| 1. |
- Frank, Markus, 1970, et al.
(författare)
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Differential Impedance Measurement Method of RFID Transponder Chips at UHF
- 2013
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Ingår i: Proceedings of the 43rd European Microwave Conference. - 9782874870316 ; 2013, s. 68-71
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Konferensbidrag (refereegranskat)abstract
- A novel on-wafer measurement method of RFID transponder chips is presented. A comparison is made between single ended one-port, single ended two-port and differential two-port excitation. The two-port method is a flexible way of measuring chips consisting of both several individuals as well as chip types with different geometries with one and the same probe type. The theory of un-terminating and de-embedding is described and verified by measurements. A qualitative analysis is defined, which explains certain phenomena seen in communication tests performed on RFID protocol level. This is further supported by measurement results from the presented method.
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| 2. |
- Abbasi, Morteza, 1982, et al.
(författare)
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An E-Band(71-76, 81-86 GHz) Balanced Frequency Tripler for High-Speed Communications
- 2009
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Ingår i: APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE. - 9781424428014 ; 1-5, s. 1184-1187
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- An E-Band transistor-based balanced frequency tripler is implemented using a 0.15 mu m GaAs mHEMT process which can be integrated into a single-chip RF front-end. The balanced configuration with 90 degrees hybrids at the input and output improves the port impedance matching which is measured to be better than 15 dB at the input and 10 dB at the output over the frequencies of interest. The tripler has a conversion loss of 11.5 dB from 71 GHz to 76 GHz and 14 dB from 81 GHz to 86 GHz. The second and forth harmonics are suppressed by more than 30 dB and the fundamental frequency by 20 dB. The tripler can deliver -2 dBm output power.
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| 3. |
- Algaba Brazalez, Astrid, 1983, et al.
(författare)
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Evaluation of losses of the ridge gap waveguide at 100 GHz
- 2013
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Ingår i: IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). - 1522-3965. - 9781467353175 ; , s. 1456-1457
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Konferensbidrag (refereegranskat)abstract
- An evaluation of losses of the Ridge Gap Waveguide (r-GAP) at 100 GHz has been developed in terms of Quality Factor. For this aim, an r-GAP resonator has been designed, simulated and measured. The feeding to the circuit is provided via a transition from Micostrip-to-Ridge Gap Waveguide based in electromagnetic coupling in order to ensure compatibility with the available probe stations.
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| 4. |
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| 5. |
- Angelov, Iltcho, 1943, et al.
(författare)
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CMOS LARGE SIGNAL and RF Noise MODEL FOR CAD
- 2006
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Ingår i: EUMC2006 Manchester. ; 1:1
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Konferensbidrag (refereegranskat)abstract
- A compact large-signal model(LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, Power Spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits.The LS model was extended to model the RF Noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model
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| 6. |
- Angelov, Iltcho, 1943, et al.
(författare)
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CMOS large signal model for CAD
- 2003
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Ingår i: 2003 IEEE MTT-S International Microwave Symposium Digest. ; 2, s. 643-646
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Konferensbidrag (refereegranskat)
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| 7. |
- Angelov, Iltcho, 1943, et al.
(författare)
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Experiment design for quick statistical FET large signal model extraction
- 2013
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Ingår i: 81st ARFTG Microwave Measurement Conference: Metrology for High Speed Circuits and Systems, ARFTG 2013. - 9781467349826
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Konferensbidrag (refereegranskat)abstract
- Process variations influence the accuracy of designs and yield in production. This paper addresses the implementation of these variations in large signal FET models, with particular attention on the organization of measurements as to speed up the direct extraction of the model parameters. © 2013 IEEE.
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| 8. |
- Angelov, Iltcho, 1943, et al.
(författare)
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Large Signal Model and Implementation of Impact Ionization for FET Devices
- 2010
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Ingår i: Asia-Pacific Microwave Conference, APMC 2010; Yokohama; Japan; 7 December 2010 through 10 December 2010. - 9784902339222 ; , s. 2299-2302
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Konferensbidrag (refereegranskat)abstract
- This paper presents a large signal model of impact ionization effects(Ii) of FETs and its CAD implementation. The Ii model is compact, describes the effects observed in the gate and drains current in a simple way, converges well in harmonic balance simulation. The model is verified for various FET devices and materials like GaAs SiC,GaN, and InSb. By using this model, the prediction accuracy for Pout and PAE is improved, especially when the device is pushed to the limits and impact ionization can be observed. When aware for the problem, the designer is able to construct in a better way the input and output matching circuits to avoid operating the device in the dangerous regions of operation and hence improve reliability.
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| 9. |
- Angelov, Iltcho, 1943, et al.
(författare)
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On the delay implementation in FET Large Signal Models
- 2020
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Ingår i: 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2020 - Proceedings. - 9781728126456
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Konferensbidrag (refereegranskat)abstract
- Several options for implementing FET channel delay in user defined Large Signal models (LS) are discussed. The high importance of precise definition of reference planes for MMIC operating in mm waves is discussed as well. The delay implementation and a way to improve the reference planes accuracy was tested in a special two stage W-band test amplifier circuit. The LS model was used later to design several practical MMIC circuits.
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| 10. |
- Angelov, Iltcho, 1943, et al.
(författare)
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On the implementation of device processing tolerances in FET Large Signal Models
- 2012
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Ingår i: 2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2012. - 9781467329491
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Konferensbidrag (refereegranskat)abstract
- Device technology is becoming quite mature and repeatable, but nevertheless, for various reasons, there are statistical variations in device parameters. These process variations will influence the accuracy of the designs and yield in production. The implementation of these variations in Large Signal Models is discussed in the paper.
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| 11. |
- Dahlbäck, Robin, 1985, et al.
(författare)
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Compact 340 GHz homodyne transceiver modules for FMWC imaging radar arrays.
- 2016
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2016-August
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Konferensbidrag (refereegranskat)abstract
- We present a solution where one single LO chain is used to feed a homodyne FMCW radar transceiver. An InGaAs pHEMT active frequency multiplier MMIC (x8) and a Schottky diode frequency doubler make up the LO chain. The novel Schottky diode based transceiver operates both as a frequency multiplier (x2) and as a sub-harmonic mixer. The modules operate at a center frequency of 340 GHz with a 30 GHz modulation bandwidth. An output power of 0 dBm, an IF noise level of -168 dBm/Hz and a receiver conversion loss of 18 dB is achieved in the band. The form factor of the modules is adapted to build one- or two- dimensional FMCW radar arrays. State of the art system performance is achieved while system complexity, size and cost is significantly reduced.
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| 12. |
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| 13. |
- Ferndahl, Mattias, 1973, et al.
(författare)
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20 GHz Power Amplifier Design in 130 nm CMOS
- 2008
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Ingår i: 2008 European Microwave Integrated Circuit Conference, EuMIC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008. - 9782874870071 ; , s. 254-257
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Konferensbidrag (refereegranskat)abstract
- Five different 20 GHz power amplifiers in 130 nm CMOS technology have been designed and characterized. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, as well as the combination of two amplifiers using power splitters/combiners. A maximum output power of 63 mW at 20 GHz was achieved. Transistor level characterization using load pull measurements on 1 mm gate width transistors yielded 148 mW output power. These numbers are, to the authors? knowledge, the highest reported for CMOS above 10 GHz. Transistor modeling and layout for power amplifiers are also discussed.
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| 14. |
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| 15. |
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| 16. |
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| 17. |
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| 18. |
- Ferndahl, Mattias, 1973, et al.
(författare)
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A General Statistical Equivalent-Circuit-Based De-Embedding Procedure for High-Frequency Measurements
- 2008
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 56:12, s. 2692-2700
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Tidskriftsartikel (refereegranskat)abstract
- A general equivalent-circuit-based method for the de-embedding of scattering parameters is presented. An equivalent circuit representation is used to model the embedding package. The parameters in the models are estimated with a statistical method using measured data from all de-embedding standards jointly together. Hence, it is possible to assess parameter estimates and their variance and covariance due to measurement uncertainties. A general de-embedding equation, which is valid for any five-port with a defined nodal admittance matrix, is derived and used in the subsequent de-embedding of measured device data. Different equivalent circuit models for the embedding network are then studied, and tradeoffs between model complexity and uncertainty are evaluated. Furthermore, the influence of varying number and combinations of de-embedding standards on the parameter estimates is investigated. The method is verified, using both measured and synthetic data, and compared against previously published work. It is found to be more general while keeping or improving accuracy.
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| 19. |
- Ferndahl, Mattias, 1973, et al.
(författare)
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Broadband 7 GHz VCO in mHEMT Technology
- 2005
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Ingår i: Asia Pacific Microwave Conference 2005. ; 5, s. 689-
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Tidskriftsartikel (refereegranskat)abstract
- The design and characterization of a broadband VCO in a 0.15 μm mHEMT technology is presented. The VCO have an output power of 0 dBm and a broad output frequency from 6.5 to 7.4 GHz using a wide multi fingered mHEMT as varactor. Phase noise is -87 dBc/Hz at 100 kHz offset exhibiting a 30 dB/decade slope due to large flicker noise sources. A comparison both to a similar pHEMT VCO and other pHEMT VCOs in the literature is included.
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| 20. |
- Ferndahl, Mattias, 1973, et al.
(författare)
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CMOS devices and circuits for microwave and millimetre wave applications
- 2005
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Ingår i: 13th European Gallium Arsenide Conference. ; , s. 105-8
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Konferensbidrag (refereegranskat)abstract
- We present several building blocks for RFfront ends at micro and mm-wave frequencies using 90 nmCMOS. The designs are 20 GHz single- and 40 GHz doublestage amplifiers with 5.6 and 7.3 dB gain respectively, a 20GHz resistive mixer with CL = 7.9 dB and IIP3 = 17.5 dBmplus frequency doublers to 40 and 60 GHz with CL = 15.8and 15.3 dB respectively. All circuits have been designedusing distributed elements. Both using a 5 metal layerBEOL process and a 3 metal layer BEOL with postprocessing.
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| 21. |
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| 22. |
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| 23. |
- Ferndahl, Mattias, 1973, et al.
(författare)
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Design and evaluation of 20-GHz power amplifiers in 130-nm CMOS
- 2009
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Ingår i: International Journal of Microwave and Wireless Technologies. - 1759-0787 .- 1759-0795. ; 1:4, s. 301-307
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Tidskriftsartikel (refereegranskat)abstract
- The use of 130-nm CMOS for power amplifiers at 20GHz is explored through a set of power amplifiers as well as transistor level measurements. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, and the combination of two amplifiers using power splitters/combiners. A maximum output power of 63mW at 20GHz was achieved. Transistor-level characterization using load pull measurements on 1-mm gate width transistors yielded 148-mW/mm output power. Transistor modeling and layout for power amplifiers are also discussed. An estimate on the maximum achievable output at 20GHz from 130-nm CMOS power amplifiers, based on findings in this paper and the literature, is finally presented.
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| 24. |
- Ferndahl, Mattias, 1973, et al.
(författare)
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Highly integrated E-band direct conversion receiver
- 2012
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Ingår i: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012. - 1550-8781. - 9781467309295
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Konferensbidrag (refereegranskat)abstract
- This paper presents a highly integrated 70-98 GHz direct conversion receiver with 3 stage LNA, x6 frequency multiplier with buffer amplifier, and IQ-mixer suitable for Eband radio communication. The LNA, x6 and IQ-mixer are also presented separately. The LNA covers 65 to 95 GHz with 15 dB gain and minimum 5.5 dB noise figure, x6 covers 71 to 91 GHz with 0 to 8 dBm output power and the IQ-mixer an RF frequency from 70 to 95 GHz and IF frequency from DC to 12 GHz with only 8 dB conversion loss and better than 15 dB image reject. The complete receiver circuit shows an RF bandwidth of 70 to 98 GHz, LO bandwidth of 75 to 92 GHz and IF bandwidth from DC to more than 12 GHz. The conversion gain is 3 to 6 dB with a noise figure of 5 to 7 dB, the image rejection 15 dB to as high as 28 dB, and the input 1 dB compression point -12 dBm.
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| 25. |
- Ferndahl, Mattias, 1973
(författare)
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Integrated VCOs in Gallium Arsenide HEMT technologies with a novel varactor structure
- 2006
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Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis presents results on metamorphic and pseudomorpic GaAs HEMT based Voltage Controlled Oscillators and a novel high-Q varactor structure, used in the VCOs, together with a straightforward extraction procedure for the varactors.Theory and fundamentals around LC-oscillators with oscillator criteria, phase noise and different topologies are given as background together with VCO phase noise measurement methods and an overview on device flicker noise; its physical origin and measurement.Furthermore, design guidelines and suggestions for successful integrated VCO design is presented using a 7 GHz mHEMT VCO as example. It is also shown that the flicker noise generation in mHEMT and pHEMT increases rapidly with drain source voltage leading to a changed optimal Vds bias in the VCO compared to if these noise sources were non existent.Finally, the conclusion is made that a mHEMT process is equally suitable for VCOs as a pHEMT process with the mHEMT version more favorable from a power consumption perspective.
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