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- Aggerstam, Thomas, et al.
(författare)
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Selectively oxidized vertical-cavity surface-emitting lasers for high-speed data communication
- 2001
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Ingår i: Proc. SPIE 4286, SPIE's Optoelectronics 2001, Photonics West, San Jose, US. - Bellingham, WA, ETATS-UNIS : Society of Photo-Optical Instrumentation Engineers. ; , s. 96-
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Konferensbidrag (refereegranskat)abstract
- MITEL Semiconductor is developing the next generation low cost, high performance transceivers for data communication. The increasing quantity of data being transferred over the Internet demands very high capacity interconnects. A low cost, high-performance alternative is the use of parallel fiber interconnects where the light is, for example, coupled into a 12-channel fiber-ribbon. Parallel interconnects require good uniformity in order to reduce escalating costs and complexity. In this paper we report on the static and the modulation properties of 850nm multimode oxide VCSELs for use in such Gb/s transceiver system. Static power-current-voltage characteristics with good uniformity were obtained for different structures, with threshold currents down to sub-mA. A maximum small signal 3-dB bandwidth of 10 GHz and a modulation current efficiency up to 8.4 GHz/√[mA] were measured. Single channel results are presented for VCSELs operated at data rates from 2.5-10Gb/s.
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| 2. |
- Angulo Barrios, C., et al.
(författare)
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GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth
- 2001
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Ingår i: Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on.
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Konferensbidrag (refereegranskat)abstract
- GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.
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| 4. |
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| 5. |
- Stevens, Renaud, 1972-, et al.
(författare)
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High-speed visible VCSEL for POF data links
- 2000
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Ingår i: Proc. SPIE 3946, SPIE’s Optoelectronics 2000, Photonics West, San Jose, US, January 2000.. - : SPIE. ; , s. 88-94
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Konferensbidrag (refereegranskat)abstract
- We report on two AlGaInP-based visible VCSEL designs based on different current confinement schemes, ion implantation and selective oxidation, and we compare the respective performances with a particular interest on the modulation properties. The implanted device operated continuous wave (CW) up to 40 degrees Celsius. Threshold current of 7 mA, threshold voltage of 2.5 V and maximum optical power of 0.3 mW were measured at room temperature. The small signal modulation responses were fitted using a 3-poles model, allowing the estimation of various parameters such as resonance frequency, damping factor and parasitic cut-off. The maximum 3dB- bandwidth was shown to be 2.1 GHz, limited both by thermal and parasitic effects. 'Error-free' transmission at 1 Gb/s was demonstrated through 50-meter of graded-index POF. The selectivity oxidized devices achieve much higher output power (1.8 mW for the 10 micrometer opening diameter) with threshold current as low a 1.5 mA and threshold voltage of 2.1 V at room temperature, and operate CW up to 49 degrees Celsius. The maximum 3 dB-bandwidth was 4.5 GHz. Modulation current efficiency factor up to 2.8 GHz/(root)[mA] was measured.
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| 6. |
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| 7. |
- Stevens, Renaud, 1972-
(författare)
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Modulation Properties of Vertical Cavity Light Emitters
- 2001
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- It is estimated that, between the year 2000 and 2003, thenumber of online Internet users will grow from 250 millions to500 millions. This growth results in rapidly increasing demandfor fibre-optic communication bandwidth, occurring at alllevels: from access and local area networks (LANs) tometro-area networks (MANs). A now established solution for manyapplications such as interconnects and Gigabit Ethernet is thevertical cavity surface emitting laser (VCSEL). The advantagesof VCSELs are numerous: low fabrication and coupling costs,large modulation bandwidth, array integration and tunability.VCSEL-based modules, with speed up to 2.5 Gbit/s are nowcommercially available for multimode fibre (MMF) basedapplications. However, devices operating at long wavelength andhigher transmission rates (10Gbit/s and more) will be needed inthe near future.The purpose of the work presented in this thesis was toobtain an understanding of the high-speed properties of VCSELs,in order to extend the modulation frequency at which they canbe used in fibre optical communication systems. An approach forsystematic high-speed characterisation of VCSELs is presentedand both its potential benefits and problems are discussed. Itis shown that the VCSEL dynamics, under certain conditions, canbe well described by a small number of parameters that can beextracted from small signal measurements and used forfurtheroptimisation. The calibrated small-signal modulation responsesof VCSELs have been measured and fitted to an analyticaltransfer function allowing the estimation of the resonancefrequency, damping factor and parasitic cut-off at differentbias points. This data can be used to determine the relativeimportance of different bandwidth limiting effects due todamping, thermal heating and parasitics.Small signal analysis and transmission experiments wereperformed with a large sample of VCSELs covering the variousranges of applications. Visible VCSELs and resonant cavitylight emitting diodes (RCLEDs) for very short reach plasticoptical fibre (POF) applications, 850nm datacom VCSELs forshort distance multimode fibre networks, and long wavelengthVCSELs for long haul single mode fibre transmission.Keywords:Semiconductor lasers, VCSEL, high-speedmodulation, fibre optic networks, datacom, RCLED, plasticoptical fibre
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