| 1. |
- Angulo Barrios, C., et al.
(författare)
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GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth
- 2001
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Ingår i: Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on.
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Konferensbidrag (refereegranskat)abstract
- GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.
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| 2. |
- Barrios, C. A., et al.
(författare)
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GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GalnP : Fe regrowth
- 2000
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Ingår i: Electronics Letters. - 0013-5194 .- 1350-911X. ; 36:18, s. 1542-1544
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Tidskriftsartikel (refereegranskat)abstract
- The authors report the first results of a GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser (VCSEL) with semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) as the burying layer. Regrowth of SI-GaInP:Fe around 15 mu m diameter and 8 mu m tall VCSEL mesas was carried out by hydride vapour phase epitaxy (HVPE). Under room temperature continuous wave (CW) operation. the device exhibited a threshold current of 3.5mA, a differential quantum efficency of 33% and a light output power of 4.2mW. CW operation at temperatures up to 97 degrees C is also demonstrated.
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| 3. |
- Carlsson, C., et al.
(författare)
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Performance characteristics of buried heterostructure VCSELs using semi-insulating GaInP : Fe regrowth
- 2001
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Ingår i: IEEE Journal of Quantum Electronics. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9197 .- 1558-1713. ; 37:7, s. 945-950
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Tidskriftsartikel (refereegranskat)abstract
- We have fabricated GaAs-AlGaAs buried heterostructure vertical cavity surface emitting lasers, emitting at 850 nm, using semi-insulating GaInP:Fe regrowth and investigated their static properties. Lasers of different size (10-21 mum) have threshold currents in the range 2.8-7.0 mA, and produce a maximum output power of 1.7-6.0 mW at room temperature. The variation of threshold current with device size shows that the leakage current at the regrowth interface accounts for a significant part of the injection current. In spite of this, a differential quantum efficiency in the range 20%-30% is obtained which indicates that the regrowth interface is smooth and does not introduce any significant scattering loss. Studies of the transverse mode properties suggest that the GaInP provides weak guiding, resulting in single mode operation up to an output power of 0.7 mW and a beam divergence of only 6 degrees for lasers as large as 10 mum.
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| 4. |
- Hammar, Mattias, et al.
(författare)
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1.3-mu m InGaAs vertical-cavity surface-emitting lasers
- 2005
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Ingår i: 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS). - 0780392175 ; , s. 396-397
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Konferensbidrag (refereegranskat)abstract
- We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-mu m range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140 degrees C and 10 Gbit/s data transmission.
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| 5. |
- Stevens, Renaud, 1972-, et al.
(författare)
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High-speed visible VCSEL for POF data links
- 2000
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Ingår i: Proc. SPIE 3946, SPIE’s Optoelectronics 2000, Photonics West, San Jose, US, January 2000.. - : SPIE. ; , s. 88-94
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Konferensbidrag (refereegranskat)abstract
- We report on two AlGaInP-based visible VCSEL designs based on different current confinement schemes, ion implantation and selective oxidation, and we compare the respective performances with a particular interest on the modulation properties. The implanted device operated continuous wave (CW) up to 40 degrees Celsius. Threshold current of 7 mA, threshold voltage of 2.5 V and maximum optical power of 0.3 mW were measured at room temperature. The small signal modulation responses were fitted using a 3-poles model, allowing the estimation of various parameters such as resonance frequency, damping factor and parasitic cut-off. The maximum 3dB- bandwidth was shown to be 2.1 GHz, limited both by thermal and parasitic effects. 'Error-free' transmission at 1 Gb/s was demonstrated through 50-meter of graded-index POF. The selectivity oxidized devices achieve much higher output power (1.8 mW for the 10 micrometer opening diameter) with threshold current as low a 1.5 mA and threshold voltage of 2.1 V at room temperature, and operate CW up to 49 degrees Celsius. The maximum 3 dB-bandwidth was 4.5 GHz. Modulation current efficiency factor up to 2.8 GHz/(root)[mA] was measured.
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| 6. |
- Vukusic, J., et al.
(författare)
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Fabrication and characterization of diffractive optical elements in InP for monolithic integration with surface-emitting components
- 2000
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Ingår i: Applied Optics. - 1559-128X .- 2155-3165. ; 39:3, s. 398-401
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Tidskriftsartikel (refereegranskat)abstract
- We report on the fabrication and subsequent characterization of binary diffractive optical elements (DOE's) in InP for operation at 1.3 mu m. Fresnel lenses of different focal, lengths and a DOE that splits and focuses an incident beam into a 1 x 4 array of spots (optical fan-out) were fabricated. We realized the surface reliefs by patterning resist, using electron-beam lithography and etching with a chemically assisted ion beam, which produced well-defined patterns with smooth sidewalls and little if no surface roughness. The measured efficiency for the lenses was 36%. For the fan-out element the efficiency and the uniformity error were 26% and 30%, respectively. Spot sizes small as 16 mu m were measured.
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| 7. |
- Vukusic, J., et al.
(författare)
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MOVPE-grown GaInNAsVCSELs at 1.3 mu m with conventional mirror design approach
- 2003
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 39:8, s. 662-664
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Tidskriftsartikel (refereegranskat)abstract
- 1.3 mum oxide confined GaInNAs VCSELs designed using the same design philosophy used for standard 850 nm VCSELs is presented. The VCSELs have doped mirrors, with graded and highly doped interfaces, and are fabricated using production-friendly procedures. Multimode VCSELs (I I mum oxide aperture) with an emission wavelength of 1287 nm have a threshold current of 3 mA and produce I mW of output power at 20degreesC. The maximum operating temperature is 95degreesC. Emission at 1303 nm with I mW of output power and a threshold current of 7 mA has been observed from VCSELs with a larger detuning between the gain peak and the cavity resonance.
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