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1.
  • Ausmees, A., et al. (författare)
  • Secondary photoelectron spectra of NaCl and KBr excited by XUV radiation : Experiments and computer simulations
  • 1990
  • Ingår i: Solid State Communications. - 0038-1098. ; 76:12, s. 1383-1386
  • Tidskriftsartikel (refereegranskat)abstract
    • Energy distributions of slow electrons (0 to 10eV) emitted by thin layers of NaCl and KBr irradiated by monochromatic XUV photons with various energies in the interval of 50 to 300 eV are measured. For all cases the photoelectron spectrum starts with an intense peak of slow secondaries and has a hot-secondary structure at the energies 1 to 5 eV. The smaller the photon absorption depth, the stronger is this structure. An attempt is made to reproduce such a behaviour of spectra by a Monte Carlo simulation of electron-electron and electron-phonon scattering sequences induced in solids by XUV photon absorption. It appears that for high-energy ( > 2 to 3 eV) conduction electrons the electron-phonon scattering is mainly due to acoustic phonons.
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2.
  • Hedin, Lars, et al. (författare)
  • Local exchange-correlation potentials
  • 1971
  • Ingår i: Solid State Communications. - : Elsevier BV. - 1879-2766 .- 0038-1098. ; 9:9, s. 537-541
  • Tidskriftsartikel (refereegranskat)abstract
    • Recent advances in the many-body theory of electrons in solids and in the theory of the interacting electron gas are used to construct explicit local effective potentials which incorporate the effects of correlation and exchange. For ground state properties we consider the scheme by Hohenberg, Kohn and Sham and provide data for the effective potential μxc. For excitation energies the corresponding potential Vxc is obtained from the self-energy of an electron gas and numerical data are provided for the construction of Vxc.
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3.
  • Hedin, Lars (författare)
  • Many-body effects in soft X-ray emission in metals
  • 1967
  • Ingår i: Solid State Communications. - : Elsevier BV. - 1879-2766 .- 0038-1098. ; 5:6, s. 451-454
  • Tidskriftsartikel (refereegranskat)abstract
    • Soft X-ray emission in metals is treated, taking many-body effects and the electron-hole attraction into account. An appropriate connection with electron gas results is made. The structure in the low energy tail due to many-body effects are discussed, and the existence of a new critical point is suggested.
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4.
  • Hedin, Lars, et al. (författare)
  • New structure in the single-particle spectrum of an electron gas
  • 1967
  • Ingår i: Solid State Communications. - : Elsevier BV. - 1879-2766 .- 0038-1098. ; 5:4, s. 237-239
  • Tidskriftsartikel (refereegranskat)abstract
    • Calculations of the one-electron Green's function give a single-particle spectrum where, besides the usual quasi-particles, a new peak of appreciable strength appears which corresponds to an electron coupled to real plasmons.
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5.
  • von Barth, Ulf, et al. (författare)
  • The effect of the core hole on X-ray emission spectra in simple metals
  • 1979
  • Ingår i: Solid State Communications. - : Elsevier BV. - 1879-2766 .- 0038-1098. ; 32:8, s. 645-649
  • Tidskriftsartikel (refereegranskat)abstract
    • Shows that one-particle calculations of X-ray spectra with and without the core hole can give drastically different results, indicating a breakdown of one-particle theory. Only emission spectra obtained in the absence of the core hole consistently show a close resemblance to experiment. The authors show, that this fact can be explained by the many-body theory of Nozieres and DeDominicis (1969). They are then able to give the first interpretation of the L2,3 satellite spectrum of sodium.(17 refs)
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6.
  • Andersson, Göran, et al. (författare)
  • Pressure dependence of the c-axis resistance of stage 2 SbCl5 intercalated graphite to 4 GPa
  • 1988
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 65:7, s. 735-738
  • Tidskriftsartikel (refereegranskat)abstract
    • The c-axis electrical resistance R has been measured under pressure up to 4 GPa (40 kbar) at room temperature for stage 2, HOPG-based SbCl5 intercalated graphite. In addition to the well known ordering transition at 0.3–0.5 GPa a second anomaly in R is observed above 1 GPa, corresponding to a further phase transition which is not completed until above 2.4 GPa. In all phases R depends more strongly on p for the intercalated material than for HOPG, and the total decrease in R is over 80% to 4 GPa.
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7.
  • Andersson, Ove, et al. (författare)
  • Thermal conductivity of low-density amorphous ice
  • 1994
  • Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 91:12, s. 985-988
  • Tidskriftsartikel (refereegranskat)abstract
    • The thermal conductivity λ of low-density amorphous ice was measured using the transient hot-wire method in the temperature range 70–135 K at a pressure of 0.1 GPa. The amorphous state was formed at 135 K by pressurising hexagonal ice up to about 1 GPa. The results for λ are roughly temperature and pressure independent and in magnitude about 0.6 W m−1 K−1, which is roughly equal to λ for water. These results for λ of amorphous ice are several orders of magnitude larger than those reported recently for a specimen prepared by a vapour deposition technique.
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8.
  • Anderssson, Magnus, et al. (författare)
  • NEUTRON-DIFFRACTION STUDIES OF INTERATOMIC DISTANCES IN THE Y1-2XCAXTHXBA2CU3O7-DELTA SYSTEM
  • 1992
  • Ingår i: Solid State Communications. - 0038-1098 .- 1879-2766. ; 81:5, s. 425-429
  • Tidskriftsartikel (refereegranskat)abstract
    • Neutron diffraction studies have been performed for three samples of Y(1-2x)Ca(x)Th(x)Ba2Cu3O7-delta with 0 less-than-or-equal-to x less-than-or-equal-to 0.1. With increasing x, a decreased puckering of the Cu-O planes is found. Changes in copper oxygen distances are generally small. Evidence is found for a small increase in the distance between Cu(1) and O(4) (on the cell edge) with increased CaTh concentration. An increased oxygen disorder is observed at x = 0.1.
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9.
  • Bohlin, Leif, et al. (författare)
  • A comment on the thermal conductivity of insulating solids at high pressures
  • 1974
  • Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 14:8, s. 711-714
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of pressure on the thermal conductivity has been investigated theoretically fo atomic and polymeric solids. Specific numerical results are given and are compared with experiments for KCl, NaCl and AgCl and for polytetrafluoroethylene and low- and high-density polyethylene. We find the ratio of theory and experiment to be 1.5, 1.9 and 3.0 for the alkali halides, the ratio increases with increasing mass ratio. Corresponding values for the polymers are 1.0, 1.4 and 0.9.
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10.
  • Ferreira, Da Silva A., et al. (författare)
  • Characterization of asymmetric fragmentation patterns in SFM images of porous silicon
  • 2000
  • Ingår i: Solid State Communications. - 0038-1098 .- 1879-2766. ; 113:12, s. 703-708
  • Tidskriftsartikel (refereegranskat)abstract
    • Due to possible technological applications in opto-electronic devices, the interest in characterizing porous silicon structure patterns has recently increased. From scanning force microscopy (SFM) we have obtained images of different samples of porous silicon and applied pattern characterization operators on these matrices. In this paper, asymmetric spatial fragmentation in amplitude envelopes of porous silicon samples are characterized by means of a parameter that quantifies the amount of spatial asymmetry in the gradient field. The results show that this method is well suited to characterize silicon porosity quantitatively.
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11.
  • Fritzson, Peter, et al. (författare)
  • A pseudopotential calculation of the density of states of expanded crystalline mercury
  • 1976
  • Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 19:4, s. 385-387
  • Tidskriftsartikel (refereegranskat)abstract
    • The first calculation of the density of states of expanded crystalline Hg is reported for the f.c.c., b.c.c., and s.c. structures in the density range ∼ 4–9 g/cm3. The calculations are based on Animalu's local pseudopotential. It is found that a band gap opens up at 6.5 g/cm3 for f.c.c., 5.5 g/cm3 for b.c.c., and 4 g/cm3 for s.c.
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12.
  • Gustafsson, T., et al. (författare)
  • Evidence for breaking of the center of symmetry in zero-dimensional H-bonded quantum paraelectric Rb3H(SeO4)2
  • 2000
  • Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 115:9, s. 473-476
  • Tidskriftsartikel (refereegranskat)abstract
    • We show by means of single-crystal neutron-scattering that the space group of the quantum paraelectric Rb3H(SeO4)2 is not centrosymmetric A2/a as accepted so far, but noncentrosymmetric A2. The intensities of the reflections forbidden for the space group A2/a, (h 0 l): h≠2n, decrease with decreasing temperature. The refinement of the structure gave a systematically smaller discrepancy values in A2 than in A2/a. This makes it necessary to modify the commonly accepted fact that the space group is A2/a for most members of M3H(XO4)2-type crystals. The symmetry breaking is mainly due to the atoms directly connected to the O–H⋯O hydrogen-bond system, other parts being substantially unchanged. The possible origin of the temperature dependence of the intensities of the symmetry-breaking reflections is discussed.
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13.
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14.
  • Han, Shunhui, et al. (författare)
  • Study of the upper critical magnetic field HC2 of YBA2CU3O7-DELTA compounds
  • 1992
  • Ingår i: Solid State Communications. - 0038-1098 .- 1879-2766. ; 82:5, s. 379-380
  • Tidskriftsartikel (refereegranskat)abstract
    • Careful resistive measurements of the upper critical field H(c2) have been made on high quality polycrystalline YBa2Cu3O7-delta samples in magnetic fields up to 12 T. The data have been fitted on the form H(c2) infinity (T(c)-T)alpha to compare with theoretical models. A cusp is found in the H(c2) (T) curve for both of the samples. Different exponents-alpha are obtained depending on the temperature range used in the fitting procedure.
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15.
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16.
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17.
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18.
  • Isidorsson, Jan, et al. (författare)
  • Ion transport in porous Sn oxide films : Cyclic voltammetry interpreted in terms of a fractal dimension
  • 1996
  • Ingår i: Solid State Communications. - 0038-1098 .- 1879-2766. ; 99:2, s. 109-111
  • Tidskriftsartikel (refereegranskat)abstract
    • Sn oxide films, made by reactive r.f. magnetron sputtering, were studied in a Li+-conducting electrolyte. Cyclic voltammograms taken at different sweep rates were interpreted in terms of a unique structural parameter related to the fractal dimension of a self-affine surface relief.
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19.
  • Karlsson, Krister, 1961-, et al. (författare)
  • Theoretical investigation of energy shifts at the GaAs/Au interface
  • 1988
  • Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 67:4, s. 339-342
  • Tidskriftsartikel (refereegranskat)abstract
    • We have used an image screening model to calculate the shift of the Ga(3d−1) core-level distribution when a GaAs surface is covered with metal. Using the GaAs bulk dielectric constant we find a shift of 0.1 (0.18) eV with a mean free path of 25 (8) Å. These shifts are comparable to the measured ones,1 indicating that final-state (image) screening represents an important part of core-level shifts in the vicinity of the interface.
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20.
  • KARLSSON, Ulf O, et al. (författare)
  • INTRINSIC SURFACE-STATE ON BE(0001)
  • 1984
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 49:7, s. 711-714
  • Tidskriftsartikel (refereegranskat)
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21.
  • Kudrawiec, R., et al. (författare)
  • The nature of optical transitions in Ga0.64In0.36As1-xNx/GaAs single quantum wells with low nitrogen content (x <= 0.008)
  • 2003
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 127:10-sep, s. 613-618
  • Tidskriftsartikel (refereegranskat)abstract
    • Ga0.64In0.36As1-xNx/GaAs single quantum wells (SQWs) with low nitrogen content have been investigated by both photoluminescence (PL) and photoreflectance (PR) at low and room temperatures. A huge broadening of the PR features has been observed at low temperature and a decrease in this broadening with the temperature increase was detected. This effect and the nature of the optical transitions observed in absorption and emission can be explained using a model which assumes band gap variation due to different nitrogen nearest-neighbour environments (different configurations). In the framework of this model, the large Stokes shift observed for quantum wells (QWs) with smooth interfaces is explained as originating from the potential fluctuations of conduction band edge in the QW layer.
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22.
  • Lehto, Niklas, et al. (författare)
  • Electron states of a stacking fault ribbon in silicon
  • 1994
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 92:12, s. 987-989
  • Tidskriftsartikel (refereegranskat)abstract
    • The electronic structure of a bounded intrinsic stacking fault in silicon is calculated. The method used is an LCAO-scheme (Linear Combinations of Atomic Orbitals) taking ten atomic orbitals of s-, p-, and d-type into account. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. We find occupied states located up to 0.3 eV above the valence band maximum (Eυ). This significantly differs from the result obtained for the ideal infinite fault for which the interface state is located at Eυ+0.1 eV
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23.
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24.
  • Liu, Bingbing, et al. (författare)
  • Electric resistance of single-walled carbon nanotubes under hydrostatic pressure
  • 2001
  • Ingår i: Solid State Communications. - : Elsevier B.V.. - 0038-1098 .- 1879-2766. ; 118:1, s. 31-36
  • Tidskriftsartikel (refereegranskat)abstract
    • The electric resistance of single-walled nanotube mats has been studied systematically under both ambient and high hydrostatic pressures up to 1.5 GPa. Both the temperature dependence of the resistance and the magnetoresistance indicate that electrical transport occurs by variable range hopping, apparently in 2D. We suggest that this unexpected dimensionality arises from a fractal network of tubes and bundles. Under hydrostatic pressure (HP) the resistance still shows 2D variable range hopping and decreases with increasing HP. An irreversible increase in localization length and DOS is induced below 0.5 GPa. The behavior is reversible and due to strong interaction of tubes from 0.5 GPa up to 1.05 GPa. These results indicate that 2D variable range hopping occurs within bundles.
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25.
  • Lozovik, Yu E, et al. (författare)
  • Crystallization and quantum melting of few electron system in a spherical quantum dot : quantum Monte Carlo simulation
  • 2003
  • Ingår i: Solid State Communications. - : Elsevier Science B.V., Amsterdam.. - 0038-1098 .- 1879-2766. ; 125:2, s. 127-131
  • Tidskriftsartikel (refereegranskat)abstract
    • Spherical quantum dots with a few charged Fermi particles (electrons or holes) are studied for different total spins. Simulation by quantum path integral Monte Carlo method is performed. The dependence of the electron correlations in the quantum dot is studied at different mean interelectron separation controlled by number of electrons in the quantum dot and by steepness of electron confinement (the latter parameter can be changed by the gate voltage). The cold melting-quantum transition from Wigner crystal-like state (i.e. from regime of strongly correlated electrons) to a Ferad liquid-like state-driven by the steepness of electron confinement is studied. The pair correlation function and radial function characterizing electron quantum delocalization are analyzed.
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26.
  • Lundberg, Bo, et al. (författare)
  • Basal plane resistivity and phase diagram of HNO3 intercalated graphite in the range 130–320 K and 0–1.6 GPa
  • 1986
  • Ingår i: Solid State Communications. - : Elsevier Science Ltd.. - 0038-1098 .- 1879-2766. ; 58:10, s. 747-751
  • Tidskriftsartikel (refereegranskat)abstract
    • The basal plane resistivity varrho of stages 3–5 HNO3 intercalated graphite has been measured as a function of temperature T and pressure p in the range 130–320 K and 0–1.6 GPa (16 kbar). A contactless method was used. The phase boundary of the 250 K ordering transition at zero pressure was traced up to 320 K through the corresponding anomaly in varrho. The pressure dependence of varrho was strongly stage dependent, such that for stages 3, 4 and 5 the observed pressure coefficients (1/varrho)dvarrho/dp were approximately 0.08, −0.08, and −0.22 GPa−1, respectively, near zero pressure.
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27.
  • Lundin, Anders, et al. (författare)
  • Compressibility, specific heat capacity, and Grüneisen parameter for C60/C70
  • 1992
  • Ingår i: Solid State Communications. - : Elsevier Science Ltd. - 0038-1098 .- 1879-2766. ; 84:9, s. 879-883
  • Tidskriftsartikel (refereegranskat)abstract
    • We have measured the specific heat capacity cp of C60/C70 between 110 and 310 K and its compressibility κ up to 1.1 GPa (11 kbar) at 293 K, a range in t and p which overlaps reported ranges of stability of both the rotationally disordered high T, low p fcc phase and the low T high p orientationally ordered sc phase. No sharp anomaly is observed in cp at the transition. The bulk modulus B near p = 0 was 8.4 GPa, rapidly increasing to about 16 GPa near 1 GPa. For our data, the intermolecular forces could be modeled by either a Lennard-Jones or a Born-Mayer potential, but this was not the case if literature data for compression vs. p were used.
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28.
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29.
  • Magnuson, Martin, 1965-, et al. (författare)
  • Magnetic circular dichroism in X-ray fluorescence of Heuseler alloys at threshold excitation
  • 2001
  • Ingår i: Solid State Communications. - 0038-1098 .- 1879-2766. ; 117:2, s. 79-82
  • Tidskriftsartikel (refereegranskat)abstract
    • The results of fluorescence measurements of magnetic circular dichroism (MCD) in Mn L2,3 X-ray emission and absorption for Heusler alloys NiMnSb and Co2MnSb are presented. Very intense resonance Mn L3 emission is found at the Mn 2p3/2 threshold and attributed to a peculiarity of the threshold excitation in materials with a half-metallic character of the electronic structure. The excitation energy dependence of Mn L2,3 X-ray emission spectra (XES) was measured at beamline ID12B at the European Synchrotron Radiation Facility (ESRF, Grenoble) using 83% circularly polarized X-rays. A very large MCD effect found in XES is attributed to strong exchange splitting of spin-up and spin-down Mn 3d states. The anomalously high ratio of L2 emission intensity to L3 emission intensity is found.
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30.
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31.
  • Marklund, Sune, et al. (författare)
  • Energy level calculations of the reconstructed 90° partial dislocation in silicon
  • 1992
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 82:2, s. 137-140
  • Tidskriftsartikel (refereegranskat)abstract
    • An LCAO scheme taking into account 10 atomic orbitals (s-, p-, and d-type) applied to a supercell containing 256 atoms is used to calculate the bound states of the reconstructed 90° partial dislocation in Si. The results differ significantly from our earlier calculations on the unreconstructed 90° partial using the same method. We find two bands separate from each other in the entire Brillouin zone and the upper band penetrates deep into the indirect band gap which is in contradiction with the general opinion that core reconstruction clears the band gap of dislocation states.
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32.
  • Marklund, Sune, et al. (författare)
  • Influence of the 90° partial dislocation core structure in silicon on energy levels
  • 1994
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 91:4, s. 301-305
  • Tidskriftsartikel (refereegranskat)abstract
    • An LCAO-scheme taking into account 10 atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of the reconstructed 90° partial dislocation in Si. Two different valence force fields producing deviating results are used for modelling the core structure. Geometrical data published by another group is also used. The aim is to explore the influence of geometry on energy levels. We find that the band structure depends sensitively on bond angles. Using data determined by the Tersoff potential we obtain two bands of which the upper one penetrates deeply into the indirect band gap while the geometry minimizing the simple Keating potential leaves the gap completely clear of dislocation states. Thus, from a theoretical point of view, the chief difficulty in calculating the electronic structure of the reconstructed 90° partial is the lack of accurate structural information.
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33.
  • Marklund, Sune (författare)
  • Vacancy concentration in the core of the 90° reconstructed partial dislocation in silicon
  • 1989
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 72:6, s. 609-612
  • Tidskriftsartikel (refereegranskat)abstract
    • The modified Tersoff potential is used to calculate the ratio C/C0 between the probability of vacancy formation at a particular site in the dislocation core and the corresponding quantity in ideal material. This ratio is given by the expression C/C0 = exp (ΔSf/k) exp (-ΔUf/kT) in which ΔSf and ΔUf stand for the differences in formation entropy and energy, respectively. The results show that C/C0 is significantly larger than one only for sites nearest to the dislocation line. It is also shown that the entropy factor is of minor importance.
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34.
  • Onipko, A., et al. (författare)
  • Triple-, double-, and fractionally-spaced Wannier-Stark ladders
  • 2001
  • Ingår i: Solid State Communications. - 0038-1098 .- 1879-2766. ; 118:2, s. 63-67
  • Tidskriftsartikel (refereegranskat)abstract
    • The concept of Wannier-Stark (WS) quantization literally refers to infinite crystals or bulk electron states. In real finite crystals, the bulk and edge or surface states always coexist. Moreover, when the surface states are already considerably localized due to the presence of a constant electric field, the WS ladder (WSL) and hence the WS localization may not yet come into play, at least, in the canonical form of WS quantization Ej = const±je, j = 0, 1, 2, ... (Ej is the one-electron energy, and the parameter e is associated with the electric field strength). We show that at certain voltages Vm, m = 3, 4, ..., which are lower than V8 needed for the WS band opening (the sub-WS regime), the mid-spectrum levels can form triple-, double-, and fractional-spaced WSLs, where El = ±l[1+2/(m-2)]em. It is also found that in the WS regime, the quantization of surface localized states (sls) smoothly changes from the Airy type (at the spectrum edges) to the WS type with a pronounced energy interval in between, where the level spacing doubles that of canonical WSL. Possible experimental manifestations of predicted effects are also outlined.
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35.
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36.
  • Paul, Jan, et al. (författare)
  • Surface state energy shifts by molecular adsorption : CO ON Cu(111)
  • 1981
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 40:4, s. 395-397
  • Tidskriftsartikel (refereegranskat)abstract
    • Molecular adsorption induced energy shifts of a surface state is observed for the Cu(111)/CO system. Angle resolved photoelectron energy spectra show that a zone center surface state shifts to higher energy relative to the Cu bulk bands. The effects is discussed in terms of charge transfer, molecular interaction range and absorption site.
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37.
  • Rahbi, R., et al. (författare)
  • Neutralisation of group vi donors by hydrogen in gallium arsenide
  • 1994
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 91:3, s. 187-190
  • Tidskriftsartikel (refereegranskat)abstract
    • The infrared absorption of GaAs:S and GaAs:Te samples partially neutralised by hydrogen show two local modes with very similar frequencies. These modes are comparable to the ones already reported in GaAs:Se. These results are interpreted by assuming that neutralisation takes place by the formation of a bond between a Ga atom first neighbour of the chalcogen and a H atom in an antibonding location. This assumption is strengthened by ab initio calculations that provide also frequencies of the right order of magnitude.
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38.
  • Rao, K.V., et al. (författare)
  • Hall effect in amorphous magnetic materials - METGLAS 2826 and 2826B
  • 1976
  • Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 19:3, s. 193-195
  • Tidskriftsartikel (refereegranskat)abstract
    • Hall effect measurements on the ferromagnetic amorphous materials, Metglas 2826 and 2826B, indicate that they are rather similar to crystalline soft magnetic materials. The extra-ordinary Hall coefficient Ra is found to be 1.4 x 104 ρ2 (m3/As), where, ρ, is the electrical resistivity, and is in reasonable agreement with the predictions of theory. On the other hand, though unexpected, the ordinary Hall coefficient in all the amorphous alloys we have studied turns out to be of the order of 7 x 10-10 (m3/As).
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39.
  • ROGELET, T, et al. (författare)
  • ELECTRONIC-STRUCTURE OF NIO(1 0 0) WITH ADSORBED NA
  • 1993
  • Ingår i: Solid State Communications. - 0038-1098 .- 1879-2766. ; 85:7, s. 657-660
  • Tidskriftsartikel (refereegranskat)abstract
    • Adsorption of Na on single crystals of NiO(1 0 0) at room temperature has been investigated via angle-resolved photoemission spectroscopy and measurements of work-function changes. The drastic changes in the valence band spectra upon Na deposition are assigned to a chemical reaction between Na and O where metallic Ni is left as by-product. At short deposition times, Na mainly acts as an inert electron donor, and at these coverages no dispersion is observed in the angle-resolved photoemission spectra which indicates that the electronic states are localized. The measurements were performed both for a polished and an in-situ cleaved NiO crystal.
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40.
  • Sjöstedt, Elisabeth, et al. (författare)
  • An alternative way of linearizing the augmented-plane-wave method
  • 2000
  • Ingår i: Solid State Communications. - 0038-1098 .- 1879-2766. ; 114:1, s. 15-20
  • Tidskriftsartikel (refereegranskat)abstract
    • A new basis set for a full potential treatment of crystal electronic structures is presented and compared to that of the well-known linearized augmented plane-wave (LAPW) method. The basis set consists of energy-independent augmented plane-wave functions combined with local orbitals. Each basis function is continuous over the whole unit cell but it may have a discontinuous slope at the muffin-tin boundaries, i.e. at the surfaces of atomic centered, non-overlapping spheres. This alternative way to linearize the augmented plane-wave method is shown to reproduce the accurate results of the LAPW method, but using a smaller basis set size. The reduction in number of basis functions is most significant for open structures.
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41.
  • Strömme, Maria, et al. (författare)
  • Voltammetry on fractals
  • 1995
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 96:3, s. 151-154
  • Tidskriftsartikel (refereegranskat)abstract
    • New methods are introduced for determining the fractal dimension df of a surface from cyclic voltammograms. The separation between current peaks is strongly dependent on df, provided that the current is diffusion limited. We also derive a new Randles-Sevcik equation-relating the diffusion coefficient to the peak current of a voltammogram—that holds for electrodes with fractal surfaces. This equation gives a simple additional method of determining df from voltammetry using recordings of the peak current at different scan rates.
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42.
  • Sundqvist, Bertil (författare)
  • Electrical resistance of YBa2Cu3O7-delta in the range 300-500 K and 0-1.5 GPa
  • 1988
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 66:6, s. 623-627
  • Tidskriftsartikel (refereegranskat)abstract
    • The electrical resistance R of single-phase, sintered YBa2Cu3O7−δ has been studied as a function of pressure p and temperature T in the range 300 to 500 K and 0 to 1.5 GPa (15 kbar). R is linear in T and has an initial pressure coefficient of about −13 %/GPa. The pressure dependence of Tc has also been measured up to 1 GPa, with the result dTc/dp = 0.45 K/GPa. The results are discussed in terms of electron-electron scattering, electron-phonom scattering, and the resonating valence bond theory, but none of these can fully explain the results.
  •  
43.
  • Sundqvist, Bertil, et al. (författare)
  • Phase diagram, structure, and disorder in C60 below 300 K and 1 GPa
  • 1995
  • Ingår i: Solid State Communications. - : Elsevier Science Ltd. - 0038-1098 .- 1879-2766. ; 93:2, s. 109-112
  • Tidskriftsartikel (refereegranskat)abstract
    • Earlier structural studies have shown that the pentagon-to-hexagon orientation ratio in the orientationally ordered simple cubic phase of C60 decreases under pressure. From anomalies observed in the compressibility and thermal conductivity of C60 under pressure we have deduced a pressure-temperature phase diagram for this substance in the range below 300 K and 1 GPa (10 kbar). We conclude that C60 forms a new, completely “hexagon” ordered structural phase above about 0.6 GPa at 150 K (1.2 GPa at 300 K), and that the glass transition shifts upwards in T under pressure by 54 K GPa−1. However, above 0.1 GPa, pentagon-to-hexagon orientation relaxation seems to occur on heating at an almost pressure independent temperature near 100 K.
  •  
44.
  • Sundqvist, Bertil, et al. (författare)
  • Pressure dependence of the thermal conductivity of aluminium
  • 1977
  • Ingår i: Solid State Communications. - : Elsevier B.V.. - 0038-1098 .- 1879-2766. ; 23:10, s. 773-775
  • Tidskriftsartikel (refereegranskat)abstract
    • The thermal diffusivity, a, of aluminium has been measured at pressures up to 2.5 GPa at room temperature, and from these results the pressure dependence of the thermal conductivity, λ, has been calculated. Both quantities increase with pressure. The increase in a amounts to 4.6% to 1 GPa and 10.4% to 2.5 GPa. The initial pressure coefficient of the electronic thermal conductivity λe is found to be [λe]-1λe/P = 3.7 × 10-2GPa-1, which agrees very well with a recent theoretical calculation.
  •  
45.
  • Sundqvist, Bertil, et al. (författare)
  • Resistivity of high-Tc superconductors: Linear in T at constant p, non-linear at constant V
  • 1990
  • Ingår i: Solid State Communications. - : Elsevier Science Ltd. - 0038-1098 .- 1879-2766. ; 76:8, s. 1019-1022
  • Tidskriftsartikel (refereegranskat)abstract
    • The observed constant-pressure resistivity varrhop of most high-Tc superconductors is linear in temperature T over large ranges. We show that this is not true for the constant-volume resistivity varrhov; for 1–2–3 YBCO the correction from varrhop to varrhov is -32% at 500 K relative to the low-T value. Since theory predicts varrhov rather than varrhop, the observed linearity of varrho probably cannot be used as a tool to choose between theories for high-Tc superconductivity.
  •  
46.
  • Sundqvist, Bertil (författare)
  • Thermal conductivity and Lorenz number of nickel under pressure
  • 1981
  • Ingår i: Solid State Communications. - : Elsevier B.V.. - 0038-1098 .- 1879-2766. ; 37:3, s. 289-291
  • Tidskriftsartikel (refereegranskat)abstract
    • The thermal and electrical conductivities of nickel have been studied under hydrostatic pressures up to 1.6 GPa at room temperature. Allowing for the pressure dependence of the lattice thermal conductivity, the electronic Lorentz function increases with pressure with an approximate pressure coefficient of 2 × 10-2 GPa-1. This is in strong disagreement with the standard Bloch-Grüneisen theory which predicts a volume independent Lorentz number
  •  
47.
  • Adell, Johan, 1980, et al. (författare)
  • Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B
  • 2011
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 151:11, s. 850-854
  • Tidskriftsartikel (refereegranskat)abstract
    • Valence band photoemission with photon energies around the Mn2p excitation threshold has been used to study the development of nanowires catalyzed by MnAs particles. A gradual change in the spectra with increasing nanowire length is observed, such that the resonant photoemission eventually dominates over the Auger decay channel. The change is ascribed to dilution of Mn, showing that Mn is transferred from the MnAs particles into the nanowires. (C) 2011 Elsevier Ltd. All rights reserved.
  •  
48.
  • Agui, A, et al. (författare)
  • Resonant OK alpha emission spectra of CuGe0(3) single-crystal
  • 2001
  • Ingår i: SOLID STATE COMMUNICATIONS. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0038-1098. ; 118:12, s. 619-622
  • Tidskriftsartikel (refereegranskat)abstract
    • The electronic structure of CuGeO3 has been studied using soft X-ray absorption and emission spectroscopy. The unoccupied and occupied valence states are reflected by O 1s absorption and OK alpha emission spectra, respectively. An absorption pre-peak appe
  •  
49.
  • Ahuja, R, et al. (författare)
  • Electronic and optical properties of InP
  • 1997
  • Ingår i: SOLID STATE COMMUNICATIONS. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0038-1098. ; 104:5, s. 249-252
  • Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
    • We have calculated the band structure and dielectric function of InP by means of an accurate first-principles method using the full potential linear muffin-tin orbital method (FPLMTO). Our calculated dielectric functions is compared with the recent data o
  •  
50.
  • Araujo, Rafael B., et al. (författare)
  • Lithium transport investigation in LixFeSiO4 : A promising cathode material
  • 2013
  • Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 173, s. 9-13
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper we investigate lithium mobility in both Li 2FeSiO4 and its half-lithiated state LiFeSiO4 considering an orthorhombic crystal structure. We find that the calculated activation energy of Li+ ions hopping between adjacent equilibrium sites predicts two least hindered diffusion pathways in both materials. One of them is along the [100] direction characterizing an ionic diffusion in a straight line and the other follows a zig-zag way between the Fe-Si-O layers. We also show that diffusion of Li+ ions in the half-lithiated structure follows the same behavior as in the lithiated structure. As a whole, the activation energies for the investigated compounds present a greater value compared with the activation energies in currently used materials such as LiFePO4. The results were calculated in the framework of density functional theory in conjunction with the climbing image nudged elastic band method. The Hubbard term was added to the Kohn-Sham Hamiltonian to overcome the delocalization problem of d electrons. Furthermore, the diffusion coefficients were calculated for both structures considering temperatures ranging from 300 to 700 K.
  •  
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