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1.
  • Chen, Weimin, et al. (författare)
  • Point defects in dilute nitride III-N-As and III-N-P
  • 2006
  • Konferensbidrag (refereegranskat)abstract
    • We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride system s-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As-Ga, antisites and Ga-i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides. (c) 2005 Elsevier B.V. All rights reserved.
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2.
  • Darakchieva, Vanya, et al. (författare)
  • Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior
  • 2003
  • Konferensbidrag (refereegranskat)abstract
    • The effect of film thickness on the strain and structural properties of thin epitaxial AlN films has been investigated, and a sub-layer model of the degree of strain and related defects for all films is suggested. The vibrational properties of the films have been studied by generalized infrared spectroscopic ellipsometry. The proposed sub-layer model has been successfully applied to the analysis of the ellipsometry data trough model calculations of the infrared dielectric function. © 2003 Elsevier B.V. All rights reserved.
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  • Resultat 1-2 av 2
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refereegranskat (2)
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Birch, Jens (1)
Darakchieva, Vanya (1)
Paskova, Tanja (1)
Monemar, Bo (1)
Kasic, A. (1)
Schubert, M. (1)
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Chen, Weimin (1)
Buyanova, Irina (1)
Tu, CW (1)
Yonezu, H. (1)
Tungasmita, Sukkanes ... (1)
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