| 1. |
- Chen, Jingjing, 1982, et al.
(författare)
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Influence of White LO Noise on Wideband Communication
- 2018
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 66:7, s. 3349-3359
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Tidskriftsartikel (refereegranskat)abstract
- Applying a spectrally efficient modulation to a wideband signal provides an extremely high data rate potential in millimeter-wave communication. In reality, wideband systems, as reported in open literature, typically suffer from insufficient signal-to-noise ratio (SNR) and thus are not able to support high-order modulation. In a recent experimental study, we have identified that a high noise floor from frequency-multiplied local oscillator (LO) sources is a major data rate limitation in wideband systems. In this paper, we present a detailed study with a mathematical model to describe the influence of the LO noise on a communication signal through frequency conversion. Followed by experimental investigations using multigigabit 64-quadrature amplitude modulation signals, measurements are performed at frequency up- and down-conversions. Both cases show SNR degradation on the frequency-converted signals as the corresponding LO noise floor increases. We provide experimental proof that the nature of the LO noise floor is white, with nearly the same amount of phase and amplitude noises. Various ways to reduce the white LO noise floor through the new hardware design are discussed providing design requirements and considerations.
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| 11. |
- Kuylenstierna, Dan, 1976, et al.
(författare)
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Lumped-element quadrature power splitters using mixed right/left-handed transmission lines
- 2005
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 53:8, s. 2616-21
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents the design of lumped quadrature power splitters (LQPSs) based on unit cells of right-handed (RH) and left-handed (LH) synthetic transmission lines (TLs). The LQPSs include a lumped Wilkinson splitter, with phase-adjusting RH/LH TLs at the outputs. Two topologies, considered to be advantageous with regards to size and electric characteristics, are studied in detail. For these two, closed-form design equations are derived and the performances are analyzed by circuit simulations. The theory and simulation results are experimentally validated by monolithic-microwave integrated-circuit prototypes designed for a center frequency of 2.5 GHz. Both prototypes have performance that agree well with theory and design simulations. Within the frequency range of 2-3 GHz, the maximum amplitude and phase errors are less than 0.3 dB and 3 degrees , respectively. All reflections and the isolation are better than -10 dB. The effective areas of the two prototypes are 900*700 mu m/sup 2/ and 720*520 mu m/sup 2/, respectively
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| 12. |
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| 13. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Direct carrier quadrature modulator and Demodulator MMICs for 60 GHz gigabit wireless communications
- 2011
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Ingår i: Asia-Pacific Microwave Conference Proceedings (APMC 2011; Melbourne, VIC; 5 - 8 December 2011). - 9780858259744 ; , s. 1134-1137
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- A 60 GHz direct carrier quadrature modulator is designed and fabricated in 0.15 μm mHEMT technology. The design is based on passive mixers and therefore reciprocal which makes it possible to be used both as modulator and demodulator. The modulator has an input bandwidth of 0-5 GHz on each of the I and Q ports and an RF bandwidth of 53-68 GHz. Carrier leakage to the output port is eliminated by addition of an inductive path from the LO port to the RF port. The modulator requires 5 dBm LO power and can output up to -6 dBm RF power in linear region and up to -4 dBm when driven into saturation. When operated as an SSB mixer, the conversion loss is measured to be 11 dB and image and LO signals are suppressed by as much as 30 dB compared to the desired signal. For demonstration, a pair of the presented modulator/demodulator is used to transmit 7Gbps BPSK signal over 1m and 10Gbps QPSK signal over 0.5m wireless link.
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| 14. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna
- 2011
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 59:2, s. 466-478
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1-mu m GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a three-stage low-noise amplifier, and a sub-harmonically pumped resistive mixer with on-chip local oscillator frequency multiplication chain. The transmitter chip is the dual of the receiver chip by inverting the direction of the RF amplifier. The chips are mounted on 5-mm silicon lenses in order to interface the antenna to the free space and are packaged into two separate modules. The double-sideband noise figure (NF) and conversion gain of the receiver module are measured with the Y-factor method. The total noise temperature of 1310 +/- 100K(corresponding to an NF of 7.4 dB), including the losses in the lens and antenna, is measured at 220 GHz with a respective conversion gain of 3.5 dB. The radiated continuous-wave power from the transmitter module is measured to be up to -6 dBm from 212 to 226 GHz. The transmitter and receiver are linked in a quasi-optical setup and the IF to IF response is measured to be flat up to 10 GHz. This is verified to be usable for transmission of a 12.5-Gb/s data stream between the transmit and receive modules over a 0.5-m wireless link. The modules operate with a 1.3-V supply and each consume 110-mW dc power. The presented 220-GHz integrated circuits and modules can be used in a variety of applications, including passive and active imaging, as well as high-speed data communications. To the best of our knowledge, these MMICs are the highest frequency single-chip low-noise heterodyne receiver and transmitter pair reported to date.
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| 15. |
- Bremer, Johan, 1991, et al.
(författare)
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Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
- 2020
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Ingår i: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 67:5, s. 1952-1958
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Tidskriftsartikel (refereegranskat)abstract
- This article presents an electric-based methodology for thermal characterization of semiconductor technologies. It is shown that for technologies such as gallium nitride (GaN) high electron mobility transistors, which exhibit several field induced electron trapping effects, the thermal characterization has to be performed under specific conditions. The electric field is limited to low levels to avoid activation of trap states. At the same time, the dissipated power needs to be high enough to change the operating temperature of the device. The method is demonstrated on a test structure implemented as a GaN resistor with large contact separation. It is used to evaluate the thermal properties of samples with different silicon carbide suppliers and buffer thickness.
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| 16. |
- Chen, Jingjing, 1982, et al.
(författare)
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10 Gbps 16QAM transmission over a 70/80 GHz (E-band) radio test-bed
- 2012
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Ingår i: European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. - : IEEE. - 9782874870286 - 9781467323024 - 9782874870262 ; , s. 556-559
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Konferensbidrag (refereegranskat)abstract
- A millimeter-wave radio test-bed is implemented which demonstrates 16QAM transmission over 70/80 GHz band for data rate up to 10 Gbps. Performance of the 16QAM transmitter and receiver is evaluated in a loop-back lab set-up. With the proposed 10 Gbps on single carrier system architecture, it is possible to achieve 40 Gbps over a 5 GHz bandwidth when combined with polarization and spatial multiplexing.
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| 17. |
- Divinyi, Andreas, et al.
(författare)
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On-Chip Sensors for Temperature Monitoring of Packaged GaN MMICs
- 2024
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Ingår i: IEEE Transactions on Components, Packaging and Manufacturing Technology. - 2156-3985 .- 2156-3950. ; 14:5, s. 891-896
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Tidskriftsartikel (refereegranskat)abstract
- A novel approach to on-chip temperature sensors for non-invasive thermal characterization and monitoring of packaged GaN MMICs is presented. The proposed sensor is fully compatible with commercial GaN foundry processes and enables improved reliability estimation of highly integrated systems. A dedicated test structure is developed to demonstrate the capabilities of the sensor, and an accurate calibration method of its temperature response is proposed. This combination allows for continuous temperature monitoring during operation with electrical acquisition of temperature transients. The method also enables the thermal characterization of the device and package.
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| 18. |
- Eriksson, Klas, 1983, et al.
(författare)
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Design and Characterization of H-Band (220-325 GHz) Amplifiers in a 250-nm InP DHBT Technology
- 2014
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Ingår i: IEEE Transactions on Terahertz Science and Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-342X .- 2156-3446. ; 4:1, s. 56-64
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Tidskriftsartikel (refereegranskat)abstract
- Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.
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| 19. |
- Eriksson, Klas, 1983, et al.
(författare)
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InP DHBT Amplifier Modules Operating Between 150 and 300 GHz Using Membrane Technology
- 2015
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 63:2, s. 433-440
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we present WR05 (140-220 GHz) and WR03 (220-325 GHz) five-stage amplifier modules with novel membrane microstrip-to-waveguide transitions. The modules use a 250-nm InP double heterojunction bipolar transistor (DHBT) technology and multilayer thin-film microstrip transmission lines. The waveguide transitions use E-plane probes on 3- μm-thin GaAs membrane substrate. Beam lead connectors integrated on the transition eliminate the need of highly reactive bond wires. In addition, process steps such as backside metallization, backside vias, and nonrectangular dicing of the integrated circuits (ICs) are not required. The WR05 amplifier module demonstrates a peak gain of 24 dB at 245 GHz and more than 10-dB gain from 155 to 270 GHz. The WR-03 module has 19-dB gain from 230 to 254 GHz with input and output return loss better than 10 dB from 225 to 330 GHz. The two modules were also characterized in terms of noise. The minimum noise figures were measured to 9.7 dB at 195 GHz and 10.8 dB at 240 GHz for the WR05 and WR03 modules, respectively. To the authors' best knowledge, these are the first published results on an InP DHBT amplifier modules operating at these high frequencies. It is also the first time that membrane technology is used for IC packaging, regardless of IC technology.
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| 20. |
- Eriksson, Klas, 1983, et al.
(författare)
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Suppression of Parasitic Substrate Modes in Multilayer Integrated Circuits
- 2015
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Ingår i: IEEE Transactions on Electromagnetic Compatibility. - 0018-9375 .- 1558-187X. ; 57:3, s. 591-594
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Tidskriftsartikel (refereegranskat)abstract
- Integrated circuits (ICs) with multilayer backend process and a large front-side ground plane support the propagation of parasitic substrate modes. These modes resonate at frequencies that typically are within the bandwidth of circuits operating close to and in the submillimeter-wave range, i.e., beyond 300 GHz. The resonances cause unwanted coupling and feedback, which result in circuit instability and degraded performance for circuits operating in the range of these resonances. A common method to suppress these modes from propagating is to use numerous through-wafer vias distributed over the entire circuit. In this letter, we present a study of substrate modes in multilayer ICs with thin-film microstrip interconnects at 125-330 GHz. We show that a doped Si carrier underneath the circuit effectively eliminates the effect of substrate modes on the circuit functionality. This method requires no backside processed through-wafer vias and no backside metallization.
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| 21. |
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| 22. |
- Gavell, Marcus, 1981, et al.
(författare)
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A 53 GHz single chip receiver for geostationary atmospheric measurements
- 2011
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Ingår i: 33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011. - 1550-8781. - 9781612847122
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Konferensbidrag (refereegranskat)abstract
- This paper presents the design and characterization of a multifunctional receiver with integrated x4 frequency multiplier for the LO generation, image reject mixer and low noise amplifier into a single chip MMIC. Noise figure has been measured to 4.6 dB and power consumption to 140 mW. The image rejection is better than 47 dB, conversion gain 10 dB and IIP3 -12 dBm. This performance is far superior to any comparable existing published 53 GHz receiver. The process used is commercially available 0.15 μm GaAs mHEMT technology featuring ft=120 GHz and fmax=200 GHz.
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| 23. |
- Gavell, Marcus, 1981, et al.
(författare)
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A linear 70-95 GHz differential IQ modulator for E-band wireless communication
- 2010
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Ingår i: IEEE MTT-S International Microwave Symposium Digest ; 2010 IEEE MTT-S International Microwave Symposium, MTT 2010; Anaheim, CA; 23 May 2010 through 28 May 2010. - 0149-645X. - 9781424477326 ; , s. 788-791
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 24. |
- Gavell, Marcus, 1981, et al.
(författare)
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An Image Reject Mixer for High-Speed E-band (71-76, 81-86 GHz) Wireless Communication
- 2009
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Ingår i: Compound Semiconductor Integrated Circuit Symposium, Oct. 2009, Greensboro, NC. - : IEEE. - 1550-8781. - 9781424451913 ; , s. 1-4
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Konferensbidrag (refereegranskat)abstract
- In this paper, the design and characterization of a broadband image reject mixer for the next generation of point-to-point microwave links is presented. The manufacturing has been made in a commercially available 0.15 μm gate length GaAs mHEMT technology. The measured performance demonstrates a conversion loss of 9 dB and an image rejection ratio of 25 dB on average across the full E-band (71-76 and 81-86 GHz). Performance peaks at 77 GHz with conversion loss of 7 dB and image rejection of 40 dB. Furthermore, these results have been achieved with a LO power requirement of 4 dBm. To the best of the authors' knowledge this is the first reported image reject mixer suitable for the full E-band. ©2009 IEEE.
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| 25. |
- Gavell, Marcus, 1981, et al.
(författare)
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Design and Analysis of a Wideband Gilbert Cell VGA in 0.25 um InP DHBT Technology With DC-40-GHz Frequency Response
- 2017
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 65:10, s. 3962-3974
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Tidskriftsartikel (refereegranskat)abstract
- A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25- μ m InP double heterojunction bipolar transistor technology with fT/f max of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single -7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 mm^2. We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias
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