| 1. |
- Ahlawat, Paramvir, et al.
(författare)
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A combined molecular dynamics and experimental study of two-step process enabling low-temperature formation of phase-pure alpha-FAPbI3
- 2021
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Ingår i: Science Advances. - : American Association for the Advancement of Science (AAAS). - 2375-2548. ; 7:17
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Tidskriftsartikel (refereegranskat)abstract
- It is well established that the lack of understanding the crystallization process in a two-step sequential deposition has a direct impact on efficiency, stability, and reproducibility of perovskite solar cells. Here, we try to understand the solid-solid phase transition occurring during the two-step sequential deposition of methylammonium lead iodide and formamidinium lead iodide. Using metadynamics, x-ray diffraction, and Raman spectroscopy, we reveal the microscopic details of this process. We find that the formation of perovskite proceeds through intermediate structures and report polymorphs found for methylammonium lead iodide and formamidinium lead iodide. From simulations, we discover a possible crystallization pathway for the highly efficient metastable alpha phase of formamidinium lead iodide. Guided by these simulations, we perform experiments that result in the low-temperature crystallization of phase-pure alpha-formamidinium lead iodide.
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| 2. |
- Jeong, Jaeki, et al.
(författare)
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Pseudo-halide anion engineering for α-FAPbI3 perovskite solar cells
- 2021
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Ingår i: Nature. - : Springer Nature. - 0028-0836 .- 1476-4687. ; 592:7854, s. 381-385
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Tidskriftsartikel (refereegranskat)abstract
- Metal halide perovskites of the general formula ABX(3)-where A is a monovalent cation such as caesium, methylammonium or formamidinium; B is divalent lead, tin or germanium; and X is a halide anion-have shown great potential as light harvesters for thin-film photovoltaics(1-5). Among a large number of compositions investigated, the cubic a-phase of formamidinium lead triiodide (FAPbI(3)) hasemerged as the most promising semiconductor for highly efficient and stable perovskite solar cells(6-9), and maximizing the performance of this material in such devices is of vital importance for the perovskite researchcommunity. Here we introduce an anion engineering concept that uses the pseudo-halide anion formate (HCOO-) to suppress anion-vacancy defects that are present at grain boundaries and at the surface of the perovskite films and to augment the crystallinity of the films. Theresulting solar cell devices attain a power conversion efficiency of 25.6 per cent (certified 25.2 per cent), have long-term operational stability (450 hours) and show intense electroluminescence with external quantum efficiencies of more than 10 per cent. Our findings provide a direct route to eliminate the most abundant and deleterious lattice defects present in metal halide perovskites, providing a facile access to solution-processable films with improved optoelectronic performance.
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| 3. |
- Kim, Minjin, et al.
(författare)
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Conformal quantum dot-SnO2 layers as electron transporters for efficient perovskite solar cells
- 2022
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 375:6578, s. 302-306
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Tidskriftsartikel (refereegranskat)abstract
- Improvements to perovskite solar cells (PSCs) have focused on increasing their power conversion efficiency (PCE) and operational stability and maintaining high performance upon scale-up to module sizes. We report that replacing the commonly used mesoporous-titanium dioxide electron transport layer (ETL) with a thin layer of polyacrylic acid-stabilized tin(IV) oxide quantum dots (paa-QD-SnO2) on the compact-titanium dioxide enhanced light capture and largely suppressed nonradiative recombination at the ETL-perovskite interface. The use of paa-QD-SnO2 as electron-selective contact enabled PSCs (0.08 square centimeters) with a PCE of 25.7% (certified 25.4%) and high operational stability and facilitated the scale-up of the PSCs to larger areas. PCEs of 23.3, 21.7, and 20.6% were achieved for PSCs with active areas of 1, 20, and 64 square centimeters, respectively.
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| 4. |
- Qin, Changliang, et al.
(författare)
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Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs
- 2016
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Ingår i: Solid-State Electronics. - : Elsevier. - 0038-1101 .- 1879-2405. ; 123, s. 38-43
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, the technology of recessed embedded SiGe (e-SiGe) source/drain (S/D) module is optimized for the performance enhancement in 22 nm all-last high-k/metal-gate (HK/MG) pMOSFETs. Different Si recess-etch techniques were applied in S/D regions to increase the strain in the channel and subsequently, improve the performance of transistors. A new recess-etch method consists of a two-step etch method is proposed. This process is an initial anisotropic etch for the formation of shallow trench followed by a final isotropic etch. By introducing the definition of the upper edge distance (D) between the recessed S/D region and the channel region, the process advantage of the new approach is clearly presented. It decreases the value of D than those by conventional one-step isotropic or anisotropic etch of Si. Therefore, the series resistance is reduced and the channel strain is increased, which confirmed by the simulation results. The physical reason of D reducing is analyzed in brief. Applying this recess design, the implant conditions for S/D extension (SDE) are also optimized by using a two-step implantation of BF2 in SiGe layers. The overlap space between doping junction and channel region has great effect on the device's performance. The designed implantation profile decreases the overlap space while keeps a shallow junction depth for a controllable short channel effect. The channel resistance as well as the transfer ID-VG curves varying with different process conditions are demonstrated. It shows the drive current of the device with the optimized SDE implant condition and Si recess-etch process is obviously improved. The change trend of on-off current distributions extracted from a series of devices confirmed the conclusions. This study provides a useful guideline for developing high performance strained PMOS SiGe technology.
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| 5. |
- Wang, Pengfei, et al.
(författare)
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Boosting the performance of perovskite solar cells through a novel active passivation method
- 2018
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Ingår i: Journal of Materials Chemistry A. - : Royal Society of Chemistry. - 2050-7488 .- 2050-7496. ; 6:32, s. 15853-15858
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Tidskriftsartikel (refereegranskat)abstract
- Potassium halides have recently garnered much attention, due to their improvement of perovskite solar cell performance. A small amount of potassium halide incorporated in a perovskite absorber is able to provide advantages in terms of crystallinity, light absorption and trap state reduction. Here, we present a potassium chloride (KCl) pretreatment process to fabricate high-efficiency perovskite solar cells (PSCs). A KCl layer was inserted at the SnO2/MAPbI(3-x)Cl(x) interface via a simple spin coating method. It is observed that potassium cations (K+) and chloride anions (Cl-) diffused into the perovskite film during the thermal annealing process. The diffusion of K+ and Cl- will stop when they reach a bulk defect, resulting in an active passivation effect. It is verified that the incorporation of KCl enhances the crystal perfection and light absorption of the perovskite film. The average power conversion efficiency (PCE) of PSCs increases from 16.62% to 17.81%, with a leading PCE of 19.44%.
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| 6. |
- Zhang, Huotian, et al.
(författare)
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Reversible air-induced optical and electrical modulation of methylammonium lead bromide (MAPbBr(3)) single crystals
- 2017
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 111:10
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Tidskriftsartikel (refereegranskat)abstract
- The photoluminescence (PL) variations of organic-inorganic hybrid lead halide perovskites in different atmospheres are well documented, while the fundamental mechanism still lacks comprehensive understandings. This study reports the reversible optical and electrical properties of methylammonium lead bromide (MAPbBr(3) or CH3NH3PbBr3) single crystals caused by air infiltration. With the change in the surrounding atmosphere from air to vacuum, the PL intensity of perovskite single crystals decreases, while the conductivity increases. By means of first-principles computational studies, the shallow trap states are considered as key elements in PL and conductivity changes. These results have important implications for the characterization and application of organic-inorganic hybrid lead halide perovskites in vacuum.
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