| 1. |
- Johansson, Karl-Axel, et al.
(författare)
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The quality assurance process for the ARTSCAN head and neck study - a practical interactive approach for QA in 3DCRT and IMRT.
- 2008
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Ingår i: Radiotherapy and oncology : journal of the European Society for Therapeutic Radiology and Oncology. - : Elsevier BV. - 0167-8140 .- 1879-0887. ; 87:2, s. 290-9
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Tidskriftsartikel (refereegranskat)abstract
- AIM: This paper describes the quality assurance (QA) work performed in the Swedish multicenter ARTSCAN (Accelerated RadioTherapy of Squamous cell CArcinomas in the head and Neck) trial to guarantee high quality in a multicenter study which involved modern radiotherapy such as 3DCRT or IMRT. MATERIALS AND METHODS: The study was closed in June 2006 with 750 randomised patients. Radiation therapy-related data for every patient were sent by each participating centre to the QA office where all trial data were reviewed, analysed and stored. In case of any deviation from the protocol, an interactive process was started between the QA office and the local responsible clinician and/or physicist to increase the compliance to the protocol for future randomised patients. Meetings and workshops were held on a regular basis for discussions on various trial-related issues and for the QA office to report on updated results. RESULTS AND DISCUSSION: This review covers the 734 patients out of a total of 750 who had entered the study. Deviations early in the study were corrected so that the overall compliance to the protocol was very high. There were only negligible variations in doses and dose distributions to target volumes for each specific site and stage. The quality of the treatments was high. Furthermore, an extensive database of treatment parameters was accumulated for future dose-volume vs. endpoint evaluations. CONCLUSIONS: This comprehensive QA programme increased the probability to draw firm conclusions from our study and may serve as a concept for QA work in future radiotherapy trials where comparatively small effects are searched for in a heterogeneous tumour population.
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| 2. |
- Moberg, Christina, et al.
(författare)
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De unga gör helt rätt när de stämmer staten
- 2022
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Ingår i: Aftonbladet. - 1103-9000.
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Tidskriftsartikel (populärvet., debatt m.m.)abstract
- 1 620 forskare och lärare i forskarvärlden: Vi ställer oss bakom Auroras klimatkrav
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| 3. |
- Persson, Anton E.O., et al.
(författare)
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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
- 2020
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 116:6
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Tidskriftsartikel (refereegranskat)abstract
- Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.
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| 4. |
- Söderberg, Stefan, et al.
(författare)
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MEASURES OF WAIST AND HIP MODIFY SEX-SPECIFIC ASSOCIATIONS BETWEEN BODY MASS INDEX AND PREVALENCE OF CORONARY ARTERY CALCIFICATION IN OPPOSITE DIRECTIONS
- 2019
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Ingår i: Journal of the American College of Cardiology. - : ELSEVIER SCIENCE INC. - 0735-1097 .- 1558-3597. ; 73:9, s. 13-13
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Background: Obesity is associated with increased risk of cardiovascular disease. However, there is still a debate whether accumulation of fat in certain depots modifies this risk. Using data from the CArdioPulmonary bioImage Study (SCAPIS), we investigated if anthropometric measurements of obesity (waist and hip) modifies the risk of coronary artery calcification. Methods: In the first 15,810 participants in SCAPIS (mean age 58 years, 52% women), data on coronary artery calcification score (CACS) and anthropometry were recorded and traditional cardiovascular risk factors were measured. Body mass index (BMI) was categorized as; <25, 25-30, 30-35 and >35 kg/m2 , quartiles of waist and hip circumferences were constructed within each BMI category and compared using the lowest quartile as reference. Results were adjusted for site, age, smoking and diabetes status. Results: Obesity (BMI >30 kg/m2 ) was found in 21.9% of men and in 20.5% of women. In both sexes the odds ratio (OR) for CACS >0 increased with increasing BMI categories: comparing <25 and >35 kg/m2 , OR = 2.1 (95% CI: 1.6-2.7) for men and OR = 1.4 (1.2-1.8) for women. In addition, increasing quartiles of waist significantly increased the prevalence of CACS >0 for men [p = 0.05; OR = 1.2 (1.0-1.4) for highest quartile] and women [p = 0.005; OR = 1.3 (1.1-1.5)] while increasing quartiles of hip significantly decreased the prevalence for men [p = 0.005; OR = 0.8 (0.6-0.9)] and women [p = 0.04; OR = 0.8 (0.7-0.9)]. Data on education level and physical activity did not affect the model. Conclusion: Increased BMI is associated with increased prevalence of coronary artery calcification and the distribution of fat modifies this risk. Our results suggest that gluteofemoral adipose tissue (hip) counteracts the negative effects associated with BMI and abdominal adipose tissue (waist).
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| 5. |
- Adolfsson, Karl, et al.
(författare)
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Fluorescent Nanowire Heterostructures as a Versatile Tool for Biology Applications
- 2013
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:10, s. 4728-4732
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Tidskriftsartikel (refereegranskat)abstract
- Nanowires are increasingly used in biology, as sensors, as injection devices, and us model systems for toxicity studies. Currently, in situ visualization of nanowires in biological media is done using organic dyes, which a;:e prone to photobleaching, or using microscopy methods which either yield poor resolution or require a sophisticated setup. Here we show that inherently fluorescent nanowire axial heterostructnies c:an be used to localize and identify nanowires in cells and tissue; By synthesizing GaP GaInP nanowire heterostructures, with nonfluorescent GaP segments and fluorescent GaInP segments, we created a barcode labeling system enabling the distinction of the nanowire morphological and chemical properties using fluorescence microscopy. The GaInP photoluminescence stability, combined with the fact that the nanowires can be coated with different materials while retaining their fluorescence, make these nanowires promising tools for biological and nanotoxicological studies.
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| 6. |
- Berg, Martin, et al.
(författare)
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Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
- 2016
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 37:8, s. 966-969
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Tidskriftsartikel (refereegranskat)abstract
- Vertical InAs nanowire transistors are fabricated on Si using a gate-last method, allowing for lithography-based control of the vertical gate length. The best devices combine good ON- and OFF-performance, exhibiting an ON-current of 0.14 mA/μm, and a sub-threshold swing of 90 mV/dec at 190 nm LG. The device with the highest transconductance shows a peak value of 1.6 mS/μm. From RF measurements, the border trap densities are calculated and compared between devices fabricated using the gate-last and gate-first approaches, demonstrating no significant difference in trap densities. The results thus confirm the usefulness of implementing digital etching in thinning down the channel dimensions.
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| 7. |
- Berg, Martin, et al.
(författare)
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InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
- 2014
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:48
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Tidskriftsartikel (refereegranskat)abstract
- Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a [Formula: see text] cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.
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| 8. |
- Berg, Martin, et al.
(författare)
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Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
- 2016
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Ingår i: Technical Digest - International Electron Devices Meeting, IEDM. - 9781467398930 ; 2016-February
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Konferensbidrag (refereegranskat)abstract
- In this work, we present a novel self-aligned gate-last fabrication process for vertical nanowire metal-oxide-semiconductor field-effect transistors. The fabrication method allows for exposure dose-defined gate lengths and a local diameter reduction of the intrinsic channel segment, while maintaining thicker highly doped access regions. Using this process, InAs nanowire transistors combining good on-and off-performance are fabricated demonstrating Q = gm,max/SS = 8.2, which is higher than any previously reported vertical nanowire MOSFET.
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| 9. |
- Berg, Martin, et al.
(författare)
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Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
- 2014
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Ingår i: 26th International Conference on Indium Phosphideand Related Materials (IPRM). - 1092-8669.
-
Konferensbidrag (refereegranskat)abstract
- We have fabricated single balanced down-conversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 mu m. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.
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| 10. |
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| 11. |
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| 12. |
- Egard, Mikael, et al.
(författare)
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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:3, s. 369-371
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Tidskriftsartikel (refereegranskat)abstract
- We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.
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| 13. |
- Egard, Mikael, et al.
(författare)
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Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
- 2010
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 10:3, s. 809-812
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Tidskriftsartikel (refereegranskat)abstract
- In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.
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| 14. |
- Gomez-Carretero, Salvador, et al.
(författare)
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Salmonella Biofilm Modulation with Electrically Conducting Polymers
- 2014
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Biofilms are ubiquitous in many human activities, constituting a threat or an advantage depending on the context of application. It is therefore of great interest to obtain new materials to study and control how biofilms are formed. Here, heparin and DBS (dodecylbenzenesulfonate) are incorporated as counter-ions to the PEDOT (poly(3,4-ethylenedioxythiophene)) backbone, forming conducting polymer thin-films. Polymer synthesis is based on electrodeposition, allowing for the adjustment, during fabrication, of properties like charge and hydrophobicity, important in bacterial adhesion. The electrochemical redox state of the polymer is of fundamental importance in Salmonella enterica Serovar Typhimurium biofilm modulation. Oxidized composites show increased levels of biofilm growth compared to reduced and pristine polymer films. As a result, biofilm formation is modulated by the application of a low electric voltage. Moreover, biofilm morphology and topology are affected by both the electrochemical redox state and the incorporated counter-ion, making these materials a useful tool in biofilm engineering.
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| 15. |
- Gunnarsson, Frida, et al.
(författare)
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Comagotchi - a social toy
- 2001
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Ingår i: Reprints from the PCC Summer School.
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Konferensbidrag (refereegranskat)
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| 16. |
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| 17. |
- Kurdve, Martin, Dr, 1971-, et al.
(författare)
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Lead-Time Effect Comparison of Additive Manufacturing with Conventional Alternatives
- 2020
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Ingår i: Advances in Transdisciplinary Engineering at SPS2020. - : IOS Press BV. - 9781614994398 ; 13, s. 672-679
-
Konferensbidrag (refereegranskat)abstract
- This single case study used value stream mapping as input data to analyse alternatives for production of quenching tools in an on-site tool department of an automotive manufacturer. The existing manufacturing organised as a functional workshop was compared to the alternatives, adding an additive manufacturing cell or a conventional automated cell, with regards to lead-Time and needed process changes. The results indicate that lead-Time savings should not be the only reason for considering additive manufacturing. When it is beneficial for design and product functionality improvements, however, lead time improvements may give a contribution to the business case. © 2020 The authors
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| 18. |
- Li, Zhen, et al.
(författare)
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Cellular traction forces : a useful parameter in cancer research
- 2017
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Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 9:48, s. 19039-19044
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Tidskriftsartikel (refereegranskat)abstract
- The search for new cancer biomarkers is essential for fundamental research, diagnostics, as well as for patient treatment and monitoring. Whereas most cancer biomarkers are biomolecules, an increasing number of studies show that mechanical cues are promising biomarker candidates. Although cell deformability has been shown to be a possible cancer biomarker, cellular forces as cancer biomarkers have been left largely unexplored. Here, we measure traction forces of cancer and normal-like cells at high spatial resolution using a robust method based on dense vertical arrays of nanowires. A force map is created using automated image analysis based on the localization of the fluorescent tips of the nanowires. We show that the force distribution and magnitude differ between MCF7 breast cancer cells and MCF10A normal-like breast epithelial cells, and that monitoring traction forces can be used to investigate the effects of anticancer drugs.
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| 19. |
- Lind, Erik, et al.
(författare)
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High Frequency Performance of Vertical InAs Nanowire MOSFET
- 2010
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Ingår i: 2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm). - 1092-8669. - 9781424459193
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Konferensbidrag (refereegranskat)abstract
- We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.
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| 20. |
- Lind, Johanna, et al.
(författare)
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Reduced functional brain activity response in cognitively intact apolipoprotein E ε4 carriers
- 2006
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Ingår i: Brain. - : Oxford University Press. - 0006-8950 .- 1460-2156. ; 129:5, s. 1240-1248
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Tidskriftsartikel (refereegranskat)abstract
- The apolipoprotein E epsilon4 (APOE epsilon4) is the main known genetic risk factor for Alzheimer's disease. Genetic assessments in combination with other diagnostic tools, such as neuroimaging, have the potential to facilitate early diagnosis. In this large-scale functional MRI (fMRI) study, we have contrasted 30 APOE epsilon4 carriers (age range: 49-74 years; 19 females), of which 10 were homozygous for the epsilon4 allele, and 30 non-carriers with regard to brain activity during a semantic categorization task. Test groups were closely matched for sex, age and education. Critically, both groups were cognitively intact and thus symptom-free of Alzheimer's disease. APOE epsilon4 carriers showed reduced task-related responses in the left inferior parietal cortex, and bilaterally in the anterior cingulate region. A dose-related response was observed in the parietal area such that diminution was most pronounced in homozygous compared with heterozygous carriers. In addition, contrasts of processing novel versus familiar items revealed an abnormal response in the right hippocampus in the APOE epsilon4 group, mainly expressed as diminished sensitivity to the relative novelty of stimuli. Collectively, these findings indicate that genetic risk translates into reduced functional brain activity, in regions pertinent to Alzheimer's disease, well before alterations can be detected at the behavioural level.
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| 21. |
- Mamidala, Saketh, Ram, et al.
(författare)
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A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
- 2022
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Ingår i: IEEE Silicon Nanoelectronics Workshop (SNW). - 9781665459792 ; , s. 1-2
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Konferensbidrag (refereegranskat)abstract
- Complete 4F2 vertical nanowire (VNW) 1T1R cells with 106 cycles switching endurance and with a demonstrated capability of performing Boolean logic are fabricated and characterized in cross-point arrays. The performance of the vertical 1T1R cell is benefited from using the same III-V/high- k interface both for the vertical GAA MOSFET selector as well as the ReRAM. In this paper, we also compare the InAs nanowire implementation to a nanowire with an InGaAs top segment to utilize the relatively larger bandgap of InGaAs to reduce sneak-path leakage currents.
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| 22. |
- Mamidala, Saketh, Ram, et al.
(författare)
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Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
- 2021
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Ingår i: 2021 Device Research Conference (DRC). - 9781665412407 - 9781665429580
-
Konferensbidrag (refereegranskat)abstract
- Non-volatile resistive-random-access-memories (RRAMs), which are highly scalable, cost-efficient and fast, are needed to meet the future computational needs beyond the traditional von-Neumann architecture. Oxygen vacancy RRAMs in particular have been demonstrated to operate at nanosecond programming ranges with low voltages as well as being integrated in dense cross-point arrays [1] . ITO/HfO 2 based RRAMs have emerged as a promising material stack due to its ultra-low switching voltages, self-compliance properties and the transparency of ITO that extends the material stack’s applications into display/wearable electronics [2] . As the different RRAM technologies are reaching maturity, scaling down the oxide thicknesses is now becoming vital for compatibility with dense 3D integration as projected by the IRDS 2020 [3] . We report that, when operated at relevant current levels (sub 100 µA), the filament integrity of ITO/HfO2 RRAM with a thin high-k oxide (3 nm) can be controlled depending on the deposition conditions, where a thermal ALD (TALD) process results in a stable filament formation as compared to a plasma enhanced ALD (PEALD) process used for depositing HfO2 . Our results further indicate that the RRAM RESET is more gradual for the TALD (oxygen deficient) HfO2 as compared to the abrupt switching behavior for the PEALD (oxygen rich) HfO2 .
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| 23. |
- Mamidala, Saketh, Ram, et al.
(författare)
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High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
- 2021
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Ingår i: Nature Electronics. - : Springer Science and Business Media LLC. - 2520-1131. ; , s. 914-914
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Tidskriftsartikel (refereegranskat)abstract
- In-memory computing can be used to overcome the von Neumann bottleneck—the need to shuffle data between separate memory and computational units—and help improve computing performance. Co-integrated vertical transistor selectors (1T) and resistive memory elements (1R) in a 1T1R configuration offer advantages of scalability, speed and energy efficiency in current mass storage applications, and such 1T1R cells could also be potentially used for in-memory computation architectures. Here we show that a vertical transistor and resistive memory can be integrated onto a single vertical indium arsenide nanowire on silicon. The approach relies on an interface between the III–V semiconductor nanowire and a high-κ dielectric (hafnium oxide), which provides an oxide layer that can operate either as a vertical transistor selector or a high-performance resistive memory. The resulting 1T1R cells allow Boolean logic operations to be implemented in a single vertical nanowire with a minimal area footprint
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| 24. |
- Mamidala, Saketh, Ram, et al.
(författare)
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Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
- 2020
-
Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 41:9, s. 1432-1435
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Tidskriftsartikel (refereegranskat)abstract
- III-V vertical nanowire MOSFETs (VNW-FETs) have the potential to extend Moore’s law owing to their excellent material properties. To integrate highly scaled memory cells coupled with high performance selectors at minimal memory cell area, it is attractive to integrate low-power resistive random access memory (RRAM) cells directly on to III-V VNW-FETs. In this work, we report the experimental demonstration of successful RRAM integration with III-V VNW-FETs. The combined use of VNW-FET drain metal electrode and the RRAM bottom electrode reduces the process complexity and maintains material compatibility. The vertical nanowire geometry allows the RRAM cell area to be aggressively scaled down to 0.01 μm2 enabling realization of dense memory (1T1R) cross-point arrays on silicon.
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| 25. |
- Moubah, Reda, et al.
(författare)
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Discrete Layer-by-Layer Magnetic Switching in Fe/MgO(001) Superlattices
- 2016
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Ingår i: Physical Review Applied. - : American physical society. - 2331-7019. ; 5:4
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Tidskriftsartikel (refereegranskat)abstract
- We report on a discrete layer-by-layer magnetic switching in Fe/MgO superlattices driven by an antiferromagnetic interlayer exchange coupling. The strong interlayer coupling is mediated by tunneling through MgO layers with thicknesses up to at least 1.8 nm, and the coupling strength varies with MgO thickness. Furthermore, the competition between the interlayer coupling and magnetocrystalline anisotropy stabilizes both 90 degrees and 180 degrees periodic alignment of adjacent layers throughout the entire superlattice. The tunable layer-by-layer switching, coupled with the giant tunneling magnetoresistance of Fe/MgO/Fe junctions, is an appealing combination for three-dimensional spintronic memories and logic devices.
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