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| 2. |
- Gejke, Cecilia, 1973, et al.
(författare)
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Lithium insertion in Sn-P and Sn-B-P oxide glasses
- 2000
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Ingår i: Lithium Batteries. Proceedings of the International Symposium (Electrochemical Society Proceedings). - 0161-6374. ; 99-25, s. 144-149.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- The behaviour of electrodes based on Sn2P2O7 and Sn2BPO6 glasses during cycling were characterized with diffuse IR reflectance. By removing the electrodes from the half-cells at different stages of the electrochemical cycling it was possible to follow the development of the glass structures during lithium insertion and extraction. It was found that the local network structure around the phosphate groups in the glass experience structural changes by the lithium insertion. These changes are not fully recovered by lithium extraction during the first cycle and are likely related to the initial irreversible loss of capacitance of the electrodes.
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| 3. |
- Wosinski, Lech, et al.
(författare)
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Material consideration for integrated optics in silica-on-silicon technology
- 2003
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Ingår i: Proceedings volumes / Electrochemical society. - 0161-6374. ; 1, s. 130-144
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Tidskriftsartikel (refereegranskat)abstract
- In this paper we present guidelines for optimization of process parameters for low temperature deposition of silica films for optical applications. The fabrication of optical integrated circuits based on silica deposition on silicon substrates with plasma enhanced CVD introduces different challenges in this technology, with respect to its traditional application in the field of microelectronics. The thick layers required, make deposition rate a very important parameter of merit. High accuracy of this thickness and refractive index as well as their uniformity over large area of the wafer are also very important for the functionality of the fabricated devices. Finally low processing temperature is essential as it allows monolithic integration with temperature sensitive semiconductor components. In this study a commercial parallel plate reactor has been used and the deposition parameters have been analysed to determine the process window, which allows fulfilling all these demands, so as to make a subsequent high temperature consolidation step not necessary.
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