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- Sun, Zhimei, et al.
(författare)
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Structure of the Ge-Sb-Te phase-change materials studied by theory and experiment
- 2007
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Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 143:4-5, s. 240-244
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Tidskriftsartikel (refereegranskat)abstract
- We have studied the structure of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 compounds using theoretical and experimental means. Based on ab initio calculations, we propose the stacking sequence in the [111] direction of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 phases to be Te-Ge-Te-Sb-Te-v-Te-Sb-, Te-Ge-Te-Sb-Te-v-Te-Sb-Te-Sb-Te-v-Te-Sb-, and Te-Ge-Te-Ge-Te-Sb-Te-v-Te-Sb-Te-Ge-, respectively, where v is an ordered vacancy layer. This structural model agrees with the X-ray diffraction data of sputter-deposited Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 thin films.
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