| 1. |
- Chumak, A. V., et al.
(author)
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Advances in Magnetics Roadmap on Spin-Wave Computing
- 2022
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In: IEEE Transactions on Magnetics. - 0018-9464. ; 58:6
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Journal article (peer-reviewed)abstract
- Magnonics addresses the physical properties of spin waves and utilizes them for data processing. Scalability down to atomic dimensions, operation in the GHz-to-THz frequency range, utilization of nonlinear and nonreciprocal phenomena, and compatibility with CMOS are just a few of many advantages offered by magnons. Although magnonics is still primarily positioned in the academic domain, the scientific and technological challenges of the field are being extensively investigated, and many proof-of-concept prototypes have already been realized in laboratories. This roadmap is a product of the collective work of many authors that covers versatile spin-wave computing approaches, conceptual building blocks, and underlying physical phenomena. In particular, the roadmap discusses the computation operations with Boolean digital data, unconventional approaches like neuromorphic computing, and the progress towards magnon-based quantum computing. The article is organized as a collection of sub-sections grouped into seven large thematic sections. Each sub-section is prepared by one or a group of authors and concludes with a brief description of current challenges and the outlook of further development for each research direction. Author
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| 2. |
- Kuroki, S. -I, et al.
(author)
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4H-SiC pseudo-CMOS logic inverters for harsh environment electronics
- 2017
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In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. - : Trans Tech Publications. - 9783035710434 ; , s. 669-672
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Conference paper (peer-reviewed)abstract
- For logic gate with higher voltage swing, 4H-SiC pseudo-CMOS logic inverter with four nMOS was suggested and demonstrated, and a high voltage swing of 4.4 V was achieved at VDD=5 V. Simple nMOS inverters were also investigated. Both of pseudo-CMOS and nMOS inverters were operated at a high temperature of 200ºC. For future SiC large integrated circuits, junction leakage current between n+ regions were also investigated with the comb-shaped test elements.
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| 3. |
- Kuroki, S. I., et al.
(author)
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Characterization of 4H-SiC nMOSFETs in harsh environments, high-temperature and high gamma-ray radiation
- 2016
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In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 864-867
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Conference paper (peer-reviewed)abstract
- Characteristics of 4H-SiC nMOSFETs with arsenic-doped S/D and NbNi silicide contacts in harsh environments of high-temperature up to 450°C, and high gamma-ray radiation up to over 100 Mrad, were investigated. At high temperature, field effect mobility increased as proportional to T3/2, and threshold voltage was shifted with temperature coefficients of -4.3 mV/K and -2.6 mV/K for oxide thicknesses of 10 nm and 20 nm, respectively. After Co60 gamma-ray exposure of 113 Mrad, the field effect mobility was varied within 8% for oxide thickness of 10 nm, however for 20 nm oxide thickness, this variation was 26%. The threshold voltage shifts were within 6%.
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| 6. |
- Nagatsuma, H., et al.
(author)
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4H-SiC nMOSFETs with As-Doped S/D and NbNi silicide ohmic contacts
- 2016
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In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 573-576
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Conference paper (peer-reviewed)abstract
- 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts were demonstrated for radiation-hard CMOS electronics. The threshold voltage Vth was designed to be 3.0 V by TCAD simulation, and was 3.6 – 3.8 V at the fabricated devices. On / off ratio was approximately 105.
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| 8. |
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| 9. |
- Virtanen, Ismo, et al.
(author)
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Blood vessels of human islets of Langerhans are surrounded by a double basement membrane
- 2008
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In: Diabetologia. - : Springer Science and Business Media LLC. - 0012-186X .- 1432-0428. ; 51:7, s. 1181-91
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Journal article (peer-reviewed)abstract
- AIMS/HYPOTHESIS: Based on mouse study findings, pancreatic islet cells are supposed to lack basement membrane (BM) and interact directly with vascular endothelial BM. Until now, the BM composition of human islets has remained elusive. METHODS: Immunohistochemistry with specific monoclonal and polyclonal antibodies as well as electron microscopy were used to study BM organisation and composition in human adult islets. Isolated islet cells and function-blocking monoclonal antibodies and recombinant soluble Lutheran peptide were further used to study islet cell adhesion to laminin (Lm)-511. Short-term cultures of islets were used to study Lutheran and integrin distribution. RESULTS: Immunohistochemistry revealed a unique organisation for human Lm-511/521 as a peri-islet BM, which co-invaginated into islets with vessels, forming an outer endocrine BM of the intra-islet vascular channels, and was distinct from the vascular BM that additionally contained Lm-411/421. These findings were verified by electron microscopy. Lutheran glycoprotein, a receptor for the Lm alpha5 chain, was found prominently on endocrine cells, as identified by immunohistochemistry and RT-PCR, whereas alpha(3) and beta(1) integrins were more diffusely distributed. High Lutheran content was also found on endocrine cell membranes in short-term culture of human islets. The adhesion of dispersed beta cells to Lm-511 was inhibited equally effectively by antibodies to integrin and alpha(3) and beta(1) subunits, and by soluble Lutheran peptide. CONCLUSIONS/INTERPRETATION: The present results disclose a hitherto unrecognised BM organisation and adhesion mechanisms in human pancreatic islets as distinct from mouse islets.
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