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- Lindahl, Martin, Doktorand, 1985-, et al.
(författare)
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Field test of a silicon carbide metro propulsion system with reduced losses and acoustic noise
- 2021
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Ingår i: IET Electrical Systems in Transportation. - : John Wiley and Sons Inc. - 2042-9738 .- 2042-9746. ; 11:1, s. 47-57
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Tidskriftsartikel (refereegranskat)abstract
- Results are reported from a successful field test with a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) traction inverter. The train has been operated over a 3-month period in the Stockholm metro system. Increased traction inverter power density has been achieved, with volume and weight reductions of 51% and 25%, respectively. Lower power losses permit the use of car motion cooling. A sound pressure level reduction of 9 dB(A) was measured in the field with the higher inverter switching frequency permitted by using SiC. Complementing tests have been performed in the laboratory to compare thermal performance of silicon and SiC in the same power semiconductor housing. Propulsion system power losses are reduced by 19% with SiC. Acoustic noise reductions while increasing switching frequency are also reported. © 2020 The Authors. IET Electrical Systems in Transportation published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.
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- Velander, E., et al.
(författare)
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Analysis of short circuit type II and III of high voltage SiC MOSFETs with fast current source gate drive principle
- 2016
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Ingår i: 2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781509012107 ; , s. 3392-3397
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Konferensbidrag (refereegranskat)abstract
- The Silicon Carbide (SiC) MOSFET is considered to be the leading candidate for future 1.7 kV and 3.3 kV switches in 2-level voltage source converters (VSC) up to 2 MW. For those converters, short circuit (SC) in the dc-link loop can occur due to a number of reasons, e.g. faulty semiconductor modules, faulty gate drivers (GDs), or electro-magnetic interference (EMI). Termination of such SCs is important in order to protect components and reduce the damage in the converter box. This paper presents a new short circuit protection scheme based on a universal current-source GD principle without dedicated hardware components. The performance of the design is evaluated for SC in the dc-link loop under load conditions, called type II and type III. Moreover, measurement results are presented using the proposed GD connected to a 1700 V 300 A SiC MOSFET tested during SC type II and III at two different dc-link stray inductances, 30 nH and 100 nH, and at two different temperatures, 25 °C and 125 °C. The conclusions are that the proposed scheme is able to terminate both SC type II and III with fast reaction time, with low energy dissipation, with a margin of about 15 times below the destructive level for dc-link voltages and load currents up to 1050 V and 300 A respectively.
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