| 1. |
- Murin, Yu., et al.
(författare)
-
A detector system for studying nuclear reactions relevant to Single Event Effects
- 2007
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : Elsevier BV. - 0168-9002 .- 1872-9576 .- 0167-5087. ; 578:2, s. 385-398
-
Tidskriftsartikel (refereegranskat)abstract
- We describe a device to study reactions relevant for the Single Event Effect (SEE) in microelectronics by means of 200A and 300AMeV, inverse kinematics, Si + H and Si + D reactions. The work is focused on the possibility to measure Z = 2-14 projectile fragments as efficiently as possible. During commissioning and first experiments the fourth quadrant of the CELSIUS storage ring acted as a spectrometer to register fragments in two planes of Si strip detectors in the angular region 0 degrees-0.6 degrees. A combination of ring-structured and sector-structured Si strip detector planes operated at angles 0.6 degrees-1.1 degrees. For specific event tagging a Si+ phoswich scintillator wall operated in the range 3.9 degrees-11.7 degrees and Si Delta E-E telescopes of CHICSi type operated at large angles.
|
|
| 2. |
- Ahvenniemi, Esko, et al.
(författare)
-
Recommended reading list of early publications on atomic layer deposition-Outcome of the "Virtual Project on the History of ALD"
- 2017
-
Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 35:1
-
Forskningsöversikt (refereegranskat)abstract
- Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.
|
|
| 3. |
|
|
| 4. |
|
|
| 5. |
- Jaderstrom, H., et al.
(författare)
-
200 and 300 MeV/nucleon nuclear reactions responsible for single-event effects in microelectronics
- 2008
-
Ingår i: Physical Review C. Nuclear Physics. - 0556-2813 .- 1089-490X. ; 77:4, s. 44601-
-
Tidskriftsartikel (refereegranskat)abstract
- An experimental study of nuclear reactions between Si-28 nuclei at 200 and 300 MeV/nucleon and hydrogen or deuterium target nuclei was performed at the CELSIUS storage ring in Uppsala, Sweden, to collect information about the reactions responsible for single-event effects in microelectronics. Inclusive data on Si-28 fragmentation, as well as data on correlations between recoils and spectator protons or alpha particles are compared to predictions from the Dubna cascade model and the Japan Atomic Energy Research Institute version of the quantum molecular dynamics model. The comparison shows satisfactory agreement for inclusive data except for He fragments where low-energy sub-barrier fragments and recoiling fragments with very large momenta are produced much more frequently than predicted. The yield of exclusive data are also severely underestimated by the models whereas the charge distributions of recoils in these correlations compare well. The observed enhancement in He emission, which may well be important for the description of single-event effects, is most likely to be attributed to alpha clustering in Si-28 nuclei.
|
|
| 6. |
- Murin, Y, et al.
(författare)
-
SEE-Related Studies at CELSIUS
- 2005
-
Ingår i: Proc. 6th Int. Conf. on Nuclear Physics at Storage Rings (STORI’05), Bonn. ; , s. 153-
-
Konferensbidrag (refereegranskat)
|
|
| 7. |
|
|
| 8. |
- Chubarov, M., et al.
(författare)
-
Boron nitride: A new photonic material
- 2014
-
Ingår i: Physica. B, Condensed matter. - : Elsevier. - 0921-4526 .- 1873-2135. ; 439, s. 29-34
-
Tidskriftsartikel (refereegranskat)abstract
- Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp(2)-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.
|
|
| 9. |
- Chubarov, M., et al.
(författare)
-
Characterization of Boron Nitride Thin Films
- 2013
-
Konferensbidrag (refereegranskat)abstract
- Rhombohedral Boron Nitride layers were grown on sapphire substrate in a hot-wall CVD reactor. The characterization of those layers is reported and the results are discussed in correlation with the various growth parameters used.
|
|
| 10. |
- Chubarov, M., et al.
(författare)
-
Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates
- 2014
-
Ingår i: CrystEngComm. - : Royal Society of Chemistry. - 1466-8033. ; 16:24, s. 5430-5436
-
Tidskriftsartikel (refereegranskat)abstract
- Epitaxial growth of rhombohedral boron nitride (r-BN) on different polytypes of silicon carbide (SiC) is demonstrated using thermally activated hot-wall chemical vapour deposition and triethyl boron and ammonia as precursors. With respect to the crystalline quality of the r-BN films, we investigate the influence of the deposition temperature, the precursor ratio (N/B) and the addition of a minute amount of silicon to the gas mixture. From X-ray diffraction and transmission electron microscopy, we find that the optimal growth temperature for epitaxial r-BN on the Si-face of the SiC substrates is 1500 degrees C at a N/B ratio of 642 and silicon needs to be present not only in the gas mixture during deposition but also on the substrate surface. Such conditions result in the growth of films with a c-axis identical to that of the bulk material and a thickness of 200 nm, which is promising for the development of BN films for electronic applications.
|
|
| 11. |
|
|
