| 1. |
- Budich, Jan Carl, et al.
(författare)
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Fluctuation-driven topological Hund insulators
- 2013
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Ingår i: Physical Review B. - 2469-9950 .- 2469-9969. ; 87:23
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the role of electron-electron interaction in a two-band Hubbard model based on the Bernevig-Hughes-Zhang Hamiltonian exhibiting the quantum spin Hall (QSH) effect. By means of dynamical mean-field theory, we find that a system with topologically trivial noninteracting parameters can be driven into a QSH phase at finite interaction strength by virtue of local dynamical fluctuations. For very strong interaction, the system reenters a trivial insulating phase by going through a Mott transition. We obtain the phase diagram of our model by direct calculation of the bulk topological invariant of the interacting system in terms of its single-particle Green's function.
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| 2. |
- Caspi, Paul, et al.
(författare)
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Guidelines for a curriculum on embedded software and systems
- 2005
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Ingår i: ACM Transactions on Embedded Computing Systems. - : ACM Press. - 1539-9087 .- 1558-3465. ; 4:3, s. 587-611
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Tidskriftsartikel (refereegranskat)abstract
- The design of embedded real-time systems requires skills from multiple specific disciplines, including, but not limited to, control, computer science, and electronics. This often involves experts from differing backgrounds, who do not recognize that they address similar, if not identical, issues from complementary angles. Design methodologies are lacking in rigor and discipline so that demonstrating correctness of an embedded design, if at all possible, is a very expensive proposition that may delay significantly the introduction of a critical product. While the economic importance of embedded systems is widely acknowledged, academia has not paid enough attention to the education of a community of high-quality embedded system designers, an obvious difficulty being the need of interdisciplinarity in a period where specialization has been the target of most education systems. This paper presents the reflections that took place in the European Network of Excellence Artist leading us to propose principles and structured contents for building curricula on embedded software and systems.
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| 3. |
- Horio, M., et al.
(författare)
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Orbital-selective metal skin induced by alkali-metal-dosing Mott-insulating Ca 2 RuO 4
- 2023
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Ingår i: Communications Physics. - 2399-3650. ; 6:1
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Tidskriftsartikel (refereegranskat)abstract
- Doped Mott insulators are the starting point for interesting physics such as high temperature superconductivity and quantum spin liquids. For multi-band Mott insulators, orbital selective ground states have been envisioned. However, orbital selective metals and Mott insulators have been difficult to realize experimentally. Here we demonstrate by photoemission spectroscopy how Ca2RuO4, upon alkali-metal surface doping, develops a single-band metal skin. Our dynamical mean field theory calculations reveal that homogeneous electron doping of Ca2RuO4 results in a multi-band metal. All together, our results provide evidence for an orbital-selective Mott insulator breakdown, which is unachievable via simple electron doping. Supported by a cluster model and cluster perturbation theory calculations, we demonstrate a type of skin metal-insulator transition induced by surface dopants that orbital-selectively hybridize with the bulk Mott state and in turn produce coherent in-gap states.
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| 4. |
- van Loon, Erik G.C.P., et al.
(författare)
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Coulomb engineering of two-dimensional Mott materials
- 2023
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Ingår i: npj 2D Materials and Applications. - 2397-7132. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
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