| 1. |
- Forsberg, U., et al.
(författare)
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Recoil-α-fission and recoil-α-α-fission events observed in the reaction 48Ca + 243Am
- 2016
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Ingår i: Nuclear Physics, Section A. - : Elsevier BV. - 0375-9474. ; 953, s. 117-138
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Tidskriftsartikel (refereegranskat)abstract
- Products of the fusion-evaporation reaction 48Ca + 243Am were studied with the TASISpec set-up at the gas-filled separator TASCA at the GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt, Germany. Amongst the detected thirty correlated α-decay chains associated with the production of element Z=115, two recoil-α-fission and five recoil-α-α-fission events were observed. The latter five chains are similar to four such events reported from experiments performed at the Dubna gas-filled separator, and three such events reported from an experiment at the Berkeley gas-filled separator. The four chains observed at the Dubna gas-filled separator were assigned to start from the 2n-evaporation channel 289115 due to the fact that these recoil-α-α-fission events were observed only at low excitation energies. Contrary to this interpretation, we suggest that some of these recoil-α-α-fission decay chains, as well as some of the recoil-α-α-fission and recoil-α-fission decay chains reported from Berkeley and in this article, start from the 3n-evaporation channel 288115.
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| 2. |
- Dobaczewski, J., et al.
(författare)
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Solution of universal nonrelativistic nuclear DFT equations in the Cartesian deformed harmonic-oscillator basis. (IX) HFODD (v3.06h) : A new version of the program
- 2021
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Ingår i: Journal of Physics G: Nuclear and Particle Physics. - : IOP Publishing. - 0954-3899 .- 1361-6471. ; 48:10
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Tidskriftsartikel (refereegranskat)abstract
- We describe the new version (v3.06h) of the code HFODD that solves the universal nonrelativistic nuclear DFT Hartree-Fock or Hartree-Fock-Bogolyubov problem by using the Cartesian deformed harmonic-oscillator basis. In the new version, we implemented the following new features: (i) zero-range three- and four-body central terms, (ii) zero-range three-body gradient terms, (iii) zero-range tensor terms, (iv) zero-range isospin-breaking terms, (v) finite-range higher-order regularized terms, (vi) finite-range separable terms, (vii) zero-range two-body pairing terms, (viii) multi-quasiparticle blocking, (ix) Pfaffian overlaps, (x) particle-number and parity symmetry restoration, (xi) axialization, (xii) Wigner functions, (xiii) choice of the harmonic-oscillator basis, (xiv) fixed omega partitions, (xv) consistency formula between energy and fields, and we corrected several errors in the previous versions.
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| 3. |
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| 4. |
- Rudolph, Dirk, et al.
(författare)
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Rotational Bands in the Doubly Magic Nucleus 56Ni
- 1999
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Ingår i: Physical Review Letters. - 1079-7114. ; 82:19, s. 3763-3766
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Tidskriftsartikel (refereegranskat)abstract
- Structures of the medium- to high-spin states in the doubly magic nucleus Ni-56 have been investigated using the reaction Si-28(Ar-36, 2 alpha) and the gamma-ray spectrometer Gammasphere in conjunction with the 4 pi charged-particle detector array Microball. Two well-deformed rotational bands have been identified. There is evidence that one of the bands, which is identical to a sequence in the odd-odd neighbor Cu-58, partially decays via proton emission into the ground state of Co-55. Predictions of extensive large-scale shell-model and cranked Hartree-Fock and Hartree-Fock-Bogolyubov calculations are compared with the experimental data.
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| 5. |
- Vernon, A. R., et al.
(författare)
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Nuclear moments of indium isotopes reveal abrupt change at magic number 82
- 2022
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 607:7918, s. 260-265
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Tidskriftsartikel (refereegranskat)abstract
- In spite of the high-density and strongly correlated nature of the atomic nucleus, experimental and theoretical evidence suggests that around particular ‘magic’ numbers of nucleons, nuclear properties are governed by a single unpaired nucleon1,2. A microscopic understanding of the extent of this behaviour and its evolution in neutron-rich nuclei remains an open question in nuclear physics3–5. The indium isotopes are considered a textbook example of this phenomenon6, in which the constancy of their electromagnetic properties indicated that a single unpaired proton hole can provide the identity of a complex many-nucleon system6,7. Here we present precision laser spectroscopy measurements performed to investigate the validity of this simple single-particle picture. Observation of an abrupt change in the dipole moment at N = 82 indicates that, whereas the single-particle picture indeed dominates at neutron magic number N = 82 (refs. 2,8), it does not for previously studied isotopes. To investigate the microscopic origin of these observations, our work provides a combined effort with developments in two complementary nuclear many-body methods: ab initio valence-space in-medium similarity renormalization group and density functional theory (DFT). We find that the inclusion of time-symmetry-breaking mean fields is essential for a correct description of nuclear magnetic properties, which were previously poorly constrained. These experimental and theoretical findings are key to understanding how seemingly simple single-particle phenomena naturally emerge from complex interactions among protons and neutrons. © 2022, The Author(s), under exclusive licence to Springer Nature Limited.
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| 6. |
- Andersen, O., et al.
(författare)
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Electrical activity of carbon-hydrogen centers in Si
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:23, s. 235205-1
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Tidskriftsartikel (refereegranskat)abstract
- The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.
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| 7. |
- Andersen, O., et al.
(författare)
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Piezospectroscopic analysis of the hydrogen-carbon complexes in silicon
- 2001
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Ingår i: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 308, s. 139-142
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Tidskriftsartikel (refereegranskat)abstract
- We have observed the donor (Ec-0.22 eV) and acceptor (Ec-0.16 eV) levels related to hydrogen-carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen-carbon complex irreversibly reconfigures at temperatures above 225 K to a configuration characterized by the acceptor level, which is stable up to room temperature. The same acceptor level is also observed after atomic hydrogen diffusion. We have used Laplace transform deep level transient spectroscopy (DLTS) to show the influence of uniaxial stress on the electron emission process and the effect of the stress-induced alignment for the acceptor state. The pattern of the Laplace DLTS peak splittings indicate a trigonal symmetry of the defect. First principles calculations were carried out on the hydrogen-carbon defects with a view of determining their electrical levels and stress response for comparison with the experimental results.
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| 8. |
- Coutinho, J., et al.
(författare)
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Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 68:18, s. 184106-1
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Tidskriftsartikel (refereegranskat)abstract
- The piezospectroscopic properties of the VOH defect in Si are found using stress Laplace deep level transient spectroscopy (DLTS) and are compared with local density-functional calculations of (i) the acceptor level and its shift under stress, and (ii) the alignment of the neutral center under stress. The theory is able to account for two acceptor levels observed for 〈100〉, 〈111〉, and 〈110〉 stress even though additional splitting is expected for a defect with static C1h symmetry. This is related to (i) a rapid reorientation of the H atom within the defect at temperatures at which the DLTS experiments are carried out, and (ii) the small effect of stress on two orientations of the defect under 〈110〉 stress. The theory is also able to give a quantitative account of the alignment of the center. The effect of stress on the reorientation barrier of the defect is also investigated. The reorientation barrier of the defect in its positive charge state is found theoretically to be very small, consistent with the lack of any splitting in the donor level under stress.
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| 9. |
- Larsen, A. Nylandsted, et al.
(författare)
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E center in silicon has a donor level in the band gap
- 2006
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 97:10, s. 106402/1-106402/4
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Tidskriftsartikel (refereegranskat)abstract
- It has been an accepted fact for more than 40 years that the E center in Si (the group-V impurity-vacancy pair)-one of the most studied defects in semiconductors-has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past.
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| 10. |
- Markevich, VP, et al.
(författare)
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Electronic properties of vacancy-oxygen complex in Ge crystals
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:10, s. 1821-1823
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Tidskriftsartikel (refereegranskat)abstract
- It is argued that the vacancy-oxygen (VO) complex (A center) in Ge has three charge states: double negative, single negative, and neutral. Corresponding energy levels are located at E-c-0.21 eV (VO--/-) and E-v+0.27 eV (VO-/0). An absorption line at 716 cm(-1) has been assigned to the asymmetrical stretching vibration mode of the doubly negatively charged VO complex. (C) 2002 American Institute of Physics.
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| 11. |
- Markevich, VP, et al.
(författare)
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Vacancy-oxygen complex in Ge crystals
- 2003
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Ingår i: Physica B: Condensed Matter. - : Elsevier BV. - 0921-4526. ; 340, s. 844-848
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Tidskriftsartikel (refereegranskat)abstract
- Vacancy-oxygen (VO) complexes in Ge crystals have been studied by means of high-resolution infrared absorption and deep-level transient spectroscopy (Laplace DLTS) measurements. It is argued that the VO center in Ge has three charge states: double negative (VO--), single negative (VO-) and neutral (VO0) with the corresponding energy levels at E(- -/-) = E-c-0.21 eV and E(-/0) = E-v + 0.27 eV. Absorption lines at 716, 669 and 621 cm(-1) have been assigned to oxygen-related asymmetric stretching vibrations for the VO--, VO- and VO0 states, respectively. Isotope analogues of these lines were identified in O-18-doped Ge samples and studies of crystals containing mixtures of O-16 and O-18 confirm that the complex contains only one oxygen atom. Laplace DLTS combined with uniaxial stress has been used to obtain information on the symmetry of the VO complex. It was found that the defect in VO-- state has orthorhombic-I symmetry (point group C-2v) as for the case of the VO in Si. (C) 2003 Elsevier B.V. All rights reserved.
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