| 1. |
- Aristov, Victor Yu., et al.
(författare)
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Graphene Synthesis on Cubic SiC/Si Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices
- 2010
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 10:3, s. 992-995
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Tidskriftsartikel (refereegranskat)abstract
- The outstanding properties of graphene, a single graphite layer, render it a top candidate for substituting silicon in future electronic devices, The so far exploited synthesis approaches, however, require conditions typically achieved in specialized laboratories and result in graphene sheets whose electronic properties are often altered by interactions with substrate materials. The development of graphene-based technologies requires an economical fabrication method compatible with mass production. Here we demonstrate for the fist Lime the feasibility of graphene synthesis on commercially available cubic SiC/Si substrates of >300 mm in diameter, which result in graphene flakes electronically decoupled from the substrate. After optimization of the preparation procedure, the proposed synthesis method can represent a further big step toward graphene-based electronic technologies.
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| 2. |
- Cavar, Elizabeta, et al.
(författare)
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A single h-BN layer on Pt(111)
- 2008
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 602:9, s. 1722-1726
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Tidskriftsartikel (refereegranskat)abstract
- The structure and formation of an ultrathin hexagonal boron nitride (h-BN) film on Pt(111) has been studied by a combination of scanning tunneling microscopy, low energy electron diffraction, low energy electron microscopy, X-ray absorption and high resolution core level spectroscopy. The study shows that a single boron nitride layer is formed on Pt(111), resulting in a coincidence structure. High resolution scanning tunneling microscopy (STM) images of the h-BN ultrathin film display only one of the atomic species in the unit cell. Probing the boron and nitrogen related local density of states by near edge X-ray absorption fine structure measurements we conclude that the nitrogen sublattice is visible in STM images. The growth of the single hexagonal boron nitride layer by vapourized borazine in the pressure range of 1 x 10(-6)-1 x 10(-8) at 800 degrees C is further studied by low energy electron microscopy, and reveals that the number of nucleation sites and the perfection of the growth is strongly pressure dependent. A model for the single, hexagonal, boron nitride layer on Pt(111) is proposed.
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| 3. |
- Krasnikov, Sergey A., et al.
(författare)
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Formation of extended covalently bonded Ni porphyrin networks on the Au(111) surface
- 2011
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Ingår i: Nano Reseach. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 4:4, s. 376-384
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Tidskriftsartikel (refereegranskat)abstract
- The growth and ordering of {5,10,15,20-tetrakis(4-bromophenyl)porphyrinato}nickel(II) (NiTBrPP) molecules on the Au(111) surface have been investigated using scanning tunnelling microscopy, X-ray absorption, core-level photoemission, and microbeam low-energy electron diffraction. When deposited onto the substrate at room temperature, the NiTBrPP forms a well-ordered close-packed molecular layer in which the molecules have a flat orientation with the porphyrin macrocycle plane lying parallel to the substrate. Annealing of the NiTBrPP layer on the Au(111) surface at 525 K leads to dissociation of bromine from the porphyrin followed by the formation of covalent bonds between the phenyl substituents of the porphyrin. This results in the formation of continuous covalently bonded porphyrin networks, which are stable up to 800 K and can be recovered after exposure to ambient conditions. By controlling the experimental conditions, a robust, extended porphyrin network can be prepared on the Au(111) surface that has many potential applications such as protective coatings, in sensing or as a host structure for molecules and clusters.
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| 4. |
- Ng, May Ling, et al.
(författare)
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Effect of substrate nanopatterning on the growth and structure of pentacene films
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 81:11, s. 115449-
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Tidskriftsartikel (refereegranskat)abstract
- The effect of modulating the structure of thin pentacene (C22H14) films by a nanopatterned inert substrate, known as hexagonal boron nitride nanomesh, is reported. Films of different thickness are grown and characterized by x-ray absorption, core-level photoemission, low-energy electron microscopy, microbeam low-energy electron diffraction, and scanning tunneling microscopy. Initially the pentacene molecules adsorb with the molecular plane lying flat on the substrate but they tend to flip up with increasing coverage, forming well-ordered monolayer-thick islands of upright molecules with low nucleation density. The herringbone packing of the upright molecules is observed with scanning tunneling microscopy. The electronic structure of the adsorbed molecules is very similar to that of the gas-phase pentacene, implying weak interaction with the substrate and between the molecules. The periodic corrugation of the substrate surface causes the monolayer of upright pentacene molecules to form two different coincidence superstructures. The lattice parameters of the pentacene unit cell for each of these two substrate-induced domains are determined from the microdiffraction patterns. Both domains can occur in several equivalent configurations, thus resulting in a number of twins with a typical size of a few micrometers. The first monolayer grows in a layer-by-layer mode until it is completed while the second monolayer forms diffusion-limited fractal islands. Upon annealing, the pentacene films are thermally stable up to approximately 80 degrees C and thereafter the onset of desorption is observed.
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| 5. |
- Niu, Yuran, et al.
(författare)
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MAXPEEM : a spectromicroscopy beamline at MAX IV laboratory
- 2023
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Ingår i: Journal of Synchrotron Radiation. - 0909-0495. ; 30:Pt 2, s. 468-478
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Tidskriftsartikel (refereegranskat)abstract
- MAXPEEM, a dedicated photoemission electron microscopy beamline at MAX IV Laboratory, houses a state-of-the-art aberration-corrected spectroscopic photoemission and low-energy electron microscope (AC-SPELEEM). This powerful instrument offers a wide range of complementary techniques providing structural, chemical and magnetic sensitivities with a single-digit nanometre spatial resolution. The beamline can deliver a high photon flux of ≥1015 photons s−1 (0.1% bandwidth)−1 in the range 30–1200 eV with full control of the polarization from an elliptically polarized undulator. The microscope has several features which make it unique from similar instruments. The X-rays from the synchrotron pass through the first beam separator and impinge the surface at normal incidence. The microscope is equipped with an energy analyzer and an aberration corrector which improves both the resolution and the transmission compared with standard microscopes. A new fiber-coupled CMOS camera features an improved modulation transfer function, dynamic range and signal-to-noise ratio compared with the traditional MCP-CCD detection system.
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| 6. |
- Vinogradov, Nikolay, et al.
(författare)
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Formation and Structure of Graphene Waves on Fe(110)
- 2012
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Ingår i: Physical Review Letters. - 1079-7114 .- 0031-9007. ; 109:2
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Tidskriftsartikel (refereegranskat)abstract
- A very rich Fe-C phase diagram makes the formation of graphene on iron surfaces a challenging task. Here we demonstrate that the growth of graphene on epitaxial iron films can be realized by chemical vapor deposition at relatively low temperatures, and that the formation of carbides can be avoided in excess of the carbon-containing precursors. The resulting graphene monolayer creates a novel periodically corrugated pattern on Fe(110). Using low-energy electron microscopy and scanning tunneling microscopy, we show that it is modulated in one dimension forming long waves with a period of similar to 4 nm parallel to the [001] direction of the substrate, with an additional height modulation along the wave crests. The observed topography of the graphene/Fe superstructure is well reproduced by density functional theory calculations, and found to result from a unique combination of the lattice mismatch and strong interfacial interaction, as probed by core-level photoemission and x-ray absorption spectroscopy.
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| 7. |
- Vinogradov, Nikolay, et al.
(författare)
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Hole doping of graphene supported on Ir(111) by AlBr3
- 2013
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Ingår i: Applied Physics Letters. - : American Chemical Society (ACS). - 0003-6951 .- 1077-3118. ; 102:6, s. 061601-
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Tidskriftsartikel (refereegranskat)abstract
- In this Letter we report an easy and tenable way to tune the type of charge carriers in graphene, using a buried layer of AlBr3 and its derivatives on the graphene/Ir(111) interface. Upon the deposition of AlBr3 on graphene/Ir(111) and subsequent temperature-assisted intercalation of graphene/Ir(111) with atomic Br and AlBr3, pronounced hole doping of graphene is observed. The evolution of the graphene/Br-AlBr3/Ir(111) system at different stages of intercalation has been investigated by means of microbeam low-energy electron microscopy/electron diffraction, core-level photoelectron spectroscopy and angle-resolved photoelectron spectroscopy.
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| 8. |
- Vinogradov, Nikolay, et al.
(författare)
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One-Dimensional Corrugation of the h-BN Monolayer on Fe(110)
- 2012
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Ingår i: Langmuir. - : American Chemical Society (ACS). - 0743-7463 .- 1520-5827. ; 28:3, s. 1775-1781
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Tidskriftsartikel (refereegranskat)abstract
- We report on a new nanopatterned structure represented by a single atomic layer of hexagonal boron nitride (h-BN) forming long periodic waves on the Fe(110) surface. The growth process and the structure of this system are characterized by X-ray absorption (XAS), core-level photo-emission spectroscopy (CL PES), low-energy electron microscopy (LEEM), microbeam low-energy electron diffraction (mu LEED), and scanning tunneling microscopy (STM). The h-BN monolayer on Fe(110) is periodically corrugated in a wavy fashion with an astonishing degree of long-range order, periodicity of 2.6 nm, and the corrugation amplitude of A. The wavy pattern results from a strong chemical bonding between h-BN and Fe in combination with a lattice mismatch in either [(1) over bar 11] or [1 (1) over bar1] direction of the Fe(110) surface. Two primary orientations of h-BN on Fe(110) can be observed corresponding to the possible directions of lattice match between h-BN and Fe(110), with approximately equal area of the boron nitride domains of each orientation.
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| 9. |
- Ali-Loytty, H., et al.
(författare)
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Influence of precipitation on initial high-temperature oxidation of Ti-Nb stabilized ferritic stainless steel SOFC interconnect alloy
- 2012
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Ingår i: International Journal of Hydrogen Energy. - : Elsevier BV. - 1879-3487 .- 0360-3199. ; 37:19, s. 14528-14535
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Tidskriftsartikel (refereegranskat)abstract
- Oxidation phenomena on Laves phase forming Ti-Nb stabilized ferritic stainless steel (EN 1.4509) were studied at 650 degrees C by electron microscopic and electron spectroscopic methods. These investigations reveal a strong competition between Nb and Si for interfacial oxidation at the oxide metal interface that is affected by different segregation rates of Nb and Si at elevated temperatures. In particular, formation of Si containing Laves (FeNbSi)-type intermetallic compounds in the bulk results in non-uniform distribution of Si oxide at the interface. This has direct implications to the electrical properties of this alloy in solid oxide fuel cell (SOFC) applications. Furthermore, these results provide better understanding to the controversial role of second phases (e.g. Laves, chi) on high-temperature oxidation (as recently discussed by Dae Won Yon, Hyung Suk Seo, Jae Ho Jae Myung Lee, Do Hyuong Kim, Kyoo Young Kim in Int J Hydrogen Energy 2011;36:5595-5603). Copyright (C) 2012, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
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| 10. |
- Ali-Löytty, Harri, et al.
(författare)
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The role of (FeCrSi)2(MoNb)-type Laves phase on the formation of Mn-rich protective oxide scale on ferritic stainless steel
- 2018
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Ingår i: Corrosion Science. - : Elsevier BV. - 0010-938X. ; 132, s. 214-222
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Tidskriftsartikel (refereegranskat)abstract
- Microalloying of stainless steel with reactive elements increases oxidation resistance but makes the alloy prone to microstructural changes. XPS results reveal changes in the initial oxidation mechanism on Ti-Nb stabilized ferritic stainless steel (EN 1.4521) after 120 h heat treatment at 650 °C. Age-precipitation of (FeCrSi)2(MoNb)-type Laves phase resulted in less pronounced surface segregation and oxidation of microalloying elements. Si oxidizes preferentially at the Laves precipitate locations via outward diffusion forming diffusion barrier for the other scale forming elements. Most significantly the diffusion of Mn and the formation of low volatile (Mn,Cr)3O4 spinel oxide at the surface was strongly suppressed.
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| 11. |
- Allaf Navirian, Hengameh, et al.
(författare)
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Repetitive ultrafast melting of InSb as an x-ray timing diagnostic
- 2008
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Ingår i: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 103:10, s. 6-103510
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Tidskriftsartikel (refereegranskat)abstract
- We have demonstrated the possibility of using repetitive ultrafast melting of InSb as a timing diagnostic in connection with visible-light pump/x-ray probe measurements at high-repetition-rate x-ray facilities. Although the sample was molten and regrown approximately 1x10(6) times, a distinct reduction in time-resolved x-ray reflectivity could be observed using a streak camera with a time resolution of 2.5 ps. The time-resolved x-ray reflectivity displayed this distinct decrease despite the fact that the average reflectivity of the sample had fallen to approximately 50% of its original value due to accumulated damage from the prolonged laser exposure. The topography of the laser-exposed sample was mapped using an optical microscope, a stylus profilometer, photoelectron microscopy, and a scanning tunneling microscope. Although the surface of the sample is not flat following prolonged exposure at laser fluences above 15 mJ/cm(2), the atomic scale structure regrows, and thus, regenerates the sample on a nanosecond timescale. In the fluence range between 15 and 25 mJ/cm(2), the laser power is sufficient to melt the sample, while regrowth occurs with a sufficiently good structure to allow the extraction of timing information via ultrafast time-resolved x-ray measurements. This can be applied for timing purposes at synchrotron radiation and x-ray free-electron laser facilities. It is also noteworthy that we were able to reproduce the fluence dependencies of melting depth and disordering time previously obtained in single-shot, nonthermal melting experiments with higher temporal resolution.
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| 12. |
- Aprojanz, Johannes, et al.
(författare)
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Ballistic tracks in graphene nanoribbons
- 2018
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 9:1
-
Tidskriftsartikel (refereegranskat)abstract
- High quality graphene nanoribbons epitaxially grown on the sidewalls of silicon carbide (SiC) mesa structures stand as key building blocks for graphene-based nanoelectronics. Such ribbons display 1D single-channel ballistic transport at room temperature with exceptionally long mean free paths. Here, using spatially-resolved two-point probe (2PP) measurements, we selectively access and directly image a range of individual transport modes in sidewall ribbons. The signature of the independently contacted channels is a sequence of quantised conductance plateaus for different probe positions. These result from an interplay between edge magnetism and asymmetric terminations at opposite ribbon edges due to the underlying SiC structure morphology. Our findings demonstrate a precise control of transport through multiple, independent, ballistic tracks in graphene-based devices, opening intriguing pathways for quantum information device concepts.
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| 13. |
- Aprojanz, Johannes, et al.
(författare)
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Nanoscale imaging of electric pathways in epitaxial graphene nanoribbons
- 2019
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Ingår i: Nano Research. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 12:7, s. 1697-1702
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Tidskriftsartikel (refereegranskat)abstract
- Graphene nanoribbons (GNRs) are considered as major building blocks in future carbon-based electronics. The electronic performance of graphene nanostructures is essentially influenced and determined by their edge termination and their supporting substrate. In particular, semi-conducting, as well as metallic GNRs, can be fabricated by choosing the proper template which is favorable for device architecture designs. This study highlights the impact of microscopic details of the environment of the GNRs on the charge transport in GNRs. By means of lateral force, conductive atomic force and nanoprobe measurements, we explore the charge propagation in both zig-zag and armchair GNRs epitaxially grown on SiC templates. We directly image transport channels on the nanoscale and identify SiC substrate steps and nano-instabilities of SiC facets as dominant charge scattering centers. [Figure not available: see fulltext.].
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| 14. |
- Armakavicius, Nerijus, et al.
(författare)
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Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect
- 2021
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Ingår i: Carbon. - : Elsevier BV. - 0008-6223 .- 1873-3891. ; 172, s. 248-259
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we demonstrate the application of terahertz-optical Hall effect (THz-OHE) to determine directionally dependent free charge carrier properties of ambient-doped monolayer and quasi-free-standing-bilayer epitaxial graphene on 4H–SiC(0001). Directionally independent free hole mobility parameters are found for the monolayer graphene. In contrast, anisotropic hole mobility parameters with a lower mobility in direction perpendicular to the SiC surface steps and higher along the steps in quasi-free-standing-bilayer graphene are determined for the first time. A combination of THz-OHE, nanoscale microscopy and optical spectroscopy techniques are used to investigate the origin of the anisotropy. Different defect densities and different number of graphene layers on the step edges and terraces are ruled out as possible causes. Scattering mechanisms related to doping variations at the step edges and terraces as a result of different interaction with the substrate and environment are discussed and also excluded. It is suggested that the step edges introduce intrinsic scattering in quasi-free-standing-bilayer graphene, that is manifested as a result of the higher ratio between mean free path and average terrace width parameters. The suggested scenario allows to reconcile existing differences in the literature regarding the anisotropic electrical transport in epitaxial graphene.
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| 15. |
- Baringhaus, J., et al.
(författare)
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Bipolar gating of epitaxial graphene by intercalation of Ge
- 2014
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 104:26
-
Tidskriftsartikel (refereegranskat)abstract
- In this study, the ambivalent behavior of Ge intercalation is studied by means of scanning tunneling microscopy and spectroscopy as well as local 4-point probe transport measurements. In quantitative agreement with angle-resolved photoemission experiments, both p-and n-type doped graphene areas and their doping level were identified by local spectroscopy. The p-doped areas appear higher by 2 angstrom with respect to the n-doped areas suggesting incorporation of thicker Ge-layers accompanied by a modified coupling to the initial SiC-surface. Furthermore, the sheet resistance was measured on each of the patches separately. The intrinsic imbalance between the carrier types in the different areas is well reflected by the transport study. The process of intercalation does not affect the transport properties in comparison to pristine graphene pointing to a sufficient homogeneity of the decoupled graphene layer. Transport measurements across chemically gated pn-junctions reveal increased resistances, possibly due to enlarged tunneling barriers. (C) 2014 AIP Publishing LLC.
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| 16. |
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| 17. |
- Bertolo, M, et al.
(författare)
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Photoemission spectromicroscopy study of a Bi2Sr2CaCu2O8+delta single crystal
- 2003
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Ingår i: Journal de Physique IV - Proceedings. - : EDP Sciences. - 1155-4339 .- 1764-7177. ; 104, s. 487-490
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Konferensbidrag (refereegranskat)abstract
- Using photoemission spectromicroscopy at sub-micron lateral resolution we studied two superconductor systems of high fundamental and practical importance, such as Bi2Sr2CaCu2O8+delta and MgB2. Our findings demonstrate the importance of considering, for this class of systems, the possible presence of spatial inhomogeneities in interpreting the results of conventional photoemission experiments, which typically probe an area of the order of 1 mm(2). In particular, in the case of MgB2, we report a measured density of states directly comparable to the theoretical predictions, thus rejecting the claim for the existence of strong correlation effects proposed by previous spatially averaged measurements.
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| 18. |
- Boix, Virgínia, et al.
(författare)
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Area-selective Electron-beam induced deposition of Amorphous-BNx on graphene
- 2021
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332. ; 557, s. 149806-149806
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Tidskriftsartikel (refereegranskat)abstract
- Thin, stable and inert dielectric spacers are essential for manufacturing electronic devices based on 2D materials. However, direct synthesis on top of 2D materials is difficult due to their inert nature. In this work, we studied how an electron beam induces fragmentation of borazine and enables spatially confined synthesis of amorphous-BNx on graphene at room temperature. Using a combination of X-ray Photoelectron Spectroscopy, Low Energy Electron Microscopy, and Scanning Tunneling Microscopy we studied the morphology of the heterostructure, its chemical composition, and finally its temperature evolution. We find that electron-beam induced deposition starts by the binding of heavily fragmentized borazine, including atomic boron, followed by the growth of a multilayer with a 1:0.7 B:N ratio. The final structure exhibits a thermal stability up to 1400 K and ~ 50 nm spatial control provided by the electron beam. Our studies provide surface science insight into the use of electron beams for synthesis and lateral control of stable and inert layers in 2D heterostructures.
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| 19. |
- Bokai, Kirill A., et al.
(författare)
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Visualization of graphene grain boundaries through oxygen intercalation
- 2021
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332. ; 565
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Tidskriftsartikel (refereegranskat)abstract
- Efficient control over the grain boundaries (GBs) is a vital aspect in optimizing the graphene growth conditions. A number of methods for visualization of GBs were developed for graphene grown on weakly interacting surfaces. Here, we utilize oxygen intercalation to reveal GBs and study their morphology for graphene strongly bound to the cobalt surface. We demonstrate that upon the intercalation of oxygen, GBs in polycrystalline graphene become easily detectable due to graphene cracking and selective oxidation of the substrate, thus giving a direct insight into the graphene micro- and nanostructure by means of different electron microscopy methods, including scanning electron microscopy, photoemission microscopy and low-energy electron microscopy.
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| 20. |
- Bouhafs, Chamseddine, et al.
(författare)
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Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper
- 2021
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Ingår i: Carbon. - : Elsevier BV. - 0008-6223. ; 177, s. 282-290
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Tidskriftsartikel (refereegranskat)abstract
- Rhombohedral-stacked few-layer graphene (FLG) displays peculiar electronic properties that could lead to phenomena such as high-temperature superconductivity and magnetic ordering. To date, experimental studies have been mainly limited by the difficulty in isolating rhombohedral FLG with thickness exceeding 3 layers and device-compatible size. In this work, we demonstrate the synthesis and transfer of rhombohedral graphene with thickness up to 9 layers and areas up to ∼50 μm2. The domains of rhombohedral FLG are identified by Raman spectroscopy and are found to alternate with Bernal regions within the same crystal in a stripe-like configuration. Near-field nano-imaging further confirms the structural integrity of the respective stacking orders. Combined spectroscopic and microscopic analyses indicate that rhombohedral-stacking formation is strongly correlated to the underlying copper step-bunching and emerges as a consequence of interlayer displacement along preferential crystallographic orientations. The growth and transfer of rhombohedral FLG with the reported thickness and size shall facilitate the observation of predicted unconventional physics and ultimately add to its technological relevance.
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| 21. |
- Chaika, Alexander N., et al.
(författare)
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Continuous wafer-scale graphene on cubic-SiC(001)
- 2013
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Ingår i: Nano Reseach. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 6:8, s. 562-570
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Tidskriftsartikel (refereegranskat)abstract
- The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC(001)/Si(001) wafers have been studied by low energy electron microscopy (LEEM), scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and angle resolved photoelectron spectroscopy (ARPES). LEEM and STM data prove the wafer-scale continuity and uniform thickness of the graphene overlayer on SiC(001). LEEM, STM and ARPES studies reveal that the graphene overlayer on SiC(001) consists of only a few monolayers with physical properties of quasi-freestanding graphene. Atomically resolved STM and micro-LEED data show that the top graphene layer consists of nanometersized domains with four different lattice orientations connected through the aOE (c) 110 >-directed boundaries. ARPES studies reveal the typical electron spectrum of graphene with the Dirac points close to the Fermi level. Thus, the use of technologically relevant SiC(001)/Si(001) wafers for graphene fabrication represents a realistic way of bridging the gap between the outstanding properties of graphene and their applications.
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| 22. |
- Chaika, Alexander N., et al.
(författare)
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Rotated domain network in graphene on cubic-SiC(001)
- 2014
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:13
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Tidskriftsartikel (refereegranskat)abstract
- The atomic structure of the cubic-SiC(001) surface during ultra-high vacuum graphene synthesis has been studied using scanning tunneling microscopy (STM) and low-energy electron diffraction. Atomically resolved STM studies prove the synthesis of a uniform, millimeter-scale graphene overlayer consisting of nanodomains rotated by +/- 13.5 degrees relative to the < 110 >-directed boundaries. The preferential directions of the domain boundaries coincide with the directions of carbon atomic chains on the SiC(001)-c(2 x 2) reconstruction, fabricated prior to graphene synthesis. The presented data show the correlation between the atomic structures of the SiC(001)-c(2 x 2) surface and the graphene/SiC(001) rotated domain network and pave the way for optimizing large-area graphene synthesis on low-cost cubic-SiC(001)/Si(001) wafers.
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| 23. |
- Colakerol, L, et al.
(författare)
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Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN
- 2006
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Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048. ; 152:1-2, s. 25-28
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Tidskriftsartikel (refereegranskat)abstract
- Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.
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| 24. |
- Coletti, C., et al.
(författare)
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Large area quasi-free standing monolayer graphene on 3C-SiC(111)
- 2011
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 99:8
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Tidskriftsartikel (refereegranskat)abstract
- Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]
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| 25. |
- Coletti, C., et al.
(författare)
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Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
- 2013
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 88:15
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Tidskriftsartikel (refereegranskat)abstract
- In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on alpha-SiC(0001) and beta-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
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