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- Bryllert, Tomas, et al.
(författare)
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Vertical high mobility wrap-gated InAs nanowire transistor
- 2005
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Ingår i: 63rd Device Research Conference Digest, 2005. DRC '05. - 0780390407 ; 1
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Konferensbidrag (refereegranskat)abstract
- We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm2/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of Vg = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude
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