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Sökning: L773:0149 645X OR L773:9781424417810

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1.
  • Mashad Nemati, Hossein, 1980, et al. (författare)
  • Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures
  • 2008
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781424417810 ; , s. 1505-1508
  • Konferensbidrag (refereegranskat)abstract
    • In this paper, switched mode power amplifiers with different classes of operation and device technologies are characterized versus input power and output supply voltage. The results are used to identify optimal control schemes for use in polar transmitter architectures. Then the effects of different control schemes on the requirements for the power amplifier, and the envelope amplifier, as the main building blocks of this architecture, are investigated.
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2.
  • Thorsell, Mattias, 1982, et al. (författare)
  • Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
  • 2008
  • Ingår i: International Microwave Symposium Digest, 2008, Atlanta. - 0149-645X. - 9781424417810 ; , s. 463-466
  • Konferensbidrag (refereegranskat)abstract
    • The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K. The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the highfrequency noise performance of the AlGaN/GaN-HEMT.The intrinsic noise sources are extracted and a noise model is derived and verified for a MMIC amplifier.
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3.
  • Norling, Martin, 1981, et al. (författare)
  • A 2 GHz oscillator using a monolithically integrated AlN TFBAR
  • 2008
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781424417803 ; 1:1, s. 843-846
  • Konferensbidrag (refereegranskat)abstract
    • A 2 GHz oscillator based on a solidly mounted AlN thin-film bulk acoustic resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon multi-chip module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a high-resistivity silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset.
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4.
  • Abbasi, Morteza, 1982, et al. (författare)
  • A Broadband 60-to-120 GHz single-chip MMIC multiplier chain
  • 2009
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; , s. 441-444
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents a single-chip 60 GHz to 120 GHz frequency multiplier chain based on 0.1 ?m GaAs mHEMT. The MMIC can deliver 3 to 5 dBm of output power from 110 GHz to 130 GHz with 2 dBm input power and consumes only 65 mW of DC power. The signal at the fundamental frequency is suppressed more than 20 dB over the band of interest. The impedance matching networks are realized using coupled transmission lines.
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5.
  • Alfonso, E., et al. (författare)
  • Design of microwave circuits in ridge gap waveguide technology
  • 2010
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781424460564 ; , s. 1544 - 1547
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents recent advances is a new waveguiding technology referred to as ridge gap waveguides. The main advantages of the ridge gap waveguides compared to hollow waveguides are that they are planar and much cheaper to manufacture, in particular at high frequencies such as for millimeter and submillimeter waves. In these waveguides there are no mechanical joints across which electric currents must float. The gap waveguides have lower losses than microstrip lines, and they are completely shielded by metal so no additional packaging is needed, in contrast to the severe packaging problems associated with microstrip circuits. The gap waveguides are realized in a narrow gap between two parallel metal plates by using a texture on one of the surfaces. The waves follow metal ridges in the textured surface. All wave propagation in other directions is prohibited (in cutoff) by realizing a high impedance (ideally a perfect magnetic conductor) through the textured surface at both sides of all ridges. Thereby, cavity resonances do not appear within the band of operation. The paper studies the characteristic impedance of the line and presents simulations and measurements of circuits designed using this technology.
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6.
  • Alleaume, Pierre Franck, et al. (författare)
  • A highly integrated heterogeneous micro- and mm-wave platform
  • 2010
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781424477326 ; , s. 461-464
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • A highly integrated platform for micro- and mmwave frequency applications is introduced. The platform utilizes heterogeneous process modules with integrated passive and tunable devices together with silicon and GaAs MMIC technology to achieve outstanding flexibility. The different process modules are accounted for and their feasibility is proven through a number of application demonstrators from 23GHz telecom backhauling and 77GHz automotive radar indicating excellent performance. © 2010 IEEE.
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7.
  • Anderberg, Martin, 1992, et al. (författare)
  • A 183-GHz Schottky diode receiver with 4 dB noise figure
  • 2019
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - : IEEE. - 0149-645X. ; 2019-June, s. 172-175
  • Konferensbidrag (refereegranskat)abstract
    • Atmospheric science based on space-borne millimeter wave measurements require reliable and state-of-the art receivers. In particular, the water vapor line at 183.3 GHz motivates the development of sensitive mixers at this frequency. Traditional assembly techniques employed in the production of Schottky diode receivers involve flip-chip mounting and soldering of discrete dies, which prohibit the implementation of reliable and repeatable production processes. In this work, we present a subharmonic 183 GHz mixer implementing a repeatable assembly method using beamlead Schottky diodes. The mixer was integrated with a InP HEMT MMIC low noise intermediate frequency amplifier resulting in a record-low receiver noise temperature of 450 K at 1 mW of local oscillator power measured at room-temperature. The measured Allan time was 10 s and the third order local oscillator spurious power was less than -60 dBm. The proposed assembly method is of particular importance for space-borne missions but also applicable to a wide range of terahertz applications.
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8.
  • Andersson, Christer, 1982, et al. (författare)
  • Decade bandwidth high efficiency GaN HEMT power amplifier designed with resistive harmonic loading
  • 2012
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
  • Konferensbidrag (refereegranskat)abstract
    • The use of resistive loading at higher harmonics in wideband power amplifier design is proposed. Although the theoretical efficiency of such operation is lower than other classes the significantly simplified load network design potentially allows for multi-octave realizations. A decade bandwidth (0.4-4.1 GHz) GaN HEMT power amplifier was thereby designed, delivering more than 40 dBm output power with 10-15 dB gain and 40-62% drain efficiency. Linearized modulated signal amplification was then successfully demonstrated at multiple frequencies (0.9 to 3.5 GHz), using various downlink signals (LTE, WCDMA, WiMAX), with resulting ACLR lower than 46 dBc.
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9.
  • ANDERSSON, MICHAEL, 1988, et al. (författare)
  • Noise Figure Characterization of a Subharmonic Graphene FET Mixer
  • 2012
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
  • Konferensbidrag (refereegranskat)abstract
    • We report on the first room temperature noise figure measurement of a graphene FET subharmonic resistive mixer in the interval fRF = 2-5 GHz. Due to an 8 nm thin Al2O3 gate dielectric it can operate with a conversion loss in the range 20-22 dB at only 0 dBm of local oscillator power. The measurement yields a noise figure close to the conversion loss, thus determining the noise to be thermal in origin, which is promising for cryogenic applications. The general route to lower noise figure is an improvement of the conversion loss.
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10.
  • Angelov, Iltcho, 1943, et al. (författare)
  • A balanced millimeter wave doubler based on pseudomorphic HEMTs
  • 1992
  • Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 1, s. 353-356
  • Konferensbidrag (refereegranskat)abstract
    • A balanced HEMT (high electron mobility transistor) doubler for operation at millimeter waves has been analyzed, fabricated, and characterized. Particular attention has been paid to the influence of the output circuit on the performance of the doubler. The doubler was analyzed with a harmonic balance method and an output power of 4 dBm at 42 GHz was obtained experimentally. The conversion gain is approximately -1 dB at 40 GHz at an input power of 5 dBm. Bias and frequency response were very close to the predicted ones.
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11.
  • Angelov, Iltcho, 1943, et al. (författare)
  • A new empirical nonlinear model for HEMT-devices
  • 1992
  • Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 0780306112 ; 3, s. 1583-1586
  • Konferensbidrag (refereegranskat)abstract
    • A novel signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length ∂-doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.
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12.
  • Angelov, Iltcho, 1943, et al. (författare)
  • F-band resistive mixer based on heterostructure field effect transistor technology
  • 1993
  • Ingår i: Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems. - 0149-645X. - 0780312090 ; 2, s. 787-790
  • Konferensbidrag (refereegranskat)abstract
    • A fundamentally pumped millimeter wave resistive mixer based on an HFET technology working at F-band (90-140 GHz) is described for the first time. Nonlinear simulations have been performed for this mixer based on an specially designed double δ-doped pseudomorphic HFET device developed for this application. A minimum conversion loss between 12 to 13 dB was measured with the RF fixed at different frequencies between 108 to 114 GHz at an RF power of -13 dBm. Both theoretical and experimental results are presented in this paper.
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13.
  • Angelov, Iltcho, 1943, et al. (författare)
  • On the large-signal modeling of High Power AlGaN/GaN HEMTs
  • 2012
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
  • Konferensbidrag (refereegranskat)abstract
    • In this paper are given some recent results on modeling of High Power GaN HEMT devices. The GaN HEMT is very promising for high power application, but we push device to the limits, so many issues are becoming critical. For example, access resistances Rs, Rd in high power GAN HEMT are bias and temperature dependent-their extraction from cold FET measurements can lead to over optimistic prediction for output power. Thermal management, self-heating modeling are another very important issue-they influence reliability, power and PAE. Models without dynamic self-heating are not practical for GaN. The models without breakdown can easily predict world records for PAE, output power/mm etc. Some examples are given using vectorial Large Signal Measurements (LSNA/NVNA) to provide useful, global info about device behavior, influence of traps, knee voltage walkout etc.
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14.
  • Avolio, G., et al. (författare)
  • A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation
  • 2013
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467361767 ; , s. Art. no. 6697394-
  • Konferensbidrag (refereegranskat)abstract
    • In this work we describe a novel technique for the extraction of nonlinear model for microwave transistors from nonlinear measurements obtained by simultaneously driving the device under test with low- and high-frequency excitations. Specifically, the large-signal operating point of the device is set by large-signal low-frequency excitations. On top of these a tickle tone at high-frequency is applied. In this way, one can separate the contributions of the IDS current source and the charge sources by a single measurement. The nonlinear model, based on equations available in commercial CAD tools, is extracted for a 0.15 μm GaAs pHEMT. Good agreement is obtained between model predictions and experimental data.
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15.
  • Avolio, G., et al. (författare)
  • Waveforms-based large-signal identification of transistor models
  • 2012
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
  • Konferensbidrag (refereegranskat)abstract
    • Measurements of low-and high-frequency vector-calibrated large-signal waveforms are exploited in this work to identify the parameters of a FET nonlinear model. The I DS nonlinear current source and the nonlinear charge sources' parameters are respectively determined from a small set of low-(2 MHz) and high-frequency (8 GHz) load-pull measurements by using a least square numerical optimization. Under low-frequency operation the contribution of the charge sources and any other reactive element can be neglected. In this way the identification of the IDS parameters is more accurate while remarkably speeding up the optimization routine as well. The proposed procedure is quite general and can be applied to different types of active devices. As case study, a 0.25-μm GaAs pHEMT is considered and the extracted model is validated under conditions different than the ones exploited within the identification step. A very good agreement between model predictions and experimental data is achieved.
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16.
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17.
  • Bao, Husileng, 1991, et al. (författare)
  • Automatic Distributed MIMO Testbed for beyond 5G Communication Experiments
  • 2021
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2021-June, s. 697-700
  • Konferensbidrag (refereegranskat)abstract
    • This paper demonstrates an automated testbed suitable for beyond-5G distributed MIMO experiments, where bandwidth, number of transmitters and precoding methods are flexible and configured through a central unit. This is based on an all-digital radio-over-fiber approach to communication through 12 fully coherent, low-complexity remote radio transmitters. An automated robot receiver is implemented to facilitate efficient communication data collection in realistic environments. Using the proposed system, co-located and distributed MIMO communication antenna configurations are compared in a real in-door environment. The results show that distributed MIMO provides more significantly more uniform power distribution and better overall MIMO capacity compared to co-located MIMO.
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18.
  • Bao, Mingquan, et al. (författare)
  • A 135–183GHz Frequency Sixtupler in 250nm InP HBT
  • 2020
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2020, s. 480-483
  • Konferensbidrag (refereegranskat)abstract
    • A technique to design a broadband two-stage frequency tripler is proposed. The 1 st and the 2 nd harmonics obtained from the first stage are mixed in the second stage, getting the 3 rd harmonic. Between the two stages, there is a two-pole filter which lets the amplitude of the 1 st harmonic increase and the amplitude of the 2 nd harmonic decrease when the frequency increases. Consequently, a large 1 st harmonic is always mixed with a small 2 nd harmonic, and vice versa, which equalizes the amplitude of the mixing product, i.e., the 3 rd harmonic, over a large bandwidth. Together with a frequency doubler and a buffer amplifier, this frequency tripler is used in a frequency sixtupler. A proof-of-concept circuit is designed and implemented in 250 nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. For an input power of 6.3 dBm, the sixtupler has an output power between 0 dBm to 4.6 dBm in the output frequency range from 135 GHz to 183 GHz. It exhibits up to 13 dBc rejection ratio of the undesired 4 th , 5 th , and 7th harmonics. The sixtupler consumes a dc power of 100 mW, and achieves a peak power efficiency of 2.5%.
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19.
  • Bao, M., et al. (författare)
  • A 31~61 GHz linear transconductance up-conversion mixer with 15 GHz IF-bandwidth
  • 2013
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X.
  • Konferensbidrag (refereegranskat)abstract
    • A novel 31-61 GHz up-conversion transconductance mixer is proposed, designed and manufactured in a 0.25 μm InP DHBT technology, which consists of a main and an auxiliary mixer. At large input power, the conversion gain compression of the main mixer is compensated by the gain expansion of the auxiliary mixer; consequently, the linearity of the combined two mixers is improved. The measured output referred 1-dB compression point, OP1dB, is -2.2 dBm to -0.57 dBm in the frequency range, which to the authors' knowledge, is the best obtained among the up-conversion mixers published so far. Moreover, the mixer also demonstrates a broad IF bandwidth of 0~15 GHz, supporting up-conversion of high datarate baseband signals. © 2013 IEEE.
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20.
  • Baptista, Emanuel, 1993, et al. (författare)
  • Analysis of thermal coupling effects in integrated MIMO transmitters
  • 2017
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 75-78
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents a detailed analysis of thermal coupling and self-heating effects in highly integrated wireless transmitters. A MIMO transmitter prototype consisting of two closely integrated power amplifiers was built and modelled through microwave and thermal characterizations. The thermal behavior was extracted using FEM software and modelled with an equivalent RC network. The PA model was obtained experimentally using a pulsed setup. An RF-thermal simulator was developed and used with the models to predict joint thermal and electrical behavior. Measurements with modulated communication signals were done and compared with the simulator to demonstrate its feasibility for analysis of thermal effects in highly integrated transmitter applications.
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21.
  • Bronders, Piet, et al. (författare)
  • Measurement & Extraction of the Low-Frequency Dynamics of an Envelope Tracking Amplifier using Multisine Excitations
  • 2018
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2018-June, s. 1039-1042
  • Konferensbidrag (refereegranskat)abstract
    • Both efficiency and linearity of an Envelope Tracking Power Amplifier depend on the tight synchronization between a Low- and High-Frequency path. The presence of reactive elements in this Low-Frequency path, as well as an inevitable delay difference between both paths, results in a dynamic mismatch that can seriously degrade the overall performance of the device. This work introduces a method that is able to extract these Low-Frequency dynamics without requiring access to any internal nodes of the device. The proposed extraction procedure makes use of the combination of a linear parameter-varying framework and a specific signal excitation strategy which uses a multisine excitation to mimic the operational conditions of the amplifier. A trustworthy model for the Low-Frequency dynamics is an important component necessary for building an adequate pre-distortion tool that is able to eliminate a bad dynamic match.
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22.
  • Bryllert, Tomas, 1974, et al. (författare)
  • A broadband heterostructure barrier varactor tripler source
  • 2010
  • Ingår i: 2010 IEEE MTT-S International Microwave Symposium (MTT). - 0149-645X. - 9781424460571 ; , s. 344-347
  • Konferensbidrag (refereegranskat)abstract
    • We present the first demonstration of a broadband Heterostructure Barrier Varactor tripler, designed to cover a major part of the WR-8 waveguide band. The source comprises a waveguide housing, a six-barrier InP-HBV diode flip-chip mounted on an AlN microstrip filter circuit. The conversion loss 3-dB bandwidth was measured to 17 % at a center frequency of 112 GHz. The maximum output power was more than 15 mW for an input power of 300 mW. There are no mechanical tuners or DC-bias, which simplifies assembly and allows for ultra-compact design.
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23.
  • Cabello Sánchez, Juan, 1992, et al. (författare)
  • Multiline TRL Calibration Standards for S-parameter Measurement of Planar Goubau Lines from 0.75 THz to 1.1 THz
  • 2018
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2018-June, s. 879-882
  • Konferensbidrag (refereegranskat)abstract
    • We present a multiline Thru-Reflect-Line (TRL) calibration standard for Planar Goubau Line (PGL) which allows setting the calibration plane along the PGL and thus removing the effect of the embedding structure. This opens the possibility of characterizing PGL-circuits. The presented structures were used for calibrating S-parameters measurements between 0.75 THz and 1.1 THz to characterize a 1 mm long and 10 µm wide PGL. The line shows negligible dispersion with an effective relative permittivity of 2.0 and an attenuation constant lower than 0.35 Np/mm (0.65 dB/λ).
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24.
  • Cha, Eunjung, 1985, et al. (författare)
  • A 300-mu W Cryogenic HEMT LNA for Quantum Computing
  • 2020
  • Ingår i: PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS). - 0149-645X .- 2576-7216. - 9781728168159 ; , s. 1299-1302
  • Konferensbidrag (refereegranskat)abstract
    • This paper reports on ultra-low power 4-8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 mu W. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs.
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25.
  • Cha, Eunjung, 1985, et al. (författare)
  • Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs
  • 2017
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 168-171
  • Konferensbidrag (refereegranskat)abstract
    • We have investigated the cryogenic stability of two-finger InP HEMTs aimed for Ka-band ultra-low noise amplifiers (LNAs). Unlike two-finger transistors with a large gate-width above 2 χ 50 μm, the transistors with a small gate-width exhibit unstable cryogenic behavior. The instability is suppressed by adding a source air-bridge. The stabilizing effect of the air-bridge is demonstrated both on device and circuit level. A three-stage 2440 GHz monolithic microwave integrated circuit (MMIC) LNA using a stabilized 100-nm HEMT technology is presented. The amplifier achieves a record noise temperature of 7 K at 25.6 GHz with an average noise of 10.6 K across the whole band at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB exhibiting very stable and repeatable operation. To our knowledge, this amplifier presents the lowest noise temperature reported so far for InP cryogenic LNAs covering the Ka-band.
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26.
  • Chehrenegar, Pirooz, 1964, et al. (författare)
  • Highly linear 1-3 GHz GaN HEMT low-noise amplifier
  • 2012
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
  • Konferensbidrag (refereegranskat)abstract
    • A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The amplifier can be operated at three frequency bands of 1, 2 and 3 GHz. The maximum measured gain is 31 dB at 1GHz and the output referred third-order intercept point (OIP3) is constant for all three frequency bands and equal to 41±1 dBm at a power consumption of L.2 W. A minimum noise figure (NF) of 0.5 dB is measured for the amplifier at the same bias point demonstrating the simultaneous linearity and low noise performance. The presented performance together with the reasonably low power consumption is outstanding in comparison with recently published amplifiers in GaN technology and available commercial GaAs LNAs.
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27.
  • Dahlbäck, Robin, 1985, et al. (författare)
  • Compact 340 GHz homodyne transceiver modules for FMWC imaging radar arrays.
  • 2016
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2016-August
  • Konferensbidrag (refereegranskat)abstract
    • We present a solution where one single LO chain is used to feed a homodyne FMCW radar transceiver. An InGaAs pHEMT active frequency multiplier MMIC (x8) and a Schottky diode frequency doubler make up the LO chain. The novel Schottky diode based transceiver operates both as a frequency multiplier (x2) and as a sub-harmonic mixer. The modules operate at a center frequency of 340 GHz with a 30 GHz modulation bandwidth. An output power of 0 dBm, an IF noise level of -168 dBm/Hz and a receiver conversion loss of 18 dB is achieved in the band. The form factor of the modules is adapted to build one- or two- dimensional FMCW radar arrays. State of the art system performance is achieved while system complexity, size and cost is significantly reduced.
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28.
  • Deleniv, Anatoli, 1969 (författare)
  • Analysis of trcuncated 2D periodic structures
  • 2005
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; , s. 1071-1074
  • Tidskriftsartikel (refereegranskat)abstract
    • A multiport admittance/impedance matrix for the truncated 2D periodic structure is derived via expansion of node voltages and currents in terms of Floquet`s waves. It is shown that for uniaxial propagation, the structure comprised of a finite number of columns/rows is identical to multicoupled lines with properly defined parameters. The 4x4 unit cell array fed at different sides is analyzed using the developed formulation. The results are then verified with a rigorous Sonnet simulation, thereby confirming the validity of the presented approach
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29.
  • Deleniv, Anatoli, 1969, et al. (författare)
  • Experimental characterization of the 3rd order nonlinearities in thin film parallel-plate ferroelectric varactors
  • 2007
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 1424406889 ; 2, s. 683-686
  • Konferensbidrag (refereegranskat)abstract
    • The 3rd order nonlinearities in parallel-plate ferroelectric varactors based on thin Ba0.25Sr0.75TiO3 epitaxial films are characterized in wide temperature range. Both, the generated 3rd order harmonic and 3rd order intermodulation products are measured experimentally. The 3rd harmonic IP3 at room temperature is measured to be 35dBm and is favorable as compared to semiconductor competitors. The good agreement between harmonic balance simulation and measured data indicate that the measured low frequency C-V is adequate for accurate design of nonlinear components.
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30.
  • Deleniv, Anatoli, 1969, et al. (författare)
  • LTCC compatible ferroelectric phase shifters
  • 2005
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 1, s. 599-602
  • Tidskriftsartikel (refereegranskat)abstract
    • Two phase shifters with novel topologies are presented. The phase shifters are based on LTCC compatible ferroelectric films with er=200, and tand=0.04 at 10 GHz. A Ku-band phase shifter is designed to provide DC bias independent matching in the wide frequency range. It has microstrip design where ferroelectric film is used as a substrate and requires relatively low DC bias voltages. The phase shifter showed -15dB matching in 50% bandwidth and 15deg/dB figure of merit. In X-band phase shifter the ferroelectric film is deposited on the low permittivity substrate. Using such two layered substrate a loaded line phase shifter based on coplanar-plate varactors is realized. The varactors are included in the circuit ground and are connected with the microstrip using vias. This designed allows reduction of overall loss due to more efficient use of ferroelectric. The figure of merit of this phase shifter is 20deg/dB at 10 GHz
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31.
  • Deleniv, Anatoli, 1969, et al. (författare)
  • Resonance technique for accurate on-wafer characterization of ferroelectric varactors
  • 2007
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 1424406889 ; 3, s. 2063-2066
  • Konferensbidrag (refereegranskat)abstract
    • A resonance technique for on-wafer characterization of ferroelectric varactors at microwave frequencies is proposed and experimentally verified. The approach is targeted on accurate assessment of the varactors losses if traditional approaches using planar transmission lines can not be used. A number of varactors based on 0.55um thick BSTO film are measured using the proposed approach and results are compared to those obtained with the broadband reflection type measurement. It is demonstrated that the resonance technique is more accurate and reliable.
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32.
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33.
  • Eriksson, Klas, 1983, et al. (författare)
  • InP DHBT wideband amplifiers with up to 235 GHz bandwidth
  • 2014
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781479938698 ; , s. Art. no. 6848436-
  • Konferensbidrag (refereegranskat)abstract
    • Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction bipolar transistor technology. The amplifiers are designed using cascode cells, in a distributed amplifier topology, with simple on-chip resistive bias circuitry. A single stage design achieves 7.5 dB gain and 192 GHz bandwidth and a 2-cascaded distributed amplifier achieves gain in excess of 16 dB and with bandwidth exceeding 235 GHz, thus being the widest band amplifiers reported to date.
  •  
34.
  • Fager, Christian, 1974, et al. (författare)
  • Improvement of Oscilloscope Based RF Measurements by Statistical Averaging Techniques
  • 2006
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; , s. 1460-1463
  • Konferensbidrag (refereegranskat)abstract
    • This paper demonstrates a method for accurate characterization of modulated microwave signals using a digital storage oscilloscope (DSO). Repeated measurements of the modulated signal are used with statistical averaging techniques to significantly improve the dynamic range. The performance of the method is evaluated by residual EVM and RF spectrum measurements. AM/AM measurements using two DSO channels are used to demonstrate the ability to perform synchronous input/output PA characterization.
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35.
  • Fager, Christian, 1974, et al. (författare)
  • Prediction of smart antenna transmitter characteristics using a new behavioral modeling approach
  • 2014
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X.
  • Konferensbidrag (refereegranskat)abstract
    • A new technique for analysis of nonlinear effects in smart antenna array transmitter systems is presented. The analysis is founded on a new type of dual-input circuit behavioral model which allows nonlinear effects caused by antenna mutual-coupling and mismatch to be predicted under realistic wideband signal excitations. The model formulation enables direct interface with multi-port antenna S-parameters and detailed prediction of radiated field characteristics. The method is validated by over-the-air WCDMA measurements on a dual-antenna 2.14 GHz MIMO transmitter. The results demonstrate that antenna mutual coupling may lead to significant nonlinear distortion that cannot be compensated for by conventional linearization techniques.
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36.
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37.
  • Frank, Markus, 1970, et al. (författare)
  • Lumped element balun with inherent complex impedance transformation
  • 2017
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 1285-1288
  • Konferensbidrag (refereegranskat)abstract
    • A novel lumped design approach for complex impedance transforming baluns is presented in this paper. It is shown that a relaxation of symmetry in the T-networks of the out-of-phase-compensated-power-splitter enables complex impedance transformation. Design equations are analytically derived for a total of 4 component values, of which 2 values depend upon the 2 other, which are free variables. The two free component values are used independently for adjustment of input reflection loss, further keeping the balance parameter maximally flat and independent of the load impedance. For Q-values of source and load, not being excessively high, the balun can be realized with only 8 components. A demonstrator is fabricated, transforming 26.9 + j11.1 Ω to 73.8 + j38.6 Ω. An amplitude balance of ±0.7 dB and phase balance better than ±5° is achieved over a 20 % bandwidth. The return loss is higher than 20 dB.
  •  
38.
  • Fritzin, Jonas, et al. (författare)
  • Linearity, intermodulation distortion and ACLR in outphasing amplifiers
  • 2013
  • Ingår i: 2013 IEEE MTT-S International Microwave Symposium Digest. - : IEEE conference proceedings. - 0149-645X. - 9781467361767 - 9781467321419
  • Konferensbidrag (refereegranskat)abstract
    • The distortion from amplitude and phase imbalance in outphasing amplifiers is discussed. The relation between dynamic range (DR) and suppression of distortion is shown to approximately follow a simple linear relationship depending on the DR. Approximate relations between adjacent channel leakage power ratio (ACLR) for different kinds of commonly used communication signals and two-tone intermodulation distortion are given. Relations between loss in output power and reduction of DR as functions of duty cycle in switching-based outphasing amplifiers are also given. An approximate method to evaluate the possible performance of digital pre-distortion (DPD) is also given by considering a DPD capable of correcting all distortions except amplitude imbalance. The predicted performance is compared to the performance obtained using a DPD-model found in the literature. The results show that the method is in good agreement, demonstrating that the proposed method can be used for design and evaluation of predistorted outphasing amplifiers. 
  •  
39.
  • Gavell, Marcus, 1981, et al. (författare)
  • A linear 70-95 GHz differential IQ modulator for E-band wireless communication
  • 2010
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest ; 2010 IEEE MTT-S International Microwave Symposium, MTT 2010; Anaheim, CA; 23 May 2010 through 28 May 2010. - 0149-645X. - 9781424477326 ; , s. 788-791
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)
  •  
40.
  • Gevorgian, Spartak, 1948, et al. (författare)
  • Tunable FBARs: Intrinsic vs. extrinsic tunability
  • 2012
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
  • Konferensbidrag (refereegranskat)abstract
    • The methods used to make the Film Bulk Acoustic Resonators (FBAR) tunable is reviewed. Intrinsically tunable FBARs make use ferroelectrics in ferroelectric and paraelectric (non-polar) phases have tunabilities up to 5% and more. Extrinsically tunable resonators are based on traditional piezoelectric FBARs and make use of external varactors and inductors. The low tunability (
  •  
41.
  • Gunnarsson, Sten, 1976, et al. (författare)
  • pHEMT and mHEMT Ultra Wideband Millimeterwave Balanced Resistive Mixers
  • 2004
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2, s. 1141-1144
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • Two ultra wideband millimeterwave single balanced resistive mixers utilizing a Marchand balun for the LO-hybrid are simulated, fabricated and characterized for 30-60 GHz in both up and down conversion. Two different versions of the mixer were manufactured in a commercial pHEMT-MMIC and a mHEMT-MMIC process respectively. A measured down conversion loss of approximately 6 to 12 dB over the whole band is obtained for both versions of the mixer with external IF power combining. In spite of the balanced design, the required LO power is quite low, 2 dBm is sufficient for low conversion loss. The LO-RF isolation is excellent, often more than 30 dB for both type of mixers. Low noise figure and high IIP3 figures are obtained. It is also shown that by applying selective drain bias, up to 5 dB improvement of IIP3 can be obtained for the mHEMT mixer with small LO powers.
  •  
42.
  •  
43.
  • Gustafsson, David, 1983, et al. (författare)
  • A novel wideband and reconfigurable high average efficiency power amplifier
  • 2012
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
  • Konferensbidrag (refereegranskat)abstract
    • This work presents theory and measurements of a new power amplifier based on the Doherty topology. It is theoretically shown that, by using a new set of design parameters with a Doherty power amplifier topology, the proposed amplifier can provide high efficiency, both at full output power and at power back-off, over a much improved bandwidth compared to the conventional Doherty power amplifier configuration. It is also shown that the proposed amplifier allows for simple reconfiguration of the efficiency in power back-off. A demonstrator circuit using individually controlled main and peak amplifier input signals is designed to validate the theoretical findings. Measurements show state-of-the art efficiency bandwidth at both full output power and at power back-off, as well as reconfigurable efficiency, thus validating the theory and demonstrating the potential of the proposed PA for use in future wireless transmitter applications.
  •  
44.
  • Gustafsson, Sebastian, 1990, et al. (författare)
  • Vector-corrected Nonlinear Multi-port IQ-mixer Characterization using Modulated Signals
  • 2017
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; , s. 1433-1436
  • Konferensbidrag (refereegranskat)abstract
    • In this paper, large-signal operation of IQ-mixers isstudied using a vector-corrected four-port measurement setup with modulated signals as stimuli. The measurement setup presents unique characterization possibilities since it has two ports at low/baseband frequencies and two ports at RF, making it ideal for characterization of frequency-translating devices such as mixers. A commercial upconverting IQ-mixer is studied, with the I and Q input signals residing at incommensurate frequencygrids, enabling separation of the nonlinear distortion generated in the I and Q branches. Frequency-domain and time-domain measurements reveal imbalances between the I and Q branches in terms of conversion gain and nonlinear distortion. It is also shown for the same mixer that operating the I and Q branches concurrently has limited influence on both conversion gain and nonlinear distortion, compared to non-concurrent operation.
  •  
45.
  • Gustavsson, Ulf, 1975, et al. (författare)
  • A general method for passband quantization noise suppression in pulsed transmitter architectures.
  • 2009
  • Ingår i: Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International.. - 0149-645X. ; , s. 1529 - 1532
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper we describe a novel method for selective bandpass cancellation of the quantization-noise that occurs in pulsed transmitter architectures, where the signal is partially or completely quantized. A carrier bursting transmitter architecture, where the amplitude part is quantized and then recombined with a phase-modulated RF carrier, is used as a general example to demonstrate the principles of the method proposed. Measurements on a high efficiency 10 W LDMOS PA working at 1 GHz are used to verify the theoretical results.
  •  
46.
  • Habibpour, Omid, 1979, et al. (författare)
  • Generation of multi-Gigabit/s OFDM signals at W-band with a graphene FET MMIC mixer
  • 2017
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 1185-1187
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents multi-Gigabit/s Orthogonal Frequency Division Multiplexing (OFDM) signal generation by using a graphene field effect transistor based resistive mixer at w-band. The OFDM signals consist of 64 subcarriers each carrying a quadrature-phase-shift-keying (QPSK) symbols. The results show that a bit error rate of 10 -4 is achievable for 8 Gbps data rate.
  •  
47.
  • Hallberg, William, 1988, et al. (författare)
  • Current scaled Doherty amplifier for high efficiency and high linearity
  • 2016
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509006984 ; 2016-August, s. Art. no. 7540185-
  • Konferensbidrag (refereegranskat)abstract
    • In this paper, a novel Doherty power amplifier (PA) design method that enables high efficiency and high linearity simultaneously is developed. The output combiner network parameters are solved to satisfy boundary conditions required for high efficiency, and linear gain and phase responses. The proposed method is experimentally verified by a 2.14 GHz prototype PA, fabricated using two identical 15 W GaN HEMT devices. For a 8.6 dB peak to average power ratio 10 MHz LTE signal, the PA presents an average power added efficiency of 40%, and an adjacent power leakage ratio of -41 dBc without any linearization.
  •  
48.
  • Hanning, Johanna, 1981, et al. (författare)
  • A Broadband THz Waveguide-to-suspended Stripline Loop-probe Transition
  • 2017
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 1091-1094
  • Konferensbidrag (refereegranskat)abstract
    • We present a novel waveguide-to-suspended stripline loop-probe transition operating over the entire WR-1.0 waveguide band. The loop probe is designed for broadband response with simulated RL > 15 dB, and has an integrated DC return path, which can also be extended for biasing. The measured insertion loss for a back-to-back configuration is 1 – 2 dB in almost the entire frequency range of 750 – 1100 GHz.
  •  
49.
  • Hassona, Ahmed Adel, 1988, et al. (författare)
  • A Low-loss D-band Chip-to-Waveguide Transition Using Unilateral Fin-line Structure
  • 2018
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2018-June, s. 390-393
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents a D-band interconnect realized using unilateral finline structure. The interconnect consists of a microstrip line implemented on a 75μm-thick SiC substrate. The line then couples to a unilateral finline taper that is mounted in the E-plane of a standard WR-6.5 D-band waveguide. The interconnect achieves low insertion loss and covers very wide frequency range. The measured minimum insertion loss is 0.67 dB and the maximum is 2 dB per transition across the entire D-band covering the frequency range 110-170 GHz. The transition does not require any galvanic contacts nor any special processing and can be implemented in any of the commercially available semiconductor technologies. This solution provides low-loss wideband packaging technique that enables millimeter-wave systems assembly using a high-performance simple approach.
  •  
50.
  • Hassona, Ahmed Adel, 1988, et al. (författare)
  • A non-galvanic D-band MMIC-to-waveguide transition using eWLB packaging technology
  • 2017
  • Ingår i: 2017 IEEE MTT-S International Microwave Symposium (IMS). - : Institute of Electrical and Electronics Engineers (IEEE). - 0149-645X. - 9781509063604 ; , s. 510-512
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through a slot antenna directly radiating to a standard air filled waveguide. The interconnect achieves low insertion loss and relatively wide bandwidth. The measured average insertion loss is 3 dB across a bandwidth of 22% covering the frequency range 110138 GHz. The measured average return loss is -10 dB across the same frequency range. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz. This solution enables mm-wave system on chip (SoC) to be manufactured and assembled in high volumes cost effectively. To the authors' knowledge, this is first attempt to fabricate a packaging solution beyond 100 GHz using eWLB technology.
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