| 1. |
|
|
| 2. |
- Beal, Jacob, et al.
(författare)
-
Robust estimation of bacterial cell count from optical density
- 2020
-
Ingår i: Communications Biology. - : Springer Science and Business Media LLC. - 2399-3642. ; 3:1
-
Tidskriftsartikel (refereegranskat)abstract
- Optical density (OD) is widely used to estimate the density of cells in liquid culture, but cannot be compared between instruments without a standardized calibration protocol and is challenging to relate to actual cell count. We address this with an interlaboratory study comparing three simple, low-cost, and highly accessible OD calibration protocols across 244 laboratories, applied to eight strains of constitutive GFP-expressing E. coli. Based on our results, we recommend calibrating OD to estimated cell count using serial dilution of silica microspheres, which produces highly precise calibration (95.5% of residuals <1.2-fold), is easily assessed for quality control, also assesses instrument effective linear range, and can be combined with fluorescence calibration to obtain units of Molecules of Equivalent Fluorescein (MEFL) per cell, allowing direct comparison and data fusion with flow cytometry measurements: in our study, fluorescence per cell measurements showed only a 1.07-fold mean difference between plate reader and flow cytometry data.
|
|
| 3. |
|
|
| 4. |
-
- 2019
-
Tidskriftsartikel (refereegranskat)
|
|
| 5. |
- Kristanl, Matej, et al.
(författare)
-
The Seventh Visual Object Tracking VOT2019 Challenge Results
- 2019
-
Ingår i: 2019 IEEE/CVF INTERNATIONAL CONFERENCE ON COMPUTER VISION WORKSHOPS (ICCVW). - : IEEE COMPUTER SOC. - 9781728150239 ; , s. 2206-2241
-
Konferensbidrag (refereegranskat)abstract
- The Visual Object Tracking challenge VOT2019 is the seventh annual tracker benchmarking activity organized by the VOT initiative. Results of 81 trackers are presented; many are state-of-the-art trackers published at major computer vision conferences or in journals in the recent years. The evaluation included the standard VOT and other popular methodologies for short-term tracking analysis as well as the standard VOT methodology for long-term tracking analysis. The VOT2019 challenge was composed of five challenges focusing on different tracking domains: (i) VOT-ST2019 challenge focused on short-term tracking in RGB, (ii) VOT-RT2019 challenge focused on "real-time" short-term tracking in RGB, (iii) VOT-LT2019 focused on long-term tracking namely coping with target disappearance and reappearance. Two new challenges have been introduced: (iv) VOT-RGBT2019 challenge focused on short-term tracking in RGB and thermal imagery and (v) VOT-RGBD2019 challenge focused on long-term tracking in RGB and depth imagery. The VOT-ST2019, VOT-RT2019 and VOT-LT2019 datasets were refreshed while new datasets were introduced for VOT-RGBT2019 and VOT-RGBD2019. The VOT toolkit has been updated to support both standard short-term, long-term tracking and tracking with multi-channel imagery. Performance of the tested trackers typically by far exceeds standard baselines. The source code for most of the trackers is publicly available from the VOT page. The dataset, the evaluation kit and the results are publicly available at the challenge website(1).
|
|
| 6. |
- Luo, Jun, et al.
(författare)
-
Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi(2-y)
- 2011
-
Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 32:8, s. 1029-1031
-
Tidskriftsartikel (refereegranskat)abstract
- The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi(2-y) film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi(2-y) formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800 degrees C allow the epitaxial NiSi(2-y) film to take full advantage of the DS process. For drive-in annealing below 750 degrees C, the effective SBH is altered to similar to 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi(2-y) film.
|
|
| 7. |
- Chen, Jun, et al.
(författare)
-
A self-healing elastomer based on an intrinsic non-covalent cross-linking mechanism
- 2019
-
Ingår i: Journal of Materials Chemistry A. - : Royal Society of Chemistry. - 2050-7488. ; 7:25, s. 15207-15214
-
Tidskriftsartikel (refereegranskat)abstract
- Synthesis and comprehensive examination of a polyurethane (urea) elastomer that self-heals based on intrinsic dynamic non-covalent bonds (van der Waals and hydrogen) are reported. The dynamic non-covalent bonds include hydrogen bonds and van der Waals forces. The difference in the previous approach in which hydrogen bond self-healing materials introduced dense quadruple hydrogen bonds at the ends or branched chains poly(propylene carbonate) (PPC) diol was used as the soft segment of the polyurethane (urea) material, and strong van der Waals forces were provided by the large number of carbonyl groups in its main chain; hydrogen bonds were formed by urethane bonds, urea bonds, and the carbonyl groups on PPC. The mechanical properties and healing efficiency of the self-healing polyurethane (urea) elastomer were studied. In situtemperature-dependent infrared and low-field nuclear magnetic resonance (LNMR) measurements were combined with molecular dynamics simulations to investigate the self-healing mechanisms. The results of the studies on the self-healing polyurethane demonstrate that the dynamic cross-linking between hydrogen bonds and van der Waals forces is the basic driving force for the self-healing ability of the material, and temperature is the key factor that affects hydrogen bonding and van der Waals forces. The effect of crystallization on the self-healing ability of the material was also studied. The molecular dynamics simulation results also demonstrate interplay between van der Waals forces and hydrogen bonds at different temperatures.
|
|
| 8. |
- Chen, Jun-Tong, et al.
(författare)
-
Corydalis sunhangii (Papaveraceae) : A new species from Xizang, China, based on plastome and morphological data
- 2024
-
Ingår i: Ecology and Evolution. - : John Wiley & Sons. - 2045-7758. ; 14:4
-
Tidskriftsartikel (refereegranskat)abstract
- A new species of Papaveraceae, Corydalis sunhangii, in the section Trachycarpae, is described and illustrated from Nyingchi City, Xizang, China. The new species has some resemblance to Corydalis kingdonis, but differs by radical leaves prominent, usually several, blade tripinnate (vs. insignificant, few, blade bi- to triternate); cauline leaf usually one, much smaller than radical leaves, usually situated in lower half of stem (vs. usually two, larger than radical leaves, concentrated in upper third of stem); racemes densely 13-35-flowered (vs. rather lax, 4-11-flowered); claw of lower petal shallowly saccate (vs. very prominently and deeply saccate); capsule oblong, with raised lines of dense papillae (vs. broadly obovoid, smooth). Phylogenetic analysis, based on 68 protein-coding plastid genes of 49 samples, shows that C. sunhangii is not closely related to any hitherto described species, which is consistent with our morphological analysis.
|
|
| 9. |
- Gudmundsson, Valur, et al.
(författare)
-
Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation
- 2009
-
Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 30:5, s. 541-543
-
Tidskriftsartikel (refereegranskat)abstract
- Schottky-barrier source/drain (SB-S/D) presents a promising solution to reducing parasitic resistance for device architectures such as fully depleted UTB, trigate, or FinFET. In this letter, a low-temperature process (<= 700 degrees C) with PtSi-based S/D is examined for the fabrication of n-type UTB and trigate FETs on SOI substrate (t(si) = 30 nm). Dopant segregation with As was used to achieve the n-type behavior at implantation doses of 1 (.) 10(15) and 5. 10(15) cm(-2). Similar results were found for UTB devices with both doses, but trigate devices with the larger dose exhibited higher on currents and smaller process variation than their lower dose counterparts.
|
|
| 10. |
- Hudson, Thomas J., et al.
(författare)
-
International network of cancer genome projects
- 2010
-
Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 464:7291, s. 993-998
-
Tidskriftsartikel (refereegranskat)abstract
- The International Cancer Genome Consortium (ICGC) was launched to coordinate large-scale cancer genome studies in tumours from 50 different cancer types and/or subtypes that are of clinical and societal importance across the globe. Systematic studies of more than 25,000 cancer genomes at the genomic, epigenomic and transcriptomic levels will reveal the repertoire of oncogenic mutations, uncover traces of the mutagenic influences, define clinically relevant subtypes for prognosis and therapeutic management, and enable the development of new cancer therapies.
|
|
| 11. |
|
|
| 12. |
- Kristan, Matej, et al.
(författare)
-
The first visual object tracking segmentation VOTS2023 challenge results
- 2023
-
Ingår i: 2023 IEEE/CVF International conference on computer vision workshops (ICCVW). - : Institute of Electrical and Electronics Engineers Inc.. - 9798350307443 - 9798350307450 ; , s. 1788-1810
-
Konferensbidrag (refereegranskat)abstract
- The Visual Object Tracking Segmentation VOTS2023 challenge is the eleventh annual tracker benchmarking activity of the VOT initiative. This challenge is the first to merge short-term and long-term as well as single-target and multiple-target tracking with segmentation masks as the only target location specification. A new dataset was created; the ground truth has been withheld to prevent overfitting. New performance measures and evaluation protocols have been created along with a new toolkit and an evaluation server. Results of the presented 47 trackers indicate that modern tracking frameworks are well-suited to deal with convergence of short-term and long-term tracking and that multiple and single target tracking can be considered a single problem. A leaderboard, with participating trackers details, the source code, the datasets, and the evaluation kit are publicly available at the challenge website1
|
|
| 13. |
|
|
| 14. |
- Lu, Jun, et al.
(författare)
-
On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001)
- 2010
-
Ingår i: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 13:10, s. H360-H362
-
Tidskriftsartikel (refereegranskat)abstract
- Epitaxial Ni(Pt)Si2-y (y < 1) films readily grow upon thermal treatment of 2 nm thick Ni and Ni0.96Pt0.04 films deposited on Si(001). For annealing at 500 degrees C, the films are 5.4-5.6 nm thick with 61-70 mu cm in resistivity. At 750 degrees C, the epitaxial Ni(Pt)Si2-y films become 6.1-6.2 nm thick with a resistivity of 42-44 mu cm. Structural analysis reveals twins, facet wedges, and thickness inhomogeneities in the films grown at 500 degrees C. For higher temperature, an almost defect-free NiSi2-y film with a flat and sharp interface is formed. The presence of Pt makes the aforementioned imperfections more persistent.
|
|
| 15. |
- Luo, Jun, et al.
(författare)
-
Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation
- 2009
-
Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 30:6, s. 608-610
-
Tidskriftsartikel (refereegranskat)abstract
- The presence of carbon at the interface between NiSi and Si has been found to participate in the process of modification of effective Schottky barrier heights using the dopant segregation (DS) method. Carbon alone results in an increased phi(bn) from 0.7 to above 0.9 eV. Boron diffusion in NiSi is inhibited by carbon, and no B-DS at the NiSi/Si interface occurs below 600 degrees C. Above this temperature, B-DS at this interface is evident thus keeping phi(bn) high. The presence of interfacial carbon leads to an increased interfacial As concentration resulting in beneficial effects in tuning phi(bn) above 1.0 eV by As-DS.
|
|
| 16. |
- Luo, Jun, et al.
(författare)
-
Effects of carbon pre-silicidation implant into Si substrate on NiSi
- 2014
-
Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 178-181
-
Tidskriftsartikel (refereegranskat)abstract
- In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 x 10(15) cm(-2) in practical application in accordance with the results achieved in this work. (C) 2013 Elsevier B.V. All rights reserved.
|
|
| 17. |
|
|
| 18. |
- Luo, Jun, et al.
(författare)
-
Interaction of NiSi with dopants for metallic source/drain applications
- 2010
-
Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 28:1, s. C1I1-C1I11
-
Tidskriftsartikel (refereegranskat)abstract
- This work has a focus on NiSi as a possible metallic contact for aggressively scaled complementary metal oxide semiconductor devices. As the bulk work function of NiSi lies close to the middle of Si bandgap, the Schottky barrier height (SBH) of NiSi is rather large for both electron (similar to 0.65 eV) and hole (similar to 0.45 eV). Different approaches have therefore been intensively investigated in the literature aiming at reducing the effective SBH: dopant segregation (DS), surface passivation (SP), and alloying, in order to improve the carrier injection into the conduction channel of a field-effect transistor. The present work explores DS using B and As for the NiSi/Si contact system. The effects of C and N implantation into Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1-0.2 eV for both conduction polarities. A combined use of DS or SP with alloying could be considered for more effective control of effective SBH, but an examination of undesired compound formation and its probable consequences is necessary. Furthermore, an analysis of the metal silicides that have a small "intrinsic" SBH reveals that only a very small number of them are of practical interest as most of the silicides require either a high formation temperature or possess a high specific resistivity.
|
|
| 19. |
|
|
| 20. |
- Luo, Jun, et al.
(författare)
-
On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain
- 2011
-
Ingår i: IEEE Transactions on Electron Devices. - : IEEE Institute of Electrical and Electronics. - 0018-9383 .- 1557-9646. ; 58:7, s. 1898-1906
-
Tidskriftsartikel (refereegranskat)abstract
- This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L-G = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.
|
|
| 21. |
- Luo, Jun, et al.
(författare)
-
Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1-xPtx silicide films
- 2010
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:3
-
Tidskriftsartikel (refereegranskat)abstract
- The formation of ultrathin silicide films of Ni1-xPtx at 450-850 degrees C is reported. Without Pt (x=0) and for t(Ni)< 4 nm, epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 degrees C. For t(Ni)>= 4 nm, polycrystalline NiSi films form and agglomerate at lower temperatures for thinner films. Without Ni (x=1) and for t(Pt)=1-20 nm, the annealing behavior of the resulting PtSi films follows that for the NiSi films. The results for Ni1-xPtx of other compositions support the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability.
|
|
| 22. |
- Luo, Jun, et al.
(författare)
-
Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements
- 2014
-
Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 174-177
-
Tidskriftsartikel (refereegranskat)abstract
- Change of contact resistivity (rho(c)) is monitored for evaluation of Schottky barrier height (SBH) variation induced by dopant segregation (DS). This method is particularly advantageous for metal-semiconductor contacts of small SBH, as it neither requires low-temperature measurement needed in current-voltage characterization of Schottky diodes nor is affected by reverse leakage current often troubling capacitance-voltage characterization. With PtSi contact to both n- and p-type diffusion regions, and the use of opposite or alike dopants implant into pre-formed PtSi films followed by drive-in anneal at different temperatures to induce DS at PtSi/Si interface, the formation of interfacial dipole is confirmed as the responsible cause for modification of effective SBHs thus the increase or decrease of rho(c). A tentative explanation for the change of contact resistivity based on interfacial dipole theory is provided in this work. Influences and interplay of interfacial dipole and space charge on effective SBH are also discussed. (C) 2013 Elsevier B.V. All rights reserved.
|
|
| 23. |
- Luo, Yifei, et al.
(författare)
-
Technology Roadmap for Flexible Sensors
- 2023
-
Ingår i: ACS Nano. - : American Chemical Society. - 1936-0851 .- 1936-086X. ; 17:6, s. 5211-5295
-
Forskningsöversikt (refereegranskat)abstract
- Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.
|
|
| 24. |
- Ma, Tao, et al.
(författare)
-
Genomic insights into salt adaptation in a desert poplar
- 2013
-
Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 4, s. 2797-
-
Tidskriftsartikel (refereegranskat)abstract
- Despite the high economic and ecological importance of forests, our knowledge of the genomic evolution of trees under salt stress remains very limited. Here we report the genome sequence of the desert poplar, Populus euphratica, which exhibits high tolerance to salt stress. Its genome is very similar and collinear to that of the closely related mesophytic congener, P. trichocarpa. However, we find that several gene families likely to be involved in tolerance to salt stress contain significantly more gene copies within the P. euphratica lineage. Furthermore, genes showing evidence of positive selection are significantly enriched in functional categories related to salt stress. Some of these genes, and others within the same categories, are significantly upregulated under salt stress relative to their expression in another salt-sensitive poplar. Our results provide an important background for understanding tree adaptation to salt stress and facilitating the genetic improvement of cultivated poplars for saline soils.
|
|
| 25. |
- Wang, Guilei, et al.
(författare)
-
Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors
- 2017
-
Ingår i: Nanoscale Research Letters. - : Springer. - 1931-7573 .- 1556-276X. ; 12
-
Tidskriftsartikel (refereegranskat)abstract
- In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1-xGex growth (0.35 <= x <= 0.40) with boron concentration of 1-3 x 10(20) cm(-3) was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-resolution x-ray diffraction (HRXRD) and energy dispersive spectrometer (EDS) measurement data provided the key information about Ge profile in the transistor structure. The induced strain by SiGe layers was directly measured by x-ray on the array of transistors. In these measurements, the boron concentration was determined from the strain compensation of intrinsic and boron-doped SiGe layers. Finally, the characteristic of transistors were measured and discussed showing good device performance.
|
|
