(0001) and beta-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
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