| 1. |
|
|
| 2. |
- Sobis, Peter, 1978, et al.
(författare)
-
SWI 1200/600 GHz highly integrated receiver front-ends
- 2015
-
Ingår i: 36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. ; session S3.1.2
-
Konferensbidrag (refereegranskat)
|
|
| 3. |
- Sobis, Peter, 1978, et al.
(författare)
-
Ultra Low Noise 600/1200 GHz and 874 GHz GaAs Schottky Receivers for SWI and ISMAR
- 2016
-
Ingår i: Twenty-seventh International Symposium on Space Terahertz Technology (ISSTT).
-
Konferensbidrag (refereegranskat)abstract
- Omnisys Instruments is responsible for the 600/1200 GHz broadband front-end receivers and back-end spectrometer hardware for the Submillimeter Wave Instrument (SWI) part of the Jupiter Icy moons Explorer (JUICE) mission, and for the development of the dual-polarization 874 GHz spectrometer channels for the airborne icecloud imager instrument ISMAR. We will present our development of these highly integrated heterodyne receivers which are based on membrane integrated GaAs Schottky diode mixer and multiplier circuit technology, and InP HEMT MMIC LNA technology from Chalmers University of Technology. Preliminary results at room temperature on the 1200 GHz breadboard prototypes show on a typical DSB receiver noise below 3000 K in the 1030 GHz-1220 GHz frequency range with only 1-3 mW of LO power. For the 874 GHz receiver flight modules a record low double sideband noise of 2500 K was obtained with only 2.3 mW of LO pump power. Both the 1200 GHz and 874 GHz subharmonically pumped Schottky mixer designs have been based on the broadband SWI 600 GHz channel mixer design, which had a repeatable receiver noise performance below 1200K with less than 2 mW of pump power at room temperature. All together these results are setting new standards for critical receiver hardware operating at room temperature used in instrumentation for atmospheric research and remote sensing applications.
|
|
| 4. |
|
|
| 5. |
|
|
| 6. |
|
|
| 7. |
|
|
| 8. |
|
|
| 9. |
- Borg, Malin, 1978, et al.
(författare)
-
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
- 2008
-
Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 52:5, s. 775-781
-
Tidskriftsartikel (refereegranskat)abstract
- The effect of gate-length variation on DC and RF performance of InAs/AlSb HEMTs, biased for low DC power consumption or high gain, is reported. Simultaneously fabricated devices, with gate lengths between 225 nm and 335 nm, have been compared. DC measurements revealed higher output conductance gds and slightly increased impact ionization with reduced gate length. When reducing the gate length from 335 nm to 225 nm, the DC power consumption was reduced by approximately 80% at an fT of 120 GHz. Furthermore, a 225 nm gate-length HEMT biased for high gain exhibited an extrinsic fT of 165 GHz and an extrinsic fmax of 115 GHz, at a DC power consumption of 100 mW/mm. When biased for low DC power consumption of 20 mW/mm the same HEMT exhibited an extrinsic fT and fmax of 120 GHz and 110 GHz, respectively.
|
|
| 10. |
|
|
| 11. |
|
|
| 12. |
- Cao, Haiying, 1982, et al.
(författare)
-
Linearization of Efficiency-Optimized Dynamic Load Modulation Transmitter Architectures
- 2010
-
Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 58:4, s. 873-881
-
Tidskriftsartikel (refereegranskat)abstract
- In this paper, a detailed linearization procedure for dynamic load modulation (DLM) transmitter architectures is proposed for the first time. Compared with the conventional single-input/single-output digital predistortion (DPD) approach used with traditional power amplifiers (PAs), the proposed linearization scheme is based on a regular memory DPD in combination with an efficiency-optimized static one-to-two mapping inverse model, which constructs the predistorted input signals to the DLM transmitter. The time-alignment issue, which is very important to this dual-input architecture, is also considered. The proposed technique is demonstrated by a 1-GHz 10-W LDMOS PA that employs a varactor-based tunable matching network. A normalized mean square error of $-{hbox {35 dB}}$, and adjacent channel leakage ratio of $-hbox{43 dBc}$ is achieved, with an average power-added efficiency of 53% for a single-carrier WCDMA signal with 7-dB peak-to-average ratio. Finally, it is shown that the time-alignment sensitivity is relaxed when the proposed linearization scheme is used. This means that the overall complexity of the transmitter implementation can be reduced.
|
|
| 13. |
- Cha, Eunjung, 1985, et al.
(författare)
-
0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
- 2018
-
Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 66:11, s. 4860-4869
-
Tidskriftsartikel (refereegranskat)abstract
- We present two monolithic microwave integrated circuit (MMIC) cryogenic broadband low-noise amplifiers (LNAs) based on the 100 nm gate length InP high-electron mobility transistor technology for the frequency range of 0.3-14 and 16-28 GHz. The 0.3-14 GHz three-stage LNA exhibited a gain of 41.6 ± 1.4 dB and an average noise temperature of 3.5 K with a minimum noise temperature of 2.2 K at 6 GHz when cooled down to 4 K. The 16-28 GHz three-stage LNA showed a gain of 32.3 ± 1.8 dB and an average noise temperature of 6.3 K with a minimum noise temperature of 4.8 K at 20.8 GHz at the ambient temperature of 4 K. This is the first demonstration of cryogenic MMIC LNA covering the whole K-band. To the best of the authors' knowledge, the cryogenic MMIC LNAs demonstrated the state-of-the-art noise performance in the 0.3-14 and 16-28 GHz frequency range.
|
|
| 14. |
- Cha, Eunjung, 1985, et al.
(författare)
-
A 300-mu W Cryogenic HEMT LNA for Quantum Computing
- 2020
-
Ingår i: PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS). - 0149-645X .- 2576-7216. - 9781728168159 ; , s. 1299-1302
-
Konferensbidrag (refereegranskat)abstract
- This paper reports on ultra-low power 4-8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 mu W. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs.
|
|
| 15. |
- Cha, Eunjung, 1985, et al.
(författare)
-
Cryogenic low-noise InP HEMTs: A source-drain distance study
- 2016
-
Ingår i: 2016 Compound Semiconductor Week, CSW 2016. - 9781509019649 ; , s. Article number 7528576-
-
Konferensbidrag (refereegranskat)abstract
- The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4-15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power was achieved at a source-drain distance of 1.4 mu m. The extracted HEMT minimum noise temperature was 0.9 K at 5.8 GHz for a 3-stage 4-8 GHz hybrid low-noise amplifier at 10 K.
|
|
| 16. |
- Cha, Eunjung, 1985, et al.
(författare)
-
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers
- 2020
-
Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:7, s. 1005-1008
-
Tidskriftsartikel (refereegranskat)abstract
- This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of 112 mu W. This result was obtained by using 100-nm gate length InP HEMTs with improved transconductance at low drain current through a scaled-down gate-channel distance while maintaining a low gate leakage current with the use of an InP etch stop layer and Pt gate metal. The noise performance of InP HEMTs was demonstrated in a 4-8 GHz (C-band) three-stage hybrid LNA at the ambient temperature of 5 K. At a dc power dissipation of 300 mu W, the average noise temperature was 2.8 K with 27 dB gain. At a dc power dissipation of 112 mu W, the LNA exhibited an average noise temperature of 4.1 K with a gain of 20 dB. The presented results demonstrate the large potential of InP HEMT technology for sub-mW cryogenic LNA design.
|
|
| 17. |
- Cha, Eunjung, 1985, et al.
(författare)
-
Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation
- 2023
-
Ingår i: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 70:5, s. 2431-2436
-
Tidskriftsartikel (refereegranskat)abstract
- We report the impact from channel composition on the cryogenic low-noise performance at low dc power for a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor (HEMT). Two indium (In) channel compositions, 65% and 80%, were studied by dc and RF characterization at 300 and 5 K. For the cryogenic low-noise optimization, it was important to increase the transconductance to gate–source capacitance ratio in the weak inversion region implying that a higher maximum cutoff frequency in the HEMT does not guarantee lower noise. The HEMT noise performance was obtained from noise measurements in a hybrid three-stage 4–8-GHz ( $\textit{C}$ -band) low-noise amplifier (LNA) down to 300- $\mu$ W dc power dissipation. While the HEMT LNA noise performance for both the channel compositions at 300 K was found to be comparable, the HEMT LNA at 5 K with 65% In channel showed a minimum noise temperature of 1.4 K, whereas the noise temperature in the HEMT LNA with 80% In channel HEMTs increased to 2.4 K. The difference in the noise became more pronounced at reduced dc power dissipation. The ultralow dc power of 300 $\mu$ W demonstrated for a cryogenic $\textit{C}$ -band LNA with an average noise temperature of 2.9 K and 24-dB gain is of interest for future qubit read-out electronics at 4 K.
|
|
| 18. |
- Cha, Eunjung, 1985, et al.
(författare)
-
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
- 2017
-
Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 65:12, s. 5171-5180
-
Tidskriftsartikel (refereegranskat)abstract
- We investigate the cryogenic stability of two-finger 100-nm gate-length InP HEMTs aimed for Ka- and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging between 30 and 50 mu m exhibit unstable cryogenic behavior with jumps in drain current and discontinuous peaks in transconductance. We also find that shorter gate length enhances the cryogenic instability. We demonstrate that the instability of two-finger transistors can be suppressed by either adding a source air bridge, connecting the back end of gates, or increasing the gate resistance. A three-stage 24-40 GHz and a four-stage 28-52-GHz monolithic microwave-integrated circuit LNA using the stabilized InP HEMTs are presented. The Ka-band amplifier achieves a minimum noise temperature of 7 K at 25.6 GHz with an average noise temperature of 10.6 K at an ambient temperature of 5.5 K. The amplifier gain is 29 dB +/- 0.6 dB. The Q-band amplifier exhibits minimum noise temperature of 6.7 K at 32.8 GHz with average noise temperature of 10 K at ambient temperature of 5.5 K. The amplifier gain is 34 dB +/- 0.8 dB. To our knowledge, the Ka- and Q-band amplifiers demonstrate the lowest noise temperature reported so far for InP cryogenic LNAs.
|
|
| 19. |
- Cha, Eunjung, 1985, et al.
(författare)
-
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs
- 2017
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 168-171
-
Konferensbidrag (refereegranskat)abstract
- We have investigated the cryogenic stability of two-finger InP HEMTs aimed for Ka-band ultra-low noise amplifiers (LNAs). Unlike two-finger transistors with a large gate-width above 2 χ 50 μm, the transistors with a small gate-width exhibit unstable cryogenic behavior. The instability is suppressed by adding a source air-bridge. The stabilizing effect of the air-bridge is demonstrated both on device and circuit level. A three-stage 2440 GHz monolithic microwave integrated circuit (MMIC) LNA using a stabilized 100-nm HEMT technology is presented. The amplifier achieves a record noise temperature of 7 K at 25.6 GHz with an average noise of 10.6 K across the whole band at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB exhibiting very stable and repeatable operation. To our knowledge, this amplifier presents the lowest noise temperature reported so far for InP cryogenic LNAs covering the Ka-band.
|
|
| 20. |
- Chehrenegar, Pirooz, 1964, et al.
(författare)
-
Design and characterization of a highly linear 3 GHz GaN HEMT amplifier
- 2011
-
Ingår i: 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2011. Vienna, 18-19 April 2011. - 9781457706493
-
Konferensbidrag (refereegranskat)abstract
- In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. A 3 dB bandwidth of 2.7-3.6 GHz with a maximum gain of 18 dB was measured. The output third-order intercept point (OIP3) was measured to 39 dBm with a maximum power consumption of 2.1 W. With a reduction of power consumption to 1 W the noise figure was improved by 0.6 dB while the OIP3 was degraded 3 dB.
|
|
| 21. |
- Chehrenegar, Pirooz, 1964, et al.
(författare)
-
Highly linear 1-3 GHz GaN HEMT low-noise amplifier
- 2012
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
-
Konferensbidrag (refereegranskat)abstract
- A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The amplifier can be operated at three frequency bands of 1, 2 and 3 GHz. The maximum measured gain is 31 dB at 1GHz and the output referred third-order intercept point (OIP3) is constant for all three frequency bands and equal to 41±1 dBm at a power consumption of L.2 W. A minimum noise figure (NF) of 0.5 dB is measured for the amplifier at the same bias point demonstrating the simultaneous linearity and low noise performance. The presented performance together with the reasonably low power consumption is outstanding in comparison with recently published amplifiers in GaN technology and available commercial GaAs LNAs.
|
|
| 22. |
|
|
| 23. |
- Desplanque, L., et al.
(författare)
-
AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
- 2012
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 100:26
-
Tidskriftsartikel (refereegranskat)abstract
- The influence of the growth conditions at the AlSb/GaAs interface on the electron mobility in AlSb/InAs heterostructures is investigated. We show that an excessive antimony flux during the initial stage of the AlSb buffer growth leads to a strong anisotropy of electron mobility in InAs between [110] and [1-10] crystallographic orientations. This anisotropy is attributed to the formation of trenches oriented along the [1-10] direction in the InAs channel. Transmission electron microscopy reveals that these trenches are directly related to twinning defects originating from the AlSb/GaAs interface.
|
|
| 24. |
- Ducournau, G., et al.
(författare)
-
200 GHz communication system using unipolar InAs THz rectifiers
- 2013
-
Ingår i: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. - 9781467347174
-
Konferensbidrag (refereegranskat)abstract
- We report on the first use of a THz detector based on InAs rectifying nanochannels in a communication system. The transmitter is composed of an electronic multiplication chain, externally amplitude modulated at the input signal. The system has been driven at 200 GHz and up to 500 Mbps data signals have been transmitted in an indoor configuration. In contrast to most nanodevices, the InAs detector has a low impedance (580 ω) and is therefore easily loaded by 50 ω electronics. The data rate limitation is mainly coming from parasitics coupled in the board. © 2013 IEEE.
|
|
| 25. |
|
|
