| 1. |
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| 2. |
- Chen, Ding-Yuan, 1991, et al.
(författare)
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Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
- 2023
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing Ltd. - 1361-6641 .- 0268-1242. ; 38:10
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Tidskriftsartikel (refereegranskat)abstract
- This study presents a novel approach to forming low-resistance ohmic contacts for AlGaN/GaN HEMTs. The optimized contacts exhibit an outstanding contact resistance of approximately 0.15 & omega;& BULL;mm. This is achieved by firstly recessing the barrier of the heterostructure to a depth beyond the channel. In this way, the channel region is exposed on the sidewall of the recess. The coverage of the Ti/Al/Ti ohmic metalization on the sidewall is ensured through tilting of the sample during evaporation. The annealing process is performed at a low temperature of 550 & DEG;C. The approach does not require precise control of the recess etching. Furthermore, the method is directly applicable to most barrier designs in terms of thickness and Al-concentration. The impact of recessed sidewall angle, thickness and ratio of Ti and Al layers, and the annealing procedure are investigated. Structural and chemical analyses of the interface between the ohmic contacts and epi-structure indicate the formation of ohmic contacts by the extraction of nitrogen from the epi-structure. The approach is demonstrated on HEMT-structures with two different barrier designs in terms of Al-concentration and barrier thickness. The study demonstrate large process window in regard to recess depth and duration of the annealing as well as high uniformity of the contact resistance across the samples, rendering the approach highly suitable for industrial production processes.
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| 3. |
- Ding Yuan, Chen, 1991, et al.
(författare)
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Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
- 2022
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 37:3
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Tidskriftsartikel (refereegranskat)abstract
- The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition (LPCVD ) is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 min) were compared in terms of interface properties and device performance. A reduction of oxygen (O) at the interface between SiN and epi-structure is detected by scanning transmission electron microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements in the sample subjected to 10 min of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9% (compared to 16% for the untreated sample), which is attributed to the reduction of O at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 min significantly improves the current dispersion uniformity from 14.5% to 1.9%. The reduced trapping effects result in a high output power of 3.4 W mm(-1) at 3 GHz (compared to 2.6 W mm(-1) for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before LPCVD of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.
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| 4. |
- Gogova, Daniela, et al.
(författare)
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Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVD
- 2022
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226. ; 12:5, s. 055022-055022
-
Tidskriftsartikel (refereegranskat)abstract
- The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and highperformance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth ofβ-Ga2O3. Epitaxial β-Ga2O3 layers at high growth rates (above 1 μm/h), at low reagent flows, and at reduced growth temperatures(740 ○C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. Thehot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial β-Ga2O3 layers are demonstrated with a 201 ¯rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (201) ¯ β-Ga2O3 substrates, indicative ofsimilar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be furtherexplored for the fabrication of β-Ga2O3
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| 5. |
- Gogova, Daniela, 1967-, et al.
(författare)
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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
- 2022
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226. ; 12:5
-
Tidskriftsartikel (refereegranskat)abstract
- The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of beta-Ga2O3. Epitaxial beta-Ga2O3 layers at high growth rates (above 1 mu m/h), at low reagent flows, and at reduced growth temperatures (740 degrees C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The hot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial beta-Ga2O3 layers are demonstrated with a 201 rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (201) beta-Ga2O3 substrates, indicative of similar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be further explored for the fabrication of beta-Ga2O3.
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| 6. |
- Gustafsson, Anders, et al.
(författare)
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Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
- 2024
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Ingår i: Nanotechnology. - : IOP Publishing Ltd. - 0957-4484 .- 1361-6528. ; 35:25
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated the optical properties of heterostructured InGaN platelets aiming at red emission, intended for use as nano-scaled light-emitting diodes. The focus is on the presence of non-radiative emission in the form of dark line defects. We have performed the study using hyperspectral cathodoluminescence imaging. The platelets were grown on a template consisting of InGaN pyramids, flattened by chemical mechanical polishing. These templates are defect free, whereas the dark line defects are introduced in the lower barrier and tend to propagate through all the subsequent layers, as revealed by the imaging of different layers in the structure. We conclude that the dark line defects are caused by stacking mismatch boundaries introduced by multiple seeding and step bunching at the edges of the as-polished, dome shaped templates. To avoid these defects, we suggest that the starting material must be flat rather than dome shaped.
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| 7. |
- Gustafsson, Anders, et al.
(författare)
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Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
- 2024
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Ingår i: Nanotechnology. - : IOP Publishing Ltd. - 0957-4484 .- 1361-6528. ; 35:25
-
Tidskriftsartikel (refereegranskat)abstract
- We have investigated the optical properties of heterostructured InGaN platelets aiming at red emission, intended for use as nano-scaled light-emitting diodes. The focus is on the presence of non-radiative emission in the form of dark line defects. We have performed the study using hyperspectral cathodoluminescence imaging. The platelets were grown on a template consisting of InGaN pyramids, flattened by chemical mechanical polishing. These templates are defect free, whereas the dark line defects are introduced in the lower barrier and tend to propagate through all the subsequent layers, as revealed by the imaging of different layers in the structure. We conclude that the dark line defects are caused by stacking mismatch boundaries introduced by multiple seeding and step bunching at the edges of the as-polished, dome shaped templates. To avoid these defects, we suggest that the starting material must be flat rather than dome shaped.
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| 8. |
- Johansson, Karl-Axel, et al.
(författare)
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The quality assurance process for the ARTSCAN head and neck study - a practical interactive approach for QA in 3DCRT and IMRT.
- 2008
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Ingår i: Radiotherapy and oncology : journal of the European Society for Therapeutic Radiology and Oncology. - : Elsevier BV. - 0167-8140 .- 1879-0887. ; 87:2, s. 290-9
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Tidskriftsartikel (refereegranskat)abstract
- AIM: This paper describes the quality assurance (QA) work performed in the Swedish multicenter ARTSCAN (Accelerated RadioTherapy of Squamous cell CArcinomas in the head and Neck) trial to guarantee high quality in a multicenter study which involved modern radiotherapy such as 3DCRT or IMRT. MATERIALS AND METHODS: The study was closed in June 2006 with 750 randomised patients. Radiation therapy-related data for every patient were sent by each participating centre to the QA office where all trial data were reviewed, analysed and stored. In case of any deviation from the protocol, an interactive process was started between the QA office and the local responsible clinician and/or physicist to increase the compliance to the protocol for future randomised patients. Meetings and workshops were held on a regular basis for discussions on various trial-related issues and for the QA office to report on updated results. RESULTS AND DISCUSSION: This review covers the 734 patients out of a total of 750 who had entered the study. Deviations early in the study were corrected so that the overall compliance to the protocol was very high. There were only negligible variations in doses and dose distributions to target volumes for each specific site and stage. The quality of the treatments was high. Furthermore, an extensive database of treatment parameters was accumulated for future dose-volume vs. endpoint evaluations. CONCLUSIONS: This comprehensive QA programme increased the probability to draw firm conclusions from our study and may serve as a concept for QA work in future radiotherapy trials where comparatively small effects are searched for in a heterogeneous tumour population.
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| 9. |
- Knight, Sean Robert, et al.
(författare)
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Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
- 2023
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Ingår i: Journal of Applied Physics. - : American Institute of Physics Inc.. - 0021-8979 .- 1089-7550. ; 134:18
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Tidskriftsartikel (refereegranskat)abstract
- Al xGa 1−xN/GaN high-electron-mobility transistor (HEMT) structures are key components in electronic devices operating at gigahertz or higher frequencies. In order to optimize such HEMT structures, understanding their electronic response at high frequencies and room temperature is required. Here, we present a study of the room temperature free charge carrier properties of the two-dimensional electron gas (2DEG) in HEMT structures with varying Al content in the Al xGa 1−xN barrier layers between x=0.07 and x=0.42. We discuss and compare 2DEG sheet density, mobility, effective mass, sheet resistance, and scattering times, which are determined by theoretical calculations, contactless Hall effect, capacitance-voltage, Eddy current, and cavity-enhanced terahertz optical Hall effect (THz-OHE) measurements using a low-field permanent magnet (0.6 T). From our THz-OHE results, we observe that the measured mobility reduction from x=0.13 to x=0.42 is driven by the decrease in 2DEG scattering time, and not the change in effective mass. For x<0.42, the 2DEG effective mass is found to be larger than for electrons in bulk GaN, which in turn, contributes to a decrease in the principally achievable mobility. From our theoretical calculations, we find that values close to 0.3 m0 can be explained by the combined effects of conduction band nonparabolicity, polarons, and hybridization of the electron wavefunction through penetration into the barrier layer.
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| 10. |
- Papamichail, Alexis, et al.
(författare)
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Mg-doping and free-hole properties of hot-wall MOCVD GaN
- 2022
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 131:18
-
Tidskriftsartikel (refereegranskat)abstract
- The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range (2.45 × 10 18 cm-3 up to 1.10 × 10 20 cm-3) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation, which provides a unified concept to explain the complexity of growth conditions impact on Mg acceptor incorporation and compensation. The results are analyzed in relation to the extended defects, revealed by scanning transmission electron microscopy, x-ray diffraction, and surface morphology, and in correlation with the electrical properties obtained by Hall effect and capacitance-voltage (C-V) measurements. This allows to establish a comprehensive picture of GaN:Mg growth by hot-wall MOCVD providing guidance for growth parameters optimization depending on the targeted application. We show that substantially lower H concentration as compared to Mg acceptors can be achieved in GaN:Mg without any in situ or post-growth annealing resulting in p-type conductivity in as-grown material. State-of-the-art p-GaN layers with a low resistivity and a high free-hole density (0.77 ω cm and 8.4 × 10 17 cm - 3, respectively) are obtained after post-growth annealing demonstrating the viability of hot-wall MOCVD for growth of power electronic device structures.
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| 11. |
- Persson, Axel, et al.
(författare)
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Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
- 2023
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 123:2
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Tidskriftsartikel (refereegranskat)abstract
- Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum well structure intended for nano-LEDs emitting red light and how their optical properties, measured with cathodoluminescence, relate to the corresponding atomic structure. Through a method of spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking mismatch boundaries intersect the quantum well in a pattern correlated with the observed diminished cathodoluminescence intensity. The results highlight the importance of avoiding stacking mismatch in small LED structures due to the relatively large region of non-radiative recombination caused by the mismatch boundaries.
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| 12. |
- Persson, Axel, et al.
(författare)
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Mg segregation at inclined facets of pyramidal inversion domains in GaN:Mg
- 2022
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Ingår i: Scientific Reports. - : Nature Portfolio. - 2045-2322. ; 12:1
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Tidskriftsartikel (refereegranskat)abstract
- Structural defects in Mg-doped GaN were analyzed using high-resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy. The defects, in the shape of inverted pyramids, appear at high concentrations of incorporated Mg, which also lead to a reduction in free-hole concentration in Mg doped GaN. Detailed analysis pinpoints the arrangement of atoms in and around the defects and verify the presence of a well-defined layer of Mg at all facets, including the inclined facets. Our observations have resulted in a model of the pyramid-shaped defect, including structural displacements and compositional replacements, which is verified by image simulations. Finally, the total concentration of Mg atoms bound to these defects were evaluated, enabling a correlation between inactive and defect-bound dopants.
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| 13. |
- Persson, Per-Axel, et al.
(författare)
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Enhanced thermal dissociation of optically excited C60 chains.
- 2000
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Ingår i: Europhysics letters. - : EDP Sciences. - 0295-5075 .- 1286-4854. ; 49:5, s. 631-636
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Tidskriftsartikel (refereegranskat)abstract
- The thermal dissociation of C60 polymers has been studied using Raman scattering. The measured dissociation rate depends on the intensity of the 1064 nm NIR excitation, showing that i) the band gap is smaller than 1.17 eV and ii) a radiation-enhanced thermal breakdown path exists in addition to the "normal'' thermal breakdown mechanism. Quantum chemical calculations show that the energy barrier Ea for thermal breakdown is about 40% lower in the first (optically) excited state than in the ground state. This agrees well with the ratio between our radiation-enhanced value $E_{a} = (1.1 \pm 0.02)\,eV$ and values near 1.9 eV measured by purely thermal methods.
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| 14. |
- Persson, Per-Axel, et al.
(författare)
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High-pressure polymerized C60
- 1996
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Ingår i: Extended Abstracts of Carbon´96, European Carbon Conference, Newcastle-upon-Tyne 1996, volume 2. - : The British Carbon Group. ; , s. 746-747, s. 746-747
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 15. |
- Persson, Per-Axel, et al.
(författare)
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NMR and Raman characterization of pressure polymerized C-60
- 1996
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Ingår i: Chemical Physics Letters. - : Elsevier BV. - 0009-2614 .- 1873-4448. ; 258:5-6, s. 540-546
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Tidskriftsartikel (refereegranskat)abstract
- Bulk C60 has been treated at 1.1 GPa and 550–585 K, producing a dense insoluble material which on heating to above 600 K reverts to normal C60. Raman and IR studies on modified material show a large number of new lines, and the Raman pentagon pinch mode shifts from 1469 to 1458 cm−1 as on photopolymerization. MAS NMR shows one broadened line at the original C60 shift 144 ppm and a small peak at about 77 ppm due to the bridging carbons. None of the new resonances observed for C60 polymerized by other methods were observed. The results verify previously suggested polymeric structures where the fullerence cages are connected by four-membered rings.
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| 16. |
- Persson, Per-Axel, et al.
(författare)
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Physical properties of pressure polymerized C60
- 1996
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Ingår i: High Pressure Science and Technology. - Singapore : World Scientific. - 9810225474 ; , s. 716-718
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Konferensbidrag (refereegranskat)abstract
- The properties of C60 have been studied after treatment at high temperature and high pressure (1.1 GPa and 565 K for 2 h). The treated material is insoluble in organic solvents. We present results obtained in NMR and Raman studies and measured data for the specific heat and the thermal expansion. Our results show clearly that there are no covalent bonds and no molecular rotation, but suggest that the molecules are slightly deformed and held together by weak pi-type bonds.
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| 17. |
- Persson, Per-Axel, et al.
(författare)
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The physical properties of high-pressure polymerized C60
- 1997
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Ingår i: Journal of Physics and Chemistry of Solids, volume 58, issue 11. - : Elsevier B.V.. ; 58:11, s. 1881-1885
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Konferensbidrag (refereegranskat)abstract
- We have studied the structural, thermophysical, and spectroscopic properties of polymeric C60 obtained by high pressure treatment at pressures and temperatures near 1 GPa and 600 K. We present here a brief overview of our results for the structural and thermophysical properties and a more detailed report on recent results obtained by Raman spectroscopy on both thin films, polycrystalline, and single crystal material. The results presented include a comparison between Raman results for photopolymerized and pressure polymerized thin films and a preliminary estimate of the binding energy of polymeric C60.
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| 18. |
- Soldatov, Alexander, et al.
(författare)
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Pressure polymerized C60 : Raman and NMR studies
- 1996
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Ingår i: Fullerenes and Fullerene Nanostructures. - Singapore : World Scientific. - 9810228538 ; , s. 344-348
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Konferensbidrag (refereegranskat)abstract
- The properties of bulk C60 have been studied after treatment at 1.1 GPa and 550-585 K. The treated material is insoluble in both toluene and 1,2-dichlorobenzene. Raman spectroscopy on modified aterial shows a large number of new lines, and the Raman pentagon pinch mode (Ag2) shifts from 1469 to 1458 /cm as on photopolymerization. MAS NMR shows one broadened line at the original C60 shift 144 ppm and a small peak at about 77 ppm due to the bridging carbons. The results verify previous suggested polymeric structures where the fullerene cages are connected by four-membered rings.
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| 19. |
- Sundqvist, Bertil, et al.
(författare)
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Physical properties of pressure polymerized C60
- 1996
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Ingår i: Fullerenes: Recent Advances in the Chemistry and Physics of Fullerenes and Related Materials, volume 3. - Pennington, NJ : The Electrochemical Society. - 1566771625 ; , s. 1014-1028
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Konferensbidrag (refereegranskat)abstract
- We present in this paper an overview of the physical properties of the high pressure polymerized C60 phase commonly known as "soft fcc". This phase has been studied by several methods over wide ranges in temperature T and/or pressure, p. We present here experimental information about the specific heat capacity, the thermal expansion coefficient, the lattice structure, and the thermal conductivity, and we also show results obtained by NMR and Raman spectroscopy. All data presented agree with the accepted model that the individual molecules in this phase are covalently bound to form linear molecular chains. In particular, the NMR data show clearly the presence of covalent bonds, and the Raman data exhibit several new lines at very low energies connected with chain vibrations. Thermal conductivity data obtained during polymerization show both the time dependence of the process and that polymerization occurs at lower p and T than observed previously for this phase.
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| 20. |
- Sundqvist, Bertil, et al.
(författare)
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Structural and physical properties of pressure polymerized C60
- 1998
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Ingår i: Carbon, vol. 36 issue 5-6. - : Elsevier B.V.. ; 36:5-6, s. 657-660
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Konferensbidrag (refereegranskat)abstract
- We discuss the structural and dynamic properties of C60 polymerized under low-P, low-T conditions, and suggest that the disordered mixed orthorhombic-tetragonal-rhombohedral phases produced under these conditions arise from nucleation of molecular chains in random directions because of the quasi-free molecular rotation under standard reaction conditions in the fcc phase of C60. Polymerization in He gives results qualitatively different from those obtained in other media.
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| 21. |
- Sundqvist, Bertil, et al.
(författare)
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Structure and stability of pressure polymerized C60
- 2000
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Ingår i: Molecular Materials: Molecular Crystals and Liquid Crystals Section C, vol. 13. - : Overseas Publishers Association N.V.. ; 13:1-4, s. 117-122
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Konferensbidrag (refereegranskat)abstract
- We discuss the bond energy of the orthorhombic C60 polymer and the structure of the two-dimensional C60 polymers. For the orthorhombic polymer, measurements of the dissociation energy by different methods give results that differ by a factor of two. We show that optical excitations lead to a temporary weakening of the intermolecular bonds and optical measurements thus show a low apparent bond energy. We have also polymerized a single crystal of C60 into two-dimensional phases. X-ray diffraction studies of this crystal have enabled us to determine the stacking sequences of both the tetragonal and the rhombohedral structures.
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| 22. |
- Winter, Johannes, et al.
(författare)
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Charge transfer in alkali-metal-doped polymeric fullerenes
- 1996
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 54, s. 17486-17492
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Tidskriftsartikel (refereegranskat)abstract
- We present room-temperature Raman measurements of pressure-polymerized C60 and compare them with the spectra of RbC60 in the orthorhombic phase. Although both materials were prepared according to two completely different routes the spectra show a surprising similarity with respect to mode positions and line splitting. We concluded from this that both materials, the uncharged pressure-polymerized C60 and the rubidium-doped orthorhombic compound, have the same overall structure and the AC60 compounds can be considered as the doped species of the C60, polymerized using moderate low pressure and high temperatures. From a detailed comparison between both spectra mode shifting and line broadening as a consequence of the charge transfer was determined and electron-phonon coupling constants were estimated for the high-frequency Hg(7) and Hg(8) modes. The low values for the coupling constants compared to the ones in the K3C60 can explain the lack of superconductivity in the AC60 compounds.
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| 23. |
- Wågberg, Thomas, et al.
(författare)
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A Raman study of polymerised C60
- 1997
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Ingår i: Applied Physics A. - : Springer Science and Business Media LLC. - 0947-8396 .- 1432-0630. ; 64:3, s. 223-226
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Tidskriftsartikel (refereegranskat)abstract
- Results of Raman scattering studies on high pressure polymerized and photo polymerized C60 are reported. Although prepared according to different routes the Raman spectra of the two polymeric phases of C60 show a quantitative agreement with respect to mode positions and intensity. We conclude from this that both materials have the same structure at least in the short range order, i.e. the same type of bonding and co-ordination between neighbouring C60 molecules. An investigation of the time dependence of the thermal decomposition of high pressure polymerised C60 is also presented. The rate of decomposition of the polymeric phase is found to be multi-exponential at all temperatures investigated. From an Arrhenius-type analysis of the short time data and the long time data, respectively, the activation energy for thermal dissociation of polymeric bonds was found to increase with time.
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| 24. |
- Wågberg, Thomas, et al.
(författare)
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Polymeric phases of C60
- 1997
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Ingår i: Fullerenes: Recent Advances in the Chemistry and Physics of Fullerenes and Related Materials, vol. 5. - Pennington, NJ : The Electrochemical Society. - 1566771927 ; , s. 674-679
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Konferensbidrag (refereegranskat)abstract
- We have investigated the "low" pressure region where C60 can be transformed into polymeric chains or clusters. To learn more about the polymerization process we have treated pristine C60 at several different temperatures under hydrostatic pressures in silicone oil. We found that the reaction rate varied with temperature. Above 520 K at 1.0 GPa similar and high polymer fractions were obtained in all samples, but at 497 K the polymer fraction was only 10% after three hours, as indicated by the shift of the intensity of the pentagonal pinch mode in the Raman spectrum. Also, samples treated at the same pressure and temperature but with different thermal pre-history showed different degrees of polymerization. We have also found a correlation between the shift of the pentagonal pinch mode in the Raman spectrum to 1463 /cm and the intermolecular vibrational mode at 97 /cm. We therefore make the conclusion that the shift of the pentagonal pinch mode to 1463 /cm corresponds to the presence of dimers in the sample.
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| 25. |
- Flink, Axel, et al.
(författare)
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Microstructural characterization of the tool-chip interface enabled by focused ion beam and analytical electron microscopy
- 2009
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Ingår i: WEAR. - : Elsevier BV. - 0043-1648. ; 266:11-12, s. 1237-1240
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Tidskriftsartikel (refereegranskat)abstract
- A method based on focused ion beam milling and analytical electron microscopy to investigate the nature of the tool-chip interface is presented. It is employed to study tool-chip interfaces of the rake face of a (Ti0.83Si0.17)N coated PCBN insert after turning of case-hardened steel. Analytical electron microscopy shows the presence of a smeared adhered layer on the coating, which consists of steel elements from the work-piece, oxygen, and Si and N, most likely originating from the coating.
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