| 1. |
- Aad, G., et al.
(författare)
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- 2010
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swepub:Mat__t
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| 2. |
- Aad, G., et al.
(författare)
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- 2010
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swepub:Mat__t
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| 3. |
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| 4. |
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| 5. |
- Aad, G., et al.
(författare)
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- 2011
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swepub:Mat__t
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| 6. |
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| 7. |
- Aad, G., et al.
(författare)
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- 2010
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swepub:Mat__t
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| 8. |
- Aad, G., et al.
(författare)
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- 2010
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swepub:Mat__t
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| 9. |
- Abdesselam, A., et al.
(författare)
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Engineering for the ATLAS SemiConductor Tracker (SCT) end-cap
- 2008
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Ingår i: Journal of Instrumentation. - 1748-0221. ; 3
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Tidskriftsartikel (refereegranskat)abstract
- The ATLAS SemiConductor Tracker (SCT) is a silicon-strip tracking detector which forms part of the ATLAS inner detector. The SCT is designed to track charged particles produced in proton-proton collisions at the Large Hadron Collider (LHC) at CERN at an energy of 14 TeV. The tracker is made up of a central barrel and two identical end-caps. The barrel contains 2112 silicon modules, while each end-cap contains 988 modules. The overall tracking performance depends not only on the intrinsic measurement precision of the modules but also on the characteristics of the whole assembly, in particular, the stability and the total material budget. This paper describes the engineering design and construction of the SCT end-caps, which are required to support mechanically the silicon modules, supply services to them and provide a suitable environment within the inner detector. Critical engineering choices are highlighted and innovative solutions are presented - these will be of interest to other builders of large-scale tracking detectors. The SCT end-caps will be fully connected at the start of 2008. Further commissioning will continue, to be ready for proton-proton collision data in 2008.
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| 10. |
- Labit, B., et al.
(författare)
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Dependence on plasma shape and plasma fueling for small edge-localized mode regimes in TCV and ASDEX Upgrade
- 2019
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Ingår i: Nuclear Fusion. - : IOP Publishing. - 1741-4326 .- 0029-5515. ; 59:8
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Tidskriftsartikel (refereegranskat)abstract
- © 2019 Institute of Physics Publishing. All rights reserved. Within the EUROfusion MST1 work package, a series of experiments has been conducted on AUG and TCV devices to disentangle the role of plasma fueling and plasma shape for the onset of small ELM regimes. On both devices, small ELM regimes with high confinement are achieved if and only if two conditions are fulfilled at the same time. Firstly, the plasma density at the separatrix must be large enough (ne,sep/nG ∼ 0.3), leading to a pressure profile flattening at the separatrix, which stabilizes type-I ELMs. Secondly, the magnetic configuration has to be close to a double null (DN), leading to a reduction of the magnetic shear in the extreme vicinity of the separatrix. As a consequence, its stabilizing effect on ballooning modes is weakened.
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| 11. |
- Abdesselam, A., et al.
(författare)
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The ATLAS semiconductor tracker end-cap module
- 2007
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : Elsevier BV. - 0168-9002 .- 1872-9576. ; 575:3, s. 353-389
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Tidskriftsartikel (refereegranskat)abstract
- The challenges for the tracking detector systems at the LHC are unprecedented in terms of the number of channels, the required read-out speed and the expected radiation levels. The ATLAS Semiconductor Tracker. (SCT) end-caps have a total of about 3 million electronics channels each reading out every 25 ns into its own on-chip 3.3 mu s buffer. The highest anticipated dose after 10 years operation is 1.4x10(14) cm(-2) in units of 1 MeV neutron equivalent (assuming the damage factors scale with the non-ionising energy loss). The forward tracker has 1976 double-sided modules, mostly of area similar to 70 cm(2), each having 2 x 768 strips read out by six ASICs per side. The requirement to achieve an average perpendicular radiation length of 1.5% X-0, while coping with up to 7 W dissipation per module (after irradiation), leads to stringent constraints on the thermal design. The additional requirement of 1500e(-) equivalent noise charge (ENC) rising to only 1800e(-) ENC after irradiation, provides stringent design constraints on both the high-density Cu/Polyimide flex read-out circuit and the ABCD3TA read-out ASICs. Finally, the accuracy of module assembly must not compromise the 16 mu m (r phi) resolution perpendicular to the strip directions or 580 mu m radial resolution coming from the 40 mrad front-back stereo angle. A total of 2210 modules were built to the tight tolerances and specifications required for the SCT. This was 234 more than the 1976 required and represents a yield of 93%. The component flow was at times tight, but the module production rate of 40-50 per week was maintained despite this. The distributed production was not found to be a major logistical problem and it allowed additional flexibility to take advantage of where the effort was available, including any spare capacity, for building the end-cap modules. The collaboration that produced the ATLAS SCT end-cap modules kept in close contact at all times so that the effects of shortages or stoppages at different sites could be rapidly resolved.
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| 12. |
- Hammar, M., et al.
(författare)
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Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy
- 1998
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 72:7, s. 815-817
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Tidskriftsartikel (refereegranskat)abstract
- We have used scanning capacitance microscopy (SCM) to study the dopant distribution in regrown InP with high sensitivity and spatial resolution. Sulfur or iron doped InP was selectively regrown around n-doped InP mesas using hydride vapor phase epitaxy, and the resulting structure was imaged in cross section by SCM. For calibration purposes, reference layers with known doping levels were grown directly on top of the region of interest. Dramatic variations in the carrier concentration around the mesa, as well as pronounced differences in the behavior of S and Fe are observed. We correlate these findings to the growth and doping incorporation mechanisms. © 1998 American Institute of Physics.
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| 13. |
- Lourdudoss, Sebastian, et al.
(författare)
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Temporally resolved selective regrowth of InP around [110] and [110] mesas
- 1996
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Ingår i: Journal of Electronic Materials. - 0361-5235 .- 1543-186X. ; 25:3, s. 389-394
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Tidskriftsartikel (refereegranskat)abstract
- Temporally resolved selective regrowth of InP around reactive ion etched [110] and [110] directional mesas is studied by hydride vapor phase epitaxy at the growth temperatures of 600, 650, 685, and 700°C. The regrowth profiles are strikingly different depending upon the mesa orientation. The results are interpreted by invoking the difference in the bonding configurations of these mesas as well as the growth facility in a direction leading to the largest reduction of dangling bonds under the growth conditions. Various emerging planes during regrowth are identified and are {hhl} planes with initial values of l/h ≤ 3 but ≥ 3 as the planarization is approached. Initial lateral growth defined as the growth away from the mesa at half of its height in the very first minute is a decreasing function of temperature when plotted as Arrhenius curves. Such a behavior is attributed to the exothermicity of the reaction and to an enhanced pyrolysis of PH3 to P2. The lateral growth rate is much larger than that on the planar substrate. This should be taken into account when regrowth of a doped layer (e.g. InP:Fe or InP:Zn) is carried out to fabricate a buried heterostructure device since the dopant concentration can be very much lower than the one optimized on the planar substrates.
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