| 1. |
- Joffrin, E., et al.
(författare)
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Overview of the JET preparation for deuterium-tritium operation with the ITER like-wall
- 2019
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Ingår i: Nuclear Fusion. - : IOP Publishing. - 1741-4326 .- 0029-5515. ; 59:11
-
Forskningsöversikt (refereegranskat)abstract
- For the past several years, the JET scientific programme (Pamela et al 2007 Fusion Eng. Des. 82 590) has been engaged in a multi-campaign effort, including experiments in D, H and T, leading up to 2020 and the first experiments with 50%/50% D-T mixtures since 1997 and the first ever D-T plasmas with the ITER mix of plasma-facing component materials. For this purpose, a concerted physics and technology programme was launched with a view to prepare the D-T campaign (DTE2). This paper addresses the key elements developed by the JET programme directly contributing to the D-T preparation. This intense preparation includes the review of the physics basis for the D-T operational scenarios, including the fusion power predictions through first principle and integrated modelling, and the impact of isotopes in the operation and physics of D-T plasmas (thermal and particle transport, high confinement mode (H-mode) access, Be and W erosion, fuel recovery, etc). This effort also requires improving several aspects of plasma operation for DTE2, such as real time control schemes, heat load control, disruption avoidance and a mitigation system (including the installation of a new shattered pellet injector), novel ion cyclotron resonance heating schemes (such as the three-ions scheme), new diagnostics (neutron camera and spectrometer, active Alfven eigenmode antennas, neutral gauges, radiation hard imaging systems...) and the calibration of the JET neutron diagnostics at 14 MeV for accurate fusion power measurement. The active preparation of JET for the 2020 D-T campaign provides an incomparable source of information and a basis for the future D-T operation of ITER, and it is also foreseen that a large number of key physics issues will be addressed in support of burning plasmas.
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| 2. |
- Du, Hao, et al.
(författare)
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Corundum-structured AlCrNbTi oxide film grown using high-energy early-arriving ion irradiation in high-power impulse magnetron sputtering
- 2023
-
Ingår i: Scripta Materialia. - : Elsevier. - 1359-6462 .- 1872-8456. ; 234
-
Tidskriftsartikel (refereegranskat)abstract
- Multicomponent or high-entropy oxide films are of interest due to their remarkable structure and properties. Here, energetic ion irradiation is utilized for controlling the phase formation and structure of AlCrNbTi oxide at growth temperature of 500 degrees C. The ion acceleration is achieved by using a high-power impulse magnetron sputtering (HiPIMS) discharge, accompanied by a 10 & mu;s-long synchronized substrate bias (Usync), to minimize the surface charging effect and accelerate early-arriving ions, mainly Al+, O+, Ar2+, and Al2+. By increasing the magnitude of Usync from-100 V to-500 V, the film structure changes from amorphous to single-phase corundum, followed by the formation of high-number-density stacking faults (or nanotwins) at Usync =-500 V. This approach paves the way to tailor the high-temperature-phase and defect formation of oxide films at low growth temperature, with prospects for use in protective-coating and dielectric applications.
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| 3. |
- Niiranen, Pentti, et al.
(författare)
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Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electrons
- 2023
-
Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 94:2
-
Tidskriftsartikel (refereegranskat)abstract
- A recently presented chemical vapor deposition (CVD) method involves using plasma electrons as reducing agents for deposition of metals. The plasma electrons are attracted to the substrate surface by a positive substrate bias. Here, we present how a standard quartz crystal microbalance (QCM) system can be modified to allow applying a DC bias to the QCM sensor to attract plasma electrons to it and thereby also enable in situ growth monitoring during the electron-assisted CVD method. We show initial results from mass gain evolution over time during deposition of iron films using the biased QCM and how the biased QCM can be used for process development and provide insight into the surface chemistry by time-resolving the CVD method. Post-deposition analyses of the QCM crystals by cross-section electron microscopy and high-resolution x-ray photoelectron spectroscopy show that the QCM crystals are coated by an iron-containing film and thus function as substrates in the CVD process. A comparison of the areal mass density given by the QCM crystal and the areal mass density from elastic recoil detection analysis and Rutherford backscattering spectrometry was done to verify the function of the QCM setup. Time-resolved CVD experiments show that this biased QCM method holds great promise as one of the tools for understanding the surface chemistry of the newly developed CVD method.
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| 4. |
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| 5. |
- Shu, Rui, 1990-, et al.
(författare)
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Influence of Metal Substitution and Ion Energy on Microstructure Evolution of High-Entropy Nitride (TiZrTaMe)N1-x (Me = Hf, Nb, Mo, or Cr) Films
- 2021
-
Ingår i: ACS APPLIED ELECTRONIC MATERIALS. - : American Chemical Society (ACS). - 2637-6113. ; 3:6, s. 2748-2756
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Tidskriftsartikel (refereegranskat)abstract
- Multicomponent or high-entropy ceramics show unique combinations of mechanical, electrical, and chemical properties of importance in coating applications. However, generalizing controllable thin-film processes for these complex materials remains a challenge. Here, understoichiometric (TiZrTaMe)N1-x (Me = Hf, Nb, Mo, or Cr, 0.12 <= x <= 0.30) films were deposited on Si(100) substrates at 400 degrees C by reactive magnetron sputtering using single elemental targets. The influence of ion energy during film growth was investigated by varying the negative substrate bias voltage from similar to 10 V (floating potential) to 130 V. The nitrogen content for the samples determined by elastic recoil detection analysis varied from 34.9 to 43.8 at. % (0.12 <= x <= 0.30), and the metal components were near-equimolar and not affected by the bias voltage. On increasing the substrate bias, the phase structures of (TiZrTaMe)N1-x (Me = Hf, Nb, or Mo) films evolved from a polycrystalline fcc phase to a (002) preferred orientation along with a change in surface morphology from faceted triangular features to a dense and smooth structure with nodular mounds. All the four series of (TiZrTaMe)N1-x (Me = Hf, Nb, Mo, or Cr) films exhibited increasing intrinsic stress with increasing negative bias. The maximum compressive stress reached similar to 3.1 GPa in Hf- and Cr-containing films deposited at -130 V. The hardness reached a maximum value of 28.0 +/- 1.0 GPa at a negative bias >= 100 V for all the four series of films. The effect of bias on the mechanical properties of (TiNbZrMe)N1-x films can thus guide the design of protective high-entropy nitride films.
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| 6. |
- Shu, Rui, et al.
(författare)
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Multicomponent TixNbCrAl nitride films deposited by dc and high-power impulse magnetron sputtering
- 2021
-
Ingår i: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 426
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Tidskriftsartikel (refereegranskat)abstract
- Multicomponent TixNbCrAl nitride films were deposited on Si(100) substrates by reactive direct current magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) in the absence of substrate heating and bias. Three single Ti, Nb, and Cr50Al50 targets were either driven by three de or three HiPIMS power supplies. The Ti content in the films was varied by tuning the power applied to the Ti target. The composition was determined by ion beam analysis. The nitrogen content is nearly stoichiometric (48-50 at.%) in the HiPIMS series, while the dcMS are understoichiometric (39-45 at.%). The crystal structure, stress and density of the studied film were investigated by X-ray techniques and the microstructure was examined by scanning electron microscopy. All the Ti-containing films for both series exhibit an fcc NaCl-type phase structure. In particular, the dcMS series shows a (111) preferred orientation, resulting in a faceted surface morphology compared to a dense and smooth microstructure of the HiPIMS films. The compressive stress of the HiPIMS series (> 2.0 GPa) is significantly larger than the values of the dcMS series (<0.5 GPa). Nanoindentation measurements show a maximum hardness of 29.9 GPa and Young's modulus of 304 GPa were obtained in the HiPIMS series. The results may promote HiPIMS techniques for the synthesis of complex multicomponent films for the application aspect to protective and hard coatings.
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| 7. |
- Abedin, Ahmad, et al.
(författare)
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GeSnSi CVD Epitaxy using Silane, Germane, Digermane, and Tin tetrachloride
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Tidskriftsartikel (refereegranskat)abstract
- In this study, strain relaxed and compressive strained Ge1-x-ySnxSiy (0.015≤x≤0.15 and 0≤y≤0.15) layers were epitaxially grown on Si substrate in a chemical vapor deposition reactor at atmospheric pressure. Digermane (Ge2H6) and germane (GeH4) were used as Ge precursors and tin tetrachloride (SnCl4) was used as Sn precursor. The growth temperature was kept below 400ᵒC to suppress Sn out diffusion. The layers crystal quality and strain were characterized using XRD, high resolution reciprocal lattice mapping and transmission electron microscopy and the surface morphology was investigated by atomic force microscopy (AFM). Furthermore, the low temperature epitaxial growth up to 15% Si atoms incorporation in Ge0.94Sn0.06 was demonstrated by adding silane (SiH4) as Si precursor. Sn contents calculated from high resolution XRD patterns were confirmed by Rutherford backscattering spectroscopy which shows that Sn atoms are mostly positioned in substitutional sites. AFM analysis showed below 1nm surface roughness for both strained and strain relaxed GeSn layers which make the promising materials for photonics and electronics applications.
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| 8. |
- Achenbach, Jan-Ole, et al.
(författare)
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Correlative Experimental and Theoretical Investigation of the Angle-Resolved Composition Evolution of Thin Films Sputtered from a Compound Mo2BC Targe
- 2019
-
Ingår i: Coatings. - : MDPI AG. - 2079-6412. ; 9:3
-
Tidskriftsartikel (refereegranskat)abstract
- The angle-resolved composition evolution of Mo-B-C thin films deposited from a Mo2BC compound target was investigated experimentally and theoretically. Depositions were carried out by direct current magnetron sputtering (DCMS) in a pressure range from 0.09 to 0.98 Pa in Ar and Kr. The substrates were placed at specific angles α with respect to the target normal from 0 to ±67.5°. A model based on TRIDYN and SIMTRA was used to calculate the influence of the sputtering gas on the angular distribution function of the sputtered species at the target, their transport through the gas phase, and film composition. Experimental pressure- and sputtering gas-dependent thin film chemical composition data are in good agreement with simulated angle-resolved film composition data. In Ar, the pressure-induced film composition variations at a particular α are within the error of the EDX measurements. On the contrary, an order of magnitude increase in Kr pressure results in an increase of the Mo concentration measured at α = 0° from 36 at.% to 43 at.%. It is shown that the mass ratio between sputtering gas and sputtered species defines the scattering angle within the collision cascades in the target, as well as for the collisions in the gas phase, which in turn defines the angle- and pressure-dependent film compositions.
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| 9. |
- Achenbach, Jan-Ole, et al.
(författare)
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Low temperature oxidation behavior of Mo2BC coatings
- 2020
-
Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 38:2
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Tidskriftsartikel (refereegranskat)abstract
- Mo2BC exhibits a unique combination of high stiffness and moderate ductility, enabling the application as a protective and wear resistant coating. As the low temperature oxidation behavior of Mo2BC coatings is unexplored, direct current magnetron sputtered Mo2BC coatings were oxidized at temperatures ranging from 500 to 100 degrees C for up to 28 days. Time-of-flight elastic recoil detection analysis reveals that the onset of oxidation takes place at approximately 300 degrees C as a significant increase in the O content was observed. Crystalline oxide scales containing orthorhombic MoO3 were identified after oxidation for 15 min at 500 degrees C and 10 days at 200 degrees C. Isothermal oxidation at 200 and 100 degrees C exhibits oxide scale thicknesses of 401 +/- 33 and 22 +/- 10 nm after 14 days. Oxidation for 28 days at 100 degrees C exhibits an oxide scale thickness of 13 +/- 3 nm, which is comparable to the aforementioned oxide scale thickness after oxidation for 14 days at 100 degrees C. Based on the combination of mechanical properties and the here reported low temperature oxidation behavior, Mo2BC coatings qualify for applications in solid wood machining and low temperature forming processes at temperatures close to 100 degrees C or below.
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| 10. |
- Achenbach, Jan-Ole, et al.
(författare)
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Synthesis and Properties of Orthorhombic MoAlB Coatings
- 2019
-
Ingår i: Coatings. - : MDPI. - 2079-6412. ; 9:8
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Tidskriftsartikel (refereegranskat)abstract
- MoAlB is a potential candidate for high-temperature application since a dense, adherent alumina scale is formed. While, based on X-ray diffraction investigations, the formation of phase pure orthorhombic MoAlB coatings is observed, energy dispersive X-ray spectroscopy carried out in a scanning transmission electron microscope reveals the presence of Al-rich and O-rich regions within the MoAlB matrix. The oxidation kinetics of coatings and bulk is similar to the scale thickness formed on the MoAlB coating after oxidation at 1200 degrees C for 30 min is similar to the one extrapolated for bulk MoAlB. Furthermore, the oxidation kinetics of MoAlB coatings is significantly lower than the one reported for bulk Ti2AlC. Finally, the elastic properties measured for the as-deposited coatings are consistent ab initio predictions.
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| 11. |
- Adalsteinsson, Sigurbjörn Már, et al.
(författare)
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Correlating chemical composition and optical properties of photochromic rare-earth oxyhydrides using ion beam analysis
- 2020
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - : ELSEVIER. - 0168-583X .- 1872-9584. ; 485, s. 36-40
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Tidskriftsartikel (refereegranskat)abstract
- We relate the photochromic response of rare-earth oxyhydride thin films (YHO, NdHO, GdHO and DyHO) synthesized by reactive magnetron sputtering to chemical composition. Depth profiles of the sample composition are extracted by a multi-method ion beam analysis approach. The total areal density of the thin films is deduced from Rutherford Backscattering Spectrometry while coincidence Time-of-Flight/Energy Elastic Recoil Detection Analysis provides depth-profiles of the film constituents. High-resolution depth profiles of the concentration of light species, i.e. hydrogen and oxygen, are additionally extracted from Nuclear Reaction Analysis and Elastic Backscattering Spectrometry, respectively. The photochromic response of the films is measured by optical transmission spectroscopy before and after illumination. We report photochromic properties for YHO, NdHO, GdHO and DyHO for chemical compositions described by the formula REH2-delta O delta in the range of 0.45 < 6 < 1.5.
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| 12. |
- Aghda, Soheil Karimi, et al.
(författare)
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Ion kinetic energy- and ion flux-dependent mechanical properties and thermal stability of (Ti,Al)N thin films
- 2023
-
Ingår i: Acta Materialia. - : Elsevier. - 1359-6454 .- 1873-2453. ; 250
-
Tidskriftsartikel (refereegranskat)abstract
- Ion-irradiation-induced changes in structure, elastic properties, and thermal stability of metastable c-(Ti,Al)N thin films synthesized by high-power pulsed magnetron sputtering (HPPMS) and cathodic arc deposition (CAD) are systematically investigated by experiments and density functional theory (DFT) simulations. While films deposited by HPPMS show a random orientation at ion kinetic energies (Ek)>105 eV, an evolution towards (111) orientation is observed in CAD films for Ek>144 eV. The measured ion energy flux at the growing film surface is 3.3 times larger for CAD compared to HPPMS. Hence, it is inferred that formation of the strong (111) texture in CAD films is caused by the ion flux-and ion energy-induced strain energy minimization in defective c-(Ti,Al)N. The ion energy-dependent elastic modulus can be rationalized by considering the ion energy-and orientation -dependent formation of point defects from DFT predictions: The balancing effects of bombardment-induced Frenkel defects formation and the concurrent evolution of compressive intrinsic stress result in the apparent independence of the elastic modulus from Ek for HPPMS films without preferential orientation. However, an ion energy-dependent elastic modulus reduction of similar to 18% for the CAD films can be understood by considering the 34% higher Frenkel pair concentration formed at Ek=182 eV upon irradiation of the experimentally observed (111)-oriented (Ti,Al)N in comparison to the (200)-configuration at similar Ek. Moreover, the effect of Frenkel pair concentration on the thermal stability of metastable c-(Ti,Al)N is investigated by differential scanning calorimetry: Ion-irradiation-induced increase in Frenkel pairs concentration retards the wurtzite formation temperature by up to 206 degrees C.
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| 13. |
- Aghda, Soheil Karimi, et al.
(författare)
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Valence electron concentration- and N vacancy-induced elasticity in cubic early transition metal nitrides
- 2023
-
Ingår i: Acta Materialia. - : Elsevier. - 1359-6454 .- 1873-2453. ; 255
-
Tidskriftsartikel (refereegranskat)abstract
- Motivated by frequently reported deviations from stoichiometry in cubic transition metal nitride (TMNx) thin films, the effect of N-vacancy concentration on the elastic properties of cubic TiNx, ZrNx, VNx, NbNx, and MoNx (0.72 & LE; x & LE; 1.00) is systematically studied by density functional theory (DFT) calculations. The predictions are validated experimentally for VNx (0.77 & LE; x & LE; 0.97). The DFT results indicate that the elastic behavior of the TMNx depends on both the N-vacancy concentration and the valence electron concentration (VEC) of the transition metal: While TiNx and ZrNx exhibit vacancy-induced reductions in elastic modulus, VNx and NbNx show an increase. These trends can be rationalized by considering vacancy-induced changes in elastic anisotropy and bonding. While introduction of N-vacancies in TiNx results in a significant reduction of elastic modulus along all directions and a lower average bond strength of Ti-N, the vacancy-induced reduction in [001] direction of VNx is overcompensated by the higher stiffness along [011] and [111] directions, resulting in a higher average bond strength of V-N. To validate the predicted vacancy-induced changes in elasticity experimentally, close-to-singlecrystal VNx (0.77 & LE; x & LE; 0.97) are grown on MgO(001) substrates. As the N-content is reduced, the relaxed lattice parameter a0, as probed by X-ray diffraction, decreases from 4.128 & ANGS; to 4.096 & ANGS;. This reduction in lattice parameter is accompanied by an anomalous 11% increase in elastic modulus, as determined by nanoindentation. As the experimental data agree with the predictions, the elasticity enhancement in VNx upon N-vacancy formation can be understood based on the concomitant changes in elastic anisotropy and bonding.
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| 14. |
- Akansel, Serkan, et al.
(författare)
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Enhanced Gilbert damping in Re-doped FeCo films : Combined experimental and theoretical study
- 2019
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Ingår i: Physical Review B. - 2469-9950 .- 2469-9969. ; 99:17
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Tidskriftsartikel (refereegranskat)abstract
- The effects of rhenium doping in the range 0-10 at.% on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first-principles electronic structure calculations focusing on the change of the saturation magnetization (M-s) and the Gilbert damping parameter (alpha). Both experimental and theoretical results show that M-s decreases with increasing Re-doping level, while at the same time alpha increases. The experimental low temperature saturation magnetic induction exhibits a 29% decrease, from 2.31 to 1.64 T, in the investigated doping concentration range, which is more than predicted by the theoretical calculations. The room temperature value of the damping parameter obtained from ferromagnetic resonance measurements, correcting for extrinsic contributions to the damping, is for the undoped sample 2.1 x 10(-3), which is close to the theoretically calculated Gilbert damping parameter. With 10 at.% Re doping, the damping parameter increases to 7.8 x 10(-3), which is in good agreement with the theoretical value of 7.3 x 10(-3). The increase in damping parameter with Re doping is explained by the increase in the density of states at the Fermi level, mostly contributed by the spin-up channel of Re. Moreover, both experimental and theoretical values for the damping parameter weakly decrease with decreasing temperature.
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| 15. |
- Akansel, Serkan, et al.
(författare)
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Enhanched Gilbert Damping in Re doped FeCo Films : A combined experimental and theoretical study
-
Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- The effects of rhenium doping in the range 0 – 10 at% on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations focussing on the change of the saturation magnetization (Ms ) and the Gilbert damping parameter (α ). Both experimental and theoretical results show that Ms decreases with increasing Re doping level, while at the same time α increases. The experimental low temperature saturation magnetic induction exhibits a 29% decrease, from 2.31T to 1.64T, in the investigated doping concentration range, which is more than predicted by the theoretical calculations. The room temperature value of the damping parameter obtained from ferromagnetic resonance measurements, correcting for extrinsic contributions to the damping, is for the undoped sample 2.7X103, which is close to the Gilbert damping parameter extracted from the theoretical calculations. The room temperature experimental value for the damping parameter increases to 9X103 when doping with 10 at% Re; the corresponding increase of the Gilbert damping parameter obtained from theoretical calculations is 7.3X103. Both experimental and theoretical values for the damping parameter weakly decrease with decreasing temperature.
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| 16. |
- Alijan Farzad Lahiji, Faezeh, et al.
(författare)
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Growth and optical properties of NiO thin films deposited by pulsed dc reactive magnetron sputtering
- 2023
-
Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 41:6
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Tidskriftsartikel (refereegranskat)abstract
- NiO thin films with varied oxygen contents are grown on Si(100) and c-Al2O3 at a substrate temperature of 300 degrees C using pulsed dc reactive magnetron sputtering. We characterize the structure and optical properties of NiO changes as functions of the oxygen content. NiO with the cubic structure, single phase, and predominant orientation along (111) is found on both substrates. X-ray diffraction and pole figure analysis further show that NiO on the Si(100) substrate exhibits fiber-textured growth, while twin domain epitaxy was achieved on c-Al2O3, with NiO(111) k Al2O3(0001) and NiO[1 (1) over bar0]k Al2O3[10 (1) over bar0] or NiO[(1) over bar 10]k Al2O3[2 (1) over bar(1) over bar0] epitaxial relationship. The oxygen content in NiO films did not have a significant effect on the refractive index, extinction coefficient, and absorption coefficient. This suggests that the optical properties of NiO films remained unaffected by changes in the oxygen content.
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| 17. |
- Aliramaji, Shamsa, et al.
(författare)
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Effect of Growth Temperature and Atmosphere Exposure Time on Impurity Incorporation in Sputtered Mg, Al, and Ca Thin Films
- 2023
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Ingår i: Materials. - : MDPI. - 1996-1944. ; 16:1
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Tidskriftsartikel (refereegranskat)abstract
- Impurities can be incorporated during thin film deposition, but also can originate from atmosphere exposure. As impurities can strongly affect the composition-structure-property relations in magnetron sputter deposited thin films, it is important to distinguish between both incorporation channels. Therefore, the impurity incorporation by atmosphere exposure into sputtered Mg, Al, and Ca thin films is systematically studied by a variation of the deposition temperatures and atmosphere exposure times. Deposition temperature variation results in morphological modifications explained by considering surface and bulk diffusion as well as grain boundary motion and evaporation. The film morphologies exhibiting the lowest oxygen concentrations, as measured by energy dispersive X-ray spectroscopy, are obtained at a homologous temperature of 0.4 for both Mg and Al thin films. For Ca, preventing atmosphere exposure is essential to hinder impurity incorporation: By comparing the impurity concentration in Al-capped and uncapped thin films, it is demonstrated that Ca thin films are locally protected by Al-capping, while Mg (and Al) form native passivation layers. Furthermore, it can be learned that the capping (or self-passivation) efficiency in terms of hindering further oxidation of the films in atmosphere is strongly dependent on the underlying morphology, which in turn is defined by the growth temperature.
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| 18. |
- Arvizu, Miguel A, et al.
(författare)
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Electrochromic WO3 thin films attain unprecedented durability by potentiostatic pretreatment
- 2019
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Ingår i: Journal of Materials Chemistry A. - : ROYAL SOC CHEMISTRY. - 2050-7488 .- 2050-7496. ; 7:6, s. 2908-2918
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Tidskriftsartikel (refereegranskat)abstract
- Electrochromic windows and glass facades are able to impart energy efficiency jointly with indoor comfort and convenience. Long-term durability is essential for practical implementation of this technology and has recently attracted broad interest. Here we show that a simple potentiostatic pretreatment of sputterdeposited thin films of amorphous WO3-the most widely studied electrochromic material-can yield unprecedented durability for charge exchange and optical modulation under harsh electrochemical cycling in a Li-ion-conducting electrolyte and effectively evades harmful trapping of Li. The pretreatment consisted of applying a voltage of 6.0 V vs. Li/Li+ for several hours to a film backed by a transparent conducting In2O3: Sn layer. Associated compositional and structural modifications were probed by several techniques, and improved durability was associated with elemental intermixing at the WO3/ITO and ITO/glass boundaries as well as with carbonaceous solid-electrolyte interfacial layers on the WO3 films. Our work provides important new insights into long-term durability of ion-exchange-based devices.
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| 19. |
- Arvizu, Miguel, et al.
(författare)
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Galvanostatic ion de-trapping rejuvenates oxide thin films
- 2015
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Ingår i: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 7:48, s. 26387-26390
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Tidskriftsartikel (refereegranskat)abstract
- Ion trapping under charge insertion-extraction is well-known to degrade the electrochemical performance of oxides. Galvano-static treatment was recently shown capable to rejuvenate the oxide, but the detailed mechanism remained uncertain. Here we report on amorphous electrochromic (EC) WO3 thin films prepared by sputtering and electrochemically cycled in a lithium-containing electrolyte under conditions leading to severe loss of charge exchange capacity and optical modulation span. Time-of-flight elastic recoil detection analysis (ToF-ERDA) documented pronounced Li+ trapping associated with the degradation of the EC properties and, importantly, that Li+ detrapping, caused by a weak constant current drawn through the film for some time, could recover the original EC performance. Thus, ToF-ERDA provided direct and unambiguous evidence for Li+ detrapping.
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| 20. |
- Atak, Gamze, et al.
(författare)
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Electrochromism of nitrogen-doped tungsten oxide thin films
- 2020
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Ingår i: Materials Today. - : Elsevier BV. - 2214-7853. ; 33:6, s. 2434-2439
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Tidskriftsartikel (refereegranskat)abstract
- Tungsten-oxide-based thin films were prepared by reactive DC magnetron sputtering in the presence ofoxygen and nitrogen. Nitrogen contents up to 12 at.% were documented by Rutherford backscattering spectrometry and time-of-flight elastic recoil detection analysis. Optical and electrochemical measurements showed that films with up to 4 at.% of nitrogen were as transparent as undoped tungsten oxide films and displayed enhanced electrochromic properties manifested in an increase in the coloration efficiency by as much as 20%.
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| 21. |
- Atak, Gamze, et al.
(författare)
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Nitrogen doped W oxide films for electrochromic applications
- 2019
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Ingår i: EMRS Spring Meeting 2019.
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Konferensbidrag (refereegranskat)abstract
- Electrochromic (EC) materials are able to change their optical properties such as transmission, absorption and reflection reversibly by application of an external voltage. EC metal oxides are divided into two groups: cathodic (coloring under ion insertion) and anodic (coloring under ion extraction). W oxide is a well-known cathodic EC material and its color changes from transparent to dark blue when ions are inserted.A desirable electrochromic material must have and maintain a high optical modulation, high coloration efficiency, fast coloration/bleaching switching kinetics and a stable charge/ discharge reversibility. In this study, W oxide films with different nitrogen levels were deposited by using reactive DC sputtering onto glass and ITO coated glass in Ar+O2+N2 atmosphere. For all films, the total gas pressure was set to 4.0 Pa, the Ar flow rate was kept at 50 ml/min, and the O2+N2 flow rate was kept at 7.5 ml/min. The optical, structural and electrochromic properties of undoped and N-doped W oxide films were investigated. The optical studies revealed that the average optical transmittance and band gap decreased (from 3.43 to 3.08 eV) due to N doping. It is shown that a small amount of nitrogen has promising effects on the EC performance (i.e. charge/discharge reversibility, optical modulation, coloration efficiency) of the WO3 films. It is observed that CE values increased by increasing N2 flow rate and its maximum value was 33.8 cm2/C. The maximum ΔT at 537 nm was 73.6% for an optimized N doped W oxide film.
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| 22. |
- Azina, Clio, et al.
(författare)
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Oxidation behaviour of V2AlC MAX phase coatings
- 2020
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Ingår i: Journal of the European Ceramic Society. - : ELSEVIER SCI LTD. - 0955-2219 .- 1873-619X. ; 40:13, s. 4436-4444
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Tidskriftsartikel (refereegranskat)abstract
- We report on the oxidation behaviour of V2AlC coatings up to 800 degrees C, in air. The coatings were deposited at 580 degrees C using magnetron sputtering from a powder metallurgical composite V2AlC target and were subsequently oxidised for 5, 15 and 30 min. The microstructural evolution of the samples was investigated, and X-ray diffraction patterns were collected to track the formation of oxides. The first indications of oxidation appear after just 15 min at 500 degrees C, as V-based oxides grew on the surface of the coatings. Later, the presence of mostly V-based oxides and ternary (V, Al)-oxides was observed starting after 5 min at 600 degrees C. Further analyses confirmed outward diffusion of V and inward diffusion of O, while Al tends to sublimate. alpha-A12O3 was only indexed after 5 min at 800 degrees C. Ex-situ electrical resistivity measurements allowed tracking the oxidation progress of the V2AlC coating.
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| 23. |
- Azina, Clio, et al.
(författare)
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Yttrium incorporation in Cr2AlC : On the metastable phase formation and decomposition of (Cr,Y)(2)AlC MAX phase thin films
- 2023
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Ingår i: Journal of The American Ceramic Society. - : John Wiley & Sons. - 0002-7820 .- 1551-2916. ; 106:4, s. 2652-2665
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Tidskriftsartikel (refereegranskat)abstract
- Herein we report on the synthesis of a metastable (Cr,Y)(2)AlC MAX phase solid solution by co-sputtering from a composite Cr-Al-C and elemental Y target, at room temperature, followed by annealing. However, direct high-temperature synthesis resulted in multiphase films, as evidenced by X-ray diffraction analyses, room-temperature depositions, followed by annealing to 760 degrees C led to the formation of phase pure (Cr,Y)(2)AlC by diffusion. Higher annealing temperatures caused a decomposition of the metastable phase into Cr2AlC, Y5Al3, and Cr-carbides. In contrast to pure Cr2AlC, the Y-containing phase crystallizes directly in the MAX phase structure instead of first forming a disordered solid solution. Furthermore, the crystallization temperature was shown to be Y-content dependent and was increased by similar to 200 degrees C for 5 at.% Y compared to Cr2AlC. Calculations predicting the metastable phase formation of (Cr,Y)(2)AlC and its decomposition are in excellent agreement with the experimental findings.
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| 24. |
- Baba, Elbruz Murat, et al.
(författare)
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Preferential Orientation of Photochromic Gadolinium Oxyhydride Films
- 2020
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Ingår i: Molecules. - : MDPI. - 1431-5157 .- 1420-3049. ; 25:14
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Tidskriftsartikel (refereegranskat)abstract
- We report preferential orientation control in photochromic gadolinium oxyhydride (GdHO) thin films deposited by a two-step process. Gadolinium hydride (GdH2-x) films were grown by reactive magnetron sputtering, followed by oxidation in air. The preferential orientation, grain size, anion concentrations and photochromic response of the films were strongly dependent on the deposition pressure. The GdHO films showed a preferential orientation along the [100] direction and exhibited photochromism when synthesized at deposition pressures of up to 5.8 Pa. The photochromic contrast was larger than 20% when the films were deposited below 2.8 Pa with a 0.22 H-2/Ar flow ratio. We argue that the relation of preferential orientation and the post deposition oxidation since oxygen concentration is known to be a key parameter for photochromism in rare-earth oxyhydride thin films. The experimental observations described above were explained by the decrease of the grain size as a result of the increase of the deposition pressure of the sputtering gas, followed by a higher oxygen incorporation.
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| 25. |
- Baben, Moritz to, et al.
(författare)
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Unprecedented thermal stability of inherently metastable titanium aluminum nitride by point defect engineering
- 2017
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Ingår i: Materials Research Letters. - : TAYLOR & FRANCIS INC. - 2166-3831. ; 5:3, s. 158-169
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Tidskriftsartikel (refereegranskat)abstract
- Extreme cooling rates during physical vapor deposition (PVD) allow growth of metastable phases. However, we propose that reactive PVD processes can be described by a gas-solid paraequilibrium defining chemical composition and thus point defect concentration. Weshow that this notion allows for point defect engineering by controlling deposition conditions. As example we demonstrate that thermal stability of metastable (Ti, Al) Nx, the industrial benchmark coating for wear protection, can be increased from 800 degrees C to unprecedented 1200 degrees C by minimizing the vacancy concentration. The thermodynamic approach formulated here opens a pathway for thermal stability engineering by point defects in reactively deposited thin films.
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