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Träfflista för sökning "WFRF:(Manolescu A) "

Sökning: WFRF:(Manolescu A)

  • Resultat 1-18 av 18
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  • Helgadottir, Anna, et al. (författare)
  • The same sequence variant on 9p21 associates with myocardial infarction, abdominal aortic aneurysm and intracranial aneurysm
  • 2008
  • Ingår i: Nature Genetics. - : Springer Science and Business Media LLC. - 1546-1718 .- 1061-4036. ; 40:2, s. 217-224
  • Tidskriftsartikel (refereegranskat)abstract
    • Recently, two common sequence variants on 9p21, tagged by rs10757278-G and rs10811661-T, were reported to be associated with coronary artery disease (CAD)(1-4) and type 2 diabetes (T2D)(5-7), respectively. We proceeded to further investigate the contributions of these variants to arterial diseases and T2D. Here we report that rs10757278-G is associated with, in addition to CAD, abdominal aortic aneurysm (AAA; odds ratio (OR) 1.31, P = 1.2 x 10(-12)) and intracranial aneurysm (OR = 1.29, P = 2.5 x 10(-6)), but not with T2D. This variant is the first to be described that affects the risk of AAA and intracranial aneurysm in many populations. The association of rs10811661-T to T2D replicates in our samples, but the variant does not associate with any of the five arterial diseases examined. These findings extend our insight into the role of the sequence variant tagged by rs10757278-G and show that it is not confined to atherosclerotic diseases.
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6.
  • Slav, A., et al. (författare)
  • Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers
  • 2017
  • Ingår i: 2017 International Semiconductor Conference (CAS). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781509039852 ; , s. 63-66
  • Konferensbidrag (refereegranskat)abstract
    • The photosensing properties related to the structure of GeSi/TiO2 multilayers prepared under different conditions are studied. TiO2 cap/(GeSi/TiO2)2 multilayers (ML) were deposited by magnetron sputtering (MS) and annealed by rapid thermal annealing. Trilayers of TiO2 cap/GeSi/TiO2 (TL) were also deposited using reactive high power impulse MS (HiPIMS) for TiO2 layers and dc MS for the GeSi layer. For TL samples a two-step annealing was employed, one before and the second after depositing TiO2 cap. Structure and morphology characterization (X-ray diffraction, scanning and transmission electron microscopy) was carried out and photocurrent measurements (voltage dependences, spectral curves) were performed. The annealed ML samples are formed of GeSi NCs with 5-10 nm sizes, while in the annealed TL samples, the GeSi NCs are larger (20-30 nm). These morphologies determine the multilayers photosensing properties in VIS-NIR of ML structures and in UV in TL ones, respectively.
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  • Amundadottir, Laufey T., et al. (författare)
  • A common variant associated with prostate cancer in European and African populations
  • 2006
  • Ingår i: Nature Genetics. - DeCODE Genet, IS-101 Reykjavik, Iceland. Univ Iceland, Landspitali Hosp, Dept Pathol, IS-101 Reykjavik, Iceland. Univ Iceland, Landspitali Hosp, Dept Urol, IS-101 Reykjavik, Iceland. Univ Michigan, Dept Human Genet, Ann Arbor, MI 48109 USA. Orebro Univ Hosp, Dept Urol & Clin Med, Orebro, Sweden. Karolinska Inst, Dept Med Epidemiol & Biostat, SE-17177 Stockholm, Sweden. Univ Michigan, Dept Urol, Ann Arbor, MI 48109 USA. Northwestern Univ, Feinberg Sch Med, Dept Urol, Chicago, IL 60611 USA. Washington Univ, Sch Med, Dept Psychiat, St Louis, MO 63110 USA. Univ Chicago, Dept Human Genet, Chicago, IL 60637 USA. Univ Michigan, Dept Internal Med, Ann Arbor, MI 48109 USA. : Springer Science and Business Media LLC. - 1061-4036 .- 1546-1718. ; 38:6, s. 652-658
  • Tidskriftsartikel (refereegranskat)abstract
    • With the increasing incidence of prostate cancer, identifying common genetic variants that confer risk of the disease is important. Here we report such a variant on chromosome 8q24, a region initially identified through a study of Icelandic families. Allele -8 of the microsatellite DG8S737 was associated with prostate cancer in three case-control series of European ancestry from Iceland, Sweden and the US. The estimated odds ratio (OR) of the allele is 1.62 (P = 2.7 x 10(-11)). About 19% of affected men and 13% of the general population carry at least one copy, yielding a population attributable risk (PAR) of approximately 8%. The association was also replicated in an African American case-control group with a similar OR, in which 41% of affected individuals and 30% of the population are carriers. This leads to a greater estimated PAR (16%) that may contribute to higher incidence of prostate cancer in African American men than in men of European ancestry.
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  • Sultan, M. T., et al. (författare)
  • Enhanced Photoconductivity of SIGE-Trilayer Stack by Retrenching Annealing Conditions
  • 2018
  • Ingår i: 2018 International Semiconductor Conference (CAS). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781538644829 ; , s. 61-64
  • Konferensbidrag (refereegranskat)abstract
    • We studied the effect of short term furnace annealing over the photoconductive properties of tristacked layer i.e. TiO2/(SiGe/TiO2)3. The structure was prepared by depositing alternate layers of TiO2 and SiGe films, using direct-current magnetron sputtering technique. A transmission electron microscopy and grazing incidence spectroscopy was used to analyze the morphology of the structure. Photoconductive properties were studied by measuring photocurrent spectra at different applied voltages and temperatures. Tristack layers were obtained with 5-10 nm SiGe nanocrystals (NCs) by annealing at 600 °C for 5 min. No sign of SiO2 formation was found inside stacked layers. A maximum in the photocurrent spectra was observed at 994 nm at 300 K but it red-shifted gradually to 1045 nm with decrease in temperature to 100 K. This transition in peak maxima is attributed to SiGe NCs, due to lattice vibration and to contribution of non-radiative recombination at low temperatures.
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11.
  • Thorgeirsson, Thorgeir E, et al. (författare)
  • A variant associated with nicotine dependence, lung cancer and peripheral arterial disease
  • 2008
  • Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 452:7187, s. 9-638
  • Tidskriftsartikel (refereegranskat)abstract
    • Smoking is a leading cause of preventable death, causing about 5 million premature deaths worldwide each year(1,2). Evidence for genetic influence on smoking behaviour and nicotine dependence (ND)(3-8) has prompted a search for susceptibility genes. Furthermore, assessing the impact of sequence variants on smoking-related diseases is important to public health(9,10). Smoking is the major risk factor for lung cancer (LC)(11-14) and is one of the main risk factors for peripheral arterial disease (PAD)(15-17). Here we identify a common variant in the nicotinic acetylcholine receptor gene cluster on chromosome 15q24 with an effect on smoking quantity, ND and the risk of two smoking- related diseases in populations of European descent. The variant has an effect on the number of cigarettes smoked per day in our sample of smokers. The same variant was associated with ND in a previous genomewide association study that used low- quantity smokers as controls(18,19), and with a similar approach we observe a highly significant association with ND. A comparison of cases of LC and PAD with population controls each showed that the variant confers risk of LC and PAD. The findings provide a case study of a gene - environment interaction(20), highlighting the role of nicotine addiction in the pathology of other serious diseases.
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12.
  • Erlingsson, S. I., et al. (författare)
  • Thermoelectric current in topological insulator nanowires with impurities
  • 2018
  • Ingår i: Beilstein Journal of Nanotechnology. - : Beilstein-Institut Zur Forderung der Chemischen Wissenschaften. - 2190-4286. ; 9:1, s. 1156-1161
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper we consider charge current generated by maintaining a temperature difference over a nanowire at zero voltage bias. For topological insulator nanowires in a perpendicular magnetic field the current can change sign as the temperature of one end is increased. Here we study how this thermoelectric current sign reversal depends on the magnetic field and how impurities affect the size of the thermoelectric current. We consider both scalar and magnetic impurities and show that their influence on the current are quite similar, although the magnetic impurities seem to be more effective in reducing the effect. For moderate impurity concentration the sign reversal persists.
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  • Sultan, M. T., et al. (författare)
  • Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO2 matrix
  • 2019
  • Ingår i: Nanotechnology. - : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 30:36
  • Tidskriftsartikel (refereegranskat)abstract
    • SiGe nanoparticles dispersed in a dielectric matrix exhibit properties different from those of bulk and have shown great potential in devices for application in advanced optoelectronics. Annealing is a common fabrication step used to increase crystallinity and to form nanoparticles in such a system. A frequent downside of such annealing treatment is the formation of insulating SiO2 layer at the matrix/SiGe interface, degrading the optical properties of the structure. An annealing process that could bypass this downside would therefore be of great interest. In this work, a short-time furnace annealing of a SiGe/TiO2 system is applied to obtain SiGe nanoparticles without formation of the undesired SiO2 layer between the dielectric matrix (TiO2) and SiGe. The structures were prepared by depositing alternate layers of TiO2 and SiGe films, using direct-current magnetron sputtering technique. A wide range spectral response with a response-threshold up to similar to 1300 nm was obtained, accompanied with an increase in photo-response of more than two-orders of magnitude. Scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy and grazing incidence x-ray diffraction were used to analyze the morphological changes in respective structures. Photoconductive properties were studied by measuring photocurrent spectra using applied dc-voltages at various temperatures.
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15.
  • Sultan, M. T., et al. (författare)
  • Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation
  • 2019
  • Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 479, s. 403-409
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigate the effect of room-temperature hydrogen-plasma treatment on the photoconductivity of SiGe nanoparticles sandwiched within SiO 2 layers. An increase in photocurrent intensity of more than an order magnitude is observed after the hydrogen plasma treatment. The enhancement is attributed to neutralization of dangling bonds at the nanoparticles and to passivation of nonradiative defects in the oxide matrix and at SiGe/matrix interfaces. We find that increasing the partial pressure of hydrogen to pressures where H 3 + and H 2 + were the dominant ions results in increased photocurrent.
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16.
  • Sultan, M. T., et al. (författare)
  • Obtaining SiGe nanocrystallites between crystalline TiO2 layers by HiPIMS without annealing
  • 2020
  • Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 511
  • Tidskriftsartikel (refereegranskat)abstract
    • Formation of SiGe nanocrystals in an oxide matrix via deposition and subsequent annealing is a widely applied approach as it gives good control over optical properties by varying the Ge atomic fraction, the size, shape and crystallinity of the nanocrystals. A common drawback of annealing is a strain relaxation in the structure creating dislocations, point defects, dangling bonds, Ge clustering and altered interface morphology. All these phenomena are well-known to degrade the optoelectronic and electrical properties of the structure. As a proof of concept, in this study we have utilized a modern technique of high impulse power magnetron sputtering (HiPIMS) to obtain a crystalline TiO2/SiGe/TiO2 structure without any pre-/post-annealing. It is furthermore demonstrated how a control of the nano-crystallite size is obtained by altering the HiPIMS discharge power alone. Grazing incidence X-ray diffraction analysis was carried out for the structural characterization, while photocurrent measurements were utilized to access the role of TiO2 structural morphology over interface integrity in determining spectral feature and sensitivity. An increase of 1 - 2 orders magnitude in spectral intensity was achieved for as-grown structures fabricated via HiPIMS in comparison to annealed structure, sputtered with conventional direct current magnetron sputtering.
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17.
  • Sultan, M. T., et al. (författare)
  • Photoluminescence study of Si1-xGex nanoparticles in various oxide matrices
  • 2021
  • Ingår i: 2021 International Semiconductor Conference (Cas). - : Institute of Electrical and Electronics Engineers (IEEE). ; , s. 21-24
  • Konferensbidrag (refereegranskat)abstract
    • We investigate the photoluminescence properties of structures comprising of Si1-xGex nanoparticles (NPs) within SiO2, GeO2, TiO2 and Ta2O5 oxide matrices. Of the investigated structures, it was observed that the structures with GeO2 and TiO2 matrices provide increased spectral response (at similar to 907 and 844 nm respectively) and increased PL intensity. The improved PL characteristic have been attributed to increased diffusion barrier against oxygen which otherwise would result in formation of unwanted oxide at the film-oxide interface, thereby deteriorating the optical properties.
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18.
  • Sultan, M. T., et al. (författare)
  • The Effect of H2/Ar Plasma Treatment over Photoconductivity of Sige Nanoparticles Sandwiched between Silicon Oxide Matrix
  • 2018
  • Ingår i: Proceedings of the International Semiconductor Conference, CAS. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781538644829 ; , s. 257-260
  • Konferensbidrag (refereegranskat)abstract
    • The effect of room temperature hydrogen plasma treatment on the photoconductive properties of the SiO2 matrix containing SiGe nanoparticles is investigated. A considerable increase in photocurrent intensity is observed after plasma treatment. The increase is partly attributed to neutralization of dangling bonds around the nanoparticles and partly to passivation of non-radiative centers and defects in the matrix and at the nanoparticles-matrix interfaces.
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