| 1. |
- Ghai, Viney, 1989, et al.
(författare)
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Achieving Long-Range Arbitrary Uniform Alignment of Nanostructures in Magnetic Fields
- 2024
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Ingår i: Advanced Functional Materials. - 1616-3028 .- 1616-301X. ; In Press
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Tidskriftsartikel (refereegranskat)abstract
- For magnetic field orientation of nonstructures to become a viable method to create high performance multifunctional nanocomposites, it is of paramount importance to develop a method that is easy to implement and that can induce long-range uniform nanostructural alignment. To overcome this challenge, inspired by low field nuclear magnetic resonance (NMR) technology, a highly uniform, high field strength, and compact magnetic-field nanostructure orientation methodology is presented for polymeric nanocomposites using a Halbach array, for the first time. Potential new advances are showcased for applications of graphene polymer composites by considering their electro-thermal and antibacterial properties in highly oriented orthogonal morphologies. The high level of anisotropy induced in the graphene nanocomposites studied stands out through: 1) up to four decades higher electrical conductivities recorded in comparison to their randomly oriented counterparts, at concentrations where the latter show minimal improvements compared to the unfilled polymer; 2) over 1200% improvement in thermal conductivity, 3) antibacterial surfaces at field benchmark levels with lower filler content and with the added versatility of arbitrary orientation of the nanofillers. Overall, the new method and variations thereof can open up new horizons for tailoring nanostructure and performance for virtually all major nanocomposite applications based on graphene and other types of fillers.
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| 2. |
- Ngaloy, Roselle, 1994, et al.
(författare)
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Strong In-Plane Magnetization and Spin Polarization in (Co 0.15 Fe 0.85 ) 5 GeTe 2 /Graphene van der Waals Heterostructure Spin-Valve at Room Temperature
- 2023
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Ingår i: ACS Nano. - 1936-086X .- 1936-0851. ; In Press
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Tidskriftsartikel (refereegranskat)abstract
- Van der Waals (vdW) magnets are promising, because of their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, so far, most of the vdW magnet-based spintronic devices have been limited to cryogenic temperatures with magnetic anisotropies favoring out-of-plane or canted orientation of the magnetization. Here, we report beyond room-temperature lateral spin-valve devices with strong in-plane magnetization and spin polarization of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Density functional theory (DFT) calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Magnetization measurements reveal the above room-temperature ferromagnetism in CFGT and clear remanence at room temperature. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices, such as efficient spin injection and detection. Further analysis of spin transport and Hanle spin precession measurements reveals a strong in-plane magnetization with negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus revealing its potential application in spintronic technologies.
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| 3. |
- Zhao, Bing, 1990, et al.
(författare)
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A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe 5 GeTe 2 /Graphene Heterostructure
- 2023
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 35:16
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Tidskriftsartikel (refereegranskat)abstract
- The discovery of van der Waals (vdW) magnets opened a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW ferromagnets are limited to cryogenic temperatures, inhibiting their broader practical applications. Here, the robust room-temperature operation of lateral spin-valve devices using the vdW itinerant ferromagnet Fe5GeTe2 in heterostructures with graphene is demonstrated. The room-temperature spintronic properties of Fe5GeTe2 are measured at the interface with graphene with a negative spin polarization. Lateral spin-valve and spin-precession measurements provide unique insights by probing the Fe5GeTe2/graphene interface spintronic properties via spin-dynamics measurements, revealing multidirectional spin polarization. Density functional theory calculations in conjunction with Monte Carlo simulations reveal significantly canted Fe magnetic moments in Fe5GeTe2 along with the presence of negative spin polarization at the Fe5GeTe2/graphene interface. These findings open opportunities for vdW interface design and applications of vdW-magnet-based spintronic devices at ambient temperatures.
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| 4. |
- Bainsla, Lakhan, 1985, et al.
(författare)
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Large out-of-plane spin-orbit torque in topological Weyl semimetal TaIrTe 4
- 2024
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Ingår i: Nature Communications. - 2041-1723 .- 2041-1723. ; 15:1, s. 4649-
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Tidskriftsartikel (refereegranskat)abstract
- The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque (SOT) materials provide only an in-plane spin-polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin-polarized current components, which are not suitable for energy-efficient SOT applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using the topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-torque ferromagnetic resonance (STFMR) and second harmonic Hall measurements on devices based on TaIrTe4/Ni80Fe20 heterostructures and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be (4.05 ± 0.23)×104 (ℏ ⁄ 2e) (Ωm)-1, which is an order of magnitude higher than the reported values in other materials.
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| 5. |
- Bainsla, Lakhan, et al.
(författare)
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Spin-orbit torques in Co2MnGa magnetic Weyl semimetal thin films
- 2023
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Ingår i: 2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings. - 9798350338362
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Konferensbidrag (refereegranskat)abstract
- Due to the nontrivial topology in their electronic band structure, topological quantum materials are known to exhibit unconventional surface states and anomalous transport properties. In the present study, the ferromagnetic Heusler alloy Co2MnGa, which breaks time-reversal symmetry, is studied to estimate its spin-orbit torque efficiency. Epitaxial thin films with high structural ordering are obtained, which show very high values of anomalous Hall conductivity. A spin-orbit torque efficiency of 0.13±0.01 is obtained in a 20 nm Co2MnGa film. The present results open the possibility to use these exotic materials in spintronic devices and beyond.
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| 6. |
- Bhardwaj, Vishal, et al.
(författare)
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Observation of surface dominated topological transport in strained semimetallic ErPdBi thin films
- 2020
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 117:13
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Tidskriftsartikel (refereegranskat)abstract
- In this Letter, we present experimental observation of surface-dominated transport properties in [110]-oriented strained (∼1.6%) ErPdBi thin films. The resistivity data show typical semi-metallic behavior in the temperature range of 3 K ≤ T ≤ 350 K with a transition from semiconductor- to metal-like behavior below 3 K. The metallic behavior at low temperature disappears entirely in the presence of an external magnetic field >1 T. The weak-antilocalization (WAL) effect is observed in magneto-conductance data in the low magnetic field region and follows the Hikami-Larkin-Nagaoka (HLN) model. HLN fitting estimated single coherent channel, i.e., α ∼-0.51 at 1.9 K, and the phase coherence length (Lφ) shows the Lφ ∼T-0.52 power law dependence on temperature in the range of 1.9 K-10 K, indicating the observation of 2D WAL. Shubnikov-de Haas (SdH) oscillations are observed in magneto-resistance data below 10 K and are fitted to standard Lifhsitz Kosevich theory. Fitting reveals the effective mass of charge carriers ∼0.15 me and a finite Berry phase of 0.86π± 0.16. The sheet carrier concentration and mobility of carriers estimated using SdH data are ns ∼1.35 × 1012 cm-2 and μs = 1210 cm2 V-1 s-1, respectively, and match well with the data measured using the Hall measurement at 1.9 K to be n ∼1.22 × 1012 cm-2, μ = 1035 cm2 V-1 s-1. These findings indicate the non-trivial nature and surface-dominated transport properties of strained (110) ErPdBi thin films at low temperatures.
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| 7. |
- Bing, Zhao, 1990, et al.
(författare)
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Unconventional Charge–Spin Conversion in Weyl-Semimetal WTe2
- 2020
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 32:38
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Tidskriftsartikel (refereegranskat)abstract
- An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, a charge-current-induced spin polarization in the type-II Weyl semimetal candidate WTe2 and efficient spin injection and detection in a graphene channel up to room temperature are reported. Contrary to the conventional spin Hall and Rashba–Edelstein effects, the measurements indicate an unconventional charge-to-spin conversion in WTe2, which is primarily forbidden by the crystal symmetry of the system. Such a large spin polarization can be possible in WTe2 due to a reduced crystal symmetry combined with its large spin Berry curvature, spin–orbit interaction with a novel spin-texture of the Fermi states. A robust and practical method is demonstrated for electrical creation and detection of such a spin polarization using both charge-to-spin conversion and its inverse phenomenon and utilized it for efficient spin injection and detection in the graphene channel up to room temperature. These findings open opportunities for utilizing topological Weyl materials as nonmagnetic spin sources in all-electrical van der Waals spintronic circuits and for low-power and high-performance nonvolatile spintronic technologies.
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| 8. |
- Chahal, Sumit, et al.
(författare)
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Microwave Synthesized 2D Gold and Its 2D-2D Hybrids
- 2022
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Ingår i: Journal of Physical Chemistry Letters. - : American Chemical Society (ACS). - 1948-7185. ; 13:28, s. 6487-6495
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Tidskriftsartikel (refereegranskat)abstract
- Xenes, i.e., monoelemental two-dimensional atomic sheets, are promising for sensitive and ultrafast sensor applications owing to exceptional carrier mobility; however, most of them oxidize below 500 °C and therefore cannot be employed for high-temperature applications. 2D gold, an oxidation-resistant plasmonic Xene, is extremely promising. 2D gold was experimentally realized by both atomic layer deposition and chemical synthesis using sodium citrate. However, it is imperative to develop a new facile single-step method to synthesize 2D gold. Here, liquid-phase synthesis of 2D gold is demonstrated by microwave exposure to auric chloride dispersed in dimethylformamide. Microscopies (AFM and high-resolution TEM), spectroscopies (Raman, UV-vis, and X-ray photoelectron), and X-ray diffraction establish the formation of a hexagonal crystallographic phase for 2D gold. 2D-2D hybrids of 2D gold have also been synthesized and investigated for electronic/optoelectronic behaviors and SERS-based molecular sensing. DFT band structure calculation for 2D gold and its hybrids corroborates the experimental findings.
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| 9. |
- Chakraborty, Suman Kumar, et al.
(författare)
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Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices
- 2022
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Ingår i: iScience. - : Elsevier BV. - 2589-0042. ; 25:3
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Forskningsöversikt (refereegranskat)abstract
- Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and their heterojunctions are prospective materials for future electronics, optoelectronics, and quantum technologies. Assembling different 2D layers offers unique ways to control optical, electrical, thermal, magnetic, and topological phenomena. Controlled fabrications of electronic grade 2D heterojunctions are of paramount importance. Here, we enlist novel and scalable strategies to fabricate 2D vertical and lateral heterojunctions, consisting of semiconductors, metals, and/or semimetals. Critical issues that need to be addressed are the device-to-device variations, reliability, stability, and performances of 2D heterostructures in electronic and optoelectronic applications. Also, stacking order-dependent formation of moiré excitons in 2D heterostructures are emerging with exotic physics and new opportunities. Furthermore, the realization of 2D heterojunction-based novel devices, including excitonic and valleytronic transistors, demands more extensive research efforts for real-world applications. We also outline emergent phenomena in 2D heterojunctions central to nanoelectronics, optoelectronics, spintronics, and energy applications.
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| 10. |
- Dankert, André, 1986, et al.
(författare)
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Efficient Spin Injection into Silicon and the Role of the Schottky Barrier
- 2013
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 3
-
Tidskriftsartikel (refereegranskat)abstract
- Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type and 10% in p-type degenerate Si bands, using a narrow Schottky and a SiO2 tunnel barrier in a direct tunneling regime. Furthermore, by increasing the width of the Schottky barrier in non-degenerate p-type Si, we observed a systematic sign reversal of the Hanle signal in the low bias regime. This dramatic change in the spin injection and detection processes with increased Schottky barrier resistance may be due to a decoupling of the spins in the interface states from the bulk band of Si, yielding a transition from a direct to a localized state assisted tunneling. Our study provides a deeper insight into the spin transport phenomenon, which should be considered for electrical spin injection into any semiconductor.
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| 11. |
- Dankert, André, 1986, et al.
(författare)
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Electrical gate control of spin current in van der Waals heterostructures at room temperature
- 2017
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 8
-
Tidskriftsartikel (refereegranskat)abstract
- Two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS2). Here we combine graphene and MoS2 in a van der Waals heterostructure (vdWh) to demonstrate the electric gate control of the spin current and spin lifetime at room temperature. By performing non-local spin valve and Hanle measurements, we unambiguously prove the gate tunability of the spin current and spin lifetime in graphene/MoS2 vdWhs at 300 K. This unprecedented control over the spin parameters by orders of magnitude stems from the gate tuning of the Schottky barrier at the MoS2/graphene interface and MoS2 channel conductivity leading to spin dephasing in high-SOC material. Our findings demonstrate an all-electrical spintronic device at room temperature with the creation, transport and control of the spin in 2D materials heterostructures, which can be key building blocks in future device architectures.
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| 12. |
- Dankert, André, 1986, et al.
(författare)
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Hall sensors batch-fabricated on all-CVD h-BN/graphene/h-BN heterostructures
- 2017
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- The two-dimensional (2D) material graphene is highly promising for Hall sensors due to its potential of having high charge carrier mobility and low carrier concentration at room temperature. Here, we report the scalable batch-fabrication of magnetic Hall sensors on graphene encapsulated in hexagonal boron nitride (h-BN) using commercially available large area CVD grown materials. The all-CVD grown h-BN/graphene/h-BN van der Waals heterostructures were prepared by layer transfer technique and Hall sensors were batch-fabricated with 1D edge metal contacts. The current-related Hall sensitivities up to 97 V/AT are measured at room temperature. The Hall sensors showed robust performance over the wafer scale with stable characteristics over six months in ambient environment. This work opens avenues for further development of growth and fabrication technologies of all-CVD 2D material heterostructures and allows further improvements in Hall sensor performance for practical applications.
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| 13. |
- Dankert, André, 1986, et al.
(författare)
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High Performance Molybdenum Disulfide Field Effect Transistors with Spin Tunnel Contacts
- 2014
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Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 8:1, s. 476-482
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Tidskriftsartikel (refereegranskat)abstract
- Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nanoelectronic, optoelectronic, and spintronic applications. Here, we investigate the field-effect transistor behavior of MoS2 with ferromagnetic contacts to explore its potential for spintronics. In such devices, we elucidate that the presence of a large Schottky barrier resistance at the MoS2/ferromagnet interface is a major obstacle for the electrical spin injection and detection. We circumvent this problem by a reduction in the Schottky barrier height with the introduction of a thin TiO2 tunnel barrier between the ferromagnet and MoS 2. This results in an enhancement of the transistor on-state current by 2 orders of magnitude and an increment in the field-effect mobility by a factor of 6. Our magnetoresistance calculation reveals that such integration of ferromagnetic tunnel contacts opens up the possibilities for MoS 2-based spintronic devices.
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| 14. |
- Dankert, André, 1986, et al.
(författare)
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Origin and evolution of surface spin current in topological insulators
- 2018
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Ingår i: Physical Review B. - 2469-9969 .- 2469-9950. ; 97:12
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Tidskriftsartikel (refereegranskat)abstract
- The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is crucial to maximize the charge-to-spin conversion efficiency. We observe an enhancement of the spin signal due to surface-dominated spin polarization while freezin g out the bulk conductivity in semiconducting Bi1.5Sb0.5Te1.7Se1.3 below 100K. Detailed measurements up to room temperature exhibit a strong reduction of the magnetoresistance signal between 2and100K, which we attribute to the thermal excitation of bulk carriers and to the electron-phonon coupling in the surface states. The presence and dominance of this effect up to room temperature is promising for spintronic science and technology.
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| 15. |
- Dankert, André, 1986, et al.
(författare)
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Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators
- 2015
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 15:12, s. 7976-7981
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Tidskriftsartikel (refereegranskat)abstract
- Topological insulators (TIs) are a new class of quantum materials that exhibit a current-induced spin polarization due to spin-momentum locking of massless Dirac Fermions in their surface states. This helical spin polarization in three-dimensional (3D) TIs has been observed using photoemission spectroscopy up to room temperatures. Recently, spin polarized surface currents in 3D TIs were detected electrically by potentiometric measurements using ferromagnetic detector contacts. However, these electric measurements are so far limited to cryogenic temperatures. Here we report the room temperature electrical detection of the spin polarization on the surface of Bi2Se3 by employing spin sensitive ferromagnetic tunnel contacts. The current-induced spin polarization on the Bi2Se3 surface is probed by measuring the magnetoresistance while switching the magnetization direction of the ferromagnetic detector. A spin resistance of up to 70 mΩ is measured at room temperature, which increases linearly with current bias, reverses sign with current direction, and decreases with higher TI thickness. The magnitude of the spin signal, its sign, and control experiments, using different measurement geometries and interface conditions, rule out other known physical effects. These findings provide further information about the electrical detection of current-induced spin polarizations in 3D TIs at ambient temperatures and could lead to innovative spin-based technologies.
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| 16. |
- Dankert, André, 1986, et al.
(författare)
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Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
- 2017
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Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 11:6, s. 6389-6395
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Tidskriftsartikel (refereegranskat)abstract
- The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.
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| 17. |
- Dankert, André, 1986, et al.
(författare)
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Spin transport and precession in graphene measured by nonlocal and three-terminal methods
- 2014
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 104:19, s. 192403 -
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and three-terminal measurement geometries. Identical spin lifetimes, spin diffusion lengths, and spin polarizations are observed in graphene devices for both techniques over a wide range of temperatures. The magnitude of the spin signals is well explained by spin transport models. These observations rules out any signal enhancements or additional scattering mechanisms at the interfaces for both geometries. This validates the applicability of both the measurement methods for graphene based spintronics devices and their reliable extractions of spin parameters.
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| 18. |
- Dankert, André, 1986, et al.
(författare)
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Thermal creation of electron spin polarization in n-type silicon
- 2013
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 103:24, s. article nr. 242405-
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Tidskriftsartikel (refereegranskat)abstract
- Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here, we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient across a ferromagnetic tunnel contact. The substrate heating experiments induce a large spin signal of 95 μV, corresponding to 0.54 meV spin-splitting in the conduction band of n-type silicon by Seebeck spin tunneling mechanism. The thermal origin of the spin injection has been confirmed by the quadratic scaling of the spin signal with the Joule heating current and linear dependence with the heating power.
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| 19. |
- Dankert, André, 1986, et al.
(författare)
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Tunnel Magnetoresistance with Atomically Thin Two‐Dimensional Hexagonal Boron Nitride Barriers
- 2015
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Ingår i: Nano Research. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 8:4, s. 1357-1364
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Tidskriftsartikel (refereegranskat)abstract
- The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap, along with its atomically flat nature without dangling bonds or interface trap states, makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated on a chip scale, we show tunnel magnetoresistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2D monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects.
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| 20. |
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| 21. |
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| 22. |
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| 23. |
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| 24. |
- Dash, Saroj Prasad, 1975, et al.
(författare)
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Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature
- 2014
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 104:21
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Tidskriftsartikel (refereegranskat)abstract
- We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO3. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO3 which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics.
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| 25. |
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