| 1. |
- Andric, Stefan, et al.
(författare)
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Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
- 2022
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480. ; 70:2, s. 1284-1291
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Tidskriftsartikel (refereegranskat)abstract
- Lateral III-V nanowire (NW) MOSFETs are a promising candidate for high-frequency electronics. However, their circuit performance is not yet assessed. Here, we integrate lateral nanowires (LNWs) in a circuit environment and characterize the transistors and amplifiers. MOSFETs are fabricated in a simple scheme with a dc transconductance of up to 1.3 mS/μm, ON-resistance down to 265 Ω · μ m, and cutoff frequencies up to 250 GHz, measured on the circuit level. The circuit model estimates 25% device parasitic capacitance increase due to back-end-of-line (BEOL) dielectric cladding. A low-noise amplifier input stage is designed with optimum network design for a noise matched input and an inductive peaking output. The input stage shows up to 4-dB gain and 2.5-dB noise figure (NF), at 60 GHz. Utilizing gate-length scaling in the circuit environment, the obtained normalized intrinsic gate capacitance value of 0.34-aF/nm gate length, per NW, corresponds well to the predicted theoretical value, demonstrating the circuit's ability to provide intrinsic device parameters. This is the first mm-wave validation of noise models for III-V LNW MOSFETs. The results demonstrate the potential for utilization of the technology platform for low-noise applications.
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| 2. |
- Egard, Mikael, et al.
(författare)
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Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
- 2013
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Ingår i: 2013 International Conference on Indium Phosphide and Related Materials (IPRM). - 1092-8669. ; , s. 1-2
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Konferensbidrag (refereegranskat)abstract
- Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
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| 3. |
- Egard, Mikael, et al.
(författare)
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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:3, s. 369-371
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Tidskriftsartikel (refereegranskat)abstract
- We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.
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| 4. |
- Egard, Mikael, et al.
(författare)
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High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011
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Ingår i: 2011 IEEE International Electron Devices Meeting (IEDM). - 9781457705052
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Konferensbidrag (refereegranskat)abstract
- In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
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| 5. |
- Egard, Mikael, et al.
(författare)
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In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:7, s. 970-972
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Tidskriftsartikel (refereegranskat)abstract
- We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.
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| 6. |
- Egard, Mikael, et al.
(författare)
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Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
- 2011
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Ingår i: 69th Device Research Conference, DRC 2011 - Conference Digest. - 9781612842417
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Konferensbidrag (refereegranskat)abstract
- III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.
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| 7. |
- Folkersen, Lasse, et al.
(författare)
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Genomic and drug target evaluation of 90 cardiovascular proteins in 30,931 individuals.
- 2020
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Ingår i: Nature metabolism. - : Springer Science and Business Media LLC. - 2522-5812. ; 2:10, s. 1135-1148
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Tidskriftsartikel (refereegranskat)abstract
- Circulating proteins are vital in human health and disease and are frequently used as biomarkers for clinical decision-making or as targets for pharmacological intervention. Here, we map and replicate protein quantitative trait loci (pQTL) for 90 cardiovascular proteins in over 30,000 individuals, resulting in 451 pQTLs for 85 proteins. For each protein, we further perform pathway mapping to obtain trans-pQTL gene and regulatory designations. We substantiate these regulatory findings with orthogonal evidence for trans-pQTLs using mouse knockdown experiments (ABCA1 and TRIB1) and clinical trial results (chemokine receptors CCR2 and CCR5), with consistent regulation. Finally, we evaluate known drug targets, and suggest new target candidates or repositioning opportunities using Mendelian randomization. This identifies 11 proteins with causal evidence of involvement in human disease that have not previously been targeted, including EGF, IL-16, PAPPA, SPON1, F3, ADM, CASP-8, CHI3L1, CXCL16, GDF15 and MMP-12. Taken together, these findings demonstrate the utility of large-scale mapping of the genetics of the proteome and provide a resource for future precision studies of circulating proteins in human health.
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| 8. |
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| 9. |
- Fröberg, Linus, et al.
(författare)
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Vertical InAs nanowire wrap-gate FETs
- 2006
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Ingår i: Book of abstracts: Semicond Nanowires Symp, Eindhoven, The Netherlands (2006).
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Konferensbidrag (refereegranskat)
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| 10. |
- Krishnaraja, Abinaya, et al.
(författare)
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Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
- 2020
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Ingår i: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 2:9, s. 2882-2887
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Tidskriftsartikel (refereegranskat)abstract
- Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving steep switching. Thus far, such optimization has mainly been addressed theoretically. Here, we experimentally investigate the influence of the source segment composition on the performance for vertical nanowire InAs/InGaAsSb/GaSb TFETs. Compositional analysis using transmission electron microscopy is combined with simulations to interpret the results from electrical characterization data. The results show that subthreshold swing (S) and transconductance (gm) decrease with increasing arsenic composition until the strain due to lattice mismatch increases them both. The role of indium concentration at the junction is also examined. This systematic optimization has rendered sub-40 mV/dec operating TFETs with a record transconductance efficiency gm/ID = 100 V-1, and it shows that different source materials are preferred for various applications.
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| 11. |
- Lind, Erik, et al.
(författare)
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Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
- 2006
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 6:9, s. 1842-1846
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Tidskriftsartikel (refereegranskat)abstract
- An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.
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| 12. |
- Nilsson, Henrik, et al.
(författare)
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Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 110:6
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Tidskriftsartikel (refereegranskat)abstract
- We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3633742]
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| 13. |
- Ohlsson, Lars, et al.
(författare)
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Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
- 2010
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Ingår i: [Host publication title missing]. ; , s. 253-256
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Konferensbidrag (refereegranskat)abstract
- Methods to achieve admittance matching of rectangular dielectric resonator antennas intended for 60~GHz impulse radio are reported. The motivation is to find a suitable antenna that may be integrated in the V-band gated tunnel diode wavelet generator, replacing its tank circuit and forming a low complexity transmitter. Probed one- and two-port scattering parameter measurements have been performed to characterise the fabricated antennas. Changing the feed structure from a tapered dipole to an offset fed and tapered slot, a change from capacitive to inductive characteristics is observed, and the matching to the gated tunnel diode is improved. Deembedded admittance resonance frequencies of fabricated antennas were found at 53.6 and 52.2~GHz for dipole and slot fed antennas, respectively. Characterising the transmission link between dipole fed antennas, a maximum antenna gain of 10.5~dBi and a 3~dB power bandwidth of 1.5~GHz were found at 53.3~GHz.
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| 14. |
- Ohlsson, Lars, et al.
(författare)
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First InGaAs lateral nanowire MOSFET RF noise measurements and model
- 2017
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Ingår i: 75th Annual Device Research Conference, DRC 2017. - 9781509063277
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Konferensbidrag (refereegranskat)abstract
- The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.
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| 15. |
- Roll, Guntrade, et al.
(författare)
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RF and DC Analysis of Stressed InGaAs MOSFETs
- 2014
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 35:2, s. 181-183
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Tidskriftsartikel (populärvet., debatt m.m.)abstract
- A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-k interface are filled by cold carrier trapping when the transistor is turned on, whereas they do not respond at high frequencies.
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| 16. |
- Roll, Guntrade, et al.
(författare)
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RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
- 2013
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Ingår i: 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013. - 9781479903504 ; , s. 38-41
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Konferensbidrag (refereegranskat)abstract
- A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.
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| 17. |
- Thelander, Claes, et al.
(författare)
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Development of a Vertical Wrap-Gated InAs FET
- 2008
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383. ; 55:11, s. 3030-3036
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.
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| 18. |
- Wernersson, Lars-Erik, et al.
(författare)
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Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
- 2002
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Ingår i: Institute of Physics Conference Series. - 0951-3248. ; 170, s. 81-85
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Tidskriftsartikel (refereegranskat)abstract
- We report on the formation of an attractive potential around buried metal wires in a novel design for the Hot Electron Transistor (HET). In this device, the doped base layer in the HET is replaced by an embedded metal grating, which is forward biased beyond flat band conditions in order to efficiently extract carriers from the emitter into the active region. These carriers are collected in a Schottky Collector contact. By tuning the gate and collector voltages, the potential profile around the wires can be repulsive as well as attractive. This is a key result for the realisation of a Biprism device.
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| 19. |
- Wernersson, Lars-Erik, et al.
(författare)
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Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
- 2002
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Ingår i: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 20:2, s. 580-589
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Tidskriftsartikel (refereegranskat)abstract
- A processing scheme for the fabrication of embedded W-GaAs contacts has been established and the resulting contact characteristics have been evaluated. The main advantage of these contacts is that they are stable during high-temperature epitaxial overgrowth. The fabrication scheme is based on a liftoff process with electron beam evaporation of tungsten and subsequent epitaxial overgrowth using metalorganic vapor phase epitaxy. Various methods were used to characterize the buried contacts. First, the structural properties of GaAs surrounding embedded W features, with widths down to 50 nm, were characterized by high-resolution transmission electron microscopy. Measurements of the conductivity in individual, buried wires were performed in order to study the influence of the overgrowth process on the properties of the tungsten. We also evaluated the current-voltage characteristics for macroscopic contacts, which revealed a clear dependence on processing parameters. Optimized processing conditions could thus be established under which limited contact degradation occurred during overgrowth. Finally, we used the overgrowth technique to perform a detailed investigation of the electrical and optical properties of floating-potential embedded nano-Schottky contacts by space-charge spectroscopy.
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| 20. |
- Wernersson, Lars-Erik, et al.
(författare)
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III-V Nanowires-Extending a Narrowing Road
- 2010
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Ingår i: Proceedings of the IEEE. - 0018-9219. ; 98:12, s. 2047-2060
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are being fabricated by a combined bottom-up and top-down approach. Also, the first radio-frequency (RF)-implementations are reviewed and discussed.
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| 21. |
- Wernersson, Lars-Erik, et al.
(författare)
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Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
- 2002
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:10, s. 1841-1843
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Tidskriftsartikel (refereegranskat)abstract
- We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.
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| 22. |
- Wernersson, Lars-Erik, et al.
(författare)
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Nanowire field-effect transistor
- 2007
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Ingår i: Japanese Journal of Applied Physics. - 0021-4922. ; 46:4B, s. 2629-2631
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Tidskriftsartikel (refereegranskat)abstract
- A new processing scheme for the fabrication of sub-100-nm-gate-length vertical nanowire transistors has been developed. InAs transistors with an 11 x 11 nanowire matrix and 80 nm gate length have been realized by this process. The gate length is directly controlled via the thickness of the evaporated gate metal and is thus easily scalable. The demonstrated devices operate in depletion mode, and they show a maximum drive current of about 1 mA and a maximum transconductance of 0.52 mS at V-g = -0.5 V and V-d = 1 V.
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| 23. |
- Wernersson, Lars-Erik, et al.
(författare)
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Wrap-gated InAs nanowire field-effect transistor
- 2005
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Ingår i: International Electron Devices Meeting 2005. - 078039268X ; , s. 273-276
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Konferensbidrag (refereegranskat)abstract
- Field-effect transistors (FETs) based on semiconductor nanowires (Bryllert et al., 2005) have the potential to improve certain aspects of existing planar FET technologies. The possibility to form wrap-gates gives an efficient gate coupling resulting in reduced drain-induced barrier lowering. Furthermore, lateral strain relaxation allows a new freedom in combining materials in heterostructures, where materials with different lattice constants can be combined without defects (Bjork et al., 2002). Since the transistor channel, unlike the planar FETs, is vertical, heterostructures may be used to tailor the bandstructure along the direction of current flow. In this paper, we demonstrate a new technology to fabricate vertical nanowire FETs in a process that almost exclusively relies on optical lithography and standard III-V processing techniques. We measure encouraging electrical data, including current saturation at Vds ≡ 0.15 V (for Vg ≡ 0 V) and low voltage operation Vth ≡ -0.15 V, and present opportunities to improve the device performance by heterostructure design
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| 24. |
- Ärlelid, Mats, et al.
(författare)
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60 GHz impulse radio measurements
- 2011
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Ingår i: 2011 IEEE International Conference on Ultra-Wideband (ICUWB). - 2162-6588. - 9781457717635 ; , s. 536-540
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Konferensbidrag (refereegranskat)abstract
- The bit-error rate of a 60 GHz wireless impulse radio link is investigated at a bit-rate of 4 Gbps using on-off keying. The measurement results show that it is possible to have a BER below 10(-12), and the measured BER vs. E-b/N-o is approximately 1 dB from the theoretical value. The reliability of the wideband 60 GHz wavelet generator is furthermore confirmed by studying the number of faulty wavelets generated, and the circuit performance is characterized. The wavelet generator consumes 30 mW and may generate signals with bandwidth exceeding 25 GHz, which may be used to investigate the channel properties at 60 GHz.
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| 25. |
- Ärlelid, Mats, et al.
(författare)
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Impulse-based 4 Gbit/s radio link at 60 GHz
- 2011
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 47:7, s. 70-467
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Tidskriftsartikel (refereegranskat)abstract
- A 4 Gbit/s radio link using impulse-based on-off keying at 60 GHz is demonstrated. The input baseband signals are transferred to radio frequency wavelets through direct conversion, by switching a GaAs gated tunnel diode oscillator on and off. The wavelet generator drives an antenna directly without any buffer or power amplifier. The peak output power is - 11 dBm at a power consumption of 30 mW. The signals are detected with an energy detector and the link has a bit error rate < 10(-12) for distances shorter than 35 cm.
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