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- Callaway, EM, et al.
(författare)
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A multimodal cell census and atlas of the mammalian primary motor cortex
- 2021
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 1476-4687 .- 0028-0836. ; 598:7879, s. 86-102
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Tidskriftsartikel (refereegranskat)abstract
- Here we report the generation of a multimodal cell census and atlas of the mammalian primary motor cortex as the initial product of the BRAIN Initiative Cell Census Network (BICCN). This was achieved by coordinated large-scale analyses of single-cell transcriptomes, chromatin accessibility, DNA methylomes, spatially resolved single-cell transcriptomes, morphological and electrophysiological properties and cellular resolution input–output mapping, integrated through cross-modal computational analysis. Our results advance the collective knowledge and understanding of brain cell-type organization1–5. First, our study reveals a unified molecular genetic landscape of cortical cell types that integrates their transcriptome, open chromatin and DNA methylation maps. Second, cross-species analysis achieves a consensus taxonomy of transcriptomic types and their hierarchical organization that is conserved from mouse to marmoset and human. Third, in situ single-cell transcriptomics provides a spatially resolved cell-type atlas of the motor cortex. Fourth, cross-modal analysis provides compelling evidence for the transcriptomic, epigenomic and gene regulatory basis of neuronal phenotypes such as their physiological and anatomical properties, demonstrating the biological validity and genomic underpinning of neuron types. We further present an extensive genetic toolset for targeting glutamatergic neuron types towards linking their molecular and developmental identity to their circuit function. Together, our results establish a unifying and mechanistic framework of neuronal cell-type organization that integrates multi-layered molecular genetic and spatial information with multi-faceted phenotypic properties.
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- Zhang, JT, et al.
(författare)
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Up-regulation of PINCH in the stroma of oral squamous cell carcinoma predicts nodal metastasis
- 2005
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Ingår i: Oncology Reports. - 1021-335X .- 1791-2431. ; 14:6, s. 1519-1522
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Tidskriftsartikel (refereegranskat)abstract
- Particularly interesting new cysteine-histidine rich protein (PINCH), an adapter protein involved in integrin and growth factor signalling, is up-regulated in the stroma of colorectal, breast, prostate, lung and skin cancer. Strong stromal immunostaining for PINCH is an independent prognostic indicator for reduced survival in colorectal cancer, suggesting that PINCH is involved in the signalling that promotes tumour progression. Since no study on PINCH has been carried out in oral squamous cell carcinoma (OSCC), this study aimed to determine PINCH expression in OSCC and its clinicopathological significance. PINCH protein expression was examined by immunohistochemistry in 20 normal oral mucosa and in 57 OSCC specimens, The frequency of strong PINCH immunostaining was higher in tumour-associated stroma of OSCC (37%) as compared to normal oral mucosa (10%) (p=0.02). Strong PINCH stromal immunostaining predicted nodal metastasis: 19/26 (73%) OSCC cases with nodal metastasis had strong PINCH immunostaining compared to 9/31 (29%) cases without nodal metastasis (p=0.02). The PINCH expression in OSCC was more intense in stroma at the invasive edge than in intratumoural stroma. In conclusion, the up-regulation of PINCH protein in stroma may be involved in promoting invasion and metastasis in OSCC.
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- Jacob, AP, et al.
(författare)
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Hydrogen passivation of self assembled InAs quantum dots
- 2002
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Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 92:11, s. 6794-6798
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Tidskriftsartikel (refereegranskat)abstract
- A systematic study on the hydrogen passivation of nonradiative centers in InAs quantum dots grown on GaAs substrates is presented. The samples used in this study were grown by molecular beam epitaxy. The structures contain an InxGa1-xAs insertion layer between the InAs quantum dots layer and the GaAs cap layer. The thickness and In concentration of the InxGa1-xAs are varied to achieve the emission wavelength at 1.3 mum. The samples after the H-2 plasma treatment show a significant increase of the photoluminescence intensity. The experimental results show that the quality of the InAs quantum dot structures does not degrade after the hydrogen (H-2) plasma treatments. The enhancement of the photoluminescence intensity from the InAs quantum dots is thought to be due to the passivation of nonradiative centers like defects in the structures. High resolution x-ray diffraction rocking curves are used to correlate photoluminescence results.
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- Wang, K, et al.
(författare)
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Long-term anti-inflammatory diet in relation to improved breast cancer prognosis: a prospective cohort study
- 2020
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Ingår i: NPJ breast cancer. - : Springer Science and Business Media LLC. - 2374-4677. ; 6:1, s. 36-
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Tidskriftsartikel (refereegranskat)abstract
- Inflammation-modulating nutrients and inflammatory markers are established cancer risk factors, however, evidence regarding the association between post-diagnosis diet-associated inflammation and breast cancer survival is relatively sparse. We aimed to examine the association between post-diagnosis dietary inflammatory index (DII®) and risks of all-cause and breast cancer-specific mortality. A total of 1064 female breast cancer survivors in the Prostate, Lung, Colorectal, and Ovarian Cancer Screening (PLCO) Trial prospective cohort, were included in this analysis if they had completed the diet history questionnaire (DHQ). Energy-adjusted DII (E-DIITM) scores were calculated based on food and supplement intake. Cox regression and competing risk models were used to estimate multivariable-adjusted hazards ratios (HRs) and 95% confidence intervals (95% CIs) by E-DII tertile (T) for all-cause and breast cancer-specific mortality. With median follow-up of 14.6 years, there were 296 (27.8%) deaths from all causes and 100 (9.4%) breast cancer-specific death. The E-DII was associated with all-cause mortality (HR T3 vs T1, 1.34; 95% CI, 1.01–1.81; Ptrend, 0.049, Table 2) and breast cancer mortality (HR T3 vs T1, 1.47; 95% CI, 0.89–2.43; Ptrend, 0.13; multivariable-adjusted HR for 1-unit increment: 1.10; 95% CI: 1.00–1.22). Non-linear positive dose–response associations with mortality from all causes were identified for E-DII scores (Pnon-linearity < 0.05). The post-diagnosis E-DII was statistically significantly associated with mortality risk among breast cancer survivors. Long-term anti-inflammatory diet might be a means of improving survival of breast cancer survivors.
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- Zhao, QX, et al.
(författare)
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Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAs/GaAs quantum well structures
- 2005
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Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 86:12
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Tidskriftsartikel (refereegranskat)abstract
- We report results from investigation of the optical properties of GaNAs/GaAs quantum well structures. The structures were grown by molecular-beam epitaxy at different temperatures, and subsequently postgrowth thermal treatments at different temperature were performed. The results show that the carrier localization is smaller in a structure grown at a temperature of 580 degrees C in comparison with a structure grown at 450 degrees C. Both structures also show a broaden deep level emission band. Furthermore, the deep level emission band and the carrier localization effect can be removed by thermal annealing at 650 degrees C in the structure grown at 450 degrees C. The structure quality and radiative recombination efficiency are significantly improved after annealing. However, annealing under the same condition has a negligible effect on the structure grown at 580 degrees C. (C) 2005 American Institute of Physics.
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| 18. |
- Zhao, QX, et al.
(författare)
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Effects of nitrogen incorporation on the properties of GaInNAs/GaAs quantum well structures
- 2005
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Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 97:7
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Tidskriftsartikel (refereegranskat)abstract
- We report results from theoretical and experimental investigations of GaInNAs/GaAs quantum well structures. Optical transition energies for samples with different In and N concentrations were determined by photoluminescence measurements. The results show that the reduction of the ground-state transition energy by the introduction of N decreases with increasing In concentration. The experimental data are compared with calculations using the effective-mass approximation. Modifications of the band-gap energy due to N incorporation were accounted for using the two-level repulsion model. Proper effective-mass and band offset values, based on recent experimental work, were used. Calculated and measured transition energies show good agreement. The critical thickness, lattice constant, strain, and optical transition energies are discussed for GaInNAs/GaAs quantum well structures tuned for emission at 1.3 and 1.55 mu m, in particular. Such a simple model, within the effective-mass approximation, is a very useful guide for device design. (C) 2005 American Institute of Physics.
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| 19. |
- Zhao, QX, et al.
(författare)
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Nonradiative centers in InAs dots grown on GaAs substrates for 1.3 mu m emission
- 2003
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Ingår i: Physics Letters A. - : Elsevier Science B.V., Amsterdam.. - 0375-9601 .- 1873-2429. ; 315:02-Jan, s. 150-155
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Tidskriftsartikel (refereegranskat)abstract
- Nonradiative centers in InAs dots grown on GaAs substrates are investigated in this study. The emission from InAs dots close to 1.3 mum is monitored under different excitation densities and different excitation energy. The used samples were also treated by hydrogen plasma in order to suppress the nonradiative centers. The purpose of this work is to study how nonradiative centers influence the efficiency of InAs dots emission and whether the nonradiative centers can be reduced. Our results clearly illustrate that there indeed exist nonradiative centers, both at the interface between the InAs dots and surrounding layers and in the GaAs layers, which can be suppressed by H-treatments. A technique to estimate relative amount of nonradiative centers is also discussed.
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| 20. |
- Zhao, QX, et al.
(författare)
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Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization
- 2005
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Ingår i: Physics Letters A. - : Elsevier Science B.V., Amsterdam.. - 0375-9601 .- 1873-2429. ; 341:04-Jan, s. 297-302
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Tidskriftsartikel (refereegranskat)abstract
- The radiative recombination in InxGa1-xN0.01As0.99/GaAs quantum well structures exhibiting strong carrier localization was investigated by optical spectroscopy. For In-concentration from 0 to 30%, the results indicate that the degree of carrier localization decreases with increasing In-concentration. At temperatures below 100 K, the mobility edge excitons as well as localized excitons are identified and their transitions energies strongly depend on the excitation intensity. At elevated temperatures the localized excitons become quenched. The temperature dependence of the photoluminescence emission energy shows different behaviors at different excitation intensities.
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| 21. |
- Zhao, QX, et al.
(författare)
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Strong enhancement of the photoluminescence-efficiency from InAs quantum dots
- 2003
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Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 93:3, s. 1533-1536
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Tidskriftsartikel (refereegranskat)abstract
- InAs quantum dots (QDs) have been investigated using optical spectroscopy, in order to understand the experimental observation of strong enhancement of their photoluminescence efficiency. When a tunneling barrier is introduced between the, InAs layer and the GaAs cap layer, the intensity of the InAs QD emission increases by more than an order of magnitude at the excitation density of 60 W/cm(2). The enhancement of the optical recombination efficiency is due to the suppression of the nonradiative transitions in the wetting layer. The strong enhancement of the InAs emission can lead to an increase in the optical gain of the InAs laser structure
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