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- Liu, Yen-Po, et al.
(författare)
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Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
- 2022
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332.
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Tidskriftsartikel (refereegranskat)abstract
- Due to its high hole-mobility, GaSb is a highly promising candidate for high-speed p-channels in electronic devices. However, GaSb exhibits a comparably thick native oxide causing detrimental interface defects, which has been proven difficult to remove. Here we present full oxide removal from GaSb surfaces using effective hydrogen plasma cleaning, studied in-situ by synchrotron-based X-ray photoelectron spectroscopy under ultrahigh vacuum (UHV). GaSb nanowires turn out to be cleaned faster and more efficiently than planar substrates. Since the UHV conditions are not scalable for industrial sample processing, H-plasma cleaning is furthermore used as pre-treatment prior to atomic layer deposition (ALD) of a protective high-k layer to demonstrate the use of the cleaning step in a more realistic fabrication situation. We observe a cleaning effect of the H-plasma even in the ALD environment, but we also find residual Ga- and Sb-oxides at the GaSb-high-k interface, which we attribute to re-oxidation of the cleaned surface. Our results indicate that an improved control of the ALD reactor vacuum environment could realize oxide- and defect-free interfaces in GaSb-based electronics.
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- Svegmark, K, et al.
(författare)
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Comparison of potato amylopectin starches and potato starches - influence of year and variety
- 2002
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Ingår i: Carbohydrate Polymers. - 0144-8617. ; 47:4, s. 331-340
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Tidskriftsartikel (refereegranskat)abstract
- Starches from three potato varieties and their respective transformants producing amylopectin starch were studied over a period of 3 years. The gelatinisation, swelling and dispersion properties were studied using differential scanning calorimetry (DSC), X-ray diffraction, swelling capacity measurements and a Brabender Viscograph. The potato amylopectin starches (PAP) exhibited higher endothermic temperatures as well as higher enthalpies than the normal potato starches (NPS). PAP samples gave rise to an exceptionally sharp viscosity peak during gelatinisation and a relatively low increase in viscosity on cooling. Swelling capacity measurements showed that PAP granules swelled more rapidly, and that the dispersion of the swollen granules occurred at a lower temperature (85 degreesC). Analysis of variance (ANOVA) also revealed that the year influenced the DSC results, and that both year and variety affect some of the Brabender parameters. Furthermore, the PAP and NPS samples were subjected to heat-moisture treatment at three different moisture levels, and the Brabender viscosity properties were studied. (C) 2002 Elsevier Science Ltd. All rights reserved.
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- Winkler, TW, et al.
(författare)
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Differential and shared genetic effects on kidney function between diabetic and non-diabetic individuals
- 2022
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Ingår i: Communications biology. - : Springer Science and Business Media LLC. - 2399-3642. ; 5:1, s. 580-
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Tidskriftsartikel (refereegranskat)abstract
- Reduced glomerular filtration rate (GFR) can progress to kidney failure. Risk factors include genetics and diabetes mellitus (DM), but little is known about their interaction. We conducted genome-wide association meta-analyses for estimated GFR based on serum creatinine (eGFR), separately for individuals with or without DM (nDM = 178,691, nnoDM = 1,296,113). Our genome-wide searches identified (i) seven eGFR loci with significant DM/noDM-difference, (ii) four additional novel loci with suggestive difference and (iii) 28 further novel loci (including CUBN) by allowing for potential difference. GWAS on eGFR among DM individuals identified 2 known and 27 potentially responsible loci for diabetic kidney disease. Gene prioritization highlighted 18 genes that may inform reno-protective drug development. We highlight the existence of DM-only and noDM-only effects, which can inform about the target group, if respective genes are advanced as drug targets. Largely shared effects suggest that most drug interventions to alter eGFR should be effective in DM and noDM.
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- Zhu, Zhongyunshen, et al.
(författare)
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Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
- 2022
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Ingår i: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 4:1, s. 531-538
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Tidskriftsartikel (refereegranskat)abstract
- Sb-based semiconductors are critical p-channel materials for III-V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by the low quality of the channel to gate dielectric interface, which leads to poor gate modulation. In this study, we achieve improved electrostatics of vertical GaSb nanowire p-channel MOSFETs by employing robust digital etch (DE) schemes, prior to high-κ deposition. Two different processes, based on buffer-oxide etcher (BOE) 30:1 and HCl:IPA 1:10, are compared. We demonstrate that water-based BOE 30:1, which is a common etchant in Si-based CMOS process, gives an equally controllable etching for GaSb nanowires compared to alcohol-based HCl:IPA, thereby realizing III-V on Si with the same etchant selection. Both DE chemicals show good interface quality of GaSb with a substantial reduction in Sb oxides for both etchants while the HCl:IPA resulted in a stronger reduction in the Ga oxides, as determined by X-ray photoelectron spectroscopy and in agreement with the electrical characterization. By implementing these DE schemes into vertical GaSb nanowire MOSFETs, a subthreshold swing of 107 mV/dec is obtained in the HCl:IPA pretreated sample, which is state of the art compared to reported Sb-based MOSFETs, suggesting a potential of Sb-based p-type devices for all-III-V CMOS technologies.
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