| 1. |
- Bruzzi, M, et al.
(författare)
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Radiation-hard semiconductor detectors for SuperLHC
- 2005
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
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Tidskriftsartikel (refereegranskat)abstract
- An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
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| 2. |
- Elsik, Christine G., et al.
(författare)
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The Genome Sequence of Taurine Cattle : A Window to Ruminant Biology and Evolution
- 2009
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 324:5926, s. 522-528
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Tidskriftsartikel (refereegranskat)abstract
- To understand the biology and evolution of ruminants, the cattle genome was sequenced to about sevenfold coverage. The cattle genome contains a minimum of 22,000 genes, with a core set of 14,345 orthologs shared among seven mammalian species of which 1217 are absent or undetected in noneutherian (marsupial or monotreme) genomes. Cattle-specific evolutionary breakpoint regions in chromosomes have a higher density of segmental duplications, enrichment of repetitive elements, and species-specific variations in genes associated with lactation and immune responsiveness. Genes involved in metabolism are generally highly conserved, although five metabolic genes are deleted or extensively diverged from their human orthologs. The cattle genome sequence thus provides a resource for understanding mammalian evolution and accelerating livestock genetic improvement for milk and meat production.
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| 3. |
- Dramburg, S, et al.
(författare)
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EAACI Molecular Allergology User's Guide 2.0
- 2023
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Ingår i: Pediatric allergy and immunology : official publication of the European Society of Pediatric Allergy and Immunology. - 1399-3038. ; 3434 Suppl 28, s. e13854-
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Tidskriftsartikel (refereegranskat)
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| 4. |
- Aleksandrov, D., et al.
(författare)
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Invariant mass spectrum and alpha-n correlation function studied in the fragmentation of He-6 on a carbon target
- 1998
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Ingår i: Nuclear Physics A. - 0375-9474. ; 633:2, s. 234-246
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Tidskriftsartikel (refereegranskat)abstract
- Momentum distributions and invariant mass spectra from the breakup of He-6 ions with an energy of 240 MeV/u interacting with a carbon target have been studied. The data were used to extract information about the reaction mechanism which is influenced by the structure of He-6. It is found that the dominant reaction mechanism is a two-step process: knock out of one neutron followed by the decay of the He-5 resonance. The shape of the (alpha+n) two-body invariant mass spectrum is interpreted as mainly reflecting the 5He ground state which is a J(pi) = 3/2(-) resonance. However, no evidence for correlations between cu particles and neutrons is observed in the momentum widths of the distributions. It is demonstrated that a combined analysis of the two-body invariant mass spectrum and an appropriate correlation function may be used to determine the properties of the intermediate resonance. (C) 1998 Elsevier Science B.V.
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| 5. |
- Chulkov, L. V., et al.
(författare)
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Large spin alignment of the unbound He-5 fragment after fragmentation of 240 MeV/nucleon He-6
- 1997
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Ingår i: Physical Review Letters. - 1079-7114 .- 0031-9007. ; 79:2, s. 201-204
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Tidskriftsartikel (refereegranskat)abstract
- Peripheral fragmentation of a 240 MeV/nucleon beam of the halo nucleus He-6 incident on carbon target has been studied in a kinematically complete experiment. It is found that one-neutron stripping to the unbound nucleus He-5 is the dominant fragmentation mechanism and that it leads to a spin alignment of He-5 in a plane perpendicular to the He-5 momentum vector. This is expected to be a common feature for all neutron halo nuclei.
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| 6. |
- Aleksandrov, D., et al.
(författare)
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Halo excitations in fragmentation of He-6 at 240 MeV/u on carbon and lead targets
- 2000
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Ingår i: Nuclear Physics A. - 0375-9474. ; 669:1-2, s. 51-64
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Tidskriftsartikel (refereegranskat)abstract
- Dissociation of a 240 MeV/u beam of He-6, incident on carbon and lead targets, has been studied in kinematically complete experiments to investigate low-lying excitation modes in the halo nucleus He-6. It is shown that alignment effects characterize the inelastic scattering and allow an unambiguous assignment of the spin of a narrow resonance observed in the excitation energy spectrum. The differential cross sections for the He-6 inelastic scattering on carbon and lead targets were deduced from the measured moments of the two neutrons and the a-particle. An analysis of these distributions shows that quadrupole and, possibly, monopole excitations characterize the hadronic interaction, while the dipole mode is dominating in Coulomb dissociation. Neither theoretically predicted new resonance states in He-6 nor nuclear excitation of a dipole mode were found. Direct evidence has been obtained for strong suppression of Coulornb post-acceleration in direct Coulomb breakup in a lead target.
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| 7. |
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| 8. |
- Blumenau, A.T., et al.
(författare)
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The effect of charge on kink migration at 90° partial dislocations in SiC
- 2005
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 202:5, s. 877-882
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Tidskriftsartikel (refereegranskat)abstract
- SiC bipolar devices show a degradation under forward-biased operation which has been linked with a recombination enhanced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and 2H-SiC using the density functional based codes DFTB and AIMPRO. After in earlier theoretical work we reported on the structure, energetics and electronic activity of both of the Shockley partials, and on the formation and migration barriers of kinks, in this work we present first results on the effect of charge on the disloction kinks. The calculations give insights into the device degradation mechanism.
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| 9. |
- Goss, J.P., et al.
(författare)
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Planar interstitial aggregates in Si
- 2002
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 14:48, s. 12843-12853
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Tidskriftsartikel (refereegranskat)abstract
- Self-interstitials in silicon aggregate to form rod-like defects aligned along [110] directions and inhabiting either {111} or {113} crystallographic planes. These systems are known to be electrically and optically active. We present the results of first-principles calculations on the structure and energetics for candidate structures contained within the {113}, {111} and {001} planes and compare the results with experiment.
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| 10. |
- Markenroth, Karin, 1973, et al.
(författare)
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He-8-He-6: a comparative study of nuclear fragmentation reactions
- 2001
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Ingår i: Nuclear Physics A. - 0375-9474. ; 679:3-4, s. 462-480
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Tidskriftsartikel (refereegranskat)abstract
- Dissociation of 227 MeV/u He-8 in a carbon target has been studied in kinematically complete experiments. The data include the relative energy spectrum, angular distributions in the neutron knock-out channel (He-6 + n) as well as diffractive dissociation and inelastic scattering into the (He-6 + 2n) channel. The data are compared with corresponding results from the well-known halo nucleus He-6. In both cases it is found that neutron knock-out is the: dominating reaction channel. The relative energy spectrum (He-6 + n) shows a structure, which is interpreted as being due to the I-pi = 3/2(-) resonance in the He-7 ground state with about equal contribution from its I-pi = 1/2(-) spin-orbit partner. The He-7 resonance shows a spin alignment similar to that observed in He-5, but with a smaller anisotropy indicating that the structure of the He-8 ground state is more complicated than that of He-6. The data in the (He-6 + 2n) channel were used to identify resonances in the excitation energy spectrum of He-8. If the spectrum is interpreted as two overlapping resonances, the spin-parity assignment for these is found to be 2(+) and 1(-), respectively.
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| 11. |
- Eberlein, T.A.G., et al.
(författare)
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Effect of charge on the movement of dislocations in SiC
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88:8, s. 82113-
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Tidskriftsartikel (refereegranskat)abstract
- SiC bipolar devices show a degradation under forward-biased operation which has been linked with a current induced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and 2H-SiC. In this work we present results on the effect of charge on the dislocation kinks. The calculations show that silicon kinks have a deep filled band above the valence band and the trapping of holes into this band permits motion at room temperature.
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| 12. |
- Eberlein, T.A.G., et al.
(författare)
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Movement and pinning of dislocations in SiC
- 2007
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Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 4:8, s. 2923-2928
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Tidskriftsartikel (refereegranskat)abstract
- SiC bipolar devices show a degradation under forward-biased operation due to the formation and rapid propagation of stacking faults in the active region of the device. It is believed that the observed rapid stacking fault growth is due to a recombination-enhanced dislocation glide (REDG) mechanism at the bordering partial dislocations having either Si or C core atoms. We investigated the effect of charge on the dislocation kinks and found that only silicon kinks have a deep filled band above the valence band. Trapping of holes into this band permits dislocation glide at room temperature. This mechanism is distinct from REDG as it requires only holes to be trapped at a Si partial and not in addition electrons in stacking fault states. We furthermore looked at the pinning of dislocations by nitrogen and boron and found a strong pinning of the C core by N and of the Si core by B.
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| 13. |
- Goss, J.P., et al.
(författare)
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Electrical and optical properties of rod-like defects in silicon
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85:20, s. 4633-4635
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Tidskriftsartikel (refereegranskat)abstract
- Self-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both {113} and {111} RLDs to determine their structures and electrical activity. We find that small {113} RLDs are more stable than {111} RLDs but this reverses for larger defects. We attribute the electrical activity of {113} RLDs found in deep level transient spectroscopy studies with the bounding dislocations and the 0.903 eV photoluminescence to vacancy point defects lying on the habit plane.
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| 14. |
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| 15. |
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| 16. |
- Wohlrab, S., et al.
(författare)
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Ocean acidification increases domoic acid contents during a spring to summer succession of coastal phytoplankton
- 2020
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Ingår i: Harmful Algae. - : Elsevier BV. - 1568-9883. ; 92
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Tidskriftsartikel (refereegranskat)abstract
- Enrichment of the oceans with CO2 may be beneficial for some marine phytoplankton, including harmful algae. Numerous laboratory experiments provided valuable insights into the effects of elevated pCO(2) on the growth and physiology of harmful algal species, including the production of phycotoxins. Experiments close to natural conditions are the next step to improve predictions, as they consider the complex interplay between biotic and abiotic factors that can confound the direct effects of ocean acidification. We therefore investigated the effect of ocean acidification on the occurrence and abundance of phycotoxins in bulk plankton samples during a long-term mesocosm experiment in the Gullmar Fjord, Sweden, an area frequently experiencing harmful algal blooms. During the experimental period, a total of seven phycotoxin-producing harmful algal genera were identified in the fjord, and in accordance, six toxin classes were detected. However, within the mesocosms, only domoic acid and the corresponding producer Pseudo-nitzschia spp. was observed. Despite high variation within treatments, significantly higher particulate domoic acid contents were measured in the mesocosms with elevated pCO(2). Higher particulate domoic acid contents were additionally associated with macronutrient limitation. The risks associated with potentially higher phycotoxin levels in the future ocean warrants attention and should be considered in prospective monitoring strategies for coastal marine waters.
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| 17. |
- Eberlein, T.A.G., et al.
(författare)
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Alphabet luminescence lines in 4H-SiC
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 65:18
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Tidskriftsartikel (refereegranskat)abstract
- First-principles density functional calculations are used to investigate antisite pairs in 4H-SiC. We show that they are likely to be formed in close proximity under ionizing conditions, and they possess a donor level and thermal stability consistent with the series of 40 photoluminescent lines called the alphabet lines. Moreover, the gap vibrational mode of the silicon antisite defect is close to a phonon replica of the b1 line and possesses a weak isotopic shift with 13C in agreement with observation.
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| 18. |
- Eberlein, T.A.G., et al.
(författare)
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Density functional theory calculation of the DI optical center in SiC
- 2006
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 74:14, s. 144106-1
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Tidskriftsartikel (refereegranskat)abstract
- The DI center is a prominent defect which is detected in as-grown or irradiated SiC. It is unusual in that its intensity grows with heat treatments and survives anneals of 1700 °C. It has been assigned recently to either a close-by antisite pair or to the close-by antisite pair adjacent to a carbon antisite. We show here using local density functional calculations that these defects are not stable enough to account for DI. Instead, we assign DI to an isolated Si antisite and the four forms of the close-by antisite pair in 4H-SiC to the a, b, c, and d members of the alphabet series. The assignments allow us to understand the concentration of DI following growth, the recombination enhanced destruction of these alphabet defects and the annealing behavior of the remaining members of the series.
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| 19. |
- Eberlein, T.A.G., et al.
(författare)
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Grown-in and radiation-induced defects in 4H-SiC
- 2005
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Ingår i: Semiconductor defect engineering. - Warrendale, Pa : Materials Research Society. - 1558998179 ; , s. 3-13
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Konferensbidrag (refereegranskat)abstract
- SiC is a material that seems ideal for high-power, high frequency and high temperature electronic devices. It does not suffer from large reverse recovery inefficiencies typical for silicon when switching. In contrast to silicon. SiC is however difficult to dope by diffusion, and instead ion-implantation is used to achieve selective area doping. The drawback of this technique is that irradiating the crystal with dopant atoms creates a great, deal of lattice damage including vacancies, interstitials, antisites and impurity-radiation defect complexes. Although many of the point defects can be eliminated through thermal annealing, some however, e.g. the photoluminescence (PL) D1 and DLTS Z1/Z2 centers in 4H-SiC, are stable to high temperatures. In this polytype, D1 and the related alphabet lines are the most prominent PL signals. The latter can be seen directly after low energy irradiation while D1 usually dominates the PL spectrum of implanted and irradiated SiC after annealing. Not only implantation but also rapid growth of SiC by CVD methods leads to a deterioration in quality with an increase in electrically active grown in defects. Among these, the Z1/Z2 defects are dominant in n-type 4H-SiC. as well as material that has been exposed to radiation. We use first principles density functional calculations to investigate defect models for the above mentioned defects in 4H-SiC and relate their electrical and optical activity to experiments
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| 20. |
- Eberlein, T.A.G., et al.
(författare)
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Self-interstitial clusters in silicon
- 2001
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Ingår i: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 308-310, s. 454-457
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Tidskriftsartikel (refereegranskat)abstract
- Although there have been made many calculations for structures of the self-interstitial in Si and small aggregates of interstitials, In, there have been relatively few attempts to relate these defects with experimental data. Here, we discuss the assignments of the self-interstitial to the AA12 EPR centre and the di-interstitial to the P6 EPR centre.
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| 21. |
- Eberlein, T.A.G., et al.
(författare)
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Shallow acceptors in GaN
- 2007
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 91:13, s. 132105-
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Tidskriftsartikel (refereegranskat)abstract
- Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that CN is the most likely possibility. The authors also show that the CN is passivated by H and the passivated complex is more stable than MgGa-H
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| 22. |
- Fujita, N., et al.
(författare)
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Theoretical aspects on the formation of the tri-interstitial nitrogen defect in silicon
- 2008
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Ingår i: Solid State Phenomena. - 1012-0394 .- 1662-9779. ; 131-133, s. 265-269
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Tidskriftsartikel (refereegranskat)abstract
- In this paper we investigate the formation of interstitial nitrogen trimers N3 which have been suggested as a fast-diffusing species in silicon recently. Out-diffusion profiles of nitro-gen show the involvement of at least two independent nitrogen related defects in the diffusion process depending on the nitrogen concentration at different depths of the sample. When the nitrogen concentration is small it is proposed that nitrogen trimers are formed in a two step process. We present the structural properties of such a defect using density functional theory and examine the energetics of the two proposed reactions leading to the formation of N3.
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| 23. |
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| 24. |
- Jones, R., et al.
(författare)
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Self-interstitial clusters in silicon
- 2002
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186:1, s. 10-18
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Tidskriftsartikel (refereegranskat)abstract
- Although there have been many calculations of the structures of the self-interstitial in Si and small aggregates of interstititals, In, there has been little attempt to relate the defects with experimental data. Here we discuss the assignments of the self-interstitial to the AA12 electron paramagnetic resonance (EPR) centre, and the tri-interstitial and tetra-interstitial to the W-optical centre and the B3 EPR centre, respectively. Difficulties in the assignment of I2 to the P6 EPR centre are also noted.
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| 25. |
- Prezzi, D., et al.
(författare)
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Hydrogen-related photoluminescent centers in SiC
- 2004
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 70:20, s. 205207-1
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Tidskriftsartikel (refereegranskat)abstract
- Local density functional calculations are used to investigate models of the center responsible for a prominent set of luminescent lines with zero-phonon lines around 3.15 eV in hydrogen rich 4H-SiC and previously attributed to VSi-H . We find that the electronic structure of this defect and the character of its vibrational modes are inconsistent with this assignment. In contrast, a H2* center, bound to a carbon anti-site, is more stable than the isolated molecule and possesses a donor level close to that observed for the H-lines. Moreover, its vibrational modes are in good agreement with experiment. A possible mechanism for the radiation enhanced quenching of the defect is discussed.
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