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- Civrac, Gabriel, et al.
(författare)
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600 V PiN diodes fabricated using on-axis 4H silicon carbide
- 2012
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Ingår i: Materials Science Forum Vol 717 - 720. - : Trans Tech Publications Inc.. ; , s. 969-972
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Konferensbidrag (refereegranskat)abstract
- This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have been performed in order to design their architecture. Some of these diodes have a breakdown voltage around 600 V. A comparison is made with similar diodes fabricated on off-cut grown layers. Computer simulations are used to explain lower breakdown voltages than those expected.
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