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Sökning: WFRF:(Souliere Veronique)

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1.
  • Marinova, Maya, et al. (författare)
  • Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
  • 2011
  • Ingår i: Silicon Carbide and Related Materials 2010. ; , s. 241-244
  • Konferensbidrag (refereegranskat)abstract
    • The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.
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2.
  • Thierry-Jebali, Nicolas, et al. (författare)
  • Electrical Characterization of PiN Diodes with p(+) layer Selectively Grown by VLS Transport
  • 2013
  • Ingår i: Silicon Carbide and Related Materials 2012. - : Trans Tech Publications Inc.. ; , s. 911-914
  • Konferensbidrag (refereegranskat)abstract
    • This paper deals with electrical characterization of PiN diodes fabricated on an 8 degrees off-axis 4H-SiC with a p(++) epitaxial area grown by Vapour-Liquid-Solid (VLS) transport. It provides for the first time evidence that a high quality p-n junction can be achieved by using this technique followed by a High Temperature Annealing (HTA) process.
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